∗hFE Rank Y(50to100), P(70to140), G(90to180)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SA1494
–200
–200
–6
–17
–5
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■Typical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SA1494
–100max
–100max
–200min
50min∗
–2.5max
20typ
500typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=–200V
VEB=–6V
IC=–50mA
VCE=–4V, IC=–8A
IC=–10A, IB=–1A
VCE=–12V, IE=1A
VCB=–10V, f=1MHz
VCC
(V)
–40
RL
(Ω)
4
IC
(A)
–10
VBB2
(V)
5
IB2
(A)
1
ton
(
µ
s)
0.6typ
tstg
(
µ
s)
0.9typ
tf
(
µ
s)
0.2typ
IB1
(A)
–1
2SA1494
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
Safe Operating Area (Single Pulse)
hFE–IC
Temperature Characteristics (Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–17
–1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–1.5A
–50mA
–100mA
–1A
–600mA
–400mA
–200mA
I
B
=–20mA
0
–3
–2
–1
0–1–2–3
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=–15A
–10A
–5A
–0.02 –0.1 –1 –17–10–5–0.5
50
10
100
300
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
Typ
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–2 –10 –100 –300
–0.1
–1
–0.5
–10
–50
–5
3ms
Without Heatsink
Natural Cooling
DC
100ms
20ms
10ms
0.02 0.1 1 10
0
30
10
20
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
fT–IE Characteristics
(Typical)
200
160
120
80
40
5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
(VCE=–4V)
–0.02 –0.1 –0.5 –1 –5 –10 –17
20
50
100
200
Collector Current IC(A)
DC Current Gain hFE
125˚C
25˚C
–30˚C
IC–VBE Temperature Characteristics
(Typical)
0
–17
–15
–10
–5
0–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
θj-a–t Characteristics
1 10 100 1000 2000
Time t(ms)
0.1
1
2
0.5
Transient Thermal Resistance θj-a(˚C/W)