Micron Parallel NOR Flash Embedded
Memory (P30-65nm)
JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx,
RD48F4400P0VBQEx, RC48F4400P0VB0Ex,
PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx
Features
High performance
100ns initial access for Easy BGA
110ns initial access for TSOP
25ns 16-word asychronous page read mode
52 MHz (Easy BGA) with zero WAIT states and
17ns clock-to-data output synchronous burst
read mode
4-, 8-, 16-, and continuous word options for burst
mode
Buffered enhanced factory programming (BEFP)
at 2 MB/s (TYP) using a 512-word buffer
1.8V buffered programming at 1.14 MB/s (TYP)
using a 512-word buffer
Architecture
MLC: highest density at lowest cost
Asymmetrically blocked architecture
Four 32KB parameter blocks: top or bottom con-
figuration
128KB main blocks
Blank check to verify an erased block
Voltage and power
VCC (core) voltage: 1.7V to 2.0V
VCCQ (I/O) voltage: 1.7V to 3.6V
Standy current: 65µA (TYP) for 256Mb
52 MHz continuous synchronous read current:
21mA (TYP), 24mA (MAX)
Security
One-time programmable register: 64 OTP bits,
programmed with unique information from Mi-
cron; 2112 OTP bits available for customer pro-
gramming
Absolute write protection: VPP = VSS
Power-transition erase/program lockout
Individual zero-latency block locking
Individual block lock-down
Password access
Software
25μs (TYP) program suspend
25μs (TYP) erase suspend
Flash Data Integrator optimized
Basic command set and extended function Inter-
face (EFI) command set compatible
Common flash interface
Density and Packaging
56-lead TSOP package (256Mb only)
64-ball Easy BGA package (256Mb, 512Mb)
QUAD+ and SCSP packages (256Mb, 512Mb)
16-bit wide data bus
Quality and reliabilty
JESD47 compliant
Operating temperature: –40°C to +85°C
Minimum 100,000 ERASE cycles per block
65nm process technology
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Features
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 1Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Discrete and MCP Part Numbering Information
Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack-
ages or for further information, contact your Micron sales representative. Part numbers can be verified at www.mi-
cron.com. Feature and specification comparison by device type is available at www.micron.com/products. Con-
tact the factory for devices not found.
Note: Not all part numbers listed here are available for ordering.
Table 1: Discrete Part Number Information
Part Number Category Category Details
Package JS = 56-lead TSOP, lead free
PC = 64-ball Easy BGA, lead-free
RC = 64-ball Easy BGA, leaded
Product Line 28F = Micron Flash memory
Density 256 = 256Mb
Product Family P30 (VCC = 1.7 to 2.0V; VCCQ = 1.7 to 3.6V)
Parameter Location B/T = Bottom/Top parameter
Lithography F = 65nm
Features *
Note: 1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor-
mation. Sample part number: JS28F256P30BF*
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Features
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 2Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 2: MCP Part Number Information
Part Number Category Category Details
Package RD = Micron MCP, leaded
PF = Micron MCP, lead-free
RC = 64-ball Easy BGA, leaded
PC = 64-ball Easy BGA, lead-free
Product Line 48F = Micron Flash memory only
Density 0 = No die
4 = 256Mb
Product Family P = Micron Flash memory (P30)
0 = No die
IO Voltage and Chip Configuration Z = Individual Chip Enables
V = Virtual Chip Enables
VCC = 1.7 to 2.0V; VCCQ = 1.7 to 3.6V
Parameter Location B/T = Bottom/Top parameter
Ballout Q = QUAD+
0 = Discrete
Lithography E = 65nm
Features *
Note: 1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor-
mation. Sample part number: RC48F4400P0VB0E*
Table 3: Discrete and MCP Part Combinations
Package Density Packing Media Boot Configuration 1Part Number
JS 256Mb Tray B JS28F256P30BFE
Tape and Reel JS28F256P30BFF
Tray T JS28F256P30TFE
PC 256Mb Tray B PC28F256P30BFE
Tape and Reel PC28F256P30BFF
Tray T PC28F256P30TFE
512Mb
(256Mb/256Mb)
Tray B/T PC48F4400P0VB0EE
Tape and Reel PC48F4400P0VB0EF
PF 256Mb Tray B PF48F4000P0ZBQEF
Tray T PF48F4000P0ZTQEJ
512Mb
(256Mb/256Mb)
Tray B/T PF48F4400P0VBQEF
Tape and Reel PF48F4400P0VBQEK
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Features
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 3Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 3: Discrete and MCP Part Combinations (Continued)
Package Density Packing Media Boot Configuration 1Part Number
RC 256Mb Tray B RC28F256P30BFE
Tray T RC28F256P30TFE
Tape and Reel RC28F256P30TFF
512Mb
(256Mb/256Mb)
Tray B/T RC48F4400P0VB0EJ
RD 512Mb
(256Mb/256Mb)
Tray B/T RD48F4400P0VBQEJ
Note: 1. Bottom Boot/Top Boot = B/T
Table 4: OTP Feature Part Combinations
Package Density Packing Media Boot Configuration 1Part Number
JS
PC 256Mb Tape and Reel B PC28F256P30BFR
PF
RC
RD
Notes: 1. This data sheet covers only standard parts. For OTP parts, contact your local Micron representative.
2. Bottom Boot/Top Boot = B/T
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Features
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 4Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Contents
General Description ......................................................................................................................................... 9
Virtual Chip Enable Description ........................................................................................................................ 9
Memory Map ................................................................................................................................................. 12
Package Dimensions ....................................................................................................................................... 13
Pinouts and Ballouts ....................................................................................................................................... 17
Signal Descriptions ......................................................................................................................................... 21
Bus Operations ............................................................................................................................................... 24
Read .......................................................................................................................................................... 24
Write .......................................................................................................................................................... 24
Output Disable ........................................................................................................................................... 24
Standby ..................................................................................................................................................... 24
Reset .......................................................................................................................................................... 25
Device Command Codes ................................................................................................................................. 26
Device Command Bus Cycles .......................................................................................................................... 29
Read Operations ............................................................................................................................................. 31
Asynchronous Page Mode Read ................................................................................................................... 31
Asynchronous Single Word Read ................................................................................................................. 31
Synchronous Burst Mode Read ................................................................................................................... 32
Read CFI .................................................................................................................................................... 32
Read Device ID ........................................................................................................................................... 32
Device ID Codes ............................................................................................................................................. 33
Program Operations ....................................................................................................................................... 34
Word Programming (40h) ........................................................................................................................... 34
Buffered Programming (E8h, D0h) .............................................................................................................. 34
Buffered Enhanced Factory Programming (80h, D0h) ................................................................................... 35
Program Suspend ....................................................................................................................................... 37
Program Resume ........................................................................................................................................ 38
Program Protection .................................................................................................................................... 38
Erase Operations ............................................................................................................................................ 39
BLOCK ERASE Command ........................................................................................................................... 39
BLANK CHECK Command .......................................................................................................................... 39
ERASE SUSPEND Command ....................................................................................................................... 40
ERASE RESUME Command ........................................................................................................................ 40
Erase Protection ......................................................................................................................................... 40
Security Operations ........................................................................................................................................ 41
Block Locking ............................................................................................................................................. 41
BLOCK LOCK Command ............................................................................................................................ 41
BLOCK UNLOCK Command ....................................................................................................................... 41
BLOCK LOCK DOWN Command ................................................................................................................. 41
Block Lock Status ....................................................................................................................................... 41
Block Locking During Suspend ................................................................................................................... 42
Selectable OTP Blocks ................................................................................................................................. 43
Password Access ......................................................................................................................................... 43
Status Register ................................................................................................................................................ 44
Read Status Register ................................................................................................................................... 44
Clear Status Register ................................................................................................................................... 45
Configuration Register .................................................................................................................................... 46
Read Configuration Register ....................................................................................................................... 46
Read Mode ................................................................................................................................................. 46
Latency Count ............................................................................................................................................ 47
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Features
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 5Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
End of Wordline Considerations .................................................................................................................. 48
WAIT Signal Polarity and Functionality ........................................................................................................ 49
WAIT Delay ................................................................................................................................................ 50
Burst Sequence .......................................................................................................................................... 50
Clock Edge ................................................................................................................................................. 51
Burst Wrap ................................................................................................................................................. 51
Burst Length .............................................................................................................................................. 51
One-Time Programmable Registers ................................................................................................................. 52
Read OTP Registers ..................................................................................................................................... 52
Program OTP Registers ............................................................................................................................... 53
Lock OTP Registers ..................................................................................................................................... 53
Common Flash Interface ................................................................................................................................ 55
READ CFI Structure Output ........................................................................................................................ 55
Flowcharts ..................................................................................................................................................... 68
Power and Reset Specifications ....................................................................................................................... 77
Power Supply Decoupling ........................................................................................................................... 78
Maximum Ratings and Operating Conditions .................................................................................................. 79
DC Electrical Specifications ............................................................................................................................ 80
AC Test Conditions and Capacitance ............................................................................................................... 82
AC Read Specifications ................................................................................................................................... 84
AC Write Specifications ................................................................................................................................... 91
Program and Erase Characteristics .................................................................................................................. 97
Revision History ............................................................................................................................................. 98
Rev. D – 9/15 .............................................................................................................................................. 98
Rev. C – 12/13 ............................................................................................................................................. 98
Rev. B – 8/13 ............................................................................................................................................... 98
Rev. A – 10/12 ............................................................................................................................................. 98
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Features
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 6Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
List of Figures
Figure 1: 512Mb Easy BGA Block Diagram ...................................................................................................... 10
Figure 2: 512Mb QUAD+ Block Diagram ......................................................................................................... 11
Figure 3: Memory Map – 256Mb and 512Mb ................................................................................................... 12
Figure 4: 56-Pin TSOP – 14mm x 20mm .......................................................................................................... 13
Figure 5: 64-Ball Easy BGA – 10mm x 13mm x 1.2mm ...................................................................................... 14
Figure 6: 88-Ball QUAD+ – 8mm x 11mm x 1.0mm: 256Mb Only ...................................................................... 15
Figure 7: 88-Ball QUAD+ – 8mm x 11mm x 1.2mm: 512Mb Only ...................................................................... 16
Figure 8: 56-Lead TSOP Pinout – 256Mb ......................................................................................................... 17
Figure 9: 64-Ball Easy BGA Ballout – 256Mb, 512Mb ........................................................................................ 18
Figure 10: QUAD+ MCP Ballout ..................................................................................................................... 20
Figure 11: Example VPP Supply Connections ................................................................................................... 38
Figure 12: Block Locking State Diagram .......................................................................................................... 42
Figure 13: First Access Latency Count ............................................................................................................ 47
Figure 14: Example Latency Count Setting Using Code 3 ................................................................................. 48
Figure 15: End of Wordline Timing Diagram ................................................................................................... 48
Figure 16: OTP Register Map .......................................................................................................................... 53
Figure 17: Word Program Procedure ............................................................................................................... 68
Figure 18: Buffer Program Procedure .............................................................................................................. 69
Figure 19: Buffered Enhanced Factory Programming (BEFP) Procedure ........................................................... 70
Figure 20: Block Erase Procedure ................................................................................................................... 71
Figure 21: Program Suspend/Resume Procedure ............................................................................................ 72
Figure 22: Erase Suspend/Resume Procedure ................................................................................................. 73
Figure 23: Block Lock Operations Procedure ................................................................................................... 74
Figure 24: OTP Register Programming Procedure ............................................................................................ 75
Figure 25: Status Register Procedure .............................................................................................................. 76
Figure 26: Reset Operation Waveforms ........................................................................................................... 78
Figure 27: AC Input/Output Reference Timing ................................................................................................ 82
Figure 28: Transient Equivalent Load Circuit .................................................................................................. 82
Figure 29: Clock Input AC Waveform .............................................................................................................. 82
Figure 30: Asynchronous Single-Word Read (ADV# LOW) ................................................................................ 86
Figure 31: Asynchronous Single-Word Read (ADV# Latch) ............................................................................... 86
Figure 32: Asynchronous Page Mode Read ...................................................................................................... 87
Figure 33: Synchronous Single-Word Array or Nonarray Read .......................................................................... 88
Figure 34: Continuous Burst Read with Output Delay ..................................................................................... 89
Figure 35: Synchronous Burst Mode 4-Word Read ........................................................................................... 90
Figure 36: Write to Write Timing .................................................................................................................... 93
Figure 37: Asynchronous Read to Write Timing ............................................................................................... 93
Figure 38: Write to Asynchronous Read Timing ............................................................................................... 94
Figure 39: Synchronous Read to Write Timing ................................................................................................ 95
Figure 40: Write to Synchronous Read Timing ................................................................................................ 96
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Features
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 7Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
List of Tables
Table 1: Discrete Part Number Information ...................................................................................................... 2
Table 2: MCP Part Number Information ........................................................................................................... 3
Table 3: Discrete and MCP Part Combinations .................................................................................................. 3
Table 4: OTP Feature Part Combinations .......................................................................................................... 4
Table 5: Virtual Chip Enable Truth Table for 512Mb (QUAD+ Package) ............................................................. 10
Table 6: Virtual Chip Enable Truth Table for 512Mb (Easy BGA Packages) ........................................................ 10
Table 7: TSOP and Easy BGA Signal Descriptions ............................................................................................ 21
Table 8: QUAD+ SCSP Signal Descriptions ...................................................................................................... 22
Table 9: Bus Operations ................................................................................................................................. 24
Table 10: Command Codes and Definitions .................................................................................................... 26
Table 11: Command Bus Cycles ..................................................................................................................... 29
Table 12: Device ID Information .................................................................................................................... 32
Table 13: Device ID codes .............................................................................................................................. 33
Table 14: BEFP Requirements ........................................................................................................................ 36
Table 15: BEFP Considerations ...................................................................................................................... 36
Table 16: Status Register Description .............................................................................................................. 44
Table 17: Read Configuration Register ............................................................................................................ 46
Table 18: End of Wordline Data and WAIT State Comparison ........................................................................... 49
Table 19: WAIT Functionality Table ................................................................................................................ 49
Table 20: Burst Sequence Word Ordering ........................................................................................................ 50
Table 21: Example of CFI Output (x16 device) as a Function of Device and Mode ............................................. 55
Table 22: CFI Database: Addresses and Sections ............................................................................................. 56
Table 23: CFI ID String ................................................................................................................................... 56
Table 24: System Interface Information .......................................................................................................... 57
Table 25: Device Geometry ............................................................................................................................ 58
Table 26: Block Region Map Information ........................................................................................................ 58
Table 27: Primary Vendor-Specific Extended Query ........................................................................................ 59
Table 28: Optional Features Field ................................................................................................................... 60
Table 29: One Time Programmable (OTP) Space Information .......................................................................... 60
Table 30: Burst Read Information ................................................................................................................... 61
Table 31: Partition and Block Erase Region Information .................................................................................. 62
Table 32: Partition Region 1 Information: Top and Bottom Offset/Address ....................................................... 63
Table 33: Partition Region 1 Information ........................................................................................................ 63
Table 34: Partition Region 1: Partition and Erase Block Map Information ......................................................... 66
Table 35: CFI Link Information ...................................................................................................................... 67
Table 36: Additional CFI Link Field ................................................................................................................. 67
Table 37: Power and Reset .............................................................................................................................. 77
Table 38: Maximum Ratings ........................................................................................................................... 79
Table 39: Operating Conditions ...................................................................................................................... 79
Table 40: DC Current Characteristics .............................................................................................................. 80
Table 41: DC Voltage Characteristics .............................................................................................................. 81
Table 42: Test Configuration: Worst-Case Speed Condition .............................................................................. 82
Table 43: Capacitance .................................................................................................................................... 83
Table 44: AC Read Specifications .................................................................................................................... 84
Table 45: AC Write Specifications ................................................................................................................... 91
Table 46: Program and Erase Specifications .................................................................................................... 97
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Features
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 8Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
General Description
The Micron Parallel NOR Flash memory is the latest generation of Flash memory devi-
ces. Benefits include more density in less space, high-speed interface device, and sup-
port for code and data storage. Features include high-performance synchronous-burst
read mode, fast asynchronous access times, low power, flexible security options, and
three industry-standard package choices. The product family is manufactured using Mi-
cron 65nm process technology.
The NOR Flash device provides high performance at low voltage on a 16-bit data bus.
Individually erasable memory blocks are sized for optimum code and data storage.
Upon initial power up or return from reset, the device defaults to asynchronous page-
mode read. Configuring the read configuration register enables synchronous burst-
mode reads. In synchronous burst mode, output data is synchronized with a user-sup-
plied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization.
In addition to the enhanced architecture and interface, the device incorporates technol-
ogy that enables fast factory PROGRAM and ERASE operations. Designed for low-volt-
age systems, the devIce supports READ operations with VCC at the low voltages, and
ERASE and PROGRAM operations with VPP at the low voltages or VPPH. Buffered en-
hanced factory programming (BEFP) provides the fastest Flash array programming per-
formance with VPP at VPPH, which increases factory throughput. With V PP at low voltag-
es, VCC and VPP can be tied together for a simple, ultra low-power design. In addition to
voltage flexibility, a dedicated VPP connection provides complete data protection when
VPP VPPLK.
A command user interface is the interface between the system processor and all inter-
nal operations of the device. The device automatically executes the algorithms and tim-
ings necessary for block erase and program. A status register indicates ERASE or PRO-
GRAM completion and any errors that may have occurred.
An industry-standard command sequence invokes program and erase automation.
Each ERASE operation erases one block. The erase suspend feature enables system soft-
ware to pause an ERASE cycle to read or program data in another block. Program sus-
pend enables system software to pause programming to read other locations. Data is
programmed in word increments (16 bits).
The protection register enables unique device identification that can be used to in-
crease system security. The individual block lock feature provides zero-latency block
locking and unlocking. The device includes enhanced protection via password access;
this new feature supports write and/or read access protection of user-defined blocks. In
addition, the device also provides the full-device OTP security feature.
