TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
Publication Order Number:
TIP41C/D
© 2000 Semiconductor Components Industries, LLC.
November-2017,Rev. 2
TIP41A / TIP41B / TIP41C
NPN Epitaxial Silicon Transistor
Features
Medium Power Linear Switching Applications
Complement to TIP42 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating co nd itions and stressi ng the part s to these levels is n ot re co mme nded. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP41A TIP41A TO-220 3L (Single Gauge) Bulk
TIP41B TIP41B TO-220 3L (Single Gauge) Bulk
TIP41C TIP41C TO-220 3L (Single Gauge) Bulk
TIP41CTU TIP41C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP41A 60 VTIP41B 80
TIP41C 100
VCEO Collector-Emitter Voltage TIP41A 60 VTIP41B 80
TIP41C 100
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 6 A
ICP Collector Current (Pulse) 10 A
IBBase Current 2 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
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Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TC = 25°C) 65 W
Collector Dissipation (TA = 25°C) 2
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1)
TIP41A IC = 30 mA, IB = 0 60 VTIP41B 80
TIP41C 100
ICEO Collector Cut-Off Current TIP41A VCE = 30 V, IB = 00.7
mA
TIP41B /
TIP41C VCE = 60 V, IB = 0 0.7
ICES Collector Cut-Off Current TIP41A VCE = 60 V, VEB = 0 400
μATIP41B VCE = 80 V, VEB = 0 400
TIP41C VCE = 100 V, VEB = 0 400
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 1 mA
hFE DC Current Gain(1) VCE = 4 V, IC = 0.3 A 30
VCE = 4 V, IC = 3 A 15 75
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 6 A, IB = 600 mA 1.5 V
VBE(on) Base-Emitter On Voltage(1) VCE = 4 V, IC = 6 A 2.0 V
fT Current Gain Bandwidth Product VCE = 10 V, IC = 500 mA,
f = 1 MHz 3.0 MHz
TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
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3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000 VCE = 4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100
0.1
1
10
100
TIP41C VCEO MAX.
TIP41B VCEO MA X.
TIP41A VCEO MAX.
TIP41 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
0.5ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTO R-E MITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP41A / TIP41B / TIP41C — NPN Epitaxial Silicon Transistor
www.onsemi.com
4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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