MEDIUM POWER THYRISTORS Stud Version
25RIA SERIES
1
25A
Bulletin I2402 rev. C 05/06
25RIA
10 to 120 140 to 160
IT(AV) 25 25 A
@ TC85 85 °C
IT(RMS) 40 40 A
ITSM @ 50Hz 420 398 A
@ 60Hz 440 415 A
I2t@
50Hz 867 795 A2s
@ 60Hz 790 725 A2s
VDRM/VRRM 100 to 1200 1400 to 1600 V
tqtypical 110 μs
TJ- 65 to 125 °C
Parameters Units
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Case Style
TO-208AA (TO-48)
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V VDRM/ VRRM
RoHS Compliant
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25RIA Series
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Bulletin I2402 rev. C 05/06
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ TJ = TJ max.
VVmA
10 100 150 20
20 200 300
40 400 500
60 600 700
25RIA 80 800 900 10
100 1000 1100
120 1200 1300
140 1400 1500
160 1600 1700
IT(AV) Max. average on-state current 25 25 A 180° sinusoidal conduction
@ Case temperature 85 85 °C
IT(RMS) Max. RMS on-state current 40 40 A
ITSM Max. peak, one-cycle 420 398 A t = 10ms No voltage
non-repetitive surge current 440 415 t = 8.3ms reapplied
350 335 t = 10ms 100% VRRM
370 350 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 867 795 A2s t = 10ms No voltage Initial TJ = TJ max.
790 725 t = 8.3ms reapplied
615 560 t = 10ms 100% VRRM
560 510 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 8670 7950 A2√s t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.
VT(TO)1 Low level value of threshold 0.99 0.99 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
VT(TO)2High level value of threshold 1.40 1.15 (I > π x IT(AV)),TJ = TJ max.
voltage
rt1 Low level value of on-state 10.1 11.73 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
rt2 High level value of on-state 5.7 10.05 (I > π x IT(AV)),TJ = TJ max.
slope resistance
VTM Max. on-state voltage 1.70 --- V Ipk= 79 A, TJ = 25°C
--- 1.80
IHMaximum holding current 130 mA TJ = 25°C. Anode supply 6V, resistive load,
ILLatching current 200
25RIA
10 to 120 140 to 160
Parameter Units Conditions
ELECTRICAL SPECIFICATIONS
Voltage Ratings
On-state Conduction
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs
(2) For voltage pulses with tp ≤ 5ms
25RIA Series
3
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Bulletin I2402 rev. C 05/06
dv/dt Max. critical rate of rise of 100 TJ = TJ max. linear to 100% rated VDRM
off-state voltage 300 (*) TJ = TJ max. linear to 67% rated VDRM
V/μs
Parameter 25RIA Units Conditions
Blocking
PGM Maximum peak gate power 8.0 TJ = TJ max.
PG(AV) Maximum average gate power 2.0
IGM Max. peak positive gate current 1.5 A TJ = TJ max.
-VGM Maximum peak negative 10 V TJ = TJ max.
gate voltage
IGT DC gate current required 90 TJ = - 65°C
to trigger 60 mA TJ = 25°C
35 TJ = 125°C
VGT DC gate voltage required 3.0 TJ = - 65°C
to trigger 2.0 V TJ = 25°C
1.0 V TJ = 125°C
IGD DC gate current not to trigger 2.0 mA TJ = TJ max., VDRM = rated value
VGD DC gate voltage not to trigger 0.2 V TJ = TJ max.
VDRM = rated value
W
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Parameter 25RIA Units Conditions
Triggering
di/dt Max. rate of rise of turned-on TJ = TJ max., VDM = rated VDRM
current VDRM ≤ 600V 20 0 A/μs Gate pulse = 20V, 15Ω, tp = 6μs, tr = 0.1μs max.
VDRM ≤ 800V 180 ITM = (2x rated di/dt) A
VDRM ≤ 1000V 160
VDRM ≤ 1600V 150
tgt Typical turn-on time 0.9 TJ = 25°C,
at = rated VDRM/VRRM, TJ = 125°C
trr Typical reverse recovery time 4 μsT
J = TJ max.,
ITM = IT(AV), tp > 200μs, di/dt = -10A/μs
tqTypical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200μs, VR = 100V,
di/dt = -10A/μs, dv/dt = 20V/μs linear to
67% VDRM, gate bias 0V-100W
Parameter 25RIA Units Conditions
Switching
(**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. 25RIA160S90.
(*) tq = 10μsup to 600V, tq = 30μs up to 1600V available on special request.
25RIA Series
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Bulletin I2402 rev. C 05/06
ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.17 0.13 K/W TJ = TJ max.