Virtual Chip Enable Description
The 512Mb device employs a virtual chip enable feature, which combines two 256Mb
die with a common chip enable, F1-CE# for QUAD+ packages, or CE# for Easy BGA
packages. The maximum address bit is then used to select between the die pair with F1-
CE#/CE# asserted, depending upon the package option used. When F1-CE#/CE# is as-
serted and the maximum address bit is LOW, the lower parameter die is selected; when
F1-CE#/CE# is asserted and the maximum address bit is HIGH, the upper parameter die
is selected.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
General Description
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 9Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 5: Virtual Chip Enable Truth Table for 512Mb (QUAD+ Package)
Die Selected F1-CE# A24
Lower Param Die L L
Upper Param Die L H
Table 6: Virtual Chip Enable Truth Table for 512Mb (Easy BGA Packages)
Die Selected CE# A25
Lower Param Die L L
Upper Param Die L H
Figure 1: 512Mb Easy BGA Block Diagram
Parameter Configuration
Easy BGA (Dual Die) Top/Bottom
Bottom Parameter Die
Top Parameter Die
CE#
A[MAX:1]
ADV#
CLK
WE#
OE#
WP#
WAIT
DQ[15:0]
RST#
VPP
VCCQ
VCC
VSS
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Virtual Chip Enable Description
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 2: 512Mb QUAD+ Block Diagram
Parameter Configuration
QUAD+ 512Mb (Dual Die) Top/Bottom
Bottom Parameter Die
256Mb
Top Parameter Die
256Mb
F1-CE#
A[MAX:0]
ADV#
CLK
WE#
OE#
WP#
WAIT
DQ[15:0]
RST#
VPP
VCCQ
VCC
VSS
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Virtual Chip Enable Description
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Memory Map
Figure 3: Memory Map – 256Mb and 512Mb
FF0000 - FF3FFF
FF4000 - FF7FFF
FF8000 - FFBFFF
FFC000 - FFFFFF
FE0000 - FEFFFF
16 KWord Block 255
16 KWord Block 256
16 KWord Block 257
16 KWord Block 258
64 KWord Block 254
010000 - 01FFFF
000000 - 00FFFF
64 KWord Block 1
64 KWord Block 0
Top Boot 256Mb, World-Wide x16 Mode
A[24:1] 256Mb, Easy BGA, TSOP
A[23:0] 256Mb, Quad+
3F0000 - 3FFFFF
7F0000 - 7FFFFF
FF0000 - FFFFFF
000000 - 003FFF
004000 - 007FFF
008000 - 00BFFF
00C000 - 00FFFF
010000 - 01FFFF
020000 - 02FFFF
16 KWord Block 0
16 KWord Block 1
16 KWord Block 2
16 KWord Block 3
64 KWord Block 4
64 KWord Block 5
64 KWord Block 130
64 KWord Block 258
64 KWord Block 66
Bottom Boot 256Mb, World-Wide x16 Mode
A[24:1] 256Mb, Easy BGA, TSOP
A[23:0] 256Mb, Quad+
256Mb 256Mb
000000 - 003FFF
004000 - 007FFF
008000 - 00BFFF
00C000 - 00FFFF
010000 - 01FFFF
020000 - 02FFFF
16 KWord Block 0
16 KWord Block 1
16 KWord Block 2
16 KWord Block 3
64 KWord Block 4
64 KWord Block 5
1FF0000 - 1FF3FFF
1FF4000 - 1FF7FFF
1FF8000 - 1FFBFFF
1FFC000 - 1FFFFFF
1FE0000 - 1FEFFFF
1FD0000 - 1FDFFFF
16 KWord Block 514
16 KWord Block 515
16 KWord Block 516
16 KWord Block 517
64 KWord Block 513
64 KWord Block 512
A[25:1] 512Mb (256Mb/256Mb), Easy BGA, TSOP
A[24:0] 512Mb (256Mb/256Mb), Quad+
512Mb (256Mb/256Mb), World Wide x16 Mode
512Mb (256Mb/256Mb)
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Memory Map
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Package Dimensions
Figure 4: 56-Pin TSOP – 14mm x 20mm
See Detail A
0.5 TYP
14.00 ±0.2
0.25 ±0.1
1.20 MAX
18.4 ±0.2 0.995 ±0.03
20 ±0.2
0.22 ±0.05
Detail A
0.60 ±0.10
0.05 MIN
0.10
Seating
plane
Pin #1 index
See notes 2
See note 2 See note 2
See note 2
0.15 ±0.05
+2°
-3°
Notes: 1. All dimensions are in millimeters. Drawing not to scale.
2. One dimple on package denotes pin 1; if two dimples, then the larger dimple denotes
pin 1. Pin 1 will always be in the upper left corner of the package, in reference to the
product mark.
3. For the lead width value of 0.22 ±0.05, there is also a legacy value of 0.15 ±0.05.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Package Dimensions
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 5: 64-Ball Easy BGA – 10mm x 13mm x 1.2mm
Ball A1 ID
0.78 TYP 0.25 MIN
Seating
plane
0.1
1.20 MAX
1.00 TYP
A
B
C
D
E
F
G
H
8 7 6 5 4 3 2 1
3.0 ±0.1
10 ±0.1
64X Ø0.43 ±0.1
1.00 TYP
13 ±0.1
1.5 ±0.1 Ball A1 ID
Note: 1. All dimensions are in millimeters. Drawing not to scale.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Package Dimensions
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 6: 88-Ball QUAD+ – 8mm x 11mm x 1.0mm: 256Mb Only
Top View - Ball Down Bottom View - Ball Up
A
C
B
E
D
G
F
J
H
K
L
M
12345678
A
C
B
E
D
G
F
J
H
K
L
M
1 2 3 4 5 6 7 8
1.00 MAX
0.10 MAX
0.20 MIN
0.740 TYP
0.80 TYP
0.375 ±0.05
1.20 ±0.10
1.10 ±0.10
11.00 ±0.10
8.00 ±0.10
Note: 1. All dimensions are in millimeters. Drawing not to scale.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Package Dimensions
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 7: 88-Ball QUAD+ – 8mm x 11mm x 1.2mm: 512Mb Only
Top View - Ball Down Bottom View - Ball Up
A
C
B
E
D
G
F
J
H
K
L
M
12345678
A
C
B
E
D
G
F
J
H
K
L
M
1 2 3 4 5 6 7 8
1.20 MAX
0.10 MAX
0.20 MIN
0.860 TYP
0.80 TYP
0.375 ±0.050
1.20 ±0.10
1.10 ±0.10
11.00 ±0.10
8.00 ±0.10
Note: 1. All dimensions are in millimeters. Drawing not to scale.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Package Dimensions
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Pinouts and Ballouts
Figure 8: 56-Lead TSOP Pinout – 256Mb
56-Lead TSOP Pinout
14mm x 20mm
Top View
1
3
4
2
5
7
8
6
9
11
12
10
13
15
16
14
17
19
20
18
21
23
24
22
25
27
28
26
56
54
53
55
52
50
49
51
48
46
45
47
44
42
41
43
40
38
37
39
36
34
33
35
32
30
29
31
A 14
A 13
A 12
A 10
A 9
A 11
VSS
A 23
A 21
A 22
RFU
WP #
A 20
WE #
A 19
A 8
A 7
A 18
A 6
A 4
A 3
A 5
A 2
RFU
VSS
A 24
WAIT
DQ15
DQ7
A17
DQ14
DQ13
DQ5
DQ 6
DQ12
ADV #
CLK
DQ4
RST#
A 16
DQ 3
VPP
DQ10
VCCQ
DQ 9
DQ 2
DQ1
DQ 0
VCC
DQ 8
OE#
CE#
A 1
VSS
A 15
DQ11
Notes: 1. A1 is the least significant address bit.
2. A24 is valid for 256Mb densities; otherwise, it is a no connect (NC).
3. No internal connection on Pin 13; it may be driven or floated. For legacy designs, it is a
VCC pin and can be tied to VCC.
4. One dimple on package denotes Pin 1 which will always be in the upper left corner of
the package, in reference to the product mark.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Pinouts and Ballouts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 9: 64-Ball Easy BGA Ballout – 256Mb, 512Mb
18
2 3 4 56 7
H
G
F
E
D
C
A
A2 VSS A9 A14CE # A19 RFUA25
RFU VSS VCC DQ13VSS DQ7 A24VSS
A3 A7 A10 A15A12 A20 A21WP#
A4 A5 A11 VCCQ
RST # A16 A17VCCQ
RFUDQ8 DQ1 DQ9 DQ4DQ3 DQ15CLK
RFU OE#DQ0 DQ10 DQ12DQ11 WAITADV#
WE#A23 RFU DQ2 DQ5VCCQ DQ14DQ6
A1 A6 A8 A13VPP A18 A22VCC
B
Notes: 1. A1 is the least significant address bit.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Pinouts and Ballouts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
2. A24 is valid for 256Mb densities and above; otherwise, it is a no connect (NC).
3. A25 is valid for 512Mb densities; otherwise, it is a no connect.
4. One dimple on package denotes A1 pin, which will always be in the upper-left corner of
the package, in reference to the product mark.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Pinouts and Ballouts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 10: QUAD+ MCP Ballout
Notes: 1. A23 is valid for 256Mb densities and above; otherwise, it is a no connect.
2. A24 is valid for 512Mb densities and above; otherwise, it is a no connect.
3. F2-CE# and F2-OE# are no connect for all densities.
4. A0 is LSB for Address.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Pinouts and Ballouts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Signal Descriptions
Table 7: TSOP and Easy BGA Signal Descriptions
Symbol Type Name and Function
A[MAX:1] Input Address inputs: Device address inputs.
Note: Unused active address pins should not be left floating; tie them to VCCQ or VSS ac-
cording to specific design requirements.
ADV# Input Address valid: Active LOW input. During synchronous READ operations, addresses are
latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# LOW, which-
ever occurs first. In asynchronous mode, the address is latched when ADV# goes HIGH or
continuously flows through if ADV# is held LOW.
Note: Designs not using ADV# must tie it to VSS to allow addresses to flow through.
CE# Input Chip enable: Active LOW input. CE# LOW selects the associated die. When asserted, inter-
nal control logic, input buffers, decoders, and sense amplifiers are active. When de-asser-
ted, the associated die is deselected, power is reduced to standby levels, data and wait
outputs are placed in High-Z.
Note: CE# must be driven HIGH when device is not in use.
CLK Input Clock: Synchronizes the device with the system bus frequency in synchronous-read mode.
During synchronous READs, addresses are latched on the rising edge of ADV#, or on the
next valid CLK edge with ADV# LOW, whichever occurs first.
Note:Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.
OE# Input Output enable: Active LOW input. OE# LOW enables the device’s output data buffers
during READ cycles. OE# HIGH places the data outputs and WAIT in High-Z.
RST# Input Reset: Active LOW input. RST# resets internal automation and inhibits WRITE operations.
This provides data protection during power transitions. RST# HIGH enables normal opera-
tion. Exit from reset places the device in asynchronous read array mode.
WP# Input Write protect: Active LOW input. WP# LOW enables the lock-down mechanism. Blocks in
lock-down cannot be unlocked with the Unlock command. WP# HIGH overrides the lock-
down function enabling blocks to be erased or programmed using software commands.
Note: Designs not using WP# for protection could tie it to VCCQ or VSS without additional
capacitor.
WE# Input Write enable: Active LOW input. WE# controls writes to the device. Address and data are
latched on the rising edge of WE# or CE#, whichever occurs first.
VPP Power/Input Erase and program power: A valid voltage on this pin allows erasing or programming.
Memory contents cannot be altered when VPP VPPLK. Block erase and program at invalid
VPP voltages should not be attempted.
Set VPP = VPPL for in-system PROGRAM and ERASE operations. To accommodate resistor or
diode drops from the system supply, the VIH level of VPP can be as low as VPPL,min . VPP must
remain above VPPL,min to perform in-system modification. VPP may be 0V during READ op-
erations.
VPP can be connected to 9V for a cumulative total not to exceed 80 hours. Extended use of
this pin at 9V may reduce block cycling capability.
DQ[15:0] Input/Output Data input/output: Inputs data and commands during WRITE cycles; outputs data during
memory, status register, protection register, and read configuration register reads. Data
balls float when the CE# or OE# are de-asserted. Data is internally latched during writes.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Signal Descriptions
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 7: TSOP and Easy BGA Signal Descriptions (Continued)
Symbol Type Name and Function
WAIT Output Wait: Indicates data valid in synchronous array or non-array burst reads. Read configura-
tion register bit 10 (RCR.10, WT) determines its polarity when asserted. This signal's active
output is VOL or VOH when CE# and OE# are VIL. WAIT is High-Z if CE# or OE# is VIH.
In synchronous array or non-array read modes, this signal indicates invalid data when as-
serted and valid data when de-asserted.
In asynchronous page mode, and all write modes, this signal is de-asserted.
VCC Power Device core power supply: Core (logic) source voltage. Writes to the array are inhibited
when VCC VLKO. Operations at invalid VCC voltages should not be attempted.
VCCQ Power Output power supply: Output-driver source voltage.
VSS Power Ground: Connect to system ground. Do not float any VSS connection.
RFU Reserved for future use: Reserved by Micron for future device functionality and en-
hancement. These should be treated in the same way as a DU signal.
DU Do not use: Do not connect to any other signal, or power supply; must be left floating.
NC No connect: No internal connection; can be driven or floated.
Table 8: QUAD+ SCSP Signal Descriptions
Symbol Type Name and Function
A[MAX:0] Input Address inputs: Device address inputs. 256Mb: A[23:0]; 512Mb: A[24:0]. Note: The virtual
selection of the 256Mb top parameter die in the dual-die 512Mb configuration is accom-
plished by setting A24 HIGH.
Note: The address pins unused in design should not be left floating; tie them to VCCQ or
VSS according to specific design requirements. Note: When handling the QUAD + SCSP
package, note that LSB is A0; address conversion is necessary.
ADV# Input Address valid: Active LOW input. During synchronous READ operations, addresses are
latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# LOW, which-
ever occurs first.
In asynchronous mode, the address is latched when ADV# goes HIGH or continuously flows
through if ADV# is held LOW.
Note: Designs not using ADV# must tie it to VSS to allow addresses to flow through.
F1-CE# Input Flash chip enable: Active LOW input. F1-CE# LOW selects the associated die. When asser-
ted, internal control logic, input buffers, decoders, and sense amplifiers are active. When
de-asserted, the associated die is deselected, power is reduced to standby levels, data and
wait outputs are placed in High-Z.
Note: F1-CE# must be driven HIGH when device is not in use.
CLK Input Clock: Synchronizes the device with the system bus frequency in synchronous-read mode.
During synchronous READ operations, addresses are latched on the rising edge of ADV#,
or on the next valid CLK edge with ADV# LOW, whichever occurs first.
Note: Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.
F1-OE# Input Output enable: Active LOW input. F1-OE# LOW enables the device’s output data buffers
during READ cycles. F1-OE# HIGH places the data outputs and wait in High-Z.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Signal Descriptions
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 8: QUAD+ SCSP Signal Descriptions (Continued)
Symbol Type Name and Function
RST# Input Reset: Active LOW input. RST# resets internal automation and inhibits WRITE operations.
This provides data protection during power transitions. RST# HIGH enables normal opera-
tion. Exit from reset places the device in asynchronous read array mode.
WE# Input Write enable: Active LOW input. WE# controls writes to the device. Address and data are
latched on the rising edge of WE# or CE#, whichever occurs first.
WP# Input Write protect: Active LOW input. WP# LOW enables the lock-down mechanism. Blocks in
lock-down cannot be unlocked with the UNLOCK command. WP# HIGH overrides the lock-
down function enabling blocks to be erased or programmed using software commands.
Note: Designs not using WP# for protection could tie it to VCCQ or VSS without additional
capacitor.
VPP Power/lnput Erase and program power: A valid voltage on this pin allows erasing or programming.
Memory contents cannot be altered when VPP VPPLK. Block erase and program at invalid
VPP voltages should not be attempted.
Set VPP = VPPL for in-system PROGRAM and ERASE operations. To accommodate resistor or
diode drops from the system supply, the VIH level of VPP can be as low as VPPL,min . VPP must
remain above VPPL,min to perform in-system flash modification. VPP may be 0V during READ
operations.
VPPH can be applied to main blocks for 1000 cycles maximum and to parameter blocks for
2500 cycles. VPP can be connected to 9V for a cumulative total not to exceed 80 hours. Ex-
tended use of this pin at 9V may reduce block cycling capability.
DQ[15:0] Input/Output Data input/output: Inputs data and commands during WRITE cycles; outputs data during
memory, status register, protection register, and read configuration register reads. Data
balls float when the CE# or OE# are de-asserted. Data is internally latched during writes.
WAIT Output Wait: Indicates data valid in synchronous array or non-array burst reads. Read configura-
tion register bit 10 (RCR.10, WT) determines its polarity when asserted. The active output is
VOL or VOH when CE# and OE# are VIL. WAIT is High-Z if CE# or OE# is VIH.
In synchronous array or non-array read modes, WAIT indicates invalid data when asser-
ted and valid data when de-asserted.
In asynchronous page mode, and all write modes, WAIT is de-asserted.
VCC Power Device core power supply: Core (logic) source voltage. Writes to the array are inhibited
when VCC VLKO. Operations at invalid VCC voltages should not be attempted.
VCCQ Power Output power supply: Output driver source voltage.
VSS Power Ground: Connect to system ground. Do not float any VSS connection.
RFU Reserved for future use: Reserved by Micron for future device functionality and en-
hancement. These should be treated in the same way as a DU signal.
DU Do not use: Do not connect to any other signal, or power supply; must be left floating.
NC No connect: No internal connection; can be driven or floated.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Signal Descriptions
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 23 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Bus Operations
CE# LOW and RST# HIGH enable READ operations. The device internally decodes up-
per address inputs to determine the accessed block. ADV# LOW opens the internal ad-
dress latches. OE# LOW activates the outputs and gates selected data onto the I/O bus.
Bus cycles to/from the device conform to standard microprocessor bus operations. Bus
operations and the logic levels that must be applied to the device control signal inputs
are shown here.
Table 9: Bus Operations
Bus Operation RST# CLK ADV# CE# OE# WE# WAIT DQ[15:0] Notes
READ Asynchronous H X L L L H De-asserted Output -
Synchronous H Run-
ning
L L L H Driven Output -
WRITE H X L L H L High-Z Input 1
OUTPUT DISABLE H X X L H H High-Z High-Z 2
STANDBY H X X H X X High-Z High-Z 2
RESET L X X X X X High-Z High-Z 2, 3
Notes: 1. Refer to the Device Command Bus Cycles for valid DQ[15:0] during a WRITE operation.
2. X = "Don’t Care" (H or L).
3. RST# must be at VSS ± 0.2V to meet the maximum specified power-down current.
Read
To perform a READ operation, RST# and WE# must be de-asserted while CE# and OE#
are asserted. CE# is the device-select control. When asserted, it enables the device. OE#
is the data-output control. When asserted, the addressed flash memory data is driven
onto the I/O bus.
Write
To perform a WRITE operation, both CE# and WE# are asserted while RST# and OE# are
de-asserted. During a WRITE operation, address and data are latched on the rising edge
of WE# or CE#, whichever occurs first. The Command Bus Cycles table shows the bus
cycle sequence for each of the supported device commands, while the Command Codes
and Definitions table describes each command.
