N-Channel Power MOSFET
XR46000 Product Brief
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FEATURES
Fast switching
ESD improved capability
Low gate charge (Typ. 7.5nC)
Low reverse transfer capacitance
(Typ. 5.0pF)
APPLICATIONS
LED lighting applications
Downlight
High bay
Specialty
Architectural
Description
The XR46000 is a silicon N-channel enhanced power MOSFET.
With low conduction loss, good switching performance and high
avalanche energy, it is suitable for various power supply system,
especially for AC step driving application for LED lighting.
The package type is SOT-223, which comply with the RoHS standard.
Key Parameters
VDSS 600V
ID1.5A
PD (TC = 25°C) 20W
RDS,ON,typ 7.0Ω
Drain
Gate
Source
Figure 1. Equivalent Cirucit
Drain
Gate Source
1 32
Drain
Pin Configuration
SOT-223, Top View
Equivalent Circuit
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XR46000 Product Brief
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carefully checked, no responsibility, however, is assumed for inaccuracies.
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©2016 Exar Corporation
XR46000_PB_092316 2/2
48760 Kato Road
Fremont, CA 94538
USA
Tel.: +1 (510) 668-7000
Fax: +1 (510) 668-7001
Email: LEDtechsupport@exar.com
Ordering Information(1)
Part Number Operating Temperature Range Lead-Free Package Packaging Method
XR46000ESETR
-40°C ≤ TJ ≤ 150°C Yes(2)
SOT-223 Tape and reel
XR46000ECF Dice Wafer
NOTE:
1. Refer to www.exar.com/XR46000 for most up-to-date Ordering Information.
2. Visit www.exar.com for additional information on Environmental Rating.
Please contact LEDtechsupport@exar.com to request a complete datasheet.