BFN27 PNP Silicon High-Voltage Transistors * Suitable for video output stages in TV sets 2 3 and switching power supplies 1 * High breakdown voltage * Low collector-emitter saturation voltage * Complementary types: BFN26 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking BFN27 FLs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 Collector current IC 200 Peak collector current, tp 10 ms ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS V mA TS 74 C -65 ... 150 Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-12-19 BFN27 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 300 Unit V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 300 - - V(BR)EBO 5 - - IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 100 A, IC = 0 Collector-base cutoff current A ICBO VCB = 250 V, IE = 0 - - 0.1 VCB = 250 V, IE = 0 , TA = 150 C - - 20 - - 100 Emitter-base cutoff current IEBO nA VEB = 5 V, IC = 0 DC current gain1) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 30 - - VCEsat - - 0.5 VBEsat - - 0.9 fT - 100 - MHz Ccb - 2.5 - pF Collector-emitter saturation voltage1) V IC = 20 mA, IB = 2 mA Base emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency IC = 20 MHz, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz 1Pulse test: t < 300s; D < 2% 2 2011-12-19 BFN27 DC current gain hFE = (IC) VCE = 10 V 10 3 Operating range IC = (VCEO) TA = 25C, D = 0 BFN 25/27 10 3 EHP00634 mA 5 10 s h FE 10 2 IC 10 2 100 s 5 10 1 1 ms DC 10 1 10 0 5 10 0 -1 10 5 10 0 5 10 1 2 5 10 C mA 10 Collector current IC = (VBE ) BFN 25/27 10 1 10 2 V 10 3 VCE Collector cutoff current ICBO = (TA) VCBO = 200 V VCE = 10V 10 3 10 -1 0 10 3 EHP00632 mA CBO C 10 4 nA BFN 25/27 EHP00633 max 10 3 5 10 2 5 10 2 5 10 1 5 typ 10 1 5 10 0 10 0 5 5 10 -1 0 0.5 V 1.0 10 -1 1.5 V BE 0 50 100 C 150 TA 3 2011-12-19 BFN27 Transition frequency fT = (IC) VCE = 10 V 10 3 Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) BFN 25/27 EHP00629 90 pF MHz CCB(CEB ) fT 70 60 50 10 2 40 CEB 5 30 20 10 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 0 0 10 3 4 8 12 16 Permissible Pulse Load RthJS = (tp) 10 3 400 K/W mW 10 2 RthJS Ptot 300 250 10 1 200 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 150 10 0 100 50 0 0 22 VCB(VEB C Total power dissipation P tot = (TS) V 15 30 45 60 75 90 105 120 C TS 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-12-19 BFN27 Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 BFN 25/27 Ptot max 5 Ptot DC EHP00630 tp D= T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-12-19 Package SOT23 BFN27 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2011-12-19 BFN27 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 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