Note: WRITE operations with invalid VCC and/or VPP voltages can produce spurious re-
sults and should not be attempted.
Output Disable
When OE# is de-asserted, device outputs DQ[15:0] are disabled and placed in High-Z
state, WAIT is also placed in High-Z.
Standby
When CE# is de-asserted the device is deselected and placed in standby, substantially
reducing power consumption. In standby, the data outputs are placed in High-Z, inde-
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Bus Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 24 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
pendent of the level placed on OE#. Standby current (ICCS) is the average current meas-
ured over any 5ms time interval, 5μs after CE# is de-asserted. During standby, average
current is measured over the same time interval 5μs after CE# is de-asserted.
When the device is deselected (while CE# is de-asserted) during a PROGRAM or ERASE
operation, it continues to consume active power until the PROGRAM or ERASE opera-
tion is completed.
Reset
As with any automated device, it is important to assert RST# when the system is reset.
When the system comes out of reset, the system processor attempts to read from the
device if it is the system boot device. If a CPU reset occurs with no device reset, improp-
er CPU initialization may occur because the device may be providing status informa-
tion rather than array data. Micron devices enable proper CPU initialization following a
system reset through the use of the RST# input. RST# should be controlled by the same
low-true reset signal that resets the system CPU.
After initial power-up or reset, the device defaults to asynchronous read array mode,
and the status register is set to 0x80. Asserting RST# de-energizes all internal circuits,
and places the output drivers in High-Z. When RST# is asserted, the device shuts down
the operation in progress, a process which takes a minimum amount of time to com-
plete. When RST# has been de-asserted, the device is reset to asynchronous read array
state.
When device returns from a reset (RST# de-asserted), a minimum wait is required be-
fore the initial read access outputs valid data. Also, a minimum delay is required after a
reset before a write cycle can be initiated. After this wake-up interval passes, normal op-
eration is restored.
Note: If RST# is asserted during a PROGRAM or ERASE operation, the operation is ter-
minated and the memory contents at the aborted location (for a program) or block (for
an erase) are no longer valid, because the data may have been only partially written or
erased.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Bus Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 25 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Device Command Codes
The system CPU provides control of all in-system READ, WRITE, and ERASE operations
of the device via the system bus. The device manages all block-erase and word-program
algorithms.
Device commands are written to the CUI to control all device operations. The CUI does
not occupy an addressable memory location; it is the mechanism through which the
device is controlled.
Note: For a dual device, all setup commands should be re-issued to the device when a
different die is selected.
Table 10: Command Codes and Definitions
Mode Device Mode Code Description
Read Read array 0xFF Places the device in read array mode. Array data is output on DQ[15:0].
Read status register 0x70 Places the device in read status register mode. The device enters this
mode after a PROGRAM or ERASE command is issued. Status register
data is output on DQ[7:0].
Read device ID
or read configura-
tion register
0x90 Places device in read device identifier mode. Subsequent reads output
manufacturer/device codes, configuration register data, block lock sta-
tus, or protection register data on DQ[15:0].
Read CFI 0x98 Places the device in read CFI mode. Subsequent reads output CFI infor-
mation on DQ[7:0].
Clear status register 0x50 The device sets status register error bits. The clear status register com-
mand is used to clear the SR error bits.
Write Word program setup 0x40 First cycle of a 2-cycle programming command; prepares the CUI for a
WRITE operation. On the next write cycle, the address and data are
latched and the device executes the programming algorithm at the ad-
dressed location. During PROGRAM operations, the device responds
only to READ STATUS REGISTER and PROGRAM SUSPEND commands.
CE# or OE# must be toggled to update the status register in asynchro-
nous read. CE# or ADV# must be toggled to update the status register
data for synchronous non-array reads. The READ ARRAY command
must be issued to read array data after programming has finished.
Buffered program 0xE8 This command loads a variable number of words up to the buffer size
of 512 words onto the program buffer.
Buffered program
confirm
0xD0 The CONFIRM command is issued after the data streaming for writing
into the buffer is completed. The device then performs the buffered
program algorithm, writing the data from the buffer to the memory
array.
BEFP setup 0x80 First cycle of a two-cycle command; initiates buffered enhanced factory
program mode (BEFP). The CUI then waits for the BEFP CONFIRM com-
mand, 0xD0, that initiates the BEFP algorithm. All other commands are
ignored when BEFP mode begins.
BEFP confirm 0xD0 If the previous command was BEFP SETUP (0x80), the CUI latches the
address and data, and prepares the device for BEFP mode.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Device Command Codes
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 26 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 10: Command Codes and Definitions (Continued)
Mode Device Mode Code Description
Erase Block erase setup 0x20 First cycle of a two-cycle command; prepares the CUI for a BLOCK
ERASE operation. The device performs the erase algorithm on the
block addressed by the ERASE CONFIRM command. If the next com-
mand is not the ERASE CONFIRM (0xD0) command, the CUI sets status
register bits SR4 and SR5, and places the device in read status register
mode.
Block erase confirm 0xD0 If the first command was BLOCK ERASE SETUP (0x20), the CUI latches
the address and data, and the device erases the addressed block. Dur-
ing BLOCK ERASE operations, the device responds only to READ STATUS
REGISTER and ERASE SUSPEND commands. CE# or OE# must be toggled
to update the status register in asynchronous read. CE# or ADV# must
be toggled to update the status register data for synchronous non-ar-
ray reads.
Suspend Program or erase
suspend
0xB0 This command issued to any device address initiates a suspend of the
currently-executing program or BLOCK ERASE operation. The status
register indicates successful suspend operation by setting either SR2
(program suspended) or SR6 (erase suspended), along with SR7 (ready).
The device remains in the suspend mode regardless of control signal
states (except for RST# asserted).
Suspend resume 0xD0 This command issued to any device address resumes the suspended
PROGRAM or BLOCK ERASE operation.
Protection Block lock setup 0x60 First cycle of a two-cycle command; prepares the CUI for block lock con-
figuration changes. If the next command is not BLOCK LOCK (0x01),
BLOCK UNLOCK (0xD0), or BLOCK LOCK DOWN (0x2F), the CUI sets sta-
tus register bits SR5 and SR4, indicating a command sequence error.
Block lock 0x01 If the previous command was BLOCK LOCK SETUP (0x60), the addressed
block is locked.
Block unlock 0xD0 If the previous command was BLOCK LOCK SETUP (0x60), the addressed
block is unlocked. If the addressed block is in a lock down state, the op-
eration has no effect.
Block lock down 0x2F If the previous command was BLOCK LOCK SETUP (0x60), the addressed
block is locked down.
OTP register or lock
register program set-
up
0xC0 First cycle of a two-cycle command; prepares the device for a OTP REG-
ISTER or LOCK REGISTER PROGRAM operation. The second cycle latches
the register address and data, and starts the programming algorithm
to program data the OTP array.
Configuration Read configuration
register setup
0x60 First cycle of a two-cycle command; prepares the CUI for device read
configuration. If the SET READ CONFIGURATION REGISTER command
(0x03) is not the next command, the CUI sets status register bits SR4
and SR5, indicating a command sequence error.
Read configuration
register
0x03 If the previous command was READ CONFIGURATION REGISTER SETUP
(0x60), the CUI latches the address and writes A[16:1] to the read con-
figuration register for Easy BGA and TSOP, A[15:0] for QUAD+. Follow-
ing a CONFIGURE READ CONFIGURATION REGISTER command, subse-
quent READ operations access array data.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Device Command Codes
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 27 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 10: Command Codes and Definitions (Continued)
Mode Device Mode Code Description
Blank Check Block blank check 0xBC First cycle of a two-cycle command; initiates the BLANK CHECK opera-
tion on a main block.
Block blank check
confirm
0xD0 Second cycle of blank check command sequence; it latches the block
address and executes blank check on the main array block.
EFI Extended function
interface
0xEB First cycle of a multiple-cycle command; initiate operation using exten-
ded function interface. The second cycle is a Sub-Op-Code, the data
written on third cycle is one less than the word count; the allowable
value on this cycle are 0–511. The subsequent cycles load data words in-
to the program buffer at a specified address until word count is ach-
ieved.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Device Command Codes
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 28 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Device Command Bus Cycles
Device operations are initiated by writing specific device commands to the command
user interface (CUI). Several commands are used to modify array data including WORD
PROGRAM and BLOCK ERASE commands. Writing either command to the CUI initiates
a sequence of internally timed functions that culminate in the completion of the re-
quested task. However, the operation can be aborted by either asserting RST# or by is-
suing an appropriate suspend command.
Table 11: Command Bus Cycles
Mode Command
Bus
Cycles
First Bus Cycle Second Bus Cycle
Op Addr1Data2Op Addr1Data2
Read READ ARRAY 1 WRITE DnA 0xFF
READ DEVICE IDENTIFIER 2 WRITE DnA 0x90 READ DBA + IA ID
READ CFI 2 WRITE DnA 0x98 READ DBA + CFI-A CFI-D
READ STATUS REGISTER 2 WRITE DnA 0x70 READ DnA SRD
CLEAR STATUS REGISTER 1 WRITE DnA 0x50
Program WORD PROGRAM 2 WRITE WA 0x40 WRITE WA WD
BUFFERED PROGRAM3>2 WRITE WA 0xE8 WRITE WA N - 1
BUFFERED ENHANCED
FACTORY PROGRAM
(BEFP)4
>2 WRITE WA 0x80 WRITE WA 0xD0
Erase BLOCK ERASE 2 WRITE BA 0x20 WRITE BA 0xD0
Suspend PROGRAM/ERASE SUSPEND 1 WRITE DnA 0xB0
PROGRAM/ERASE RESUME 1 WRITE DnA 0xD0
Protection BLOCK LOCK 2 WRITE BA 0x60 WRITE BA 0x01
BLOCK UNLOCK 2 WRITE BA 0x60 WRITE BA 0xD0
BLOCK LOCK DOWN 2 WRITE BA 0x60 WRITE BA 0x2F
PROGRAM OTP REGISTER 2 WRITE PRA 0xC0 WRITE OTP-RA OTP-D
PROGRAM LOCK REGISTER 2 WRITE LRA 0xC0 WRITE LRA LRD
Configuration CONFIGURE READ
CONFIGURATION REGISTER
2 WRITE RCD 0x60 WRITE RCD 0x03
Blank Check BLOCK BLANK CHECK 2 WRITE BA 0xBC WRITE BA D0
EFI EXTENDED FUNCTION
INTERFACE 5
>2 WRITE WA 0xEB Write WA Sub-Op code
Notes: 1. First command cycle address should be the same as the operation’s target address. DBA
= Device base address (needed for dual die 512Mb device); DnA = Address within the de-
vice; IA = Identification code address offset; CFI-A = Read CFI address offset; WA = Word
address of memory location to be written; BA = Address within the block; OTP-RA = Pro-
tection register address; LRA = Lock register address; RCD = Read configuration register
data on A[16:1] for Easy BGA and TSOP, A[15:0] for QUAD+ package.
2. ID = Identifier data; CFI-D = CFI data on DQ[15:0]; SRD = Status register data; WD = Word
data; N = Word count of data to be loaded into the write buffer; OTP-D = Protection
register data; LRD = Lock register data.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Device Command Bus Cycles
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 29 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
3. The second cycle of the BUFFERED PROGRAM command is the word count of the data to
be loaded into the write buffer. This is followed by up to 512 words of data. Then the
CONFIRM command (0xD0) is issued, triggering the array programming operation.
4. The CONFIRM command (0xD0) is followed by the buffer data.
5. The second cycle is a Sub-Op-Code, the data written on third cycle is N-1; 1 N 512.
The subsequent cycles load data words into the program buffer at a specified address
until word count is achieved, after the data words are loaded, the final cycle is the con-
firm cycle 0xD0).
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Device Command Bus Cycles
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Read Operations
The device supports two read modes: asynchronous page mode and synchronous burst
mode. Asynchronous page mode is the default read mode after device power-up or a re-
set. Under asynchronous page mode, the device can also perform single word read. The
read configuration register must be configured to enable synchronous burst reads of the
array.
The device can be in any of four read states: read array, read identifier, read status, or
read CFI. Upon power-up, or after a reset, the device defaults to read array. To change
the read state, the appropriate READ command must be written to the device.
Asynchronous Page Mode Read
Following a device power-up or reset, asynchronous page mode is the default read
mode and the device is set to read array. However, to perform array reads after any other
device operation (WRITE operation), the READ ARRAY command must be issued in or-
der to read from the array.
Asynchronous page mode reads can only be performed when read configuration regis-
ter bit RCR15 is set.
To perform an asynchronous page-mode read, an address is driven onto the address
bus, and CE# and ADV# are asserted. WE# and RST# must already have been de-asser-
ted. WAIT is de-asserted during asynchronous page mode. ADV# can be driven HIGH to
latch the address, or it must be held LOW throughout the READ cycle. CLK is not used
for asynchronous page mode reads, and is ignored. If only asynchronous reads are to be
performed, CLK should be tied to a valid VIH or VSS level, WAIT signal can be floated,
and ADV# must be tied to ground. Array data is driven onto DQ[15:0] after an initial ac-
cess time tAVQV delay.
In asynchronous page mode, 16 data words are “sensed” simultaneously from the array
and loaded into an internal page buffer. The buffer word corresponding to the initial
address on the address bus is driven onto DQ[15:0] after the initial access delay. The
lowest four address bits determine which word of the 16-word page is output from the
data buffer at any given time.
Note: Asynchronous page read mode is only supported in main array.
Asynchronous Single Word Read
To perform an asynchronous single word read, an address is driven onto the address
bus, and CE# is asserted. ADV# can either be driven HIGH to latch the address or be
held LOW throughout the READ cycle. WE# and RST# must already have been de-asser-
ted. WAIT is set to a de-asserted state during single word mode, as determined by bit 10
of the read configuration register. CLK is not used for asynchronous single word reads,
and is ignored. If asynchronous reads are to be performed only, CLK should be tied to a
valid VIH or VSS level, WAIT can be floated, and ADV# must be tied to ground. After OE#
is asserted, the data is driven onto DQ[15:0] after an initial access time tAVQV or tGLQV
delay.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Read Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Synchronous Burst Mode Read
Read configuration register bits RCR[15:0] must be set before synchronous burst opera-
tion can be performed. Synchronous burst mode can be performed for both array and
non-array reads such as read ID, read status, or read query.
To perform a synchronous burst read, an initial address is driven onto the address bus,
and CE# and ADV# are asserted. WE# and RST# must already have been de-asserted.
ADV# is asserted, and then de-asserted to latch the address. Alternately, ADV# can re-
main asserted throughout the burst access, in which case the address is latched on the
next valid CLK edge while ADV# is asserted.
During synchronous array and non-array read modes, the first word is output from the
data buffer on the next valid CLK edge after the initial access latency delay. Subsequent
data is output on valid CLK edges following a minimum delay. However, for a synchro-
nous non-array read, the same word of data will be output on successive clock edges
until the burst length requirements are satisfied. Refer to the timing diagrams for more
detailed information.
Read CFI
The READ CFI command instructs the device to output CFI data when read. See Com-
mon Flash Interface for details on issuing the READ CFI command, and for details on
addresses and offsets within the CFI database.
Read Device ID
The READ DEVICE IDENTIFIER command instructs the device to output manufacturer
code, device identifier code, block lock status, protection register data, or configuration
register data.
Table 12: Device ID Information
Item Address Data
Manufacturer code 0x00 0x89
Device ID code 0x01 ID (see the Device ID Codes table )
Block lock configuration
Block is unlocked
Block is locked
Block is not locked down
Block is locked down
Block base address + 0x02 Lock bit
DQ0 = 0b0
DQ0 = 0b1
DQ1 = 0b0
DQ1 = 0b1
Read configuration register 0x05 RCR contents
General purpose register Device base address + 0x07 General purpose register data
Lock register 0 0x80 PR-LK0 data
64-bit factory-programmed OTP register 0x81–0x84 Factory OTP register data
64-bit user-programmable OTP register 0x85–0x88 User OTP register data
Lock register 1 0x89 PR-LK1 OTP register lock data
128-bit user-programmable protection regis-
ters
0x8A–0x109 OTP register data
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Read Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 32 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Device ID Codes
Table 13: Device ID codes
ID Code Type
Device
Density
Device Identifier Codes
–T
(Top Parameter)
–B
(Bottom Parameter)
Device Code 256Mb 8919 891C
Note: 1. The 512Mb devices do not have a unique device ID associated with them. Each die with-
in the stack can be identified by device ID codes.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Device ID Codes
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 33 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Program Operations
Successful programming requires the addressed block to be unlocked. If the block is
locked down, WP# must be de-asserted and the block must be unlocked before at-
tempting to program the block. Attempting to program a locked block causes a program
error (SR4 and SR1 set) and termination of the operation. See Security Modes for details
on locking and unlocking blocks.
Word Programming (40h)
Word programming operations are initiated by writing the WORD PROGRAM SETUP
command to the device (see the Command Codes and Definitions table). This is fol-
lowed by a second write to the device with the address and data to be programmed. The
device outputs status register data when read (see the Word Program Flowchart). VPP
must be above VPPLK, and within the specified VPPL MIN/MAX values.
During programming, the device executes a sequence of internally-timed events that
program the desired data bits at the addressed location, and verifies that the bits are
sufficiently programmed. Programming the array changes 1s to 0s. Memory array bits
that are 0s can be changed to 1s only by erasing the block (see Erase Operations).
The status register can be examined for programming progress and errors by reading at
any address. The device remains in the read status register state until another com-
mand is written to the device.
SR7 indicates the programming status while the sequence executes. Commands that
can be issued to the device during programming are PROGRAM SUSPEND, READ STA-
TUS REGISTER, READ DEVICE IDENTIFIER, READ CFI, and READ ARRAY (this returns
unknown data).
When programming has finished, SR4 (when set) indicates a programming failure. If
SR3 is set, the device could not perform the WORD PROGRAMMING operation because
VPP was outside of its acceptable limits. If SR1 is set, the WORD PROGRAMMING opera-
tion attempted to program a locked block, causing the operation to abort.
Before issuing a new command, the status register contents should be examined and
then cleared using the CLEAR STATUS REGISTER command. Any valid command can
follow, when word programming has completed.
Buffered Programming (E8h, D0h)
The device features a 512-word buffer to enable optimum programming performance.
For buffered programming, data is first written to an on-chip write buffer. Then the buf-
fer data is programmed into the array in buffer-size increments. This can improve sys-
tem programming performance significantly over non-buffered programming.
When the BUFFERED PROGRAMMING SETUP command is issued, status register in-
formation is updated and reflects the availability of the buffer. SR7 indicates buffer
availability: if set, the buffer is available; if cleared, the buffer is not available.
