TRENCHSTOPTM IKW50N60TA Series q Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C G E Features: Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s TM TRENCHSTOP and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Green Package Very soft, fast recovery anti-parallel Emitter Controlled HE diode PG-TO247-3 Applications: Main inverter Air - Con compressor PTC heater Motor drives Type IKW50N60TA VCE IC VCE(sat),Tj=25C Tj,max Marking Package 600V 50A 1.5V 175C K50T60A PG-TO247-3 IFAG IPC TD VLS 1 Rev. 2.3 17.09.2014 TRENCHSTOPTM IKW50N60TA Series q Maximum Ratings Parameter Symbol Collector-emitter voltage, Tj 25C VCE Value Unit 600 V 1) A IC 80 50 ICpul s 150 - 150 IF 80 50 IFpul s 150 VGE 20 V Short circuit withstand time VGE = 15V, VCC 400V, Tj 150C tSC 5 s Power dissipation TC = 25C Ptot 333 W Operating junction temperature Tj -40...+175 C Storage temperature Tstg -55...+150 Soldering temperature (wavesoldering only allowed at leads, 4) 1.6mm (0.063 in.) from case for 10s) Tsold 260 TC = 25C DC collector current, limited by Tjmax TC = 110C Pulsed collector current, tp limited by Tjmax 2) Turn off safe operating area, VCE 600V, Tj 175C, tp 1s TC = 25C Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax 2) TC = 100C 2) Gate-emitter voltage 3) 1) Value limited by bond wire Defined by design. Not subject to production test. Allowed number of short circuits: <1000; time between short circuits: >1s. 4) Package not recommended for surface mount application. 2) 3) IFAG IPC TD VLS 2 Rev. 2.3 17.09.2014 TRENCHSTOPTM IKW50N60TA Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit K/W Characteristic IGBT thermal resistance, junction - case RthJC 0.45 Diode thermal resistance, junction - case RthJCD 0.8 Thermal resistance, junction - ambient RthJA 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - V G E = 15 V , I C = 50 A T j =2 5 C T j =1 7 5 C - 1.5 1.9 2 - V G E = 0V , I F = 5 0 A T j =2 5 C T j =1 7 5 C - 1.65 1.6 2.05 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF Gate-emitter threshold voltage VGE(th) I C = 0. 8m A, V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V T j =2 5 C T j =1 7 5 C - - 40 3500 V A Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 50 A - 31 - S Integrated gate resistor RGint - Dynamic Characteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QGate V C E = 25 V , V G E = 0V , f= 1 MH z - 3140 - - 200 - - 93 - V C C = 48 0 V, I C =5 0 A V G E = 15 V - 310 - nC - 13 - nH - 458.3 - A LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS IC(SC) V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j 1 50 C 3 pF Rev. 2.3 17.09.2014 TRENCHSTOPTM IKW50N60TA Series q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value Unit min. Typ. max. - 26 - - 29 - - 299 - - 29 - - 1.2 - - 1.4 - - 2.6 - - 143 - ns - 1.8 - C - 27.7 - A - -671 - A/s IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=50A, VGE=0/15V, RG= 7 , L =103n H C=39pF L , C f rom Fig. E Energy losses include "tail" and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during t b d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 5 0 A, d i F / d t =1 2 80 A / s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value Unit min. Typ. max. - 27 - - 33 - - 341 - - 55 - - 1.8 - - 1.85 - - 3.65 - - 205 - ns - 4.3 - C - 40.7 - A - -449 - A/s IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=175 C, VCC=400V,IC=50A, VGE=0/15V, RG= 7 , L =103n H C=39pF L , C f rom Fig. E Energy losses include "tail" and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during t b d i r r /d t IFAG IPC TD VLS T j =1 7 5 C V R = 4 00 V , I F = 5 0 A, d i F / d t =1 2 80 A / s 4 Rev. 2.3 17.09.2014 TRENCHSTOPTM 140A IKW50N60TA Series q t p =2s 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 100A T C =80C 80A T C =110C 60A 40A 20A 0A 100Hz Ic Ic 10s 10A 50s 1ms DC 1A 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/15V, RG = 7) 10V 100V 10ms 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 300W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 80A 250W 200W 150W 100W 60A 40A 20A 50W 0W 25C 50C 75C 0A 25C 100C 125C 150C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) IFAG IPC TD VLS 5 75C 125C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) Rev. 2.3 17.09.2014 TRENCHSTOPTM 120A V G E =20V 100A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 120A 15V 13V 80A 11V 9V 60A 7V 40A 20A 100A V G E =20V 15V 13V 80A 11V 60A 9V 7V 40A 20A 0A 0A 0V 1V 2V 3V 0V 80A 60A 40A T J =175C 20A 25C 0A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) IFAG IPC TD VLS 1V 2V 3V 4V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) IC, COLLECTOR CURRENT IKW50N60TA Series q 2.5V IC =100A 2.0V I C =50A 1.5V IC =25A 1.0V 0.5V 0.0V 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 