CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1992
January 1995
7-937
SEMICONDUCTOR
CD4051BMS, CD4052BMS
CD4053BMS
CMOS Analog
Multiplexers/Demultiplexers*
Description
CD4051BMS, CD4052BMS and CD4053BMS analog multi-
plexers/demultiplexers are digitally controlled analog
switches having low ON impedance and very low OFF leak-
age current. Control of analog signals up to 20V peak-to-
peak can be achieved by digital signal amplitudes of 4.5V to
20V (if VDD-VSS = 3V, a VDD-VEE of up to 13V can be con-
trolled; for VDD-VEE level differences above 13V, a VDD-
VSS of at least 4.5V is required). For example, if VDD =
+4.5V, VSS = 0, and VEE = -13.5V, analog signals from -
13.5V to +4.5V can be controlled by digital inputs of 0 to 5V.
These multiplexer circuits dissipate extremely low quiescent
power over the full VDD-VSS and VDD-VEE supply voltage
ranges, independent of the logic state of the control signals.
When a logic “1” is present at the inhibit input terminal all
channels are off.
The CD4051BMS is a single 8 channel multiplexer having
three binary control inputs, A, B, and C, and an inhibit input.
The three binary signals select 1 of 8 channels to be turned
on, and connect one of the 8 inputs to the output.
The CD4052BMS is a differential 4 channel multiplexer hav-
ing two binary control inputs, A and B, and an inhibit input.
The two binary input signals select 1 of 4 pairs of channels
to be turned on and connect the analog inputs to the out-
puts.
The CD4053BMS is a triple 2 channel multiplexer having
three separate digital control inputs, A, B, and C, and an
inhibit input. Each control input selects one of a pair of chan-
nels which are connected in a single pole double-throw con-
figuration.
The CD4051BMS, CD4052BMS and CD4053BMS are supplied
in these 16 lead outline packages:
Braze Seal DIP *H4X †H4T
Frit Seal DIP H1E
Ceramic Flatpack H6W
*CD4051B Only †CD4052B, CD4053 Only
Features
• Logic Level Conversion
• High-Voltage Types (20V Rating)
• CD4051BMS Signal 8-Channel
• CD4052BMS Differential 4-Channel
• CD4053BMS Triple 2-Channel
• Wide Range of Digital and Analog Signal Levels:
- Digital 3V to 20V
- Analog to 20Vp-p
• Low ON Resistance: 125Ω (typ) Over 15Vp-p Signal
Input Range for VDD - VEE = 15V
• High OFF Resistance: Channel Leakage of ±100pA
(typ) at VDD - VEE = 18V
• Logic Level Conversion:
- Digital Addressing Signals of 3V to 20V (VDD - VSS
= 3V to 20V)
- Switch Analog Signals to 20Vp-p (VDD - VEE = 20V);
See Introductory Text
• Matched Switch Characteristics: RON = 5Ω (typ) for
VDD - VEE = 15V
• Very Low Quiescent Power Dissipation Under All Digi-
tal Control Input and Supply Conditions: 0.2µW (typ)
at VDD - VSS = VDD - VEE = 10V
• Binary Address Decoding on Chip
• 5V, 10V and 15V Parametric Ratings
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
• Break-Before-Making Switching Eliminates Channel
Overlap
Applications
• Analog and Digital Multiplexing and Demultiplexing
• A/D and D/A Conversion
• Signal Gating
* When these devices are used as demultiplexers the “CHANNEL
IN/OUT” terminals are the outputs and the “COMMON OUT/IN” ter-
minals are the inputs.
