Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com 1
Specifications subject to change without notice. 1/01A
31–35 GHz GaAs MMIC
Driver Amplifier
Features
■Single Bias Supply Operation (5 V)
■19 dB Typical Small Signal Gain
■17 dBm Typical P1 dB Output Power
at 35 GHz
■0.25 µm Ti/Pd/A u Gates
■100% On-Wafer RF and DC Testing
■100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA035P3-00
Description
Alpha’s three-stage reactively-matched Ka band GaAs
MMIC driver amplifier has a typical P1 dB of 17 dBm with
18 dB associated gain at 35 GHz.The chip uses Alpha’ s
prov en 0.25 µm MESFET technology, which is based upon
MBE la yers and electron beam lithogr aphy f or the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes.The amplifier is a self-bias design requiring a
single positive dr ain bias to one of any three bonding sites.
All chips are screened f or S-parameters prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where high gain and power are
required.
Parameter Condition Symbol Min. Typ.3Max. Unit
Drain Current IDS 275 350 mA
Small Signal Gain F= 31–35 GHz G 15 19 dB
Noise Figure1F= 35 GHz NF 10.5 dB
Input Return Loss F= 31–35 GHz RLI-14 -10 dB
Output Return Loss F= 31–35 GHz RLO-16 -10 dB
Output Power at 1 dB Gain Compression F= 35 GHz P1 dB 15 17 dBm
Saturated Output Power F= 35 GHz PSAT 16 19 dBm
Thermal Resistance2ΘJC 66 °C/W
Electrical Specifications at 25°C (VDS = 5 V)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3.Typical represents the median parameter value across the specified
frequency range for the median chip.
0.000
0.000
1.250
1.905
3.810
1.554
2.471
3.386
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD)7 V
DC
Power In (PIN) 19 dBm
Junction Temperature (TJ) 175°C
Absolute Maximum Ratings
31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00
2Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com
Specifications subject to change without notice. 1/01A
-30
-20
-10
0
10
20
30
30 31 32 33 34 35 36
Frequency (GHz)
(dB)
Typical Small Signal Performance
S-Parameters (VDS = 5 V)
S21
S11
S22
PIN (dBm)
P
OUT
(dBm)
10
12
14
16
18
20
-10 -8 -6 -4 -2 0 2 4
Output Characteristic as a
Function of Input Drive Level
(F = 35 GHz, VDS = 5 V)
Typical Performance Data
5 V .01 µF 50 pF
RF IN RF OUT
Bias Arrangement
Detail A
RF IN RF OUT
VDS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust VDS from zero to the desired value
(4 V–6 V recommended).For biasing off, reverse the biasing on procedure.