Note: The device default state is to output SR data after the BUFFERED PROGRAM-
MING SETUP command. CE# and OE# LOW drive device to update status register. It is
not allowed to issue 70h to read SR data after E8h command; otherwise, 70h would be
counted as word count.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Program Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 34 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
On the next write, a word count is written to the device at the buffer address. This tells
the device how many data words will be written to the buffer, up to the maximum size
of the buffer.
On the next write, a device start address is given along with the first data to be written to
the flash memory array. Subsequent writes provide additional device addresses and da-
ta. All data addresses must lie within the start address plus the word count. Optimum
programming performance and lower power usage are obtained by aligning the starting
address at the beginning of a 512-word boundary (A[9:1] = 0x00 for Easy BGA and TSOP,
A[8:0] for QUAD+ package; see Part Numbering Information). The maximum buffer size
would be 256-word if the misaligned address range is crossing a 512-word boundary
during programming.
After the last data is written to the buffer, the BUFFERED PROGRAMMING CONFIRM
command must be issued to the original block address. The device begins to program
buffer contents to the array. If a command other than the BUFFERED PROGRAMMING
CONFIRM command is written to the device, a command sequence error occurs and
SR[7,5,4] are set. If an error occurs while writing to the array, the device stops program-
ming, and SR[7,4] are set, indicating a programming failure.
When buffered programming has completed, additional buffer writes can be initiated
by issuing another BUFFERED PROGRAMMING SETUP command and repeating the
buffered program sequence. Buffered programming may be performed with VPP = VPPL
or VPPH (see Operating Conditions for limitations when operating the device with VPP =
VPPH).
If an attempt is made to program past an erase-block boundary using the BUFFERED
PROGRAM command, the device aborts the operation. This generates a command se-
quence error, and SR[5,4] are set.
If buffered programming is attempted while VPP is at or below VPPLK, SR[4,3] are set. If
any errors are detected that have set status register bits, the status register should be
cleared using the CLEAR STATUS REGISTER command.
Buffered Enhanced Factory Programming (80h, D0h)
Buffered enhanced factory programming (BEFP) speeds up multilevel cell (MLC) pro-
gramming. The enhanced programming algorithm used in BEFP eliminates traditional
programming elements that drive up overhead in device programmer systems.
BEFP consists of three phases: setup, program/verify, and exit (see the BEFP Flowchart).
It uses a write buffer to spread MLC program performance across 512 data words. Verifi-
cation occurs in the same phase as programming to accurately program the cell to the
correct bit state.
A single two-cycle command sequence programs the entire block of data. This en-
hancement eliminates three write cycles per buffer: two commands and the word count
for each set of 512 data words. Host programmer bus cycles fill the device write buffer
followed by a status check. SR0 indicates when data from the buffer has been program-
med into sequential array locations.
Following the buffer-to-flash array programming sequence, the device increments in-
ternal addressing to automatically select the next 512-word array boundary. This aspect
of BEFP saves host programming equipment the address bus setup overhead.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Program Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 35 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
With adequate continuity testing, programming equipment can rely on the device’s in-
ternal verification to ensure that the device has programmed properly. This eliminates
the external post-program verification and its associated overhead.
Table 14: BEFP Requirements
Parameter/Issue Requirement Notes
Case temperature TC = 30°C ± 10°C
VCC Nominal VCC
VPP Driven to VPPH
Setup and confirm Target block must be unlocked before issuing the BEFP Setup and Confirm commands.
Programming The first-word address (WA0) of the block to be programmed must be held constant
from the setup phase through all data streaming into the target block, until transition
to the exit phase is desired.
Buffer alignment WA0 must align with the start of an array buffer boundary. 1
Note: 1. Word buffer boundaries in the array are determined by the lowest 9 address bits (0x000
through 0x1FF). The alignment start point is 0x000.
Table 15: BEFP Considerations
Parameter/Issue Requirement Notes
Cycling For optimum performance, cycling must be limited below 50 ERASE cycles per block. 1
Programming blocks BEFP programs one block at a time; all buffer data must fall within a single block. 2
Suspend BEFP cannot be suspended.
Programming the ar-
ray
Programming to the array can occur only when the buffer is full. 3
Notes: 1. Some degradation in performance may occur if this limit is exceeded, but the internal
algorithm continues to work properly.
2. If the internal address counter increments beyond the block's maximum address, ad-
dressing wraps around to the beginning of the block.
3. If the number of words is less than 512, remaining locations must be filled with 0xFFFF.
BEFP Setup Phase: After receiving the BEFP SETUP and CONFIRM command se-
quence, SR7 (ready) is cleared, indicating that the device is busy with BEFP algorithm
startup. A delay before checking SR7 is required to allow the device enough time to per-
form all of its setups and checks (block lock status, VPP level, etc.). If an error is detected,
SR4 is set and BEFP operation terminates. If the block was found to be locked, SR1 is
also set. SR3 is set if the error occurred due to an incorrect VPP level.
Note: Reading from the device after the BEFP SETUP and CONFIRM command se-
quence outputs status register data. Do not issue the READ STATUS REGISTER com-
mand; it will be interpreted as data to be loaded into the buffer.
BEFP Program/Verify Phase: After the BEFP setup phase has completed, the host pro-
gramming system must check SR[7,0] to determine the availability of the write buffer
for data streaming. SR7 cleared indicates the device is busy and the BEFP program/veri-
fy phase is activated. SR0 indicates the write buffer is available.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Program Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 36 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Two basic sequences repeat in this phase: loading of the write buffer, followed by buffer
data programming to the array. For BEFP, the count value for buffer loading is always
the maximum buffer size of 512 words. During the buffer-loading sequence, data is stor-
ed to sequential buffer locations starting at address 0x00. Programming of the buffer
contents to the array starts as soon as the buffer is full. If the number of words is less
than 512, the remaining buffer locations must be filled with 0xFFFF.
Note: The buffer must be completely filled for programming to occur. Supplying an ad-
dress outside of the current block's range during a buffer-fill sequence causes the algo-
rithm to exit immediately. Any data previously loaded into the buffer during the fill cy-
cle is not programmed into the array.
The starting address for data entry must be buffer size aligned; if not, the BEFP algo-
rithm will be aborted, the program fails, and the (SR4) flag will be set.
Data words from the write buffer are directed to sequential memory locations in the ar-
ray; programming continues from where the previous buffer sequence ended. The host
programming system must poll SR0 to determine when the buffer program sequence
completes. SR0 cleared indicates that all buffer data has been transferred to the array;
SR0 set indicates that the buffer is not available yet for the next fill cycle. The host sys-
tem may check full status for errors at any time, but it is only necessary on a block basis
after BEFP exit. After the buffer fill cycle, no WRITE cycles should be issued to the de-
vice until SR0 = 0 and the device is ready for the next buffer fill.
Note: Any spurious writes are ignored after a BUFFER FILL operation and when internal
program is proceeding.
The host programming system continues the BEFP algorithm by providing the next
group of data words to be written to the buffer. Alternatively, it can terminate this phase
by changing the block address to one outside of the current block’s range.
The program/verify phase concludes when the programmer writes to a different block
address; data supplied must be 0xFFFF. Upon program/verify phase completion, the de-
vice enters the BEFP exit phase.
Program Suspend
Issuing the PROGRAM SUSPEND command while programming suspends the pro-
gramming operation. This allows data to be accessed from the device other than the
one being programmed. The PROGRAM SUSPEND command can be issued to any de-
vice address. A PROGRAM operation can be suspended to perform reads only. Addition-
ally, a PROGRAM operation that is running during an erase suspend can be suspended
to perform a READ operation.
When a programming operation is executing, issuing the PROGRAM SUSPEND com-
mand requests the device to suspend the programming algorithm at predetermined
points. The device continues to output status register data after the PROGRAM SUS-
PEND command is issued. Programming is suspended when SR[7,2] are set.
To read data from the device, the READ ARRAY command must be issued. READ ARRAY,
READ STATUS REGISTER, READ DEVICE IDENTIFIER, READ CFI, and PROGRAM RE-
SUME valid commands during a program suspend.
During a program suspend, de-asserting CE# places the device in standby, reducing ac-
tive current. VPP must remain at its programming level, and WP# must remain un-
changed while in program suspend. If RST# is asserted, the device is reset.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Program Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 37 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Program Resume
The RESUME command instructs the device to continue programming, and automati-
cally clears SR[7,2]. This command can be written to any address. If error bits are set,
the status register should be cleared before issuing the next command. RST# must re-
main de-asserted.
Program Protection
When VPP = VIL, absolute hardware write protection is provided for all device blocks. If
VPP is at or below VPPLK, programming operations halt and SR3 is set, indicating a VPP-
level error. Block lock registers are not affected by the voltage level on VPP; they may still
be programmed and read, even if VPP is less than VPPLK.
Figure 11: Example VPP Supply Connections
VCC
VPP
VCC
VPP
10K Ω
<
-Factory programming with VPP
= VPPH
-Complete with program/erase
protection when V <
PP VPPLK
VCC VCC
VPP
-Low voltage programming only
-Full device protection unavailable
-Low voltage programming only
-Logic control of device protection
VCC
PROT#
VCC
VPP
-Low voltage and factory programming
VCC
VPP
VCC
VPP
VPPH
=
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Program Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 38 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Erase Operations
BLOCK ERASE Command
ERASE operations are performed on a block basis. An entire block is erased each time a
BLOCK ERASE command sequence is issued, and only one block is erased at a time.
When a block is erased, each bit within that block reads as a logical 1.
A BLOCK ERASE operation is initiated by writing the BLOCK ERASE SETUP command
to the address of the block to be erased, followed by the BLOCK ERASE CONFIRM com-
mand. If the device is placed in standby (CE# de-asserted) during a BLOCK ERASE oper-
ation, the device completes the operation before entering standby. The VPP value must
be above VPPLK and the block must be unlocked.
During a BLOCK ERASE operation, the device executes a sequence of internally-timed
events that conditions, erases, and verifies all bits within the block. Erasing the array
changes the value in each cell from a 1 to a 0. Memory block array cells that with a value
of 1 can be changed to 0 only by programming the block.
The status register can be examined for block erase progress and errors by reading any
address. The device remains in the read status register state until another command is
written. SR0 indicates whether the addressed block is erasing. SR7 is set upon erase
completion.
SR7 indicates block erase status while the sequence executes. When the BLOCK ERASE
operation has completed, SR5 = 1 (set) indicates an erase failure. SR3 = 1 indicates that
the device could not perform the BLOCK ERASE operation because VPP was outside of
its acceptable limits. SR1 = 1 indicates that the BLOCK ERASE operation attempted to
erase a locked block, causing the operation to abort.
Before issuing a new command, the status register contents should be examined and
then cleared using the CLEAR STATUS REGISTER command. Any valid command can
follow after the BLOCK ERASE operation has completed.
The BLOCK ERASE operation is aborted by performing a reset or powering down the
device. In either case, data integrity cannot be ensured, and it is recommended to erase
again the blocks aborted.
BLANK CHECK Command
The BLANK CHECK operation determines whether a specified main block is blank; that
is, completely erased. Other than a BLANK CHECK operation, only a BLOCK ERASE op-
eration can ensure a block is completely erased. BLANK CHECK is especially useful
when a BLOCK ERASE operation is interrupted by a power loss event.
A BLANK CHECK operation can apply to only one block at a time. The only operation
allowed simultaneously is a READ STATUS REGISTER operation. SUSPEND and RE-
SUME operations and a BLANK CHECK operation are mutually exclusive.
A BLANK CHECK operation is initiated by writing the BLANK CHECK SETUP command
to the block address, followed by the CHECK CONFIRM command. When a successful
command sequence is entered, the device automatically enters the read status state.
The device then reads the entire specified block and determines whether any bit in the
block is programmed or over-erased.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Erase Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 39 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
BLANK CHECK operation progress and errors are determined by reading the status reg-
ister at any address within the block being accessed. SR7 = 0 is a BLANK CHECK busy
status. SR7 = 1 is a BLANK CHECK operation complete status. The status register should
be checked for any errors and then cleared. If the BLANK CHECK operation fails, mean-
ing the block is not completely erased, SR5 = 1. CE# or OE# toggle (during polling) up-
dates the status register.
The READ STATUS REGISTER command must always be followed by a CLEAR STATUS
REGISTER command. The device remains in status register mode until another com-
mand is written to the device. Any command can follow once the BLANK CHECK com-
mand is complete.
ERASE SUSPEND Command
The ERASE SUSPEND command suspends a BLOCK ERASE operation that is in pro-
gress, enabling access to data in memory locations other than the one being erased. The
ERASE SUSPEND command can be issued to any device address. A BLOCK ERASE oper-
ation can be suspended to perform a WORD or BUFFER PROGRAM operation, or a
READ operation within any block except the block that is erase suspended.
When a BLOCK ERASE operation is executing, issuing the ERASE SUSPEND command
requests the device to suspend the erase algorithm at predetermined points. The device
continues to output status register data after the ERASE SUSPEND command is issued.
Block erase is suspended when SR[7,6] are set.
To read data from the device (other than an erase-suspended block), the READ ARRAY
command must be issued. During erase suspend, a PROGRAM command can be issued
to any block other than the erase-suspended block. Block erase cannot resume until
program operations initiated during erase suspend complete. READ ARRAY, READ STA-
TUS REGISTER, READ DEVICE IDENTIFIER, READ CFI, and ERASE RESUME are valid
commands during erase suspend. Additionally, CLEAR STATUS REGISTER, PROGRAM,
PROGRAM SUSPEND, BLOCK LOCK, BLOCK UNLOCK, and BLOCK LOCK DOWN are
valid commands during an ERASE SUSPEND operation.
During an erase suspend, de-asserting CE# places the device in standby, reducing active
current. VPP must remain at a valid level, and WP# must remain unchanged while in
erase suspend. If RST# is asserted, the device is reset.
ERASE RESUME Command
The ERASE RESUME command instructs the device to continue erasing, and automati-
cally clears SR[7,6]. This command can be written to any address. If status register error
bits are set, the status register should be cleared before issuing the next instruction.
RST# must remain de-asserted.
Erase Protection
When VPP = VIL, absolute hardware erase protection is provided for all device blocks. If
VPP is at or below VPPLK, ERASE operations halt and SR3 is set indicating a VPP-level er-
ror.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Erase Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 40 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Security Operations
Block Locking
Individual instant block locking is used to protect user code and/or data within the
flash memory array. All blocks power-up in a locked state to protect array data from be-
ing altered during power transitions. Any block can be locked or unlocked with no la-
tency. Locked blocks cannot be programmed or erased; they can only be read.
Software-controlled security is implemented using the BLOCK LOCK and BLOCK UN-
LOCK commands. Hardware-controlled security can be implemented using the BLOCK
LOCK DOWN command along with asserting WP#. Also, V PP data security can be used
to inhibit PROGRAM and ERASE operations.
BLOCK LOCK Command
To lock a block, issue the BLOCK LOCK SETUP command, followed by the BLOCK LOCK
command issued to the desired block’s address. If the SET READ CONFIGURATION
REGISTER command is issued after the BLOCK LOCK SETUP command, the device
configures the RCR instead.
BLOCK LOCK and UNLOCK operations are not affected by the voltage level on VPP. The
block lock bits may be modified and/or read even if VPP is at or below VPPLK.
BLOCK UNLOCK Command
The BLOCK UNLOCK command is used to unlock blocks. Unlocked blocks can be read,
programmed, and erased. Unlocked blocks return to a locked state when the device is
reset or powered down. If a block is in a lock-down state, WP# must be de-asserted be-
fore it can be unlocked.
BLOCK LOCK DOWN Command
A locked or unlocked block can be locked-down by writing the BLOCK LOCK DOWN
command sequence. Blocks in a lock-down state cannot be programmed or erased;
they can only be read. However, unlike locked blocks, their locked state cannot be
changed by software commands alone. A locked-down block can only be unlocked by
issuing the BLOCK UNLOCK command with WP# de-asserted. To return an unlocked
block to locked-down state, a BLOCK LOCK DOWN command must be issued prior to
changing WP# to V IL. Locked-down blocks revert to the locked state upon reset or power
up the device.
Block Lock Status
The READ DEVICE IDENTIFIER command is used to determine a block’s lock status.
DQ[1:0] display the addressed block’s lock status; DQ0 is the addressed block’s lock bit,
while DQ1 is the addressed block’s lock-down bit.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Security Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 41 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 12: Block Locking State Diagram
[000]
Program/Erase Allowed
WP# = VIL = 0 WP# = VIL = 0
Program/Erase Prevented
(Virtual lock-down)
Program/Erase Prevented
WP# = VIH = 1
[110]
[100]
[001]
[011]
[111]
[101]
[010] (Locked down)
2Fh
2Fh
2Fh
2Fh
01hD0h
01h/2Fh
01hD0h
D0h
D0h, 01h, or 2Fh
(Power-up/
Reset default)
(Lock down
disabled,
WP# = VIH)
(Power-up/
Reset default)
WP# toggle
WP# toggle
Program/Erase Allowed
WP# = VIH = 1
Note: 1. D0h = UNLOCK command; 01h = LOCK command; 60h (not shown) LOCK SETUP com-
mand; 2Fh = LOCK DOWN command.
Block Locking During Suspend
Block lock and unlock changes can be performed during an erase suspend. To change
block locking during an ERASE operation, first issue the ERASE SUSPEND command.
Monitor the status register until SR7 and SR6 are set, indicating the device is suspended
and ready to accept another command.
Next, write the desired lock command sequence to a block, which changes the lock
state of that block. After completing BLOCK LOCK or BLOCK UNLOCK operations, re-
sume the ERASE operation using the ERASE RESUME command.
Note:
A BLOCK LOCK SETUP command followed by any command other than BLOCK
LOCK, BLOCK UNLOCK, or BLOCK LOCK DOWN produces a command se-
quence error and set SR4 and SR5. If a command sequence error occurs during
an erase suspend, SR4 and SR5 remains set, even after the erase operation is re-
sumed. Unless the Status Register is cleared using the CLEAR STATUS REGISTER
command before resuming the ERASE operation, possible erase errors may be
masked by the command sequence error.
If a block is locked or locked-down during an erase suspend of the same block,
the lock status bits change immediately. However, the ERASE operation com-
pletes when it is resumed. BLOCK LOCK operations cannot occur during a pro-
gram suspend.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Security Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 42 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Selectable OTP Blocks
The OTP security feature on the device is backward-compatible to the earlier genera-
tion devices. Contact your local Micron representative for details about its implementa-
tion.
Password Access
The password access is a security enhancement offered on the device. This feature pro-
tects information stored in array blocks by preventing content alteration or reads until a
valid 64-bit password is received. The password access may be combined with nonvola-
tile protection and/or volatile protection to create a multi-tiered solution.
