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TIP125 / TIP126 / TIP127 — PNP Epit axial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125 / TIP126 / TIP127 Rev. 1.1.0 1
November 2014
TIP125 / TIP126 / TIP127
PNP Epitaxial Darlington Transistor
Features
Medium Power Linear Switching Applications
Complementary to TIP120 / TIP121 / TIP122
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s is n ot re commended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP125 TIP125 TO-220 3L (Single Gauge) Bulk
TIP125TU TIP125 TO-220 3L (Single Gauge) Rail
TIP126 TIP126 TO-220 3L (Single Gauge) Bulk
TIP126TU TIP126 TO-220 3L (Single Gauge) Rail
TIP127 TIP127 TO-220 3L (Single Gauge) Bulk
TIP127TU TIP127 TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP125 -60 VTIP126 -80
TIP127 -100
VCEO Collector-Emitter Voltage TIP125 -60 VTIP126 -80
TIP127 -100
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -5 A
ICP Collector Current (Pulse) -8 A
IB Base Current (DC) -120 mA
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circu i t
B
E
C
R1 R2
R1 8kΩ
R2 0.12kΩ
TIP125 / TIP126 / TIP127 — PNP Epit axial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125 / TIP126 / TIP127 Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 65
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage
TIP125 IC = -100 mA, IB = 0 -60 VTIP126 -80
TIP127 -100
ICEO Collector Cut-Off Current TIP125 VCE = -30 V, IB = 0-2
mATIP126 VCE = -40 V, IB = 0 -2
TIP127 VCE = -50 V, IB = 0 -2
ICBO Collector Cut-Off Current TIP125 VCB = -60 V, IE = 0 -1 mATIP126 VCB = -80 V, IE = 0 -1
TIP127 VCB = -100 V, IE = 0 -1
IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -2 mA
hFE DC Current Gain(1) VCE = -3 V, IC = -0.5 A 1000
VCE = -3 V, IC = -3 A 1000
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = -3 A, IB = -12 mA -2 V
IC = -5 A, IB = -20 mA -4
VBE(on) Base-Emitter On Voltage(1) VCE = -3 V, IC = -3 A -2.5 V
Cob Output Capacitance VCB = -10 V, IE = 0,
f = 0.1 MHz 300 pF
TIP125 / TIP126 / TIP127 — PNP Epit axial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125 / TIP126 / TIP127 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Output and Input Capacitance
vs. Reverse Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.1 -1 -10
100
1k
10k
VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5 IC = 250IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
10
100
1000
Cob
f = 0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Cob[pF] Cib[pF], CAPACITANC E
Cib
-1 -10 -100
-0.01
-0.1
-1
-10
TIP126
TIP127
TIP125
DC
5ms
100μs
500μs
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR -E MITTER VOLTAGE
0 25 50 75 100 125 150 175
0
15
30
45
60
75
90
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP125 / TIP126 / TIP127 — PNP Epit axial Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125 / TIP126 / TIP127 Rev. 1.1.0 4
Physical Dimensions
Figure 6. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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