Features * Medium Power Linear Switching Applications * Complement to TIP42 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP41A TIP41A TO-220 3L (Single Gauge) Bulk TIP41B TIP41B TO-220 3L (Single Gauge) Bulk TIP41C TIP41C TO-220 3L (Single Gauge) Bulk TIP41CTU TIP41C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol Parameter Value TIP41A VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage Unit 60 TIP41B 80 TIP41C 100 TIP41A 60 TIP41B 80 TIP41C 100 V V 5 V IC Collector Current (DC) 6 A ICP Collector Current (Pulse) 10 A IB Base Current 2 A TJ Junction Temperature TSTG Storage Temperature Range (c) 2000 Semiconductor Components Industries, LLC. November-2017,Rev. 2 150 C -65 to 150 C Publication Order Number: TIP41C/D TIP41A / TIP41B / TIP41C -- NPN Epitaxial Silicon Transistor TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor Values are at TC = 25C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TC = 25C) 65 Collector Dissipation (TA = 25C) 2 Unit W Electrical Characteristics Values are at TC = 25C unless otherwise noted. Symbol Parameter Conditions TIP41A VCEO(sus) ICEO ICES IEBO hFE IC = 30 mA, IB = 0 Collector Cut-Off Current Max. 80 V 100 TIP41A VCE = 30 V, IB = 0 0.7 TIP41B / TIP41C VCE = 60 V, IB = 0 0.7 TIP41A VCE = 60 V, VEB = 0 400 TIP41B VCE = 80 V, VEB = 0 400 TIP41C VCE = 100 V, VEB = 0 400 Emitter Cut-Off Current VEB = 5 V, IC = 0 DC Current Gain(1) (1) Unit 60 Collector-Emitter Sustaining TIP41B Voltage(1) TIP41C Collector Cut-Off Current Min. 1 VCE = 4 V, IC = 0.3 A 30 VCE = 4 V, IC = 3 A 15 mA A mA 75 VCE(sat) Collector-Emitter Saturation Voltage IC = 6 A, IB = 600 mA 1.5 V VBE(on) Base-Emitter On Voltage(1) VCE = 4 V, IC = 6 A 2.0 V Current Gain Bandwidth Product VCE = 10 V, IC = 500 mA, f = 1 MHz fT Note: 1. Pulse test: pw 300 s, duty cycle 2%. www.onsemi.com 2 3.0 MHz TIP41A / TIP41B / TIP41C -- NPN Epitaxial Silicon Transistor Thermal Characteristics hFE, DC CURRENT GAIN VCE = 4V 100 10 1 1 10 100 1000 VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 1000 10000 IC/IB = 10 1000 VBE(sat) 100 VCE(sat) 10 1 10000 10 IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain 1000 10000 IC[mA], COLLECTOR CURRENT Figure 2. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 100 IC(MAX) (PULSE) 10 ms 0.5 s 5m s 1m IC(MAX) (DC) 1 TIP41 VCEO MAX. TIP41A VCEO MAX. TIP41B VCEO MAX. TIP41C VCEO MAX. PC[W], POWER DISSIPATION 100 IC[A], COLLECTOR CURRENT 100 10 60 40 20 0 0.1 1 80 0 100 25 50 75 100 125 o 150 TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area Figure 4. Power Derating www.onsemi.com 3 175 TIP41A / TIP41B / TIP41C -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics TIP41A / TIP41B / TIP41C -- NPN Epitaxial Silicon Transistor Physical Dimensions Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB www.onsemi.com 4 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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