Contact your Micron sales office for further details concerning password access.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Security Operations
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Status Register
Read Status Register
To read the status register, issue the READ STATUS REGISTER command at any address.
Status register information is available at the address that the READ STATUS REGISTER,
WORD PROGRAM, or BLOCK ERASE command is issued to. Status register data is auto-
matically made available following a word program, block erase, or block lock com-
mand sequence. Reads from the device after any of these command sequences will out-
put the devices status until another valid command is written (e.g. READ ARRAY com-
mand).
The status register is read using single asynchronous mode or synchronous burst mode
reads. Status register data is output on DQ[7:0], while 0x00 is output on DQ[15:8]. In
asynchronous mode, the falling edge of OE# or CE# (whichever occurs first) updates
and latches the status register contents. However, when reading the status register in
synchronous burst mode, CE# or ADV# must be toggled to update status data.
The device write status bit (SR7) provides the overall status of the device. SR[6:1]
present status and error information about the PROGRAM, ERASE, SUSPEND, VPP, and
BLOCK LOCK operations.
Note: Reading the status register is a nonarray READ operation. When the operation oc-
curs in asynchronous page mode, only the first data is valid and all subsequent data are
undefined. When the operation occurs in synchronous burst mode, the same data word
requested will be output on successive clock edges until the burst length requirements
are satisfied.
Table 16: Status Register Description
Notes apply to entire table
Bits Name Bit Settings Description
7 Device write status
(DWS)
0 = Busy
1 = Ready
Status bit: Indicates whether a PROGRAM or
ERASE command cycle is in progress.
6 Erase Suspend Status
(ESS)
0 = Not in effect
1 = In effect
Status bit: Indicates whether an ERASE operation
has been or is going to be suspended.
5:4 Erase/Blank check status
(ES)
Program status (PS)
00 = PROGRAM/ERASE successful
01 = PROGRAM error
10 = ERASE/BLANK CHECK error
11 = Command sequence error
Status/Error bit: Indicates whether an ERASE/
BLANK CHECK or PROGRAM operation was success-
ful. When an error is returned, the operation is
aborted.
3 VPP status (VPPS) 0 = Within limits
1 = Exceeded limits (VPP VPPLK)
Status bit: Indicates whether a PROGRAM/ERASE
operation is within acceptable voltage range limits.
2 Program suspend status
(PSS)
0 = Not in effect
1 = In effect
Status bit: Indicates whether a PROGRAM opera-
tion has been or is going to be suspended.
1 Block lock status (BLS) 0 = Not locked
1 = Locked (operation aborted)
Status bit: Indicates whether a block is locked
when a PROGRAM or ERASE operation is initiated.
0 BEFP status (BWS) 0 = BEFP complete
1 = BEFP in progress
Status bit: Indicates whether BEFP data has com-
pleted loading into the buffer.
Notes: 1. Default value = 0x80.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Status Register
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
2. Always clear the status register prior to resuming ERASE operations. This eliminates sta-
tus register ambiguity when issuing commands during ERASE SUSPEND. If a command
sequence error occurs during an ERASE SUSPEND, the status register contains the com-
mand sequence error status (SR[7,5,4] set). When the ERASE operation resumes and fin-
ishes, possible errors during the operation cannot be detected via the status register be-
cause it contains the previous error status.
3. When bits 5:4 indicate a PROGRAM/ERASE operation error, either a CLEAR STATUS REG-
ISTER 50h) or a RESET command must be issued with a 15µs delay.
Clear Status Register
The CLEAR STATUS REGISTER command clears the status register. It functions inde-
pendently of VPP. The device sets and clears SR[7,6,2], but it sets bits SR[5:3,1] without
clearing them. The status register should be cleared before starting a command se-
quence to avoid any ambiguity. A device reset also clears the status register.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Status Register
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Configuration Register
Read Configuration Register
The read configuration register (RCR) is a 16-bit read/write register used to select bus
read mode (synchronous or asynchronous) and to configure device synchronous burst
read characteristics. To modify RCR settings, use the CONFIGURE READ CONFIGURA-
TION REGISTER command. RCR contents can be examined using the READ DEVICE
IDENTIFIER command and then reading from offset 0x05. On power-up or exit from re-
set, the RCR defaults to asynchronous mode. RCR bits are described in more detail be-
low.
Note: Reading the configuration register is a nonarray READ operation. When the oper-
ation occurs in asynchronous page mode, only the first data is valid, and all subsequent
data are undefined. When the operation occurs in synchronous burst mode, the same
word of data requested will be output on successive clock edges until the burst length
requirements are satisfied.
Table 17: Read Configuration Register
Bits Name Settings/Description
15 Read mode (RM) 0 = Synchronous burst mode read
1 = Asynchronous page mode read (default)
14:11 Latency count
(LC[3:0])
0000 = Code 0 (reserved)
0001 = Code 1 (reserved)
0010 = Code 2
0011 = Code 3
0100 = Code 4
0101 = Code 5
0110 = Code 6
0111 = Code 7
1000 = Code 8
1001 = Code 9
1010 = Code 10
1011 = Code11
1100 = Code 12
1101 = Code 13
1110 = Code 14
1111 = Code 15 (default)
10 WAIT polarity (WP) 0 = WAIT signal is active LOW (default)
1 = WAIT signal is active HIGH
9 Reserved (R) Default 0, Nonchangeable
8 WAIT delay (WD) 0 = WAIT de-asserted with valid data
1 = WAIT de-asserted one data cycle before valid data (default)
7 Burst sequence (BS) Default 0, Nonchangeable
6 Clock edge (CE) 0 = Falling edge
1 = Rising edge (default)
5:4 Reserved (R) Default 0, Nonchangeable
3 Burst wrap (BW) 0 = Wrap; Burst accesses wrap within burst length set by BL[2:0]
1 = No Wrap; Burst accesses do not wrap within burst length (default)
2:0 Burst length (BL[2:0]) 001 = 4-word burst
010 = 8-word burst
011 = 16-word burst
111 = Continuous burst (default)
(Other bit settings are reserved)
Read Mode
The read mode (RM) bit selects synchronous burst mode or asynchronous page mode
operation for the device. When the RM bit is set, asynchronous page mode is selected
(default). When RM is cleared, synchronous burst mode is selected.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Configuration Register
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Latency Count
The latency count (LC) bits tell the device how many clock cycles must elapse from the
rising edge of ADV# (or from the first valid clock edge after ADV# is asserted) until the
first valid data word is driven to DQ[15:0]. The input clock frequency is used to deter-
mine this value. The First Access Latency Count figure shows the data output latency for
different LC settings.
Figure 13: First Access Latency Count
Code 1
(Reserved )
Code 6
Code 5
Code 4
Code 3
Code 2
Code 0 (Reserved )
Code 7
Valid
Address
Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output
Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output
Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output
Valid
Output Valid
Output Valid
Output Valid
Output Valid
Output
Valid
Output Valid
Output Valid
Output Valid
Output
Valid
Output Valid
Output Valid
Output
Valid
Output Valid
Output
Valid
Output
Address [A]
ADV# [V]
DQ[15:0] [D/Q]
DQ[15:0] [D/Q]
DQ[15:0] [D/Q]
DQ[15:0] [D/Q]
DQ[15:0] [D/Q]
DQ[15:0] [D/Q]
DQ[15:0] [D/Q]
DQ[15:0] [D/Q]
CLK [C]
Note: 1. First Access Latency Count Calculation:
1 / CLK frequency = CLK period (ns)
n x (CLK period) tAVQV (ns) – tCHQV (ns)
Latency Count = n
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Configuration Register
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 14: Example Latency Count Setting Using Code 3
CLK
CE#
ADV#
A[MAX:1]
D[15:0]
tData
01 2 34
High-Z
Code 3
Address
R103
Data
End of Wordline Considerations
End of wordline (EOWL) wait states can result when the starting address of the burst op-
eration is not aligned to a 16-word boundary; that is, A[4:1] of the start address does not
equal 0x0. The figure below illustrates the end of wordline wait state(s) that occur after
the first 16-word boundary is reached. The number of data words and wait states is
summarized in the table below.
Figure 15: End of Wordline Timing Diagram
CLK
ADV#
EOWL
Data
OE#
WAIT#
A[MAX:1]
DQ[15:0]
Latency Count
Data Data
Address
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Configuration Register
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 18: End of Wordline Data and WAIT State Comparison
Latency Count
130nm 65nm
Data Words WAIT States Data Words WAIT States
1 Not Supported Not Supported Not Supported Not Supported
2 4 0 to 1 16 0 to 1
3 4 0 to 2 16 0 to 2
4 4 0 to 3 16 0 to 3
5 4 0 to 4 16 0 to 4
6 4 0 to 5 16 0 to 5
7 4 0 to 6 16 0 to 6
8 Not Supported Not Supported 16 0 to 7
9 16 0 to 8
10 16 0 to 9
11 16 0 to 10
12 16 0 to 11
13 16 0 to 12
14 16 0 to 13
15 16 0 to 14
WAIT Signal Polarity and Functionality
The WAIT polarity (WP) bit, RCR10 determines the asserted level (VOH or VOL) of WAIT.
When WP is set, WAIT is asserted HIGH (default). When WP is cleared, WAIT is asserted
LOW. The WAIT signal changes state on valid clock edges during active bus cycles (CE#
asserted, OE# asserted, RST# de-asserted).
The WAIT signal indicates data valid when the device is operating in synchronous mode
(RCR15 = 0). The WAIT signal is only de-asserted when data is valid on the bus. When
the device is operating in synchronous nonarray read mode, such as read status, read
ID, or read CFI, the WAIT signal is also de-asserted when data is valid on the bus. WAIT
behavior during synchronous nonarray reads at the end of wordline works correctly on-
ly on the first data access. When the device is operating in asynchronous page mode,
asynchronous single word read mode, and all write operations, WAIT is set to a de-as-
serted state as determined by RCR10.
Table 19: WAIT Functionality Table
Condition WAIT Notes
CE# = 1, OE# = X or CE# = 0, OE# = 1 High-Z 1
CE# = 0, OE# = 0 Active 1
Synchronous Array Reads Active 1
Synchronous Nonarray Reads Active 1
All Asynchronous Reads De-asserted 1
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Configuration Register
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 19: WAIT Functionality Table (Continued)
Condition WAIT Notes
All Writes High-Z 1, 2
Notes: 1. Active means that WAIT is asserted until data becomes valid, then deasserts.
2. When OE# = VIH during writes, WAIT = High-Z.
WAIT Delay
The WAIT delay (WD) bit controls the WAIT assertion delay behavior during synchro-
nous burst reads. WAIT can be asserted either during or one data cycle before valid data
is output on DQ[15:0]. When WD is set, WAIT is de-asserted one data cycle before valid
data (default). When WD is cleared, WAIT is de-asserted during valid data.
Burst Sequence
The burst sequence (BS) bit selects linear burst sequence (default). Only linear burst se-
quence is supported. The synchronous burst sequence for all burst lengths, as well as
the effect of the burst wrap (BW) setting are shown below.
Table 20: Burst Sequence Word Ordering
Start
Address
(DEC)
Burst
Wrap
(RCR3)
Burst Addressing Sequence (DEC)
4-Word Burst
(BL[2:0] =
0b001)
8-Word Burst
(BL[2:0] = 0b010)
16-Word Burst
(BL[2:0] = 0b011)
Continuous Burst
(BL[2:0] = 0b111)
0 0 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4…14-15 0-1-2-3-4-5-6-…
1 0 1-2-3-0 1-2-3-4-5-6-7-0 1-2-3-4-5…15-0 1-2-3-4-5-6-7-…
2 0 2-3-0-1 2-3-4-5-6-7-0-1 2-3-4-5-6…15-0-1 2-3-4-5-6-7-8-…
3 0 3-0-1-2 3-4-5-6-7-0-1-2 3-4-5-6-7…15-0-1-2 3-4-5-6-7-8-9-…
4 0 4-5-6-7-0-1-2-3 4-5-6-7-8…15-0-1-2-3 4-5-6-7-8-9-10…
5 0 5-6-7-0-1-2-3-4 5-6-7-8-9…15-0-1-2-3-4 5-6-7-8-9-10-11…
6 0 6-7-0-1-2-3-4-5 6-7-8-9-10…15-0-1-2-3-4-5 6-7-8-9-10-11-12-…
7 0 7-0-1-2-3-4-5-6 7-8-9-10…15-0-1-2-3-4-5-6 7-8-9-10-11-12-13…
14 0 14-15-0-1-2…12-13 14-15-16-17-18-19-20-…
15 0 15-0-1-2-3…13-14 15-16-17-18-19-20-21-…
0 1 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4…14-15 0-1-2-3-4-5-6-…
1 1 1-2-3-4 1-2-3-4-5-6-7-8 1-2-3-4-5…15-16 1-2-3-4-5-6-7-…
2 1 2-3-4-5 2-3-4-5-6-7-8-9 2-3-4-5-6…16-17 2-3-4-5-6-7-8-…
3 1 3-4-5-6 3-4-5-6-7-8-9-10 3-4-5-6-7…17-18 3-4-5-6-7-8-9-…
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Configuration Register
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 50 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 20: Burst Sequence Word Ordering (Continued)
Start
Address
(DEC)
Burst
Wrap
(RCR3)
Burst Addressing Sequence (DEC)
4-Word Burst
(BL[2:0] =
0b001)
8-Word Burst
(BL[2:0] = 0b010)
16-Word Burst
(BL[2:0] = 0b011)
Continuous Burst
(BL[2:0] = 0b111)
4 1 4-5-6-7-8-9-10-11 4-5-6-7-8…18-19 4-5-6-7-8-9-10…
5 1 5-6-7-8-9-10-11-12 5-6-7-8-9…19-20 5-6-7-8-9-10-11…
6 1 6-7-8-9-10-11-12-13 6-7-8-9-10…20-21 6-7-8-9-10-11-12-…
7 1 7-8-9-10-11-12-13-14 7-8-9-10-11…21-22 7-8-9-10-11-12-13…
14 1 14-15-16-17-18…28-29 14-15-16-17-18-19-20-…
15 1 15-16-17-18-19…29-30 15-16-17-18-19-20-21-…
Clock Edge
The clock edge (CE) bit selects either a rising (default) or falling clock edge for CLK. This
clock edge is used at the start of a burst cycle to output synchronous data and to
assert/de-assert WAIT.
Burst Wrap
The burst wrap (BW) bit determines whether 4-word, 8-word, or 16-word burst length
accesses wrap within the selected word length boundaries or cross word length boun-
daries. When BW is set, burst wrapping does not occur (default). When BW is cleared,
burst wrapping occurs.
When performing synchronous burst reads with BW set (no wrap), an output delay may
occur when the burst sequence crosses its first device row (16-word) boundary. If the
burst sequence’s start address is 4-word aligned, then no delay occurs. If the start ad-
dress is at the end of a 4-word boundary, the worst-case output delay is one clock cycle
less than the first access latency count. This delay can take place only once and doesn’t
occur if the burst sequence does not cross a device row boundary. WAIT informs the
system of this delay when it occurs.
Burst Length
The burst length bits (BL[2:0]) select the linear burst length for all synchronous burst
reads of the flash memory array. The burst lengths are 4-word, 8-word, 16-word, or con-
tinuous.
Continuous burst accesses are linear only and do not wrap within any word length
boundaries. When a burst cycle begins, the device outputs synchronous burst data until
it reaches the end of the “burstable” address space.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Configuration Register
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
One-Time Programmable Registers
Read OTP Registers
The device contains 17 OTP registers that can be used to implement system security
measures and/or device identification. Each OTP register can be individually locked.
The first 128-bit OTP register is comprised of two 64-bit (8-word) segments. The lower
64-bit segment is preprogrammed at the Micron factory with a unique 64-bit number.
The upper 64-bit segment, as well as the other sixteen 128-bit OTP registers, are blank.
Users can program them as needed. Once programmed, users can also lock the OTP
register(s) to prevent additional bit programming (see the OTP Register Map figure be-
low).
The OTP registers contain OTP bits; when programmed, PR bits cannot be erased. Each
OTP register can be accessed multiple times to program individual bits, as long as the
register remains unlocked.
Each OTP register has an associated lock register bit. When a lock register bit is pro-
grammed, the associated OTP register can only be read; it can no longer be program-
med. Additionally, because the lock register bits themselves are OTP, when program-
med, they cannot be erased. Therefore, when an OTP register is locked, it cannot be un-
locked.
The OTP registers can be read from an OTP-RA address. To read the OTP register, a
READ DEVICE IDENTIFIER command is issued at an OTP-RA address to place the de-
vice in the read device identifier state. Next, a READ operation is performed using the
address offset corresponding to the register to be read. The Device Identifier Informa-
tion table shows the address offsets of the OTP registers and lock registers. PR data is
read 16 bits at a time.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
One-Time Programmable Registers
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 52 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 16: OTP Register Map
0x89
Lock Register 1
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
0x102
0x109
0x8A
0x91
0x88
0x85
64-bit Segment
64-bit Segment
Lock Register 0
Register 0
128-bit OTP
Register 1
128-bit OTP
0x84
0x81
0x80 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Register 16
128-bit OTP
Factory Programed
User Programmable
User Programmable
User Programmable
Program OTP Registers
To program an OTP register, a PROGRAM OTP REGISTER command is issued at the pa-
rameter’s base address plus the offset of the desired OTP register location. Next, the de-
sired OTP register data is written to the same OTP register address.
The device programs the 64-bit and 128-bit user-programmable OTP register data 16
bits at a time. Issuing the PROGRAM OTP REGISTER command outside of the OTP reg-
ister’s address space causes a program error (SR4 set). Attempting to program a locked
OTP register causes a program error (SR4 set) and a lock error (SR1 set).
Lock OTP Registers
Each OTP register can be locked by programming its respective lock bit in the lock regis-
ter. The corresponding bit in the lock register is programmed by issuing the PROGRAM
LOCK REGISTER command, followed by the desired lock register data. The physical ad-
dresses of the lock registers are 0x80 for register 0 and 0x89 for register 1; these address-
es are used when programming the lock registers.
Bit 0 of lock register 0 is programmed during the manufacturing process, locking the
lower-half segment of the first 128-bit OTP register. Bit 1 of lock register 0, which corre-
sponds to the upper-half segment of the first 128-bit OTP register, can be programmed
by the user . When programming bit 1 of lock register 0, all other bits need to be left as 1
such that the data programmed is 0xFFFD.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
One-Time Programmable Registers
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Lock register 1 controls the the upper sixteen 128-bit OTP registers. Each bit of lock reg-
ister 1 corresponds to a specific 128-bit OTP register. Programming a bit in lock register
1 locks the corresponding 128-bit OTP register; e.g., programming LR1.0 locks the corre-
sponding OTP register 1.
