Data Sheet Switching Diode EMN11 Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 1.0 0.5 0.5 1.60.1 0.220.05 0.3 0.25 0.15 0.15 0.25 Construction Silicon epitaxial planar (1) (2) 0.5 0.5 1.55 (4) 0.45 (5) 1.20.1 (6) 1.60.1 Features 1) Ultra small mold type. (EMD6) 2) High reliability. 0.130.05 00.1 0.4 EMD6 (3) 1.00.1 Structure 0.50.05 ROHM : EMD6 JEITA : SC-75A Size dot (year week factory) Taping specifications (Unit : mm) 1.50.1 0 2.00.05 0.30.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward voltage (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) (Single) Power dissipation Pd Junction temperature Tj Storage temperature Tstg 8.00.2 1.650.01 0.80.1 4.00.1 00.1 1.650.1 1PIN 1.650.1 5.50.2 3.50.05 1.750.1 4.00.1 0.650.1 Limits Unit V V mA mA A mW/Total C C 80 80 300 100 4 150 150 55 to 150 * *Pd=120mW when only 1 circuit is operating. CONDITION=Each terminal mounted on a recommended land pattern.(0.35x0.9mm) Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Min. Typ. Max. Unit Conditions - - 1.2 V IF=100mA Reverse current IR - - 0.1 A VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B Data Sheet EMN11 Ta=150 10000 Ta=75 Ta=25 Ta=150 Ta=-25 1 1000 Ta=75 100 Ta=25 10 Ta=-25 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 80 90 REVERSE CURRENT:IR(nA) 940 930 920 910 80 70 60 50 40 AVE:9.655nA 30 20 1.2 1.1 1 VF DISPERSION MAP 0.8 0.7 IR DISPERSION MAP Ct DISPERSION MAP 10 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 10 5 AVE:3.50A 5 Ta=25 VR=6V IF=5mA RL=50 n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 5 4 3 2 1 0 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 100 9 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA IF=100MA 10 1ms time 300us 1 0.001 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 AVE:1.040pF 0.9 0.5 0 15 1.3 0.6 10 AVE:921.7m 900 20 Ta=25 VR=6V f=1MHz n=10pcs 1.4 Ta=25 VR=80V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 IF=100mA n=30pcs 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1.5 100 950 FORWARD VOLTAGE:VF(mV) 1 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=125 f=1MHz Ta=125 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 8 7 6 5 4 3 2 1 0 0.01 0.1 1 10 100 TIME:t(ms) Rth-t CHARACTERISTICS 2/2 1000 AVE:2.54kV AVE:0.97kV C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A