ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 * 6 amps continuous current * Up to 10 amps peak current * Very low saturation voltages APPLICATIONS * Motor driving * Line switching * High side switches * Subscriber line interface cards (SLIC) ORDERING INFORMATION DEVICE ZXTN2011GTA ZXTN2011GTC REEL SIZE 7" 13" PINOUT TAPE WIDTH QUANTITY PER REEL 12mm 1,000 units embossed 4,000 units DEVICE MARKING ZXTN 2011 TOP VIEW ISSUE 2 - MAY 2006 1 SEMICONDUCTORS ZXTN2011G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO 200 V Collector-emitter voltage BV CEO 100 V Emitter-base voltage BV EBO 7 V A Continuous collector current (a) IC 6 Peak pulse current I CM 10 A Power dissipation at T A =25C (a) PD 3.0 W Linear derating factor Power dissipation at T A =25C (b) Linear derating factor 24 mW/C PD 1.6 W 12.8 mW/C Operating and storage temperature range T j , T stg -55 to +150 C THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient (a) R JA VALUE UNIT 42 C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 2 - MAY 2006 SEMICONDUCTORS 2 ZXTN2011G CHARACTERISTICS ISSUE 2 - MAY 2006 3 SEMICONDUCTORS ZXTN2011G ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Collector-base breakdown voltage BV CBO 200 235 V I C =100A Collector-emitter breakdown voltage BV CER 200 235 V I C =1A, RB1k Collector-emitter breakdown voltage BV CEO 100 115 V I C =10mA* Emitter-base breakdown voltage BV EBO 7 8.1 V I E =100A Collector cut-off current I CBO 50 nA V CB =150V 0.5 A VCB=150V,Tamb=100C Collector cut-off current I CER 100 nA V CB =150V R 1k 0.5 A VCB=150V,Tamb=100C V EB =6V Emitter cut-off current I EBO Collector-emitter saturation voltage V CE(SAT) Base-emitter saturation voltage V BE(SAT) Base-emitter turn-on voltage V BE(ON) Static forward current transfer ratio H FE fT Output capacitance C OBO nA 35 mV I C =0.1A, I B =5mA* 50 65 mV IC=1A, IB=100mA* IC=2A, IB=100mA* 95 125 mV 180 220 mV IC=5A, IB=500mA* 1020 1120 mV I C =5A, I B =500mA* 920 1000 mV I C =5A, V CE =2V* I C =10mA, V CE =2V* 100 230 100 200 30 60 10 Transition frequency 10 21 IC=2A, VCE=2V* 300 IC=5A, VCE=2V* IC=10A, VCE=2V* 20 130 MHz I C =100mA, V CE =10V f=50MHz Switching times 26 pF t ON 41 ns t OFF 1010 V CB =10V, f=1MHz* I C =1A, V CC =10V, I B1 =I B2 =100mA * Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. ISSUE 2 - MAY 2006 SEMICONDUCTORS 4 ZXTN2011G TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2006 5 SEMICONDUCTORS ZXTN2011G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max A - 1.80 - 0.071 e Min 2.30 BSC Max Min 0.0905 BSC Max A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - (c) Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - MAY 2006 SEMICONDUCTORS 6