Rev. 2.3 17.09.2014 TRENCHSTOPTM IKW50N60TA Series q t d(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES t d(off) tr tf t d(on) 100ns tf tr t d(on) 10ns 10ns 0A 20A 40A 60A 80A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf tr t d(on) 10ns 25C 50C 75C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50C 100C 125C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG=7, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 7V 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.8mA) 7 Rev. 2.3 17.09.2014 TRENCHSTOPTM *) Eon and Ets include losses due to diode recovery *) E on and E ts include losses Ets* 6.0m J Eon* 4.0mJ Eoff 2.0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 8.0mJ 6.0mJ IKW50N60TA Series q due to diode recovery E ts * 5.0m J 4.0m J 3.0m J E off 2.0m J 1.0m J E on * 0.0m J 0.0mJ 0A 20A 40A 60A 80A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 7, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 50A, Dynamic test circuit in Figure E) 6 mJ *) Eon and Ets include losses due to diode recovery Ets* 3.0mJ 2.0mJ Eoff 1.0mJ Eon* 0.0mJ 25C 5 mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery Ets* 4 mJ 3 mJ Eon* 2 mJ Eoff* 1 mJ 0 mJ 50C 75C 100C 125C 150C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E) IFAG IPC TD VLS VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 50A, RG = 7, Dynamic test circuit in Figure E) 8 Rev. 2.3 17.09.2014 TRENCHSTOPTM IKW50N60TA Series q VGE, GATE-EMITTER VOLTAGE CC ies 15V iss c, CAPACITANCE 1nF 120V 480V 10V C oss Coes 100pF 5V CC res rss 0V 0nC 100nC 200nC 0V 300nC 20V 30V 40V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 12s 800A tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), SHORT CIRCUIT COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=50 A) 10V 700A 600A 500A 400A 300A 200A 100A 0A 12V 14V 16V 8s 6s 4s 2s 0s 10V 18V VGE, GATE-EMITTER VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) IFAG IPC TD VLS 10s 11V 12V 13V 14V VGE, GATE-EMITTER VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25C, TJmax<150C) 9 Rev. 2.3 17.09.2014 IKW50N60TA Series q TRENCHSTOPTM 0 10 K/W D=0.5 0.2 -1 10 K/W 0.1 R,(K/W) 0.18355 0.12996 0.09205 0.03736 0.00703 0.05 0.02 -2 10 K/W , (s) -2 7.425*10 8.34*10-3 7.235*10-4 1.035*10-4 4.45*10-5 R1 R2 0.01 C 1 = 1 /R 1 C 2 = 2 /R 2 ZthJC, TRANSIENT THERMAL IMPEDANCE ZthJC, TRANSIENT THERMAL IMPEDANCE D=0.5 0.2 0.1 -1 10 K/W 0.05 0.02 10s 100s , (s) 7.037*10-2 7.312*10-3 6.431*10-4 4.79*10-5 R1 6.53*10-2 R2 0.01 -2 10 K/W C 1 = 1 /R 1 C 2 = 2 /R 2 single pulse single pulse 1s R,(K/W) 0.2441 0.2007 0.1673 0.1879 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal impedance (D = tp / T) 1s 10s 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 5 C 350 ns Tj =175C 250 ns Tj =175C 200 ns 150 ns Tj =25C 100 ns 50 ns 0 ns 900 A/s 1100 A/s 4 C 3 C 2 C Tj =25C 1 C 0 C 900 A/s 1300 A/s diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=50A, Dynamic test circuit in Figure E) IFAG IPC TD VLS Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 300 ns 10 1100 A/s 1300 A/s diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 50A, Dynamic test circuit in Figure E) Rev. 2.3 17.09.2014 TRENCHSTOPTM -900 A/s 50 A Tj =175C -800 A/s Tj =25C 40 A -700 A/s dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT IKW50N60TA Series q 30 A Tj =25C 20 A -600 A/s -500 A/s -400 A/s Tj =175C -300 A/s 10 A -200 A/s 0A 900 A/s 1100 A/s -100 A/s 900 A/s 1300 A/s diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 50A, Dynamic test circuit in Figure E) 1300 A/s diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=50A, Dynamic test circuit in Figure E) 120A I F =100A 2.0V 100A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 1100 A/s T J =25C 175C 80A 60A 40A 50A 1.5V 25A 1.0V 0.5V 20A 0.0V 0C 0A 0V 1V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage IFAG IPC TD VLS 11 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.3 17.09.2014 TRENCHSTOPTM IKW50N60TA Series q PG-TO247-3 IFAG IPC TD VLS 12 Rev. 2.3 17.09.2014 TRENCHSTOPTM IKW50N60TA Series q i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 n r2 rn Tj (t) p(t) r1 r2 rn TC Figure A. Definition of switching times Figure D. Thermal equivalent circuit Figure B. Definition of switching losses IFAG IPC TD VLS 13 Rev. 2.3 17.09.2014 TRENCHSTOPTM IKW50N60TA Series q Revision History IKW50N60TA Revision: 2014-09-17, Rev. 2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2010-05-26 Release of final datasheet 2.2 2013-08-27 Update minor changes 2.2a 2014-01-28 Package Drawing according to Rev. 2.1 2.3 Update minor changes, figures 16, 23, 24, 25 and 26 Published by Infineon Technologies AG 81726 Munchen, Germany (c) 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 14 Rev. 2.3 17.09.2014