To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old com pany name remains in this docum ent, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Ren esas E lectronics assumes no liability whatsoever for any da mages
incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified acco rding to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, et c.
“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electro nic app liances; machine tool s; p ersonal electron ic equipment; and indu strial robots .
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”: Aircraft; aerospace equ i pment; submersible repeaters; nu clear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
interven tion (e.g. excision, et c.), and any oth er applications or purposes that pose a direct th reat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific chara cterist ics such as the o ccurren ce of failure at a certai n rate an d malfunct ion s under certai n u se cond ition s. Further,
Renesas Electronics pr oducts are not subject to radiation resi stance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Renesas Electronics sales office for det ai ls as to enviro nmental matters such as the en vi ronmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as us ed in this document means Renesas Electronics Corporation and also includes its majo ri ty-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
Rev.1.00 Sep 25, 2006 page 1 of 7
H7N0405LD, H7N0405LS, H7N0405LM
Silicon N Channel MOS FET
High Speed Power Switching REJ03G1367-0100
Rev.1.00
Sep 25, 2006
Features
• Low on-resistance
RDS(on) = 4.0 mΩ typ.
• Low drive current.
• Capable of 4.5 V gate drive
Outline
123
4
123
4
123
4
RENESAS Package code:
PRSS0004AE-A
(Package name:
LDPAK (L) )
RENESAS Package code:
PRSS0004AE-B
(Package name:
LDPAK (S)-(1) )
RENESAS Package code:
PRSS0004AE-C
(Package name:
LDPAK (S)-(2) )
H7N0405LD H7N0405LS
H7N0405LM
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
H7N0405LD, H7 N0405LS, H7N0405LM
Rev.1.00 Sep 25, 2006 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Rating Unit
Drain to source voltage VDSS 40 V
Gate to source voltage VGSS ±20 V
Drain current ID 80 A
Drain peak current ID (pulse)Note1 320 A
Body drain diode reverse drai n current IDR 80 A
Avalanche current IAPNote3 40 A
Avalanche energy EARNote3 213 mJ
Channel dissipation PchNote2 80 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source break down voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 40 V, VGS = 0
Gate to source cut off voltage VGS(off) 1.5 — 2.5 V ID = 1 mA, VDS = 10 VNote4
— 4.0 5.0 mΩ I
D = 40 A, VGS = 10 VNote4
Static drain to source on state
resistance RDS(on) — 6.2 8.7 mΩ I
D = 40 A, VGS = 4.5 VNote4
Forward transfer admittance |yfs| 54 90 — S ID = 40 A, VGS = 10 VNote4
Input capacitance Ciss — 5600 — pF
Output capacitance Coss — 825 — pF
Reverse transfer admittance Crss — 550 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge Qg — 100 — nC
Gate to source charge Qgs — 25 — nC
Gate to drain charge Qgd — 25 — nC
VDD = 25 V, VGS = 10 V,
ID = 80 A
Turn-off delay time td(on) — 40 — ns
Rise time tr — 400 — ns
Body-drain diode forward voltage td(off) — 100 — ns
Fall time tf — 26 — ns
VGS = 10 V, ID = 40 A,
RL = 0.75 Ω, Rg = 4.7 Ω
Body-drain diode forward voltage V DF — 0.94 — V IF = 80 A, VGS = 0
Body-drain diode reverse recovery
time trr — 40 — ns
IF = 80 A, VGS = 0
diF/dt = 100 A/µs
Notes: 4. Pulse test
H7N0405LD, H7 N0405LS, H7N0405LM
Rev.1.00 Sep 25, 2006 page 3 of 7
Main Characteristics
160
120
80
050 100 150 200 0.1 0.3 1 310 30 100
100
80
60
40
20
0246 810
1000
300
100
30
10
1
0.3
0.03
0.01
0.1
3
Ta = 25°C
10 µs
100 µs
1 ms
40
4.4 V
4.0 V
10 V
100
80
60
40
20
0123 45
–40°C
25°C
Tc = 150°C
V
DS
= 10 V
Pulse Test
Pulse Test
V
GS
= 3.6 V
6 V
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Gate to Source Voltage V
GS
(V)
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
DC Operation
(Tc = 25°C)
PW = 10 ms
(1 shot)
1 30 100
3
100
1
10
10
3
30
V
GS
= 4.5 V
10 V
Pulse Test
Drain Current I
D
(A)
Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Temperature
5
10
15
–50 0 50 100 150
0
V
GS
= 10 V
4.5 V
Pulse Test
10, 20, 50 A
10, 20, 50 A
Operation in
this area is
limited by R
DS(on)
H7N0405LD, H7 N0405LS, H7N0405LM
Rev.1.00 Sep 25, 2006 page 4 of 7
0 1020304050
100
1000
300
30
10
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
3000
10000
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
100
80
60
40
20
0
20
16
12
8
4
40 80 120 160 200
0
I
D
= 80 A
V
GS
V
DS
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
V
DD
= 40 V
25 V
10 V
V
DD
= 40 V
25 V
10 V
00.4 0.8 1.2 1.6 2.0
Pulse Test
V
GS
= 0, –5 V
5 V
100
80
60
40
20
250
200
150
100
50
25 50 75 100 125 150
0
I
AP
= 40 A
V
DD
= 25 V
duty < 0.1 %
Rg ≥ 50 Ω
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Pulse Width PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10010
Tc = 25°C
D = 1
1shot pulse
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
PW
T
D = PW
T
θch - c(t) = γs (t) • θch - c
θch - c = 1.56°C/ W, Tc = 25°C
10 V
H7N0405LD, H7 N0405LS, H7N0405LM
Rev.1.00 Sep 25, 2006 page 5 of 7
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DS
= 30 V
Vout
Monitor
Rg
H7N0405LD, H7 N0405LS, H7N0405LM
Rev.1.00 Sep 25, 2006 page 6 of 7
Package Dimensions
• H7N0405LD
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Previous Code
PRSS0004AE-A
LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code Unit: mm
Package Name
LDPAK(L)
• H7N0405LS
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Previous Code Unit: mm
Package Name
LDPAK(S)-(1)
H7N0405LD, H7 N0405LS, H7N0405LM
Rev.1.00 Sep 25, 2006 page 7 of 7
• H7N0405LM
1.35g
MASS[Typ.]
LDPAK(S)-(2) / LDPAK(S)-(2)V
PRSS0004AE-C
RENESAS CodeJEITA Package Code Previous Code Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(2.3)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
5.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
Package Name
LDPAK(S)-(2)
Ordering Information
Part Name Quantity Shipping Container
H7N0405LD-E 500 pcs Box (Conductive Sack)
H7N0405LSTL-E 1000 pcs Taping
H7N0405LMTL-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0
