TLDR440. Vishay Semiconductors High Intensity LED, 3 mm Tinted Diffused FEATURES * Exceptional brightness * Very high intensity even at low drive currents * Wide viewing angle * Low forward voltage * 3 mm (T-1) tinted diffused package * Deep red color * Categorized for luminous intensity * Outstanding material efficiency * Lead (Pb)-free device 19220 DESCRIPTION This LED contains the double heterojunction (DH) GaAlAs on GaAs technology. This deep red LED can be utilized over a wide range of drive current. It can be DC or pulse driven to achieve desired light output. The device is available in a 3 mm tinted diffused package. APPLICATIONS * Bright ambient lighting conditions * Battery powered equipment * Indoor and outdoor information displays * Portable equipment * Telecommunication indicators * General use PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Package: 3 mm * Product series: standard * Angle of half intensity: 40 PARTS TABLE PART COLOR, LUMINOUS INTENSITY TECHNOLOGY TLDR4400 Red,IV > 25 mcd GaAIAs on GaAs TLDR4401 Red, IV = (25 to 50) mcd GaAIAs on GaAs ABSOLUTE MAXIMUM RATINGS1) TLDR440. PARAMETER TEST CONDITION SYMBOL VALUE VR 6 V Tamb 60 C IF 50 mA tp 10 s IFSM 1 A Tamb 60 C PV 100 mW Reverse voltage DC Forward current Surge forward current Power dissipation UNIT Tj 100 C Operating temperature range Tamb - 40 to + 100 C Storage temperature range Tstg - 55 to + 100 C Tsd 260 C RthJA 400 K/W Junction temperature Soldering temperature t 5 s, 2 mm from body Thermal resistance junction/ ambient Note: 1) Tamb = 25 C unless otherwise specified Document Number 83001 Rev. 1.5, 18-Sep-07 www.vishay.com 1 TLDR440. Vishay Semiconductors Optical and Electrical Characteristics1) TLDR440., Red PARAMETER TEST CONDITION PART SYMBOL MIN TYP. TLDR4400 IV 25 45 TLDR4401 IV 25 MAX UNIT mcd Luminous intensity 2) IF = 20 mA Luminous intensity IF = 1 mA IV 2 mcd Dominant wavelength IF = 20 mA d 648 nm Peak wavelength IF = 20 mA p 650 nm Spectral line half width IF = 20 mA 20 nm Angle of half intensity IF = 20 mA 40 deg Forward voltage IF = 20 mA VF 1.8 Reverse current VR = 6 V IR VR = 0, f = 1 MHz Cj Junction capacitance 50 mcd 2.2 V 10 A 30 pF Note: 1) Tamb = 25 C, unless otherwise specified 2) In one Packing Unit IVmin/IVmax 0.5 TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified 10000 125 I F - Forward Current (mA) PV - Power Dissipation (mW) Tamb 65 C 100 75 50 25 20 40 60 80 100 Tamb - Ambient Temperature (C) 95 10904 0.02 0.05 100 1 10 0.5 0.2 1 0.01 0 0 1000 t p /T= 0.01 0.1 1 Figure 3. Forward Current vs. Pulse Length 0 60 10 20 30 IV rel - Relative Luminous Intensity IF - Forward Current (mA) 100 10 t p - Pulse Length (ms) 95 10047 Figure 1. Power Dissipation vs. Ambient Temperature 0.1 50 40 30 20 10 40 1.0 0.9 50 0.8 60 70 0.7 80 0 0 95 10095 20 40 60 80 100 Tamb - Ambient Temperature (C) Figure 2. Forward Current vs. Ambient Temperature for InGaN www.vishay.com 2 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10020 Figure 4. Rel. Luminous Intensity vs. Angular Displacement Document Number 83001 Rev. 1.5, 18-Sep-07 TLDR440. Vishay Semiconductors 10 100 IV rel - Relative Luminous Intensity IF - Forward Current (mA) red 10 1.5 2 3 2.5 VF - Forward Voltage (V) 95 10014 0.1 1 10 100 IF - Forward Current (mA) 95 10016 Figure 5. Figure 8. Relative Luminous Intensity vs. Forward Current 2.0 1.2 IV rel - Relative Luminous Intensity IV rel - Relative Luminous Intensity 1 0.01 0.1 1 1 red red 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 Tamb - Ambient Temperature (C) 95 10015 red 1.0 0.8 0.6 0.4 0.2 0 600 95 10018 Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 620 640 660 680 700 - Wavelength (nm) Figure 9. Relative Intensity vs. Wavelength IV rel - Relative Luminous Intensity 2.4 red 2.0 1.6 1.2 0.8 0.4 IFAV = 10 mA, const. 0 95 10262 10 20 50 100 200 500 1 0.5 0.2 0.1 0.05 0.02 IF (mA) tP/T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Document Number 83001 Rev. 1.5, 18-Sep-07 www.vishay.com 3 TLDR440. Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 95 10951 www.vishay.com 4 Document Number 83001 Rev. 1.5, 18-Sep-07 TLDR440. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 83001 Rev. 1.5, 18-Sep-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1