GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 464 Wesentliche Merkmale Features * Strahlung im sichtbaren Rotbereich ohne IR-Anteil * Kathode galvanisch mit dem Gehauseboden verbunden * Hohe Zuverlassigkeit * Kurze Schaltzeiten * Gehausegleich mit BP 103, LD 242 * Anwendungsklassen nach DIN 40 040 GQG * * * * * * Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Sensorik * Lichtgitter * LWL * * * * Radiation without IR in the visible red range Cathode is electrically connected to the case High reliability Short switching times Same package as BP 103, LD 242 DIN humidity category in acc. with DIN 40 040 GQG Photointerrupters Sensor technology Light curtains Fiber optic transmision Typ Type Bestellnummer Ordering Code Gehause Package SFH 464 E7800 Q62702P1745 18 A3 DIN 41876 (TO-18), Bodenplatte, klares Epoxy-Gieharz, Anschlusse im 2.54-mm-Raster (1/10''), Anodenkennzeichnung: Nase am Gehauseboden 18 A3 DIN 870 (TO -18), clear epoxy resin, lead spacing 2.54 mm (1/10''), anode marking: projection at package bottom 2008-08-11 1 SFH 464 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 80 C Sperrspannung Reverse voltage VR 3 V Durchlastrom Forward current IF 50 mA Stostrom, tp = 10 s, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 140 mW Warmewiderstand Thermal resistance RthJA RthJC 450 160 K/W K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 50 mA, tp = 20 ms peak 660 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 50 mA 25 nm Abstrahlwinkel1) Half angle1) 23 Grad deg. Aktive Chipflache Active chip area A 0.106 mm2 Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.325 x 0.325 mm 0.3 ... 0.7 mm 100 ns Kennwerte (TA = 25 C) Characteristics Abstand Chipoberflache bis Gehauseoberflache H Distance chip front to case surface Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 50 mA, RL = 50 Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 50 mA, RL = 50 2008-08-11 tr , tf 2 SFH 464 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kapazitat, VR = 0 V, f = 1 MHz Capacitance Co 30 pF Durchlaspannung, IF = 50 mA, tp = 20 ms Forward voltage VF 2.1 ( 2.8) V Sperrstrom, VR = 3 V Reverse current IR 0.01 ( 10) A Gesamtstrahlungsflu, IF = 50 mA, tp = 20 ms Total radiant flux e 11 mW Temperaturkoeffizient von Ie bzw. e, IF = 50 mA Temperature coefficient of Ie or e, IF = 50 mA TCI - 0.4 %/K Temperaturkoeffizient von VF, IF = 50 mA Temperature coefficient of VF, IF = 50 mA TCV -3 mV/K Temperaturkoeffizient von , IF = 50 mA Temperature coefficient of , IF = 50 mA TC + 0.16 nm/K 1) Funote siehe Seite 4. 1) Footnote see Page 4. 2008-08-11 3 SFH 464 Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction1) at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit Strahlstarke1) Radiant intensity1) IF = 50 mA, tp = 20 ms Ie 1 mW/sr 1) Die Messung der Strahlstarke und des Halbwinkels erfolgt mit einer Lochblende vor dem Bauteil (Durchmesser der Lochblende: 1.1 mm; Abstand Lochblende zu Gehauseruckseite: 4 mm). Dadurch wird sichergestellt, da bei der Strahlstarkemessung nur diejenige Strahlung in Achsrichtung bewertet wird, die direkt von der Chipoberflache austritt. Von der Bodenplatte reflektierte Strahlung (vagabundierende Strahlung) wird dagegen nicht bewertet. Diese Reflexionen sind besonders bei Abbildungen der Chipoberflache uber Zusatzoptiken storend (z.B. Lichtschranken groer Reichweite). In der Anwendung werden im allgemeinen diese Reflexionen ebenfalls durch Blenden unterdruckt. Durch dieses, der Anwendung entsprechende Meverfahren ergibt sich fur den Anwender eine besser verwertbare Groe. Diese Lochblendenmessung ist gekennzeichnet durch den Eintrag E 7800", der an die Typenbezeichnung angehangt ist. 1) An aperture is used in front of the component for measurement of the radiant intensity and the half angle (diameter of the aperture: 1.1 mm; distance of aperture to case back side: 4 mm). This ensures that solely the radiation in axial direction emitting directly from the chip surface will be evaluated during measurement of the radiant intensity. Radiation reflected by the bottom plate (stray radiation) will not be evaluated. These reflections impair the projection of the chip surface by additional optics (e.g. long-range light reflection switches). In respect of the application of the component, these reflections are generally suppressed by apertures as well. This measuring procedure corresponding with the application provides more useful values. This aperture measurement is denoted by "E 7800" added to the type designation. Radiation Characteristics Irel = f ()1) 40 30 20 10 0 OHR01457 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 0.8 2008-08-11 0.6 0.4 0 20 40 60 80 100 120 4 SFH 464 Relative Spectral Emission Irel = f () Radiant Intensity Single pulse, tp = 20 s OHR01869 100 Ie = f (IF) Ie 50 mA rel % 10 2 OHR01870 OHR01462 120 F mA e e 50 mA 80 Max. Permissible Forward Current IF = f (TC), RthJC = 160 K/W 100 10 1 80 60 10 0 60 40 40 10 -1 20 20 0 600 650 700 nm 10 -2 750 Forward Current IF = f (VF), single pulse, tp = 20 s 10 0 F tP D= 0.1 tP T F 0 20 40 60 80 C 100 TA Max. Permissible Forward Current IF = f (TA), RthJA = 450 K/W F OHF03861 120 mA 100 T D= 0.005 0.01 0.02 0.05 80 60 0.2 10 2 0.5 10 1 0 10 3 mA F OHR01872 10 4 mA 10 3 10 2 10 2 Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter OHR01871 10 3 mA F 10 1 40 DC 20 10 0 0 1 2008-08-11 2 3 4 5 6 V 7 VF 10 1 10 -5 10 -4 10 -3 10 -2 10 -1 5 s tP 10 1 0 0 20 40 60 80 C 100 TA SFH 464 5) .04 .03 (0 (0 1.1 0.9 5) .03 3) (0 2 .04 (0 0.9 1 1.1 2.54 (0.100) spacing o0.45 (0.018) o4.1 (0.161) Chip position o4.3 (0.169) 2.7 (0.106) 3) Mazeichnung Package Outlines 14.5 (0.571) 3.6 (0.142) 12.5 (0.492) 3.0 (0.118) o5.5 (0.217) o5.2 (0.205) GETY6625 Mae in mm (inch) / Dimensions in mm (inch). Anschlussbelegung Pin configuration 2008-08-11 1 = Anode / anode 2 = Kathode / cathode 6 SFH 464 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2008-08-11 7