+125 OC
TSTG
Symbol Typ
Parameter Conditions Min
Max
Unit
Forward voltage
IF = 500mA
IF = 100mA VFV
0.47
0.36
Reverse current
Capacitance between terminals
VR = 20V
f = 1 MHz, and 0 VDC reverse voltage
IR
CT
uA
pF
100
100
Io = 500 mA
VR = 20 Volts
CDBUR0520
SMD Schottky Barrier DiodeSMD Schottky Barrier Diode
QW-A1076
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.003 gram(approx.).
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Page 1
Typ
IO
VR
VRM
Average forward rectified current
Reverse voltage
Peak reverse voltage
Forward current,surge peak
Symbol
Parameter Conditions Min
Max
Unit
V
V
A
0.5
20
30
Tj
Storage temperature
Junction temperature OC
+125
-40
IFSM
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method) 2A
REV:A
SMD Diodes Specialist
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0603(1608)
0.028(0.70) Typ.
0.018(0.45) Typ.
(RoHs Device)
Capacitance between terminals (PF)
Reverse voltage (V)
RATING AND CHARACTERISTIC CURVES (CDBUR0520)
SMD Schottky Barrier DiodeSMD Schottky Barrier Diode
Page 2
Forward current (mA )
0.2 0.40
10
100
0.5
1
0.7
Forward voltage (V)
Fig. 1 - Forward characteristics
O
-25C
O
25 C
O
5 C7
O
5 C
12
Reverse current ( A )
Reverse voltage (V)
100u
0.1u
1m
100m
10u
1u
0 5 10 15 20
Fig. 2 - Reverse characteristics
O
-25 C
0 5 10 15 20
0
10
20
30
60 f=1MHz
O
Ta=25 C
40
50
0
20
40
60
80
100
0 25 50 75 100 125 150
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
120
1000
QW-A1076
Fig. 3 - Capacitance between
terminals characteristics
0.1 0.3 0.6
10m
O
100 C
O
75 C
O
25 C
REV:A
SMD Diodes Specialist