Note: Once locked, the OTP registers cannot be unlocked.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
One-Time Programmable Registers
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Common Flash Interface
The CFI is part of an overall specification for multiple command-set and control-inter-
face descriptions. System software can parse the CFI database structure to obtain infor-
mation about the device, such as block size, density, bus width, and electrical specifica-
tions. The system software determines which command set to use to properly perform a
WRITE command, a BLOCK ERASE or READ command, and to otherwise control the
device. Information in the CFI database can be viewed by issuing the READ CFI com-
mand.
READ CFI Structure Output
The READ CFI command obtains CFI database structure information and always out-
puts it on the lower byte, DQ[7:0], for a word-wide (x16) device. This CFI-compliant de-
vice always outputs 00h data on the upper byte (DQ[15:8]).
The numerical offset value is the address relative to the maximum bus width the device
supports. For this device family, the starting address is a 10h, which is a word address
for x16 devices. For example, at this starting address of 10h, a READ CFI command out-
puts an ASCII Q in the lower byte and 00h in the higher byte as shown here.
In all the CFI tables shown here, address and data are represented in hexadecimal nota-
tion. In addition, because the upper byte of word-wide devices is always 00h, as shown
in the example here, the leading 00 has been dropped and only the lower byte value is
shown. Following is a table showing the CFI output for a x16 device, beginning at ad-
dress 10h and a table showing an overview of the CFI database sections with their ad-
dresses.
Table 21: Example of CFI Output (x16 device) as a Function of Device and Mode
Device
Hex
Offset
Hex
Code
ASCII Value
(DQ[15:8])
ASCII Value
(DQ[7:0])
Address 00010: 51 00 Q
00011: 52 00 R
00012: 59 00 Y
00013: P_IDLO 00 Primary vendor ID
00014: P_IDHI 00
00015: PLO 00 Primary vendor table address
00016: PHI 00
00017: A_IDLO 00 Alternate vendor ID
00018: A_IDHI 00
:
:
:
:
:
:
:
:
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 22: CFI Database: Addresses and Sections
Address Section Name Description
00001:Fh Reserved Reserved for vendor-specific information
00010h CFI ID string Flash device command set ID (identification) and vendor da-
ta offset
0001Bh System interface information Flash device timing and voltage
00027h Device geometry definition Flash device layout
P Primary Micron-specific extended query Vendor-defined informaton specific to the primary vendor
algorithm (offset 15 defines P which points to the primary
Micron-specific extended query table.)
Table 23: CFI ID String
Hex
Offset Length Description Address
Hex
Code
ASCII Value
(DQ[7:0])
10h 3 Query unique ASCII string “QRY” 10: - -51 Q
11: - -52 R
12: - -59 Y
13h 2 Primary vendor command set and control
interface ID code. 16-bit ID code for ven-
dor-specified algorithms.
13: - -01 Primary vendor ID number
14: - -00
15h 2 Extended query table primary algorithm
address.
15: - -0A Primary vendor table ad-
dress, primary algorithm
16: - -01
17h 2 Alternate vendor command set and control
interface ID code. 0000h means no second
vendor-specified algorithm exists.
17: - -00 Alternate vendor ID number
18: - -00
19h 2 Secondary algorithm extended query table
address. 0000h means none exists.
19: - -00 Primary vendor table ad-
dress, secondary algorithm
1A: - -00
Note: 1. The CFI ID string provides verification that the device supports the CFI specification. It
also indicates the specification version and supported vendor-specific command sets.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 56 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 24: System Interface Information
Hex
Offset Length Description Address
Hex
Code
ASCII Value
(DQ[7:0])
1Bh 1 VCC logic supply minimum program/erase voltage.
bits 0 - 3 BCD 100 mV
bits 4 - 7 BCD volts
1Bh - -17 1.7V
1Ch 1 VCC logic supply maximum program/erase volt-
age.
bits 0 - 3 BCD 100 mV
bits 4 - 7 BCD volts
1Ch - -20 2.0V
1Dh 1 VPP [programming] supply minimum program/
erase voltage.
bits 0 - 3 BCD 100 mV
bits 4 - 7 hex volts
1Dh - -85 8.5V
1Eh 1 VPP [programming] supply maximum program/
erase voltage.
bits 0 - 3 BCD 100 mV
bits 4 - 7 hex volts
1Eh - -95 9.5V
1Fh 1 “n” such that typical single word program time-
out = 2n μs.
1Fh - -09 512µs
20h 1 “n” such that typical full buffer write timeout =
2n μs.
20h - -0A 1024µs
21h 1 “n” such that typical block erase timeout = 2n ms. 21h - -0A 1s
22h 1 “n” such that typical full chip erase timeout = 2n
ms.
22h - -00 NA
23h 1 “n” such that maximum word program timeout =
2n times typical.
23h - -01 1024µs
24h 1 “n” such that maximum buffer write timeout =
2n times typical.
24h - -02 4096µs
25h 1 “n” such that maximum block erase timeout = 2n
times typical.
25h - -02 4s
26h 1 “n” such that maximum chip erase timeout = 2n
times typical.
26h - -00 NA
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 57 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 25: Device Geometry
Hex
Offset Length Description Address
Hex
Code
ASCII Value
(DQ[7:0])
27h 1 n such that device size in bytes = 2n. 27: See Note 1
28h 2 Flash device interface code assignment: n such that n + 1
specifies the bit field that represents the flash device width
capabilities as described here:
bit 0: x8
bit 1: x16
bit 2: x32
bit 3: x64
bits 4 - 7: –
bits 8 - 15: –
28: - -01 x16
29: - -00
2Ah 2 n such that maximum number of bytes in write buffer = 2n. 2Ah - -0A 1024
2Bh - -00
2Ch 1 Number of erase block regions (x) within the device:
1) x = 0 means no erase blocking; the device erases in bulk.
2) x specifies the number of device regions with one or more
contiguous, same-size erase blocks.
3) Symmetrically blocked partitions have one blocking region.
2Ch See Note 1
2Dh 4 Erase block region 1 information:
bits 0 - 15 = y, y + 1 = number of identical-size erase blocks.
bits 16 - 31 = z, region erase block(s) size are z x 256 bytes.
2D:
2E:
2F:
30:
See Note 1
31h 4 Erase block region 2 information:
bits 0 - 15 = y, y + 1 = number of identical-size erase blocks.
bits 16 - 31 = z, region erase block(s) size are z x 256 bytes.
31:
32:
33:
34:
See Note 1
35h 4 Reserved for future erase block region information. 35:
36:
37:
38:
See Note 1
Note: 1. See Block Region Map Information table.
Table 26: Block Region Map Information
Address
256Mb
Address
256Mb
Bottom Top Bottom Top
27: --19 --19 30: --00 --02
28: --01 --01 31: --FE --03
29: --00 --00 32: --00 --00
2A: --0A --0A 33: --00 --80
2B: --00 --00 34: --02 --00
2C: --02 --02 35: --00 --00
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 58 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 26: Block Region Map Information (Continued)
Address
256Mb
Address
256Mb
Bottom Top Bottom Top
2D: --03 --FE 36: --00 --00
2E: --00 --00 37: --00 --00
2F: --80 --00 38: --00 --00
Table 27: Primary Vendor-Specific Extended Query
Hex Offset
P = 10Ah Length Description Address Hex Code
ASCII Value
(DQ[7:0])
(P+0)h
(P+1)h
(P+2)h
3 Primary extended query table, unique ASCII
string: PRI
10A: - -50 P
10B: - -52 R
10C: - -49 I
(P+3)h 1 Major version number, ASCII 10D: - -31 1
(P+4)h 1 Minor version number, ASCII 10E: - -34 4
(P+5)h
(P+6)h
(P+7)h
(P+8)h
4 Optional feature and command support (1 = yes;
0 = no)
Bits 11 - 29 are reserved; undefined bits are 0
If bit 31 = 1, then another 31-bit field of optional
features follows at the end of the bit 30 field.
10F: - -E6
110: - -01
111: - -00
112: See Note 1
Bit 0: Chip erase supported. bit 0 = 0 No
Bit 1: Suspend erase supported. bit 1 = 1 Yes
Bit 2: Suspend program supported. bit 2 = 1 Yes
Bit 3: Legacy lock/unlock supported. bit 3 = 0 No
Bit 4: Queued erase supported. bit 4 = 0 No
Bit 5: Instant individual block locking supported. bit 5 = 1 Yes
Bit 6: OTP bits supported. bit 6 = 1 Yes
Bit 7: Page mode read supported. bit 7 = 1 Yes
Bit 8: Synchronous read supported. bit 8 = 1 Yes
Bit 9: Simultaneous operations supported. bit 9 = 0 No
Bit 10: Extended Flash array block supported bit 10 = 0 No
Bit 11: Permanent block locking of up to full
main array supported
bit 11 = 0 No
Bit 12: Permanent block locking of up to partial
main array supported
bit 12 = 0 No
Bit 30: CFI links to follow: bit 30 = 0 See Note 1
Bit 31: Another optional features field to follow. bit 31 = 0
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 59 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 27: Primary Vendor-Specific Extended Query (Continued)
Hex Offset
P = 10Ah Length Description Address Hex Code
ASCII Value
(DQ[7:0])
(P+9)h 1 Supported functions after SUSPEND: READ AR-
RAY, STATUS, QUERY. Other supported options in-
clude:
Bits 1 - 7: Reserved; undefined bits are 0.
113: - -01
Bit 0: Program supported after ERASE SUSPEND. bit 0 = 1 Yes
(P+A)h
(P+B)h
2 Block Status Register mask:
Bits 2 - 15 are reserved; undefined bits are 0.
114: - -03
115: - -00
Bit 0: Block lock-bit status register active. bit 0 = 1 Yes
Bit 1: Block lock-down bit status active. bit 1 = 1 Yes
Bit 4: EFA block lock-bit status register active. bit 4 = 0 No
Bit 5: EFA block lock-bit status active. bit 5 = 0 No
(P+C)h 1 VCC logic supply highest performance program/
erase voltage.
bits 0 - 3 BCD 100 mV
bits 4 - 7 hex value in volts
116: - -18 1.8V
(P+D)h 1 VPP optimum program/erase voltage.
bits 0 - 3 BCD 100mV
bits 4 - 7 hex value in volts
117: - -90 9.0V
Note: 1. See Optional Features Fields table.
Table 28: Optional Features Field
Address
Discrete 512Mb
Bottom Top Bottom Top
die 1 (B) die 2 (T) die 1 (T) die 2 (B)
112: --00 --00 40: --00 --40 --00
Table 29: One Time Programmable (OTP) Space Information
Hex Offset
P = 10Ah Length Description Address
Hex
Code
ASCII Value
(DQ[7:0])
(P+E)h 1 Number of OTP block fields in JEDEC ID space.
00h indicates that 256 OTP fields are available.
118: - -02 2
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 60 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 29: One Time Programmable (OTP) Space Information (Continued)
Hex Offset
P = 10Ah Length Description Address
Hex
Code
ASCII Value
(DQ[7:0])
(P+F)h
(P+10)h
(P+11)h
(P+12)h
4
OTP Field 1: OTP Description:
This field describes user-available OTP bytes.
Some are preprogrammed with device-unique se-
rial numbers. Others are user-programmable.
Bits 0-15 point to the OTP Lock byte (the first
byte).
The following bytes are factory preprogrammed
and user-programmable:
Bits 0 - 7 = Lock/bytes JEDEC plane physical low
address.
Bits 8 - 15 = Lock/bytes JEDEC plane physical high
address.
Bits 16 - 23 = n where 2n equals factory preprog-
rammed bytes.
Bits 24 - 31 = n where 2n equals user-programma-
ble bytes.
119: - -80 80h
11A: - -00 00h
1B: - -03 8 byte
11C: - -03 8 byte
(P+13)h
(P+14)h
(P+15)h
(P+16)h
10 Protection field 2: protection description
Bits 0 - 31 point to the protection register physi-
cal lock word address in the JEDEC plane.
The bytes that follow are factory or user-progam-
mable.
11D: - -89 89h
11E: - -00 00h
11F: - -00 00h
120: - -00 00h
(P+17)h
(P+18)h
(P+19)h
Bits 32 - 39 = n where n equals factory program-
med groups (low byte).
Bits 40 - 47 = n where n equals factory program-
med groups (high byte).
Bits 48 - 55 = n where 2n equals factory program-
med bytes/groups.
121: - -00 0
122: - -00 0
123: - -00 0
(P+1A)h
(P+1B)h
(P+1C)h
Bits 56 - 63 = n where n equals user programmed
groups (low byte).
Bits 64 - 71 = n where n equals user programmed
groups (high byte).
Bits 72 - 79 = n where 2n equals user programma-
ble bytes/groups.
124: - -10 16
125: - -00 0
126: - -04 16
Table 30: Burst Read Information
Hex Offset
P = 10Ah Length Description Address
Hex
Code
ASCII Value
(DQ[7:0])
(P+1D)h
1 Page Mode Read capability:
Bits 7 - 0 = n where 2n hex value represents the
number of read-page bytes. See offset 28h for
device word width to determine page-mode data
output width. 00h indicates no read page buffer.
127: - -05 32 byte
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 61 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 30: Burst Read Information (Continued)
Hex Offset
P = 10Ah Length Description Address
Hex
Code
ASCII Value
(DQ[7:0])
(P+1E)h
1 Number of synchronous mode read configuration
fields that follow. 00h indicates no burst capabili-
ty.
128: - -04
4
(P+1F)h
1 Synchronous mode read capability configuration
1:
Bits 3 - 7 = Reserved.
Bits 0 - 2 = n where 2n+1 hex value represents the
maximum number of continuous synchronous
reads when the device is configured for its maxi-
mum word width.
A value of 07h indicates that the device is capa-
ble of continuous linear bursts that will output
data until the internal burst counter reaches the
end of the device’s burstable address space.
This fields’s 3-bit value can be written directly to
the Read Configuration Register bits 0 - 2 if the
device is configured for its maximum word width.
See offset 28h for word width to determine the
burst data output width.
129: - -01
4
(P+20)h 1 Synchronous mode read capability configuration
2.
12A: - -02 8
(P+21)h 1 Synchronous mode read capability configuration
3.
12B: - -03 16
(P+22) 1 Synchronous mode read capability configuration
4.
12C: - -07 Continued
Table 31: Partition and Block Erase Region Information
Hex Offset
P = 10Ah Description
Optional Flash features and commands Length
Address
Bottom Top Bottom Top
(P+23)h (P+23)h Number of device hardware-partition regions
within the device:
x = 0: a single hardware partition device (no
fields follow).
x specifies the number of device partition regions
containing one or more contiguous erase block
regions
1 12D: 12D:
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 32: Partition Region 1 Information: Top and Bottom Offset/Address
Hex Offset
P = 10Ah Description
Optional Flash features and commands Length
Address
Bottom Top Bottom Top
(P+24)h
(P+25)h
(P+24)h
(P+25)h
Data size of this Partition Region information field
(number of addressable locations, including this
field.
2 12E: 12E:
12F: 12F:
(P+26)h
(P+27)h
(P+26)h
(P+27)h
Number of identical partitions within the partition
region.
2 130: 130:
131: 131:
(P+28)h (P+28)h Number of program or erase operations allowed in a
partition:
Bits 0 - 3 = Number of simultaneous program opera-
tions.
Bits 4 - 7 = Number of simultaneous erase operations.
1 132: 132:
(P+29)h (P+29)h Simultaneous program or erase operations allowed
in other partitions while a partition in this region is
in program mode:
Bits 0 - 3 = Number of simultaneous program opera-
tions.
Bits 4 - 7 = Number of simultaneous erase operations.
1 133: 133:
(P+2A)h (P+2A)h Simultaneous program or erase operations allowed
in other partitions while a partition in this region is
in erase mode:
Bits 0 - 3 = Number of simultaneous program opera-
tions.
Bits 4 - 7 = Number of simultaneous erase operations.
1 134: 134:
(P+2B)h (P+2B)h Types of erase block regions in this partition region:
x=0: No erase blocking; the partition region erases in
bulk.
x = Number of erase block regions with contiguous,
same-size erase blocks.
Symmetrically blocked partitions have one blocking
region.
Partition size = (Type 1 blocks) x (Type 1 block sizes) +
(Type 2 blocks) x (Type 2 block sizes) +...+ (Type n
blocks) x (Type n block sizes).
1 135: 135:
Table 33: Partition Region 1 Information
Hex Offset
P = 10Ah
Bottom/Top
Description
Optional Flash features and commands Length
Address
Bottom/Top
(P+2C)h
(P+2D)h
(P+2E)h
(P+2F)h
Partition region 1 erase block type 1 information:
Bits 0-15 = y, y+1 = Number of identical-sized erase blocks in a
partition.
Bits 16-31 = z, where region erase block(s) size is z x 256 bytes.
4 136:
137:
138:
139:
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 33: Partition Region 1 Information (Continued)
Hex Offset
P = 10Ah
Bottom/Top
Description
Optional Flash features and commands Length
Address
Bottom/Top
(P+30)h
(P+31)h
Partition 1 (erase block type 1):
Minimum block erase cycles x 1000
2 13A:
13B:
(P+32)h Partition 1 (erase block type 1) bits per cell; internal ECC:
Bits 0 - 3 = bits per cell in erase region
Bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
Bit 5 - 7 = reserved for future use
1 13C:
(P+33)h Partition 1 (erase block type 1) page mode and synchronous
mode capabilities:
Bits 0 = page-mode host reads permitted (1=yes, 0=no)
Bit 1 = synchronous host reads permitted (1=yes, 0=no)
Bit 2 = synchronous host writes permitted (1=yes, 0=no)
Bit 3 - 7 = reserved for future use
1 13D:
(P+34)h
(P+35)h
(P+36)h
(P+37)h
(P+38)h
(P+39)h
Partition 1 (erase block type 1) programming region information:
Bits 0 - 7 = x, 2x: programming region aligned size (bytes)
Bit 8-14 = reserved for future use
Bit 15 = legacy flash operation; ignore 0:7
Bit 16 - 23 = y: control mode valid size (bytes)
Bit 24 - 31 = reserved for future use
Bit 32 - 39 = z: control mode invalid size (bytes)
Bit 40 - 46 = reserved for future use
Bit 47 = legacy flash operation (ignore 23:16 and 39:32)
6 13E:
13F:
140:
141:
142:
143:
(P+3A)h
(P+3B)h
(P+3C)h
(P+3D)h
Partition 1 erase block type 2 information:
Bits 0-15 = y, y+1 = Number of identical-size erase blocks in a par-
tition.
Bits 16 - 31 = z, where region erase block(s) size is z x 256 bytes.
