Vishay Semiconductors
TLDR440.
Document Number 83001
Rev. 1.5, 18-Sep-07
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1
High Intensity LED, ∅ 3 mm Tinted Diffused
FEATURES
• Exceptional brightness
• Very high intensity even at low drive
currents
• Wide viewing angle
• Low forward voltage
• 3 mm (T-1) tinted diffused package
• Deep red color
• Categorized for luminous intensity
• Outstanding material efficiency
• Lead (Pb)-free device
19220
DESCRIPTION
This LED contains the double heterojunction (DH)
GaAlAs on GaAs technology.
This deep red LED can be utilized over a wide range of
drive current. It can be DC or pulse driven to achieve
desired light output.
The device is available in a 3 mm tinted diffused
package.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 3 mm
• Product series: standard
• Angle of half intensity: ± 40°
APPLICATIONS
• Bright ambient lighting conditions
• Battery powered equipment
• Indoor and outdoor information displays
• Portable equipment
• Telecommunication indicators
• General use
Note:
1) Tamb = 25 °C unless otherwise specified
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
TLDR4400 Red,IV > 25 mcd GaAIAs on GaAs
TLDR4401 Red, IV = (25 to 50) mcd GaAIAs on GaAs
ABSOLUTE MAXIMUM RATINGS1) TLDR440.
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR6V
DC Forward current Tamb ≤ 60 °C IF50 mA
Surge forward current tp ≤ 10 μsI
FSM 1A
Power dissipation Tamb ≤ 60 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/
ambient RthJA 400 K/W
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Document Number 83001
Rev. 1.5, 18-Sep-07
Vishay Semiconductors
TLDR440.
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one Packing Unit IVmin/IVmax ≤ 0.5
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Optical and Electrical Characteristics1) TLDR440., Red
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity 2) IF = 20 mA TLDR4400 IV25 45 mcd
TLDR4401 IV25 50 mcd
Luminous intensity IF = 1 mA IV2mcd
Dominant wavelength IF = 20 mA λd648 nm
Peak wavelength IF = 20 mA λp650 nm
Spectral line half width IF = 20 mA Δλ 20 nm
Angle of half intensity IF = 20 mA ϕ± 40 deg
Forward voltage IF = 20 mA VF1.8 2.2 V
Reverse current VR = 6 V IR10 μA
Junction capacitance VR = 0, f = 1 MHz Cj30 pF
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for InGaN
100806040
0
25
50
75
100
125
P- Power Dissipation (mW)
V
T
amb - Ambient Temperature (°C)
95 10904
200
0
10
20
30
40
60
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
95 10095
50
020406080 100
Figure 3. Forward Current vs. Pulse Length
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
0.02
0.05
0.1
0.2
1
0.5
tp/T= 0.01
Tamb65 °C
≤
0.01 0.1 1 10
1
10
100
1000
10000
tp- Pulse Length (ms)
100
95 10047
I - Forward Current (mA)
F
0.4 0.2 0 0.2 0.4 0.6
95 10020
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I
V rel
- Relative Luminous Intensity
Document Number 83001
Rev. 1.5, 18-Sep-07
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3
Vishay Semiconductors
TLDR440.
Figure 5.
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
1
10
100
95 10014
1 1.5 2 2.5 3
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
red
0
95 10015
20 40 60 80 100
IV rel - Relative Luminous Intensity
Tamb - Ambient Temperature (°C)
0
0.4
0.8
1.2
1.6
2.0
red
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10262
500
0.5 0.2 0.1 0.05 0.021
I
F
(mA)
t
P
/T
I
V rel
- Relative Luminous Intensity
2.0
red
I
FAV
= 10 mA, const.
Figure 8. Relative Luminous Intensity vs. Forward Current
Figure 9. Relative Intensity vs. Wavelength
100.1 1
0.01
0.1
1
10
100
95 10016
IV rel - Relative Luminous Intensity
IF - Forward Current (mA)
red
600 620 640 660 680
0
0.2
0.4
0.6
0.8
1.2
700
95 10018
I
V rel
- Relative Luminous Intensity
- Wavelength (nm)
1.0
red
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Document Number 83001
Rev. 1.5, 18-Sep-07
Vishay Semiconductors
TLDR440.
PACKAGE DIMENSIONS in millimeters
95 10951
Document Number 83001
Rev. 1.5, 18-Sep-07
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Vishay Semiconductors
TLDR440.
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating sys-
tems with respect to their impact on the health and safety of our employees and the public, as well as their impact
on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Pro-
tection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting sub-
stances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damag-
es, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associ-
ated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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