DATA SH EET
Product specification
Supersedes data of April 1991 1996 Mar 13
DISCRETE SEMICONDUCTORS
BAT18
Band-switching diode
b
ook, halfpage
M3D088
1996 Mar 13 2
Philips Semiconductors Product specification
Band-switching diode BAT18
FEATURES
•Continuous reverse voltage:
max. 35 V
•Continuous forward current:
max. 100 mA
•Low diode capacitance:
max. 1.0 pF
•Low diode forward resistance:
max. 0.7 Ω.
APPLICATION
•Band switching.
DESCRIPTION
Planar high performance
band-switching diode in a small
rectangular plastic SOT23 SMD
package.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: A2.
handbook, halfpage
21
3
MAM185
2
n.c. 1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL PARAMETER MIN. MAX. UNIT
VRcontinuous reverse voltage −35 V
IFcontinuous forward current −100 mA
Tstg storage temperature −55 +125 °C
Tjjunction temperature −125 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage IF= 100 mA; see Fig.2 −1.2 V
IRreverse current see Fig.3
VR= 20V −100 nA
VR= 20 V; Tj=60°C−1µA
C
ddiode capacitance f = 1 MHz; VR= 20 V; see Fig.4 0.8 1.0 pF
rDdiode forward resistance IF= 5 mA; f = 200 MHz; see Fig.5 0.5 0.7 Ω
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 330 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
1996 Mar 13 3
Philips Semiconductors Product specification
Band-switching diode BAT18
GRAPHICAL DATA
(1) Tj=60°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.2 Forward current as a function of
forward voltage.
handbook, halfpage
0 1.5
100
0
50
MBG312
0.5 1
IF
(mA)
V (V)
F
(1) (2) (3)
VR=20V.
Solid line: maximum values.
Dotted line: typical values.
Fig.3 Reverse current as a function of
junction temperature.
handbook, halfpage
105
104
103
102
10−1
10
1
150
0
MBG311
50 100 Tj ( C)
o
IR
(nA)
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
1.5
010−1
MBG313
11010
2
0.5
1
Cd
(pF)
VR (V)
Fig.5 Diode forward resistance as a function of
forward current; typical values.
f = 200 MHz; Tj=25°C.
handbook, halfpage
2
0102
MBG314
101
1
rD
(Ω)
IF (mA)
1996 Mar 13 4
Philips Semiconductors Product specification
Band-switching diode BAT18
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.6 SOT23.
Dimensions in mm.
bo
ok, full pagewidth
MBC846
10
max
o
10
max
o
30
max
o
1.1
max
0.55
0.45
0.150
0.090
0.1
max
21
3
M0.1 AB
0.48
0.38
TOP VIEW
1.4
1.2 2.5
max
3.0
2.8
M
0.2 A
A
B
0.95
1.9