(bottom parameter device only)
4 144:
145:
146:
147:
(P+3E)h
(P+3F)h
Partition 1 (erase block type 2)
Minimum block erase cycles x 1000
2 148:
149:
(P+40)h Partition 1 (erase block type 2) bits per cell, internal EDAC:
Bits 0 - 3 = bits per cell in erase region
Bit 4 = reserved for “internal ECC used” (1=yes, 0=no)
Bits 5 - 7 = reserved for future use
1 14A:
(P+41)h Partition 1 (erase block type 2) page mode and synchronous
mode capabilities:
Bit 0 = page-mode host reads permitted (1=yes, 0=no)
Bit 1 = synchronous host reads permitted (1=yes, 0=no)
Bit 2 = synchronous host writes permitted (1=yes, 0=no)
Bits 3-7 = reserved for future use
1 14B:
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 33: Partition Region 1 Information (Continued)
Hex Offset
P = 10Ah
Bottom/Top
Description
Optional Flash features and commands Length
Address
Bottom/Top
(P+42)h
(P+43)h
(P+44)h
(P+45)h
(P+46)h
(P+47)h
Partition 1 (erase block type 2) programming region information:
Bits 0-7 = x, 2nx = Programming region aligned size (bytes)
Bits 8-14 = reserved for future use
Bit 15 = legacy flash operation (ignore 0:7)
Bits 16 - 23 = y = Control mode valid size in bytes Bits 24 - 31 =
reserved
Bits 32 - 39 = z = Control mode invalid size in bytes
Bits 40 - 46 = reserved
Bit 47 = legacy flash operation (ignore 23:16 and 39:32)
6 14C:
14D:
14E:
14F:
150:
151:
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 34: Partition Region 1: Partition and Erase Block Map Information
Address
256Mb
Bottom Top
12D: - -01 - -01
12E: - -24 - -24
12F: - -00 - -00
130: - -01 - -01
131: - -00 - -00
132: - -11 - -11
133: - -00 - -00
134: - -00 - -00
135: - -02 - -02
136: - -03 - -FE
137: - -00 - -00
138: - -80 - -00
139: - -00 - -02
13A: - -64 - -64
13B: - -00 - -00
13C: - -02 - -02
13D: - -03 - -03
13E: - -00 - -00
13F: - -80 - -80
140: - -00 - -00
141: - -00 - -00
142: - -00 - -00
143: - -80 - -80
144: - -FE - -03
145: - -00 - -00
146: - -00 - -80
147: - -02 - -00
148: - -64 - -64
149: - -00 - -00
14A: - -02 - -02
14B: - -03 - -03
14C: - -00 - -00
14D: - -80 - -80
14E: - -00 - -00
14F: - -00 - -00
150: - -00 - -00
151: - -80 - -80
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 66 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 35: CFI Link Information
Offset
P = 10Ah Length Description Address
ASCII Value
(DQ[7:0])
CFI Link field bit definitions:
(P+48)h 4 Bits 0 - 9 = Address offset (within 32Mbit segment of refer-
enced CFI table)
152: See Note 1
(P+49)h Bits 10 - 27 = nth 32Mbit segment of referenced CFI table 153:
(P+4A)h Bits 28 - 30 = Memory Type 154:
(P+4B)h Bit 31 = Another CFI link field immediately follows 155:
(P+4C)h 1 CFI Link field quantity subfield definitions:
Bits 0 - 3 = Quantity field (n such that n+1 equals quantity)
Bit 4 = Table and die relative location
Bit 5 = Link field and table relative location
Bits 6 - 7 = Reserved
156:
Note: 1. See Additional CFI Link Field table.
Table 36: Additional CFI Link Field
Address
Discrete 512Mb
Bottom Top Bottom Top
die 1 (B) die 2 (T) die 1 (T) die 2 (B)
152: --FF --FF --10 --FF --10 --FF
153: --FF --FF --20 --FF --20 --FF
154: --FF --FF --00 --FF --00 --FF
155: --FF --FF --00 --FF --00 --FF
156: --FF --FF --10 --FF --10 --FF
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Common Flash Interface
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 67 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Flowcharts
Figure 17: Word Program Procedure
No
Progam
complete
D7 = 1?
Command Cycle
- Issue PROGRAM command
- Address = location to program
- Data = 0x40
Start
Program suspend
(See Suspend/Resume
Flowchart
Yes
Yes
Yes
No No
Suspend?
Data Cycle
- Address = location to program
- Data = data to program
Check Ready Status
- READ STATUS REGISTER command not required
- Perform READ operation
- Read ready status on signal D7
Errors?
Read Status Register
- Toggle CE# or OE# to update status register
- See Status Register Flowchart
Error-handler
user-defined routine
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Flowcharts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 18: Buffer Program Procedure
Yes
Device
ready? SR7 = 0/1
Set timeout or
loop counter
Start
Use single word
programming
Get next
target address
Read status register
SR7 = Valid
(at block address )
Timeout
or count expired?
Issue WRITE-to-BUFFER
command E8h
(at block address)
X = 0
Write confirm D0h
(at block address)
(at block address)
Read status register
Device
supports buffer
writes?
Write word count (N-1)
(at block address)
Write buffer data,
start address
Write buffer data,
(at block address)
within buffer range
X = X + 1
No
No
0 = No
No
Yes
Yes
No
Yes
1 = Yes
X = N
Abort
bufferred program
?
0
Full status
check (if desired)
1
SR7? Suspend
program
No
Another
buffered
programming
?
Program
complete
Write to another
block address
Suspend
program loop
Buffered program
aborted
Yes
1 = Ready
0 = Busy
N = 0 corresponds to
count = 1
CE# and OE# LOW
updates status register
No Yes
Notes: 1. Word count values on DQ0:DQ15 are loaded into the count register. Count ranges for
this device are N = 0000h to 01FFh.
2. Device outputs the status register when read.
3. Write buffer contents will be programmed at the device start or destination address.
4. Align the start address on a write buffer boundary for maximum programming perform-
ance; that is, A[9:1] of the start address = 0).
5. Device aborts the BUFFERED PROGRAM command if the current address is outside the
original block address.
6. Status register indicates an improper command sequence if the BUFFERED PROGRAM
command is aborted. Follow this with a CLEAR STATUS REGISTER command.
7. Device defaults to SR output data after BUFFERED PROGRAMMING SETUP command
(E8h) is issued . CE# or OE# must be toggled to update the status register . Don’t issue
the READ SR command (70h); it is interpreted by the device as buffer word count.
8. Full status check can be done after erase and write sequences complete. Write FFh after
the last operation to reset the device to read array mode.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Flowcharts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 19: Buffered Enhanced Factory Programming (BEFP) Procedure
No (SR7 = 1)
Yes (SR7 = 0)
Yes (SR0 = 0)
BEFP setup
done?
Issue BEFP SETUP
Data = 0x80
Start
Exit
Issue BEFP CONFIRM
Data = 00D0h
BEFP setup
delay
Read status
register
SR error-handler
user-defined
Yes
No
Buffer full?
Buffer ready?
Read status
register register
Write data
word to buffer
Read status
register
Program
done?
No
Yes Program
more data
?
Write 0xFFFF
outside block
Setup Phase Program and Verify Phase Exit Phase
Finish
Yes (SR7 = 1)
No (SR7 = 0)
BEFP exited?
Full status
register check
for errors
No (SR0 = 1)
No (SR0 = 1)
Yes (SR0 = 0)
Read status
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Flowcharts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 70 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 20: Block Erase Procedure
Start
SR7 = 1?
Erase Suspend
See Suspend/
Resume Flowchart
Error Handler
user-defined
routine
End
Command Cycle
- Issue ERASE command
- Address = block to be erased
- Data = 0x20
Yes
Yes
No
No Suspend?
Confirm Cycle
Check Ready Status
- Issue CONFIRM command
- Address = block to be erased
- Data = erase confirm (0xD0)
- READ STATUS REGISTER
command not required
- Perform READ operation
- Read ready status on SR7
No
Yes
Errors?
Read Status Register
- Toggle CE# or OE#
to update status register
- See Status Register Flowchart
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Flowcharts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 71 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 21: Program Suspend/Resume Procedure
Read Status Register
=
SR2
SR7
=
Read Array Data
Program
Completed
Done
Reading
Program
Resumed
Read Array
Data
0
No
0
Yes
1
1
Start
Write B0h
Any Address
Program Suspend
Read Status
Write 70h
Write FFh
Any Address
Read Array
Write D0h
Any Address
Program Resume
Write FFh
Read Array
Write 70h
Any Address
Read Status
Any Address
1 = Ready
0 = Busy
1 = Suspended
0 = Completed
(Address = Block to suspend)
update the status register
Initiate Read cycle to
from a block other than
programmed
from the one being
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Flowcharts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 72 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 22: Erase Suspend/Resume Procedure
Read Status Register
=
SR6
SR7
=
Read/Program?
Erase
Completed
Done?
Erase
Resumed
Read Array
Data
0
0
Yes
No
1
1
Start
Write B0h
Any Address
Erase Suspend
Read Status
Write 70h
Write D0h
Any Address
Erase Resume
Write FFh
Read Array
Write 70h
Any Address
Read Status
Any Address
1 = Suspended
0 = Completed
1 = Ready
0 = Busy
(FFh/40h)
Address = X
Toggle CE#/OE# to
update the
status register
Read Program
Read Array Data from
a block other than the
one being erased
Program Loop: to a
block other than the
one being erased
1
Note: 1. The tERS/SUSP timing between the initial BLOCK ERASE or ERASE RESUME command and
a subsequent ERASE SUSPEND command should be followed.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Flowcharts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 73 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 23: Block Lock Operations Procedure
Write 90h
Read Block
Lock Status
Locking
Change?
Lock Change
Complete
No
Yes
Start
Write 01h, D0h, 2Fh
Block Address
Lock Confirm
Read ID Plane
Lock Setup
Write 60h
Write FFh
Any Address
Read Array
Block Address
Optional
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Flowcharts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 74 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 24: OTP Register Programming Procedure
Start
SR7 = 1?
End
OTP Program Setup
- Write 0xC0
- OTP Address
Yes
No
Confirm Data
- Write OTP Address and Data
Check Ready Status
- READ STATUS REGISTER
command not required
- Perform READ operation
- Read ready status on SR7
Read Status Register
- Toggle CE# or OE#
to update status register
- See Status Register Flowchart
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Flowcharts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 75 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 25: Status Register Procedure
Erase Suspend
See Suspend/
Resume Flowchart
Set/Reset
by device
- Set by device
- Reset by user
- See Clear Status
Register Command
Start
End
Command Cycle
- Issue STATUS REGISTER command
- Address = any device address
- Data = 0x70
Data Cycle
- Read Status Register SR[7:0]
Yes
Yes
Yes
No
No
No
Yes
Yes No
No
SR7 = 1
SR6 = 1
SR2 = 1
SR5 = 1 SR4 = 1
SR4 = 1
SR3 = 1
SR1 = 1
No
Yes
Yes
Yes
No
No
Program Suspend
See Suspend/
Resume Flowchart
Error
Erase failure
Error
Command
sequence
Error
Program failure
Error
VPEN/VPP <
VPENLK/VPPLK
Error
Block locked
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Flowcharts
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 76 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Power and Reset Specifications
VCC should attain VCCmin from VSS simultaneously with or before applying VCCQ, VPP
during power up. VCC should attain VSS during power down. Device inputs should not
be driven before supply voltage = VCCmin.
Power supply transitions should only occur when RST# is LOW. This protects the device
from accidental programming or erasure during power transitions.
Asserting RST# during a system reset is important with automated program/erase devi-
ces because systems typically expect to read from the device when coming out of reset.
If a CPU reset occurs without a device reset, proper CPU initialization may not occur.
This is because the device may be providing status information, instead of array data as
expected. Connect RST# to the same active LOW reset signal used for CPU initialization.
Because the device is disabled when RST# is asserted, it ignores its control inputs dur-
ing power-up/down. Invalid bus conditions are masked, providing a level of memory
protection.
Table 37: Power and Reset
Parameter Symbol Min Max Unit Notes
RST# pulse width LOW tPLPH 100 ns 1, 2, 3, 4
RST# LOW to device reset during erase tPLPH 25 us 1, 3, 4, 7
RST# LOW to device reset during program 25 1, 3, 4, 7
VCC Power valid to RST# de-assertion (HIGH) tVCCPH 300 1, 4, 5, 6
Notes: 1. These specifications are valid for all device versions (packages and speeds).
2. The device may reset if tPLPH is < tPLPH MIN, but this is not guaranteed.
3. Not applicable if RST# is tied to VCC.
4. Sampled, but not 100% tested.
5. When RST# is tied to the VCC supply, device will not be ready until tVCCPH after VCC
VCCMIN.
6. When RST# is tied to the VCCQ supply, device will not be ready until tVCCPH after VCC
VCCMIN.
7. Reset completes within tPLPH if RST# is asserted while no ERASE or PROGRAM operation
is executing.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Power and Reset Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 77 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 26: Reset Operation Waveforms
(A) Reset during
read mode
VIH
VIL
RST#
(D) VCC power-up to
RST# HIGH
tPLPH tPHQV
tPHQV
tPHQV
VCC
0V
VCC
tVCCPH
(B) Reset during
program or block erase
P1 P2
VIH
VIL
RST#
Abort
complete
Abort
complete
tPLRH
(C) Reset during
program or block erase
P1 P2
VIH
VIL
RST#
tPLRH
Power Supply Decoupling
The device requires careful power supply de-coupling. Three basic power supply cur-
rent considerations are 1) standby current levels, 2) active current levels, and 3) transi-
ent peaks produced when CE# and OE# are asserted and de-asserted.
When the device is accessed, internal conditions change. Circuits within the device ena-
ble charge pumps, and internal logic states change at high speed. These internal activi-
ties produce transient signals. Transient current magnitudes depend on the device out-
puts’ capacitive and inductive loading. Two-line control and correct de-coupling capac-
itor selection suppress transient voltage peaks.
Because the devices draw their power from VCC, VPP, and VCCQ, each power connection
should have a 0.1µF and a 0.01µF ceramic capacitor to ground. High-frequency, inher-
ently low-inductance capacitors should be placed as close as possible to package leads.
Additionally, for every eight devices used in the system, a 4.7µF electrolytic capacitor
should be placed between power and ground close to the devices. The bulk capacitor is
meant to overcome voltage droop caused by PCB trace inductance.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Power and Reset Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 78 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Maximum Ratings and Operating Conditions
Stresses greater than those listed can cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated is not guaranteed.
Table 38: Maximum Ratings
Parameter Maximum Rating Notes
Temperature under bias –40°C to + 85 °C
Storage temperature –65°C to + 125 °C
Voltage on any signal (except VCC, VPP, and VCCQ) –2V to +4V 1
VPP voltage –2V to +11.5V 1, 2
VCC voltage –2V to +4V 1
VCCQ voltage –2V to +5.6V 1
Output short circuit current 100mA 3
Notes: 1. Voltages shown are specified with respect to VSS. During infrequent nonperiodic transi-
tions, the level may undershoot to –2V for periods less than 20ns or overshoot to VCC +
2V or VCCQ + 2V or VPP + 2V for periods less than 20ns.
2. Program/erase voltage is typically 1.7–2V; 9V can be applied for 80 hours maximum to-
tal, however, 9V program/erase voltage may reduce block cycling capability.
3. Output is shorted for no more than one second, and more than one output is not shor-
ted at one time.
Table 39: Operating Conditions
Symbol Parameter Min Max Unit Notes
TAOperating temperature –40 +85 °C 1
VCC VCC supply voltage 1.7 2 V
VCCQ I/O supply voltage CMOS inputs 1.7 3.6
TTL inputs 2.4 3.6
VPPL VPP voltage supply (logic level) 0.9 3.6 2
VPPH Buffered enhanced factory programming VPP 8.5 9.5
tPPH Maximum VPP hours VPP = VPPH 80 Hours
BLOCK
ERASE cycles
Main and parameter blocks VPP = VPPL 100,000 Cycles
Main blocks VPP = VPPH 1000
Parameter blocks VPP = VPPH 2500
Notes: 1. TA = ambient temperature.
2. In typical operation, VPP program voltage is VPPL.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Maximum Ratings and Operating Conditions
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 79 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
DC Electrical Specifications
Table 40: DC Current Characteristics
Parameter Symbol
CMOS Inputs
(VCCQ =
1.7–3.6V)
TTL Inputs
(VCCQ =
2.4–3.6V)
Unit Test Conditions NotesTyp Max Typ Max
Input load current ILI ±1 ±2 µA VCC = VCC (MAX)
VCCQ = VCCQ (MAX)
VIN = VCCQ or VSS
1, 6
Output
leakage
current
DQ[15:0], WAIT ILO ±1 ±10 µA VCC = VCC (MAX)
VCCQ = VCCQ (MAX)
VIN = VCCQ or VSS
VCC standby,
Power-down
256Mb ICCS,
ICCD
65 210 65 210 µA VCC = VCC (MAX)
VCCQ = VCCQ (MAX)
CE# = VCCQ
RST# = VCCQ (for ICCS)
RST# = VSS (for ICCD)
WP# = VIH
1. 2
512Mb 130 420 130 420
Average
VCC read
current
Asynchronous sin-
gle-word f = 5 MHz
(1 CLK)
ICCR 26 31 26 31 mA 16-word read VCC = VCC (MAX)
CE# = VIL
OE# = VIH
Inputs:
VIL or VIH
1
Page mode read
f = 13 MHz (17 CLK)
12 16 12 16 mA 16-word read
Synchronous burst
f = 52 MHz, LC = 4
19 22 19 22 mA 8-word read
16 18 16 18 mA 16-word read
21 24 21 24 mA Continuous
read
VCC program current,
VCC erase current
ICCW,
ICCE
35 50 35 50 mA VPP = VPPL,
program/erase in progress
1, 3, 5
35 50 35 50 VPP = VPPH,
program/erase in progress
1, 3, 5
VCC program sus-
pend current,
VCC erase
suspend current
256Mb ICCWS,
ICCES
65 210 65 210 µA CE# = VCCQ, suspend in pro-
gress
1, 3, 4
512Mb 70 225 70 225
VPP standby current,
VPP program suspend current,
VPP erase suspend current
IPPS,
IPPWS,
IPPES
0.2 5 0.2 5 µA VPP = VPPL,
suspend in progress
1, 3, 7
VPP read IPPR 2 15 2 15 µA VPP = VPPL 1, 3
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
DC Electrical Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 80 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 40: DC Current Characteristics (Continued)
Parameter Symbol
CMOS Inputs
(VCCQ =
1.7–3.6V)
TTL Inputs
(VCCQ =
2.4–3.6V)
Unit Test Conditions NotesTyp Max Typ Max
VPP program current IPPW 0.05 0.1 0.05 0.1 mA VPP = VPPL, program in progress 3
0.05 0.1 0.05 0.1 VPP = VPPH, program in pro-
gress
VPP erase current IPPE 0.05 0.1 0.05 0.1 mA VPP = VPPL, erase in progress 3
0.05 0.1 0.05 0.1 VPP = VPPH, erase in progress
VPP blank check IPPBC 0.05 0.1 0.05 0.1 mA VPP = VPPL 3
0.05 0.1 0.05 0.1 VPP = VPPH
Notes: 1. All currents are RMS unless noted. Typical values at TYP VCC, TC = +25°C.
