UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904L-AL3-R MMBT3904G-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING 1A. L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright (c) 2011 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-012.E MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING ( Ta=25, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-base breakdown voltage VCBO IC=10A, IE=0 Collector-emitter breakdown voltage(Note) VCEO IC=1mA, IB=0 Emitter-base breakdown voltage VEBO IE=10A, IC=0 VCE(SAT)1 IC=10mA, IB=1mA Collector-emitter saturation voltage (Note) VCE(SAT)2 IC=50mA, IB=5mA VBE(SAT)1 IC=10mA, IB=1mA Base-emitter saturation voltage (Note) VBE(SAT)2 IC=50mA, IB=5mA Collector Cut-off Current ICEX VCE=30V, VEB=3V Base Cut-off Current IBL VCE=30V, VEB=3V hFE1 VCE=1V, IC=0.1mA hFE2 VCE=1V, IC=1mA DC current gain (note) hFE3 VCE=1V, IC=10mA hFE4 VCE=1V, IC=50mA VCE=1V, IC=100mA hFE5 Current gain bandwidth product fT VCE=20V, IC=10mA, f=100MHz Output Capacitance COB VCB=5V, IE=0, f=1MHz Turn on time tON VCC=3V,VBE=0.5V,IC=10mA,IB1=1mA Turn off time tOFF IB1=1B2=1mA Note: Pulse test: PW<=300s, Duty Cycle<=2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 V 40 V 6 V 0.2 V 0.3 V 0.65 0.85 V 0.95 V 50 nA 50 nA 40 70 100 300 60 30 300 MHz 4 pF 70 ns 250 ns 2 of 3 QW-R206-012.E MMBT3904 Current Gain-Bandwidth Product, fT (MHz) TYPICAL CHARACTERISTICS DC Current Gain, hFE NPN EPITAXIAL SILICON TRANSISTOR Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 5 3 Output Capacitance 6 IC=10 IB IE=0 f=1MHz 5 VBE(sat) 1 4 0.5 0.3 3 0.1 2 VCE(sat) 0.05 0.03 0.01 0.1 0.3 0.5 1 3 5 10 1 3050 100 Collector current, IC (mA) 0 1 3 5 10 30 50 100 Collector-Base Voltage, VCB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-012.E