File Number 3316
December 1992
7-938
CD4051BMS, CD4052BMS, CD4053BMS
Pinouts
CD4051BM
TOP VIEW CD4052BMS
TOP VIEW
CD4053BMS
TOP VIEW
Functional Diagrams
CD4051BMS
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
CHANNELS 6
COM OUT/IN
7
5
INH
VSS
VEE
VDD
1
0
3
A
B
C
2
IN/OUT 4
CHANNELS
IN/OUT
CHANNELS
IN/OUT
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Y CHANNELS 2
COMMON “Y” OUT/IN
3
1
INH
VSS
VEE
VDD
1
COMMON “X” OUT/IN
0
3
A
B
2
IN/OUT 0
Y CHANNELS
IN/OUT
X CHANNELS
IN/OUT
X CHANNELS
IN/OUT
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
bx
cy
OUT/IN CX or CY
IN/OUT CX
INH
VSS
VEE
VDD
OUT/IN ax or ay
ay
ax
A
B
C
OUT/IN bx or by
IN/OUT
by
IN/OUT
7
LOGIC
LEVEL
CONVERSION
BINARY
TO
1 OF 8
DECODER
WITH
INHIBIT
TG
TG
TG
TG
TG
TG
TG
TG
3
6
8
9
10
11
16
VEEVSS
*
*
*
*
A
B
C
INH
VDD
COMMON
OUT/IN
CHANNEL IN/OUT
124 5 12 131415
76543210
VDD
VSS
* ALL INPUTS PROTECTED BY
STANDARD CMOS PROTECTION
NETWORK
7-939
CD4051BMS, CD4052BMS, CD4053BMS
CD4052BMS
CD4053BMS
Functional Diagrams
(Continued)
7
LOGIC
LEVEL
CONVERSION
BINARY
TO
1 OF 4
DECODER
WITH
INHIBIT
TG
TG
TG
TG
TG
TG
TG
TG
3
6
8
9
10
16
VEEVSS
*
*
*
A
B
INH
VDD
COMMON Y
OUT/IN
X CHANNELS IN/OUT
11 121415
3210
Y CHANNELS IN/OUT
1425
0123
COMMON X
OUT/IN
13
7
LOGIC
LEVEL
CONVERSION
TG
TG
TG
TG
TG
TG
9
8
10
11
16
VEEVSS
*
*
*
A
B
C
VDD
IN/OUT
112132
by bx ay ax
OUT/IN
bx or by
35
cy cx
4
15
14
OUT/IN
ax or ay
OUT/IN
cx or cy
6
*
INH
BINARY TO 1 OF 2
DECODERS WITH
INHIBIT
VDD
VSS
* ALL INPUTS PROTECTED BY
STANDARD CMOS PROTECTION
NETWORK
7-940
Specifications CD4051BMS, CD4052BMS, CD4053BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . . θja θjc
Ceramic DIP and FRIT Package. . . . . 80oC/W 20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K). . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . .Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-10µA
2 +125oC - 1000 µA
VDD = 18V, VIN = VDD or GND 3 -55oC-10µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
2 +125oC -1000 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
2 +125oC - 1000 nA
VDD = 18V 3 -55oC - 100 nA
On-State Resistance
RL = 10K Returned to
VDD - VSS/2
RON VDD = 5V
VIS = VSS to VDD 1 +25oC - 1050 Ω
2 +125oC - 1300 Ω
3 -55oC - 800 Ω
VDD = 10V
VIS = VSS to VDD 1 +25oC - 400 Ω
2 +125oC - 550 Ω
3 -55oC - 310 Ω
VDD = 15V
VIS = VSS to VDD 1 +25oC - 240 Ω
2 +125oC - 320 Ω
3 -55oC - 220 Ω
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional
(Note 4) F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low
(Note 2) VIL VDD = 5V = VIS thru 1k,
VEE = VSS
RL = 1k to VSS, |IIS| < 2µA
OFF Channels
1, 2, 3 +25oC, +125oC, -55oC - 1.5 V
Input Voltage High
(Note 2) VIH 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V
Input Voltage Low
(Note 2) VIL VDD = 15V = VIS thru 1K
VEE = VSS
RL = 1K to VSS, |ISS|, <2µA
On All OFF Channels
1, 2, 3 +25oC, +125oC, -55oC- 4 V
Input Voltage High
(Note 2) VIH 1, 2, 3 +25oC, +125oC, -55oC11 - V
Off Channel Leakage
Any Channel OFF
Or
All Channels Off
(Common Out/In)
IOZL VIN = VDD or GND
VOUT = 0V VDD = 20V 1 +25oC -0.1 - µA
2 +125oC -1.0 - µA
VDD = 18V 3 -55oC -0.1 - µA
IOZH VIN = VDD or GND
VOUT = VDD VDD = 20V 1 +25oC - 0.1 µA
2 +125oC - 1.0 µA
VDD = 18V 3 -55oC - 0.1 µA
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
4. VDD = 2.8V/3.0V, RL = 200k to VDD
VDD = 20V/18V, RL = 10k to VDD
7-941
Specifications CD4051BMS, CD4052BMS, CD4053BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (Notes 1, 2) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Propagation Delay
(Note 1)
Address to Signal Out
Channels On or Off
TPHL
TPLH VDD = 5V, VIN = VDD or GND
VEE = VSS = 0V 9 +25oC - 720 ns
10, 11 +125oC, -55oC - 972 ns
Propagation Delay
(Note 1)
Inhibit to Signal Out
(Channel Turning On)
TPZH
TPZL VDD = 5V, VIN = VDD or GND
VEE = VSS = 0V 9 +25oC - 720 ns
10, 11 +125oC, -55oC - 972 ns
Propagation Delay
(Note 1)
Inhibit to Signal Out
(Channel Turning Off)
TPHZ
TPLZ VDD = 5V, VIN = VDD or GND
VEE = VSS = 0V 9 +25oC - 450 ns
10, 11 +125oC, -55oC - 608 ns
NOTES:
1. -55oC and +125oC limits guaranteed, 100% testing being implemented.