2. ICCS is the average current measured over any 5ms time interval 5µs after CE# is de-asser-
ted.
3. Sampled, not 100% tested.
4. ICCES is specified with the device deselected. If device is read while in erase suspend, cur-
rent is ICCES plus ICCR.
5. ICCW, ICCE measured over TYP or MAX times specified in Program and Erase Characteris-
tics (page 97).
6. if VIN > VCC, the input load current increases to 10µA MAX.
7. the IPPS,IPPWS,IPPES will increase to 200µA when VPP/WP# is at VPPH.
Table 41: DC Voltage Characteristics
Parameter Symbol
CMOS Inputs
(VCCQ = 1.7–3.6V)
TTL Inputs1
(VCCQ = 2.4–3.6V)
Unit Test Conditions NotesMin Max Min Max
Input low voltage VIL –0.5 0.4 –0.5 0.6 V 2
Input high voltage VIH VCCQ - 0.4 VCCQ + 0.5 2 VCCQ + 0.5 V
Output low voltage VOL 0.2 0.2 V VCC = VCC (MIN)
VCCQ = VCCQ (MIN)
IOL = 100µA
Output high voltage VOH VCCQ - 0.2 VCCQ – 0.2 V VCC = VCC (MIN)
VCCQ = VCCQ (MIN)
IOH = –100µA
VPP lock out voltage VPPLK 0.4 0.4 V 3
VCC lock voltage VLKO 1.5 1.5 V
VCCQ lock voltage VLKOQ 0.9 0.9 V
Notes: 1. Synchronous read mode is not supported with TTL inputs.
2. VIL can undershoot to –1.0V for durations of 2ns or less and VIH can overshoot to VCCQ +
1.0V for durations of 2ns or less.
3. VPP VPPLK inhibits ERASE and PROGRAM operations. Do not use VPPL and VPPH outside
their valid ranges.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
DC Electrical Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 81 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
AC Test Conditions and Capacitance
Figure 27: AC Input/Output Reference Timing
Input VCCQ/2 VCCQ/2 output
VCCQ
0V
Test points
Note: 1. AC test inputs are driven at VCCQ for logic 1 and at 0V for logic 0. Input/output timing
begins/ends at VCCQ/2. Input rise and fall times (10% to 90%) <5ns. Worst-case speed oc-
curs at VCC = VCC (MIN).
Figure 28: Transient Equivalent Load Circuit
Device under
test Out
CL
Notes: 1. See the Test Configuration for Worst-Case Speed Conditions table for component values.
2. CL includes jig capacitance.
Table 42: Test Configuration: Worst-Case Speed Condition
Test Configuration CL (pF)
VCCQ(MIN) standard test 30
Figure 29: Clock Input AC Waveform
tFCLK/RCLK
CLK
tCH/CL
VIH
VIL
tCLK
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Test Conditions and Capacitance
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 82 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 43: Capacitance
Parameter Signal Density Min Typ Max Unit Condition Notes
Input
Capacitance
Address, Data,
CE#, WE#, OE#,
RST#, CLK,
ADV#, WP#
256Mb 3 7 8 pF TYP temp = 25°C;
MAX temp = 85°C
VCC = 0–2.0V,
VCCQ = 0– 3.6V
Discrete silicon die
1
256Mb/
256Mb
6 14 16
Output
Capacitance
Data, WAIT 256Mb 3 5 7
256Mb/
256Mb
6 10 14
Note: 1. Sampled, but not 100% tested.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Test Conditions and Capacitance
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 83 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
AC Read Specifications
Table 44: AC Read Specifications
Parameter Symbol Min Max Unit Notes
Asynchronous Specifications
READ cycle time tAVAV Easy BGA
QUAD+
100 ns
TSOP 110
Address to output valid tAVQV Easy BGA
QUAD+
100 ns
TSOP 110
CE# LOW to output valid tELQV Easy BGA
QUAD+
100 ns
TSOP 110
OE# LOW to output valid tGLQV 25 ns 1, 2
RST# HIGH to output valid tPHQV 150 ns 1
CE# LOW to output in Low-Z tELQX 0 ns 1, 3
OE# LOW to output in Low-Z tGLQX 0 ns 1, 2, 3
CE# HIGH to output in High-Z tEHQZ 20 ns 1, 3
OE# HIGH to output in High-Z tGHQZ 15
Output hold from first occurring
address, CE#, or OE# change
tOH 0
CE# pulse width HIGH tEHEL 17 ns 1
CE# LOW to WAIT valid tELTV 17
CE# HIGH to WAIT High-Z tEHTZ 20 ns 1, 3
OE# LOW to WAIT valid tGLTV 17 ns 1
OE# LOW to WAIT in Low-Z tGLTX 0 ns 1, 3
OE# HIGH to WAIT in High-Z tGHTZ 20
Latching Specifications
Address setup to ADV# HIGH tAVVH 10 ns 1
CE# LOW to ADV# HIGH tELVH 10
ADV# LOW to output valid tVLQV Easy BGA
QUAD+
100 ns 1
TSOP 110
ADV# pulse width LOW tVLVH 10 ns 1
ADV# pulse width HIGH tVHVL 10
Address hold from ADV# HIGH tVHAX 9 ns 1, 4
Page address access tAPA 25 ns 1
RST# HIGH to ADV# HIGH tPHVH 30 -
Clock Specifications
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Read Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 84 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 44: AC Read Specifications (Continued)
Parameter Symbol Min Max Unit Notes
CLK frequency tCLK Easy BGA
QUAD+
52 MHz 1, 3, 5, 6
TSOP 40
CLK period tCLK Easy BGA
QUAD+
19.2 ns 1, 3, 5, 6
TSOP 25
CLK HIGH/LOW time tCH/CL Easy BGA
QUAD+
5 ns 1, 3, 5, 6
TSOP 9
CLK fall/rise time tFCLK/RCLK 0.3 3 ns 1, 3, 5, 6
Synchronous Specifications5
Address setup to CLK tAVCH/L 9 ns 1, 6
ADV# LOW setup to CLK tVLCH/L 9
CE# LOW setup to CLK tELCH/L 9
CLK to output valid tCHQV /
tCLQV
Easy BGA
QUAD+
17 ns 1, 6
TSOP 20
Output hold from CLK tCHQX 3 - ns 1, 6
Address hold from CLK tCHAX 10 - ns 1, 4, 6
CLK to WAIT valid tCHTV Easy BGA
QUAD+
17 ns 1, 6
TSOP 20
CLK valid to ADV# setup tCHVL 3 ns 1
WAIT hold from CLK tCHTX 3 ns 1, 6
Notes: 1. See AC Test Conditions for timing measurements and maximum allowable input slew
rate.
2. OE# may be delayed by up to tELQV – tGLQV after CE#’s falling edge without impact to
tELQV.
3. Sampled, not 100% tested.
4. Address hold in synchronous burst mode is tCHAX or tVHAX, whichever timing specifica-
tion is satisfied first.
5. Synchronous read mode is not supported with TTL level inputs.
6. Applies only to subsequent synchronous reads.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Read Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 85 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 30: Asynchronous Single-Word Read (ADV# LOW)
A
tAVAV
ADV#
CE#
OE#
WAIT
DQ
RST#
tAVQV
tELQV
tGLQV
tGLTV
tGLQX
tELQX
tPHQV
tEHQZ
tGHQZ
tGHTZ
Note: 1. WAIT shown deasserted during asynchronous read mode (RCR10 = 0, WAIT asserted
LOW).
Figure 31: Asynchronous Single-Word Read (ADV# Latch)
A[4:1]
A[MAX:5]
CE#
OE#
WAIT
DQ
ADV#
tELQX
tGLQV
tELQV tEHQZ
tGHQZ
tGHTZ
tOH
tAVAV
tAVQV
tVHVL
tAVVH
tGLTV
tGLQX
tVHAX
Note: 1. WAIT shown deasserted during asynchronous read mode (RCR10 = 0, WAIT asserted
LOW).
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Read Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 86 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 32: Asynchronous Page Mode Read
A[MAX:5]
A[4:1]
ADV#
tAVQV
tVHAX
tVHVL
tAVVH
CE#
OE#
WAIT
DQ
tEHTZ
tOH tOH tOH
tAPA
tELQX tAPA
tAPA
tELQV
tGLQV
Valid address
10 2 F
Q1 Q2 Q3 Q16
tOH
tEHQZ
tGHQZ
Note: 1. WAIT shown deasserted during asynchronous read mode (RCR10 = 0, WAIT asserted
LOW).
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Read Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 87 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 33: Synchronous Single-Word Array or Nonarray Read
CLK
CE#
OE#
WAIT
DQ
ADV#
A
tAVCH tCHAX
tAVQV
tAVVH
tVLVH
tELCH
tELVH tELQV
tGLQX
tGLTX
tGHQZ
tEHQZ
tCHTX
tGLQV tCHQV tCHQX
tGHTZ
tCHTV
tVHAX
tVHVL
Notes: 1. WAIT is driven per OE# assertion during synchronous array or nonarray read and can be
configured to assert either during or one data cycle before valid data.
2. In this example, an n-word burst is initiated to the flash memory array and is terminated
by CE# deassertion after the first word in the burst.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Read Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 88 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 34: Continuous Burst Read with Output Delay
A
CLK
ADV#
CE#
OE#
WAIT
DQ
tVLCH
tAVCH
tAVVH
tAVQV
tCHAX tCHQV
tCHQV
tCHQV
tCHTX
tCHTV
tCHQV
tGLQX
tGLQV
tELCH
tCHQX
tCHQX tCHQX
tCHQX
tELVH
tELQV
tGLTX
tVHVL tVHAX
Notes: 1. WAIT is driven per OE# assertion during synchronous array or nonarray read and can be
configured to assert either during or one data cycle before valid data.
2. At the end of a wordline; the delay incurred when a burst access crosses a 16-word
boundary and the starting address is not 4-word boundary aligned.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Read Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 89 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 35: Synchronous Burst Mode 4-Word Read
A
CLK
ADV#
CE#
OE#
WAIT
DQ
tVLCH
tAVCH Latency count
tAVVH
tAVQV
tCHAX
tGHTZ
tCHTV
tGHQZ
tCHQV
tCHQV
tGLQX
tGLQV
tOH
tCHQX
tELVH
tELQV
tGLTV
tVHVL tVHAX
A
tELCH tEHQZ
Q0 Q1 Q2 Q3
Note: 1. WAIT is driven per OE# assertion during synchronous array or nonarray read. WAIT as-
serted during initial latency and deasserted during valid data (RCR10 = 0, WAIT asserted
LOW).
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Read Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 90 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
AC Write Specifications
Table 45: AC Write Specifications
Parameter Symbol Min Max Unit Notes
RST# HIGH recovery to WE# LOW tPHWL 150 - ns 1, 2, 3
CE# setup to WE# LOW tELWL 0 - ns 1, 2, 3
WE# write pulse width LOW tWLWH 50 - ns 1, 2, 4
Data setup to WE# HIGH tDVWH 50 - ns 1, 2, 12
Address setup to WE# HIGH tAVWH 50 - ns 1, 2
CE# hold from WE# HIGH tWHEH 0 - ns
Data hold from WE# HIGH tWHDX 0 - ns
Address hold from WE# HIGH tWHAX 0 - ns
WE# pulse width HIGH tWHWL 20 - ns 1, 2, 5
VPP setup to WE# HIGH tVPWH 200 - ns 1, 2, 3, 7
VPP hold from status read tQVVL 0 - ns
WP# hold from status read tQVBL 0 - ns 1, 2, 3, 7
WP# setup to WE# HIGH tBHWH 200 - ns
WE# HIGH to OE# LOW tWHGL 0 - ns 1, 2, 9
WE# HIGH to read valid tWHQV tAVQV + 35 - ns 1, 2, 3, 6, 10
Write to Asynchronous Read Specifications
WE# HIGH to address valid tWHAV 0 - ns 1, 2, 3, 6, 8
Write to Synchronous Read Specifications
WE# HIGH to clock valid tWHCH/L 19 - ns 1, 2, 3, 6, 10
WE# HIGH to ADV# HIGH tWHVH 19 - ns
WE# HIGH to ADV# LOW tWHVL 7 - ns
Write Specification with Clock Active
ADV# HIGH to WE# LOW tVHWL - 20 ns 1, 2, 3, 11
Clock HIGH to WE# LOW tCHWL - 20 ns
Notes: 1. Write timing characteristics during erase suspend are the same as WRITE-only opera-
tions.
2. A WRITE operation can be terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width LOW (tWLWH or tELEH) is defined from CE# or WE# LOW (whichever
occurs last) to CE# or WE# HIGH (whichever occurs first). Thus, tWLWH = tELEH = tWLEH
= tELWH.
5. Write pulse width HIGH tWHWL or tEHEL) is defined from CE# or WE# HIGH whichever
occurs first) to CE# or WE# LOW whichever occurs last). Thus, tWHWL = tEHEL = tWHEL =
tEHWL).
6. tWHVH or tWHCH/L must be met when transitioning from a WRITE cycle to a synchro-
nous BURST read.
7. VPP and WP# should be at a valid level until erase or program success is determined.
8. This specification is only applicable when transitioning from a WRITE cycle to an asyn-
chronous read. See spec tWHCH/L and tWHVH for synchronous read.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Write Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 91 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
9. When doing a READ STATUS operation following any command that alters the status
register, tWHGL is 20ns.
10. Add 10ns if the WRITE operation results in an RCR or block lock status change, for the
subsequent READ operation to reflect this change.
11. These specs are required only when the device is in a synchronous mode and the clock is
active during an address setup phase.
12. This specification must be complied with customer’s writing timing. The result would be
unpredictable if there is any violation to this timing specification.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Write Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 36: Write to Write Timing
Figure 37: Asynchronous Read to Write Timing
A
tAVAV
CE#
OE#
WAIT
WE#
DQ
RST#
tAVQV tWHAX
tAVWH
tELQV tEHQZ
tGLQV
tGLQX tWHDX
tELQX tOH
Q D
tDVWH
tPHQV
tGHQZ
tELWL
tGLTV tGHTZ
tWLWH tWHEH
Note: 1. WAIT de-asserted during asynchronous read and during write. WAIT High-Z during write
per OE# deasserted.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Write Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 93 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 38: Write to Asynchronous Read Timing
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Write Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 94 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 39: Synchronous Read to Write Timing
A
CLK
ADV#
CE#
OE#
WE#
WAIT
DQ
tVLCH
tAVCH Latency count
tAVVH
tAVQV
tWHAV
tAVWH
tVLVH
tCHAX
tCHTV
tGLQX
tGLQV
tWHDX
tVLWH
tWLWH
tELWL
tCHWL
tWHWL
tCHWL
tWHAX
tVHWL
tVHWL
tCHQX
tELVH
tELQV
tGLTX
tVHVL tVHAX
tELCH tEHEL
tEHTZ tWHEH
tGHQZ
DDQ
tCHQV
tCHTX
Note: 1. WAIT shown de-asserted and High-Z per OE# de-assertion during WRITE operation
(RCR10 = 0, WAIT asserted LOW). Clock is ignored during WRITE operation.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Write Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 95 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Figure 40: Write to Synchronous Read Timing
A
CLK
ADV#
CE#
WE#
OE#
WAIT
DQ
RST#
tAVCH
tVLCH
tCHAX
tWHAX
tAVWH
tAVQV
Latency count
tCHTV
tGLTX
tELCH
tWHEH
tWHVH
tWLWH
tGLQV
tWHCH/L
tWHAV
tCHQV
tELQV
tWHDX
tDVWH
tPHWL
tCHQX
tCHQV
tEHEL
tELWL
tVLVH tVHAX
D Q Q
Note: 1. WAIT shown de-asserted and High-Z per OE# de-assertion during WRITE operation
(RCR10 = 0, WAIT asserted LOW).
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
AC Write Specifications
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 96 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Program and Erase Characteristics
Table 46: Program and Erase Specifications
Parameter Symbol
VPPL VPPH
Unit NotesMin Typ Max Min Typ Max
Conventional Word Programming
Program
time
Single word tPROG/W 270 456 270 456 µs 1
Buffered Programming
Program
time
Aligned, BP time (32
words)
tPROG 310 716 310 716 µs 1
Aligned, BP time (64
words)
310 900 310 900
Aligned, BP time (128
words)
375 1140 375 1140
Aligned, BP time (256
words)
505 1690 505 1690
One full buffer, BP time
(512 words)
900 3016 900 3016
Buffered Enhanced Factory Programming
Program Single byte tBEFP/B N/A N/A N/A 0.5 µs 1, 2
BEFP Setup tBEFP/SETUP N/A N/A N/A 5 1
Erase and Suspend
Erase time 32KB parameter tERS/PB 0.8 4.0 0.8 4.0 s 1
128KB main tERS/MB 0.8 4.0 0.8 4.0
Suspend la-
tency
Program suspend tSUSP/P 25 30 25 30 µs
Erase suspend tSUSP/E 25 30 25 30
Erase-to-suspend tERS/SUSP 500 500 1, 3
Blank Check
Blank check Main array block tBC/MB 3.2 3.2 ms
Notes: 1. Typical values measured at TC = +25°C and nominal voltages. Performance numbers are
valid for all speed versions. Excludes system overhead. Sampled, but not 100% tested.
2. Averaged over entire device.
3. tERS/SUSP is the typical time between an initial BLOCK ERASE or ERASE RESUME com-
mand and the a subsequent ERASE SUSPEND command. Violating the specification re-
peatedly during any particular block erase may cause erase failures.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Program and Erase Characteristics
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 97 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Revision History
Rev. D – 9/15
Correct the tCHTX spec.
Rev. C – 12/13
On cover page, corrected erase suspend (TYP) from 30μs to 25μs.
Added the following part number disclaimer: "Not all part numbers listed here are
available for ordering."
Revised timings
Rev. B – 8/13
Format and organization edits
Rev. A – 10/12
Initial Micron brand release
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
256Mb and 512Mb (256Mb/256Mb),
P30-65nm
Revision History
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 98 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.