DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAT18 Band-switching diode Product specification Supersedes data of April 1991 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BAT18 FEATURES DESCRIPTION * Continuous reverse voltage: max. 35 V Planar high performance band-switching diode in a small rectangular plastic SOT23 SMD package. * Continuous forward current: max. 100 mA PINNING PIN * Low diode capacitance: max. 1.0 pF * Low diode forward resistance: max. 0.7 . handbook, halfpage 2 DESCRIPTION 1 anode 2 not connected 3 cathode 1 2 n.c. APPLICATION 1 * Band switching. 3 3 MAM185 Marking code: A2. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage - 35 IF continuous forward current - 100 mA Tstg storage temperature -55 +125 C Tj junction temperature - 125 C TYP. MAX. - 1.2 V ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage IF = 100 mA; see Fig.2 IR reverse current see Fig.3 UNIT V VR = 20V - 100 nA VR = 20 V; Tj = 60 C - 1 A Cd diode capacitance f = 1 MHz; VR = 20 V; see Fig.4 0.8 1.0 pF rD diode forward resistance IF = 5 mA; f = 200 MHz; see Fig.5 0.5 0.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on a FR4 printed-circuit board. 1996 Mar 13 2 VALUE UNIT 330 K/W 500 K/W Philips Semiconductors Product specification Band-switching diode BAT18 GRAPHICAL DATA MBG312 100 (1) (2) MBG311 5 10halfpage handbook, handbook, halfpage IR (nA) 10 4 (3) IF (mA) 10 3 10 2 50 10 1 10 -1 0 0 0.5 1 V F (V) 1.5 (1) Tj = 60 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 50 0 100 Tj ( o C) 150 VR = 20 V. Solid line: maximum values. Dotted line: typical values. Forward current as a function of forward voltage. Fig.3 MBG313 1.5 Reverse current as a function of junction temperature. MBG314 2 handbook, halfpage handbook, halfpage Cd (pF) rD () 1 1 0.5 0 -1 10 1 10 VR (V) 10 0 2 1 10 f = 1 MHz; Tj = 25 C. f = 200 MHz; Tj = 25 C. Fig.4 Fig.5 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 13 3 IF (mA) 10 2 Diode forward resistance as a function of forward current; typical values. Philips Semiconductors Product specification Band-switching diode BAT18 PACKAGE OUTLINE 3.0 2.8 book, full pagewidth 0.55 0.45 0.150 0.090 B 1.9 0.95 2 1 0.1 max 10 o max 0.2 M A A 1.4 1.2 2.5 max 10 o max 3 1.1 max 30 o max 0.48 0.38 0.1 M A B MBC846 TOP VIEW Dimensions in mm. Fig.6 SOT23. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 13 4