MJE172G - ON Semiconductor - Datasheet.Directory

August, 2012 − Rev. 10

1Publication Order Number:

MJE171/D

MJE170, MJE171, MJE172

(PNP), MJE180, MJE181,

MJE182 (NPN)

Complementary Plastic

Silicon Power Transistors

The MJE170/180 series is designed for low power audio amplifier

and low current, high speed switching applications.

Features

•Collector−Emitter Sustaining Voltage −

VCEO(sus) = 40 Vdc − MJE170, MJE180

= 60 Vdc − MJE171, MJE181

= 80 Vdc − MJE172, MJE182

•DC Current Gain −

hFE = 30 (Min) @ IC = 0.5 Adc

= 12 (Min) @ IC = 1.5 Adc

•Current−Gain − Bandwidth Product −

fT = 50 MHz (Min) @ IC = 100 mAdc

•Annular Construction for Low Leakages −

ICBO = 100 nA (Max) @ Rated VCB

•Epoxy Meets UL 94 V−0 @ 0.125 in

•ESD Ratings: Machine Model, C

Human Body Model, 3B

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Base Voltage

MJE170, MJE180

MJE171, MJE181

MJE172, MJE182

VCB 60

100

Vdc

Collector−Emitter Voltage

MJE170, MJE180

MJE171, MJE181

MJE172, MJE182

VCEO 40

Vdc

Emitter−Base Voltage VEB 7.0 Vdc

Collector Current − Continuous

− Peak

IC3.0

6.0

Adc

Base Current IB1.0 Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD12.5

0.012

W/_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

PD1.5

0.1

W/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to +150 _C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings

are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended

Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−225AA

CASE 77−09

STYLE 1

3 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

40 − 60 − 80 VOLTS

12.5 WATTS

321

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

YWW

JE1xxG

Y = Year

WW = Work Week

JE1xx = Specific Device Code

x = 70, 71, 72, 80, 81, or 82

G=Pb−Free Package

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case qJC 10 _C/W

Thermal Resistance, Junction−to−Ambient qJA 83.4 _C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage MJE170, MJE180

(IC = 10 mAdc, IB = 0) MJE171, MJE181

MJE172, MJE182

VCEO(sus) 40

−

Vdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) MJE170, MJE180

(VCB = 80 Vdc, IE = 0) MJE171, MJE181

(VCB = 100 Vdc, IE = 0) MJE172, MJE182

(VCB = 60 Vdc, IE = 0, TC = 150°C) MJE170, MJE180

(VCB = 80 Vdc, IE = 0, TC = 150°C) MJE171, MJE181

(VCB = 100 Vdc, IE = 0, TC = 150°C) MJE172, MJE182

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

IEBO −0.1 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.5 Adc, VCE = 1.0 Vdc)

hFE 50

250

−

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.5 Adc, IB = 150 mAdc)

(IC = 3.0 Adc, IB = 600 mAdc)

VCE(sat)

−

0.3

0.9

1.7

Vdc

Base−Emitter Saturation Voltage

(IC = 1.5 Adc, IB = 150 mAdc)

(IC = 3.0 Adc, IB = 600 mAdc)

VBE(sat)

−

1.5

2.0

Vdc

Base−Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on) −1.2 Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 1)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

fT50 −MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE171/MJE172

MJE181/MJE182

Cob

−

1. fT = ⎪hfe⎪• ftest.

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

Figure 1. Power Derating

T, TEMPERATURE (°C)

040 60 100 120 160

8.0

6.0

PD, POWER DISSIPATION (WATTS)

2.8

2.0

1.6

1.2

2.4

4.00.8

2.00.4

80 140

Figure 2. Switching Time Test Circuit

+11 V

25 ms

-9.0 V

-4 V

SCOPE

VCC

+30 V

tr, tf ≤ 10 ns

DUTY CYCLE =

1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

IC, COLLECTOR CURRENT (AMPS)

VCE = 30 V

IC/IB = 10

VBE(off) = 4.0 V

TJ = 25°C

t, TIME (ns)

500

300

200

100

0.01 0.03 0.05 0.50.20.1 0.3 10

Figure 3. Turn−On Time

5213

NPN MJE181/182

PNP MJE171/172

0.02

t, TIME (ms)

0.01

0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

qJC(t) = r(t) qJC

qJC = 10°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.2

RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

0 (SINGLE PULSE)

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.01 30

2.0

5.0

0.1

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

Figure 5. MJE171, MJE172

500ms

5.0ms

1.0

2010 505.03.02.01.0 100

100ms

TJ = 150°C

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.01

Figure 6. MJE181, MJE182

IC, COLLECTOR CURRENT (AMP)

MJE171

MJE172

0.02

0.05

0.2

0.5

302010 505.03.02.01.0 100

2.0

5.0

0.1

1.0

0.02

0.05

0.2

0.5

100ms

500ms

5.0ms dc

MJE181

MJE182

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

TJ = 150°C

7.0

ACTIVE−REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of

a transistor − average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150°C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

TJ(pk) t 150°C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperature, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10K

IC, COLLECTOR CURRENT (AMPS)

500

300

200

100

Figure 7. Turn−Off Time

t, TIME (ns)

0.01 0.03 0.05 0.50.2

0.02 0.1 0.3 105213

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

VR, REVERSE VOLTAGE (VOLTS)

10 50

100

Figure 8. Capacitance

20105.03.02.01.00.5

C, CAPACITANCE (pF)

0.7

TJ = 25°C

Cib

Cob

NPN MJE181/182

PNP MJE171/172

PNP MJE171/MJE172

NPN MJE181/MJE182

307.0

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

ORDERING INFORMATION

Device Package Shipping

MJE170 TO−225

500 Units / Box

MJE170G TO−225

(Pb−Free)

MJE171 TO−225

MJE171G TO−225

(Pb−Free)

MJE172 TO−225

MJE172G TO−225

(Pb−Free)

MJE180 TO−225

MJE180G TO−225

(Pb−Free)

MJE181 TO−225

MJE181G TO−225

(Pb−Free)

MJE182 TO−225

MJE182G TO−225

(Pb−Free)

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)

http://onsemi.com

PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE AA

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

DIM MIN MAX

MILLIMETERS

D10.60 11.10

E7.40 7.80

A2.40 3.00

b0.60 0.90

P2.90 3.30

L1 1.27 2.54

c0.39 0.63

L14.50 16.63

b2 0.51 0.88

Q3.80 4.20

A1 1.00 1.50

e2.04 2.54

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. NUMBER AND SHAPE OF LUGS OPTIONAL.

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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

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MJE171/D

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