1996 Mar 13 2
Philips Semiconductors Product specification
Band-switching diode BAT18
FEATURES
•Continuous reverse voltage:
max. 35 V
•Continuous forward current:
max. 100 mA
•Low diode capacitance:
max. 1.0 pF
•Low diode forward resistance:
max. 0.7 Ω.
APPLICATION
•Band switching.
DESCRIPTION
Planar high performance
band-switching diode in a small
rectangular plastic SOT23 SMD
package.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: A2.
handbook, halfpage
21
3
MAM185
2
n.c. 1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL PARAMETER MIN. MAX. UNIT
VRcontinuous reverse voltage −35 V
IFcontinuous forward current −100 mA
Tstg storage temperature −55 +125 °C
Tjjunction temperature −125 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage IF= 100 mA; see Fig.2 −1.2 V
IRreverse current see Fig.3
VR= 20V −100 nA
VR= 20 V; Tj=60°C−1µA
C
ddiode capacitance f = 1 MHz; VR= 20 V; see Fig.4 0.8 1.0 pF
rDdiode forward resistance IF= 5 mA; f = 200 MHz; see Fig.5 0.5 0.7 Ω
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 330 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W