2. CL = 50pF, RL = 10KΩ, Input TR, TF < 20ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 5 µA
+125oC - 150 µA
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA
+125oC - 300 µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 10µA
+125oC - 600 µA
Input Voltage Low VIL VDD = VIS = 10V, VEE = VSS
RL = 1K to VSS
|IIS|, 2µA On/Off Channel
1, 2 +25oC, +125oC,
-55oC-3V
Input Voltage High VIH 1, 2 +25oC, +125oC,
-55oC+7 - V
Propagation Delay
Address to Signal Out
(Channels On or Off)
TPHL
TPLH VDD = 10V VEE = VSS = 0V 1, 2, 3 +25oC - 320 ns
VDD = 15V 1, 2, 3 +25oC - 240 ns
VDD = 5V
VEE = -5V 1, 2, 3 +25oC - 450 ns
Propagation Delay
Inhibit to Signal Out
(Channel Turning On)
TPZH
TPZL VDD = 10V VEE = VSS = 0V 1, 2, 3 +25oC - 320 ns
VDD = 15V 1, 2, 3 +25oC - 240 ns
VDD = 5V
VEE = -10V 1, 2, 3 +25oC - 400 ns
Propagation Delay
Inhibit to Signal Out
(Channel Turning Off)
TPHZ
TPLZ VDD = 10V VEE = VSS = 0V 1, 2, 3 +25oC - 210 ns
VDD = 15V 1, 2, 3 +25oC - 160 ns
VDD = 5V
VEE = -15V 1, 2, 3 +25oC - 300 ns
Input Capacitance CIN Any Address or Inhibit Input 1, 2 +25oC - 7.5 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are char-
acterized on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 10K, Input TR, TF < 20ns.
7-942
Specifications CD4051BMS, CD4052BMS, CD4053BMS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC-25µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage
Delta ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V
P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage
Delta ∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL
TPLH VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x
+25oC
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER SYMBOL DELTA LIMIT
Supply Current - MSI-2 IDD ± 1.0µA
ON Resistance RONDEL10 ± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RONDEL10
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RONDEL10
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RONDEL10
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A, RONDEL10
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS MIL-STD-883
METHOD
TEST READ AND RECORD
PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION OPEN GROUND VDD 9V ± -0.5V
OSCILLATOR
50kHz 25kHz
PART NUMBER CD4051BMS
7-943
Specifications CD4051BMS, CD4052BMS, CD4053BMS
Static Burn-In 1
Note 1 3 1, 2, 4 - 6, 7, 8,
9 - 15 16
Static Burn-In 2
Note 1 3 7, 8 1, 2, 4 - 6, 9 - 16
Dynamic Burn-
In Note 1 - 4 - 6, 7, 8, 9, 12, 14 1, 2, 13, 15, 16 3 11 10
Irradiation
Note 2 3 7, 8 1, 2, 4 - 6, 9 - 16
PART NUMBER CD4052BMS
Static Burn-In 1
Note 1 3, 13 1, 2, 4 - 6, 7, 8,
9 - 12, 14, 15 16
Static Burn-In 2
Note 1 3, 13 7, 8 1, 2, 4 - 6, 9 - 12,
14 - 16
Dynamic Burn-
In Note 1 - 4 - 6, 7, 8, 12, 15 1, 2, 11, 14, 16 3, 13 10 9
Irradiation
Note 2 3, 13 7, 8 1, 2, 4 - 6, 9 - 12,
14 - 16
PART NUMBER CD4053BMS
Static Burn-In 1