120° 0.21 0.22
90° 0.27 0.30
60° 0.40 0.42
30° 0.69 0.70
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
Ordering Information Table
1
25 RIA 160 M S90
Device Code
4
3
2
1- Current code
2- Essential part number
3- Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
4- None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 X 1
5- Critical dv/dt: None = 300V/μs (Standard value)
S90 = 1000V/μs (Special selection)
5
TJMax. operating temperature range - 65 to 125 °C
Tstg Max. storage temperature range - 65 to 125 °C
RthJC Max. thermal resistance, 0.75 K/W DC operation
junction to case
RthCS Max. thermal resistance, 0.35 K/W Mounting surface, smooth, flat and greased
case to heatsink
T Allowable mounting torque 3.4 +0-10% Nm Non-lubricated threads
30 lbf-in
23
+0-10% Nm Lubricated threads
20 lbf-in
Case style TO-208AA (TO-48) See Outline Table
Parameter 25RIA Units Conditions
Thermal and Mechanical Specification
wt Approximate weight 14 (0.49) g (oz)
25RIA Series
5
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Bulletin I2402 rev. C 05/06
Outline Table
Fig. 1 - Current Ratings Characteristic
80
90
100
110
120
130
0 5 10 15 20 25 30
30° 60°
90° 120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
25RIA Series (100 to 1200V)
R (DC) = 0.75 K/W
thJC
80
90
100
110
120
130
0 10203040
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
25RIA Series (100 to 1200V)
R (DC) = 0.75 K/W
thJC
Fig. 2 - Current Ratings Characteristic
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
25RIA Series
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Bulletin I2402 rev. C 05/06
Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - On-state Power Loss Characteristics
0 25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R =
1 K/W
- Delt
a R
thS
A
2 K
/W
3 K/W
4 K/W
5 K/W
7 K/W
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maxi mum Averag e On-st a te Powe r Loss (W)
Average On-state Current (A)
25RIA Series
(100 to 1200V)
T = 125°C
J
0 25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
2 K/W
7 K/W
5 K
/W
4 K
/W
3 K/W
R = 1 K/W - Delta R
thS
A
0
5
10
15
20
25
30
35
40
45
50
55
60
0 5 10 15 20 25 30 35 40
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
25RIA Series
(100 to 1200V)
T = 125°C
J
175
200
225
250
275
300
325
350
375
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
J
25RIA Series
(100 to 1200V)
150
175
200
225
250
275
300
325
350
375
400
425
450
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
25RIA Series
(100 to 1200V)
25RIA Series
7
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Bulletin I2402 rev. C 05/06
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 9 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
25RIA Series
(100 to 1200V)
T = 125°C
J
80
90
100
110
120
130
0 5 10 15 20 25 30
30° 60°
90°
120° 180°
Average On-state Current (A)
Ma xi mum Allo wable Case Temperat ur e (°C)
Conduction Angle
25RIA Series (1400 to 1600V)
R (DC) = 0.75 K/W
thJC
70
80
90
100
110
120
130
0 5 10 15 20 25 30 35 40 45
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
25RIA Series (1400 to 1600V)
R (DC) = 0.75 K/W
thJC
Fig. 10 - On-state Power Loss Characteristics
0 25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R = 0.5 K
/W
- Delta R
thS
A
1 K/W
1.5 K/W
2 K
/W
2.5 K
/W
3 K/W
3.5 K/W
4.5 K/W
6 K/W
7.5 K/W
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
25RIA Series
(1400 to 1600V)
T = 125°C
J
25RIA Series
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Bulletin I2402 rev. C 05/06
Fig. 12 - Maximum Non-Repetitive Surge Current Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 14 - Forward Voltage Drop Characteristics
Fig. 11 - On-state Power Loss Characteristics
0255075100125
Maximum Allowable Ambient Temperature (°C)
7.5 K/W
5
.5 K/W
4 K/W
3 K/W
2.5 K/W
2 K
/W
1.5
K/W
1 K/W
R = 0.5 K/W
- D
elta R
thS
A
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
25RIA Series
(1400 to 1600V)
T = 125°C
J
150
175
200
225
250
275
300
325
350
375
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
25RIA Series
(1400 to 1600V)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
150
175
200
225
250
275
300
325
350
375
400
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
25RIA Series
(1400 to 1600V)
1
10
100
1000
0123456
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
25RIA Series
(1400 to 1600V)
T = 125°C
J
25RIA Series
9
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Bulletin I2402 rev. C 05/06
Fig. 15 - Thermal Impedance ZthJC Characteristics
Fig. 16 - Gate Characteristics
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
25RIA Series
Transient Thermal Impedance Z (K/W)
Steady State Value
R = 0.75 K/W
(DC Operation)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
tr<=1 µs, tp >= 6 µs
rated di/dt : 10V, 20ohms
<=30% rated di/dt : 10V, 65ohms
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
tr <=0.5 µs, tp >= 6 µs
(3) (4)
25RIA Series Frequency Limited by PG(AV)
Tj = -65 °C
Tj = 25 °C
Tj = 125 °C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial and Consumer Level.
Qualification Standards can be found on IR's Web site.
