DS31219 Rev. 2 – 2
1 of 4
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© Diodes Incorporated
DZT5551
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DZT5401)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 3)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.112 grams (approximate)
2
3
4
1
NEW PRODUCT
SOT-223
3
1
2,4
BASE
COLLECTOR
EMITTER
4
3
2
1
CC
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC600 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TA = 25°C (Note 3) PD1 W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) RθJA 125 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V(BR)CBO 180 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 160 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0
Collector Cutoff Current ICBO ⎯ 50 nA
μA VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
Emitter Cutoff Current IEBO ⎯ 50 nA
VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 4)
DC Current Gain hFE 80
80
30
⎯
250
⎯ ⎯ IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.15
0.20 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ 1.0 V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 6.0 pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain hfe 50 200 ⎯ V
CE = 10V, IC = 1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product fT100 300 MHz
VCE = 10V, IC = 10mA, f = 100MHz
Noise Figure NF ⎯ 8.0 dB
VCE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
DS31219 Rev. 2 – 2
2 of 4
www.diodes.com DZT5551
© Diodes Incorporated
0
0.2
0.4
25 50 75 100 125 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fi g. 1 Max Po wer D i s sipati on vs . Ambient Tem per ature
A
0.6
0.8
1.0
0
0.00
0.05
0.10
0.15
0.20
0.25
012345678910
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
0.30
0
50
100
150
200
250
I , COLLECTOR CURRENT (A)
C
V , COLLECTOR-EMITTER
SATURATION VOL TAGE (V)
CE(SAT)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
0.1
0.2
0.3
0.0001 0.001 0.01 0.1 1
0
0.2
0.4
0.6
0.8
1
1.2
0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)
C
V , BASE- EM ITT E R TURN-ON VOLTAGE (V)
BE(ON)
Fig. 5 T y pical Base-Emitter Turn-On Voltage
vs. C ollec to r Current
0
0.2
0.4
0.6
0.8
1
1.2
0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A)
C
V , BASE-EMITTER SA TURATION VOL TAGE (V)
BE(SAT)
Fig. 6 Typical Base-Emitter Saturation V o lt age
vs. Collector Current
NEW PRODUCT
DS31219 Rev. 2 – 2
3 of 4
www.diodes.com DZT5551
© Diodes Incorporated
0.01 0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
0
10
20
30
40
50
60
C
obo
C
ibo
f = 1MHz
0204060801
I , COLLECTOR CURRENT (mA)
C
f , CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
T
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
V = 10V
f = 100MHz
CE
00
0
50
100
150
200
250
NEW PRODUCT
Ordering Information (Note 5)
Device Packaging Shipping
DZT5551-13 SOT-223 2500/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW
(Top View)
K4N = Product type marking code
= Manufacturer’s code marking
YWW = Date code marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e — — 4.60
e1 — — 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
DS31219 Rev. 2 – 2
4 of 4
www.diodes.com DZT5551
© Diodes Incorporated
NEW PRODUCT
Suggested Pad Layout
3.3
2.3
1.2
1.6
1.6
6.4
(Unit: mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to nhancements, improvements, corrections or other changes make modifications, e
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