Note 1 4, 14, 15 1 - 3, 5 - 8, 9 - 13 16
Static Burn-In 2
Note 1 4, 14, 15 7, 8 1 - 3, 5, 6, 9 - 13,
16
Dynamic Burn-
In Note 1 - 1, 5 - 8, 12 2, 3, 13, 16 4, 14, 15 9 - 11
Irradiation
Note 2 4, 14, 15 7, 8 1 - 3, 5, 6, 9 - 13,
16
NOTE:
1. Each pin except pin 7 VDD and GND will have a series resistor of 10K± 5%, VDD = 18V ± 0.5V
2. Each pin except pin 7 VDD and GND will have a series resistor of 47K±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
Typical Performance Characteristics
FIGURE 1. TYPICAL CHANNEL ON RESISTANCE vs INPUT
SIGNAL VOLTAGE (ALL TYPES) FIGURE 2. TYPICAL CHANNEL ON RESISTANCE vs INPUT
SIGNAL VOLTAGE (ALL TYPES)
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION OPEN GROUND VDD 9V ± -0.5V
OSCILLATOR
50kHz 25kHz
SUPPLY VOLTAGE (VDD - VEE) = 5V
AMBIENT TEMPERATURE
(TA) = +125oC
-55oC
+25oC
600
500
400
300
200
100
0
CHANNEL ON RESISTANCE (RON) (Ω)
-4-3-2-101234
INPUT SIGNAL VOLTAGE (VIS) (V)
SUPPLY VOLTAGE (VDD - VEE) = 10V
AMBIENT TEMPERATURE
(TA) = +125oC
-55oC
+25oC
300
250
200
150
100
50
0
CHANNEL ON RESISTANCE (RON) (Ω)
-10.0 -7.5 -5.0 -2.5 0 2.5 5.0 7.5 10.0
INPUT SIGNAL VOLTAGE (VIS) (V)
7-944
CD4051BMS, CD4052BMS, CD4053BMS
FIGURE 3. TYPICAL CHANNEL ON RESISTANCE vs INPUT
SIGNAL VOLATGE (ALL TYPES) FIGURE 4. TYPICAL CHANNEL ON RESISTANCE vs INPUT
SIGNAL VOLTAGE (ALL TYPES)
FIGURE 5. TYPICAL ON CHARACTERISTICS FOR 1 OF 8
CHANNELS (CD4051BMS) FIGURE 6. TYPICAL DYNAMIC POWER DISSIPATION vs
SWITCHING FREQUENCY (CD4051BMS)
FIGURE 7. TYPICAL DYNAMIC POWER DISSIPATION vs
SWITCHING FREQUENCY (CD4052BMS) FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION vs
SWITCHING FREQUENCY (CD4053BMS)
Typical Performance Characteristics
(Continued)
SUPPLY VOLTAGE (VDD - VEE) = 5V
AMBIENT TEMPERATURE
(TA) = +25oC
600
500
400
300
200
100
0
CHANNEL ON RESISTANCE (RON) (Ω)
-10.0 -7.5 -5.0 -2.5 0 2.5 5.0 7.5 10.0
INPUT SIGNAL VOLTAGE (VIS) (V)
15V
10V
SUPPLY VOLTAGE (VDD - VEE) = 15V
AMBIENT TEMPERATURE
(TA) = +125oC
300
250
200
150
100
50
0
CHANNEL ON RESISTANCE (RON) (Ω)
-10.0 -7.5 -5.0 -2.5 0 2.5 5.0 7.5 10.0
INPUT SIGNAL VOLTAGE (VIS) (V)
-55oC
+25oC
LOAD RESISTANCE
(RL) = 100kΩ, 10kΩ
1500Ω
100Ω
1kΩ
SUPPLY VOLTAGE (VDD) = 5V
VSS = 0V VEE = -5V
AMBIENT TEMPERATURE (TA)
= +25oC
6
4
2
0
-2
-4
-6 -6 -4 -2 0 2 4 6
OUTPUT SIGNAL VOLTAGE (VOS) (V)
INPUT SIGNAL VOLTAGE (VIS) (V)
AMBIENT TEMPERATURE (TA)
ALTERNATING “O” AND
LOAD CAPICATANCE (CL)
= 50pF
“I” PATTERN
= +25oC
SUPPLY VOLTAGE
(VDD) (15V)
10V
10V
5V
CL = 15pF
TEST CIRCUIT
Ι
VDD
105
104
103
102
10
11010
2103104105
fB/DCD4029
POWER DISSIPATION/PACKAGE (PD) (µW)
CD4051
CL
100Ω
VDD
100Ω
ABC
11 10 9
13
14
15
12
1
5
2
4786
3
SWITCHING FREQUENCY (f) (kHz)
AMBIENT TEMPERATURE (TA)
ALTERNATING “O” AND
LOAD CAPICATANCE (CL)
= 50pF
“I” PATTERN
= +25oC
SUPPLY VOLTAGE
(VDD) (15V)
10V
10V
5V
CL = 15pF
TEST CIRCUIT
VDD
105
104
103
102
10
11010
2103104105
fB/D
CD4029
