ON Semiconductor MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications. * Collector-Emitter Sustaining Voltage -- * * COLLECTOR VCEO(sus) = 400 Vdc (Min) 175 Watts Capability at 50 Volts Automotive Functional Tests 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS BASE 1k 30 EMITTER IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIII IIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIII IIII III IIIIIIII IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIII IIII IIIII IIII III IIIIIIIIIII IIII IIIII IIII III MAXIMUM RATINGS Rating Symbol MJ10012 MJH10012 Unit Collector-Emitter Voltage VCEO 400 Vdc Collector-Emitter Voltage (RBE = 27 ) VCER 550 Vdc Collector-Base Voltage VCBO 600 Vdc Emitter-Base Voltage VEBO 8.0 Vdc Collector Current -- Continuous -- Peak (1) IC 10 15 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25C @ TC = 100C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg 175 100 1.0 118 47.5 1.05 Watts Watts W/C -65 to +200 -55 to +150 C CASE 1-07 TO-204AA (TO-3) MJ10012 CASE 340D-01 TO-218 TYPE MJH10012 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case RJC 1.0 0.95 C/W TL 275 275 C Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Max Unit (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 1 Publication Order Number: MJ10012/D MJ10012 MJH10012 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIII III IIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (Figure 1) (IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO) VCEO(sus) 400 -- -- Vdc Collector-Emitter Sustaining Voltage (Figure 1) (IC = 200 mAdc, RBE = 27 Ohms, Vclamp = Rated VCER) VCER(sus) 425 -- -- Vdc Collector Cutoff Current (Rated VCER, RBE = 27 Ohms) ICER -- -- 1.0 mAdc Collector Cutoff Current (Rated VCBO, IE = 0) ICBO -- -- 1.0 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO -- -- 40 mAdc 300 100 20 550 350 150 -- 2000 -- -- -- -- -- -- -- 15 2.0 2.5 -- -- -- -- 2.5 3.0 OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 Adc, VCE = 6 0 Vdc) (IC = 6.0 Adc, VCE = 6.0 Vdc) (IC = 10 Adc, VCE = 6.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) (IC = 6.0 Adc, IB = 0.6 Adc) (IC = 10 Adc, IB = 2.0 Adc) VCE(sat) Base Emitter Saturation Voltage (IC = 6.0 Adc, IB = 0.6 Adc) (IC = 10 Adc, IB = 2.0 Adc) VBE(sat) Base Emitter On Voltage (IC = 10 Adc, VCE = 6.0 Vdc) VBE(on) -- -- 2.8 Vdc Vf -- 2.0 3.5 Vdc Cob -- 165 350 pF ts -- 75 15 s tf -- 5.2 15 s Diode Forward Voltage (IF = 10 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) SWITCHING CHARACTERISTICS Storage Time Fall Time (VCC = 12 Vdc, IC = 6.0 Adc, IB1 = IB2 = 0.3 Adc) Figure 2 FUNCTIONAL TESTS Second Breakdown Collector Current with Base-Forward Biased IS/B Pulsed Energy Test (See Figure 12) IC2L/2 (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. http://onsemi.com 2 See Figure 10 -- -- -- 180 mJ MJ10012 MJH10012 VCC 14 V ADJUST UNTIL IC = 6 A VCC = 20 Vdc 10 V 25 s L = 10 mH 0V t1 * 5 ms 220 100 12 V 0 225 s 1N4933 12 V En Vclamp 2N3713 T.U.T. 51 VCEO VCER 2 1N3947 -4V 27 Vclamp VCEO(sus) = 400 Vdc VCER(sus) = 425 Vdc *Adjust t1 such that IC reaches 200 mA at VCE = Vclamp Figure 1. Sustaining Voltage Test Circuit Figure 2. Switching Times Test Circuit http://onsemi.com 3 Eo MJ10012 MJH10012 TJ = 150C 1000 hFE, DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2000 700 500 25C 300 200 30C 100 70 50 30 20 VCE = 3 Vdc VCE = 6 Vdc 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 3 TJ = 25C 2.5 2 10 A 1.5 IC = 0.5 A 0.5 0.05 0.1 0.2 0.002 0.005 0.01 0.02 IB, BASE CURRENT (AMP) 2 2.8 VBE, BASE-EMITTER VOLTAGE (VOLTS) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) 1 0.5 Figure 4. Collector Saturation Region 2.2 IC/IB = 5 1.8 TJ = 150C 1.4 25C 1 - 30C 0.6 0.2 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 7 10 VBE(sat) @ IC/IB = 5 VBE(on) @ VCE = 6 V 2.4 2 TJ = - 30C 1.6 25C 25C 1.2 0.8 150C 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) Figure 5. Collector-Emitter Saturation Voltage 5 7 10 Figure 6. Base-Emitter Voltage 104 10 7 5 IC, COLLECTOR CURRENT (A) ts 3 t, TIME (s) 6 1 Figure 3. DC Current Gain tf 2 1 0.7 0.5 TJ = 25C IC/IB = 20 VCE = 12 Vdc 0.3 0.2 0.1 3 0.2 0.3 0.5 0.7 1 2 3 5 7 IC, COLLECTOR CURRENT (AMP) 10 103 VCE = 250 V TJ = 150C 102 IC = ICES 101 100 75C 25C 10-1 REVERSE -0.2 0 20 FORWARD +0.2 +0.4 +0.6 VBE, BASEEMITTER VOLTAGE (VOLTS) Figure 7. Turn-Off Switching Time Figure 8. Collector Cutoff Region http://onsemi.com 4 +0.8 MJ10012 MJH10012 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.1 0.05 0.02 0.01 0.03 0.02 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) SINGLE PULSE 0.01 0.01 P(pk) RJC(t) = r(t) RJC RJC = C/W MAX 0.02 0.05 0.1 0.2 0.5 1 2 5 10 t, TIME (ms) 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1,000 2,000 Figure 9. Thermal Response 50 IC, COLLECTOR CURRENT (AMP) 20 10 5 MJ10012 MJH10012 2 1 100 s 5.0 ms 1.0 ms dc 0.2 TC = 25C 0.1 0.01 0.005 The data of Figure 10 is based on TC = 25C, TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 5 10 20 30 50 70 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 10. Forward Bias Safe Operating Area 100 SECOND BREAKDOWN DERATING 80 10 Vdc 1.5 VCC = 12 Vdc 10 mH STANCORE C2688 VZ = 400 V 0 Vdc t1 THERMAL DERATING 60 20 220 2N5881 1N4933 T.U.T. 0.3 F 27 MJH10012 MJ10012 20 0 5 ms t1 to be selected such that IC reaches 6 Adc before switch-off. 0 40 160 80 120 TC, CASE TEMPERATURE (C) 200 NOTE: "Usage Test," Figure 12 specifies energy handling capabilities in an automotive ignition circuit. Figure 11. Power Derating Figure 12. Usage Test Circuit http://onsemi.com 5 MJ10012 MJH10012 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M http://onsemi.com 6 INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 MJ10012 MJH10012 PACKAGE DIMENSIONS SOT-93 (TO-218) CASE 340D-02 ISSUE B SCALE 1:1 C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V G http://onsemi.com 7 MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 MJ10012 MJH10012 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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