Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
EMN11
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Ultra small mold type. (EMD6)
2) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW/Total *
Tj °C
Tstg °C
*Pd=120mW when only 1 circuit is operating. CONDITION=Each terminal mounted on a recommended land pattern.(0.35x0.9mm)
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 1.2 V IF=100mA
IR- - 0.1 μAVR=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr - - 4 ns VR=6V , IF=5mA , RL=50Ω
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Storage temperature 55 to 150
Parameter Conditions
Power dissipation 150
Junction temperature 150
Average rectified forward current (Single) 100
Surge current (t=1us) (Single) 4
Reverse voltage (DC) 80
Forward voltage (Single) 300
Parameter Limits
Reverse voltage (repetitive peak) 80
EMD6
0.4
0.45
0.25 0.15
1.0
0.5
0.5
0.25
0.15
0.3
1.55
1.65±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.8±0.1
5.5±0.2
1.65±0.1
0.65±0.1
0.3±0.1
0～0.1
1PIN
1.65±0.01
ROHM : EMD6
JEITA : SC-75A Size
dot (year week factory)
0.13±0.05
0.5±0.05
0～0.1
(1)
(5)
(3)
(6)
(2)
(4)
0.5
0.5
1.0±0.1
0.22±0.05
1.6±0.1
1.2±0.1
1.6±0.1
1/2 2011.06 - Rev.B
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMN11
0
1
2
3
4
5
6
7
8
9
10
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
AVE:1.040pF
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(ms)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=150℃
0.01
0.1
1
10
100
1000
10000
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=150℃
900
910
920
930
940
950
AVE:921.7m
Ta=25℃
IF=100mA
n=30pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25℃
VR=80V
n=10pcs
AVE:9.655nA
Ta=25℃
VR=6V
f=1MHz
n=10pcs
0
5
10
15
20
AVE:3.50A
8.3ms
Ifsm 1cyc
AVE:1.93ns
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
0
1
2
3
4
5
110100
8.3ms
Ifsm
1cyc
8.3ms
1
10
100
0.1 1 10 100
t
Ifsm
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
1ms
IM=10mA IF=100MA
300us
time
Mounted on epoxy board
Rth(j-c)
Rth(j-a)
0
1
2
3
4
5
6
7
8
9
10
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
AVE:0.97kV
AVE:2.54kV
0.1
1
10
0 5 10 15 20
f=1MHz
2/2 2011.06 - Rev.B
R1120A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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