POWER DISSIPATION/PACKAGE (PD) (µW)
CD4051
CL
100Ω
VDD
100Ω
AB
10 9
1
5
2
4
1
6
7
8
3
SWITCHING FREQUENCY (f) (kHz)
13
12
14
15
11
Ι
AMBIENT TEMPERATURE (TA)
ALTERNATING “O” AND
LOAD CAPICATANCE (CL)
= 50pF
“I” PATTERN
= +25oC
SUPPLY VOLTAGE
(VDD) (15V)
10V
10V
5V
CL = 15pF
TEST CIRCUIT
105
104
103
102
10
11010
2103104105
f
POWER DISSIPATION/PACKAGE (PD) (µW)
CD4051
CL
100
VDD
100Ω
3
5
10
6
78
4
SWITCHING FREQUENCY (f) (kHz)
12
13
2
1
15
11
9
Ω
14
Ι
7-945
CD4051BMS, CD4052BMS, CD4053BMS
FIGURE 9. TYPICAL BIAS VOLTAGES
(a) (b) (c) (d)
The ADDRESS (digital-control inputs) and INHIBIT logic levels are:
“0” = VSS and “1” = VDD. The analog signal (through the TG) may
swing from VEE to VDD
7
8
16
VDD = +15V
VEE = 0V
VSS = 0V
7
8
16
7.5V
VSS = 0V
VDD = +7.5V
VEE = -7.5V 7
8
16
5V
VSS = 0V
VDD = +5V
VEE = -10V 7
8
16
5V
VSS = 0V
VDD = +5V
VEE = -5V
7-946
CD4051BMS, CD4052BMS, CD4053BMS
TRUTH TABLE
INPUT STATES “ON” CHANNEL(S)
CD4051BMS
INHIBIT C B A
0 000 0
0 001 1
0 010 2
0 011 3
0 100 4
0 101 5
0 110 6
0 111 7
1 X X X NONE
CD4052BMS
INHIBIT B A
0 0 0 0x, 0y
0 0 1 1x, 1y
0 1 0 2x, 2y
0 1 1 3x, 3y
1 x x NONE
CD4053BMS
INHIBIT A OR B OR C
0 0 ax or bx or cx
0 1 ay or by or cy
1 X NONE
X = Don’t Care
FIGURE 10. WAVEFORM, CHANNEL BEING TURNED ON, OFF
(RL = 1kΩ)
FIGURE 11. WAVEFORM, CHANNEL BEING TURNED OFF, ON
(RL = 1kΩ)
TURN-ON
TIME
10% 50%
90%
10% 10%
50%
90% 90%
50% 10%
TURN-OFF TIME
tr = 20ns tf = 20ns
tPZL
tPLZ
10%
90%
50%
tf = 20nstr = 20ns
90%
50%
10%
90%
10%TURN-ON
TIME
TURN-OFF TIME
tPHZ tPZH
FIGURE 12. PROPAGATION DELAY - ADDRESS INPUT TO SIGNAL OUTPUT
CD4051 CD4052
CD4053
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
RL CL
OUTPUT
VEE
VDD
VSS
VEE
VDD
VSS
VDD
CLOCK
IN
VSS
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
RLCL
OUTPUT
VEE
VDD
VSS
VEE
VDD
VSS
VDD
CLOCK
IN
VSS
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
RL CL
OUTPUT
VEE
VDD
VSS
VEE
VSS
VDD
CLOCK
IN
VSS
7-947
CD4051BMS, CD4052BMS, CD4053BMS
CD4051 CD4052
CD4053
FIGURE 13. PROPAGATION DELAY - INHIBIT INPUT TO SIGNAL OUTPUT
FIGURE 14. TYPICAL TIME-DIVISION APPLICATION OF THE CD4052BMS
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
RL 50pF
OUTPUT
VEE
VDD
VSS VEE
VDD
VSS
VDD
CLOCK
IN VSS
tPHL AND tPLH
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
RL 50pF
OUTPUT
VEE
VDD
VSS VEE
VDD
VSS
VDD
CLOCK
IN VSS
tPHL AND tPLH
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
RL 50pF
OUTPUT
VEE
VDD
VSS VEE
VDD
VSS
VDD
CLOCK
IN VSS
tPHL AND tPLH
COMMUNICATIONS
LINK
DIFF
AMPLIFIER/
LINE DRIVER
DIFF
RECEIVER
DIFF
MULTIPLEXING DEMULTIPLEXING
DIFFERENTIAL
SIGNALS CD4052 CD4052
7-948
CD4051BMS, CD4052BMS, CD4053BMS
Chip Dimensions and Pad Layouts
CD4051BMSH CD4052BMSH
CD4053BMSH
Dimensions in parentheses are in millimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10-3 inch)
METALLIZATION: Thickness: 11kÅ−14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
