PESD1LIN,115 - NXP - Datasheet.Directory

1. Product profile

1.1 General description

PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic

package designed to protect one automotive Local Interconne ct Network (LIN) bus line

from the damage caused by ElectroStatic Discharge (ESD) and other transients.

1.2 Features and benefits

ESD protection of one automotive LIN-bus line

Asymmetrical diode configuration ensures an optimized protection against

ElectroMagnetic Interferences (EMI) of a LIN Electronic Control Unit (ECU)

Max. peak pulse power: PPP =160W at t

p=8/20s

Low clamping voltage: VCL =40V at I

PP =1A

Ultra low leakage current: IRM <1nA

ESD protection of up to 23 kV

IEC 61000-4-2, level 4 (ESD)

IEC 61000-4-5 (surge); IPP =3A at t

p=8/20s

AEC-Q101 qualified

1.3 Applications

LIN-bus protection

Automotive applications

1.4 Quick reference data

PESD1LIN

LIN-bus ESD protection diode

Rev. 3 — 31 May 2011 Product data sheet

Table 1. Quick reference data

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage

PESD1LIN (15 V) - - 15 V

PESD1LIN (24 V) - - 24 V

Cddiode capacitance VR=0V;

f=1MHz -1317pF

Product data sheet Rev. 3 — 31 May 2011 2 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode 1 (15 V)

2 cathode 2 (24 V)

006aab041

Tabl e 3. Ordering information

Type number Package

Name Description Version

PESD1LIN SC-76 plastic surface-mounted package; 2 leads SOD323

Table 4. Marking codes

Type number Marking code

PESD1LIN AM

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PPP peak pulse power tp=8/20s[1] -160W

IPP peak pulse current tp=8/20s[1] -3A

Tjjunction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 3 — 31 May 2011 3 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

[1] Device stressed with ten non-repetitive ESD pulses.

Table 6. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

VESD electrostatic discharge

voltage IEC 61000-4-2

(contact discharge) [1] -23kV

MIL-STD-883

(human body model) -10kV

Table 7. ESD sta nd ards compliance

Standard Conditions

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Fig 1. 8/20 s pu lse waveform accord ing to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa631

100 %

90 %

30 ns 60 ns

10 %

= 0.7 ns to 1 ns

Product data sheet Rev. 3 — 31 May 2011 4 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

6. Characteristics

[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage

PESD1LIN (15 V) - - 15 V

PESD1LIN (24 V) - - 24 V

IRM reverse leakage current

PESD1LIN (15 V) VRWM =15V - <1 50 nA

PESD1LIN (24 V) VRWM =24V - <1 50 nA

VBR breakdown voltage IR=5mA

PESD1LIN (15 V) 17.1 18.9 20.3 V

PESD1LIN (24 V) 25.4 27.8 30.3 V

Cddiode capacitance VR=0V; f=1MHz - 13 17 pF

VCL clamping voltage [1]

PESD1LIN (15 V) IPP =1A - - 25 V

IPP =5A - - 44 V

PESD1LIN (24 V) IPP =1A - - 40 V

IPP =3A - - 70 V

rdif differential resistance

PESD1LIN (15 V) IR=1mA - - 225 

PESD1LIN (24 V) IR=1mA - - 300 

Tamb =25C

Fig 3. Peak pulse power as a function of exponential

pulse duration; typical values Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical

values

006aaa164

103

102

104

PPP

(W)

tp (μs)

110

103

10 102

Tj (°C)

0 20015050 100

001aaa193

0.4

0.8

1.2

PPP

PPP(25°C)

Product data sheet Rev. 3 — 31 May 2011 5 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

Fig 5. ESD clamping test setup and waveforms

006aaa166

50 Ω

vertical scale = 200 V/div

horizontal scale = 50 ns/div

unclamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform

(IEC 61000-4-2 network)

unclamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform

(IEC 61000-4-2 network)

vertical scale = 20 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div vertical scale = 20 V/div

horizontal scale = 50 ns/div

GND

450 Ω

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

D.U.T.

(Device

Under

Test)

PESD1LIN (15V)

PESD1LIN (24V)

Product data sheet Rev. 3 — 31 May 2011 6 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

7. Application information

The PESD1LIN is designed for the protection of one LIN-bus signal line from the damage

caused by ESD and surge pulses. The PESD1LIN provides a surge capability of up to

160 W per line for a 8/20 s waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the PESD1LIN as close to the input terminal or connector as possible.

2. The path length between the PESD1LIN and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protection conductors in parallel with unprotected conductor.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

Fig 6. Typical application: ESD prot ection of one automotive LIN-bus line

006aaa678

LIN

transceiver

PESD1LIN

CMASTER/SLAVE

CBAT

24 V

application (e.g. voltage regulator and microcontroller)

power application (e.g. electro motor, inductive loads)

LIN node

connector

15 V

BAT

GND

LIN

Product data sheet Rev. 3 — 31 May 2011 7 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 7. Package outline SOD323 (SC-76)

03-12-17Dimensions in mm

0.25

0.10

0.45

0.15

2.7

2.3 1.8

1.6

0.40

0.25

1.1

0.8

1.35

1.15

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

PESD1LIN SOD323 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 3 — 31 May 2011 8 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

11. Soldering

Fig 8. Reflow soldering footprint SOD323 (SC-76)

Fig 9. Wave soldering footprint SOD323 (SC-76)

0.951.65

2.2

2.1

3.05

solder lands

solder resist

occupied area

solder paste

0.5

(2×)

0.6

(2×)

0.6 (2×)0.5 (2×)

sod323_fr

Dimensions in mm

1.5 (2×)

2.9

1.2

(2×)

2.75

sod323_fw

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Product data sheet Rev. 3 — 31 May 2011 9 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD1LIN v.3 20110531 Product data sheet - PESD1LIN v. 2

Modifications: •Section 1.2 “Features and benefits”: updated.

•Figure 6: updated.

•Section 8 “Test information”: added.

•Section 13 “Legal information”: updated.

PESD1LIN v.2 20081112 Product data sheet - PESD1LIN v.1

PESD1LIN v.1 20041026 Product data sheet - -

Product data sheet Rev. 3 — 31 May 2011 10 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full da ta sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however ,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indire ct, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semico nductors’ aggregate and cumulat ive liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with app lications or customer product

design. It is customer’s sole re sponsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Producti on This document contains the product specification.

Product data sheet Rev. 3 — 31 May 2011 11 of 12

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PESD1LIN

LIN-bus ESD protection diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 31 May 2011

Document identifier: PESD1LIN

Please be aware that important notices concerning this document and the product(s)

described herei n, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information. . . . . . . . . . . . . . . . . . . . . 11

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12