he GENERAL DESCRIPTIONS a | FPT 100 FPT 100A FPT 100B NPN SILICON PHOTOTRANSISTOR MECHANICAL OUTLINE . we TO- The FPT 100, FPT 100 A & FPT 100 B are thfee terminal NPN silicon planar 106 phototransistors. It features high illumination sensitivity, fast response time and low dark current. Besides, the availability of base lead also allows the circuit designer to t 0 ato mas optimise their design. It is intended for unched cards and paper tape reader, intrusion alarm sensor, position detector and optical tachometer. 9.200 max = ABSOLUTE MAXIMUM RATING - Continuous Power Dissipation @ T,=25 C, pd 100 mW Continuous Collector Current, tc max 25 mA Collector - Emitter Sustaining Voltage, Veeg 30 V i Collector - Base Voltage, Vogo 50 V | Aub ouensions wy amenas Operating Junction Temperature Range, Tj 55C to + 85C . Storage Temperature Range, Tstg 55C to + 100C _-t wel Las lead 9.02 tia, onan leads gold plated ELECTRICAL CHARACTERISTICS : (@ Ta=25 C unless otherwise specified) i PARAMETER Collectoar- Base Breakdown Voltage Collector Emitter Sustaining Voltage Emitter-Collector Breakdown Voltage Collector Dark Current Collector Dark Current Collector Dark Current Responsivity (Tungsten) Responsivity (Gs As) Photo Current (Tungsten) FPT 100 FPT 100 A FPT 100 B Photo Current (Ga As} Light Current Rise Time Light Current Fall Time Collector-Emitter Saturation Voltage SYMBOL|MIN TYP MAX} UNIT TEST CONDITION BV CBO 50 120 Vv Ic= 100 pA VcEO(sus) | 30 50 Vv Ic= 1 mA BVEcO 7 Vv lec = 100 pA | cRo 0.25 nA V ce= 10V | cBo 0.025 25 | wA Vcp= 10V TA=65C | ceo 2 0.5} nA V ce=5V Reso 0.6 1.6 100 |pA/mW/em2) V cB= 10V (notes 1) Reso 1.8 4.8 pA/mwicm2| VcB= 10V {notes 2) I cet) 0.2 1.4 mA Vice =5V H=5mW/cm2 1 3 mA (notes 1) 1.3 2.6 mA lcE(L) 0.6 4.2 mA VcE= 5V H=5mW/cem2{(notes 2) tr 2.8 psec {note 3) ty 2.8 pisec {note 3) V CE (sat) 0.16 0.3 Vv Ic=800uA H=20mW/cm2 Note 1 Measured at noted irradiance as emitted from a tungsten filament lamp at a colour temperature of 2854 K Note 2 MEASURED at noted irradiance as emitted from a GaAs source at 0.9 u. Note 3 Test Conditions are : Inp=4 mA Vee=5V, Ry=100 ohm, GaAs source. 29