KAF-8300 3326 (H) x 2504 (V) Full Frame CCD Image Sensor Description The KAF-8300 Image Sensor is a 22.5 mm diagonal (Four Thirds Format) high performance color or monochrome full frame CCD (charge-coupled device) image sensor designed for a wide range of image sensing applications including digital imaging. Each pixel contains blooming protection by means of a lateral overflow drain thereby preventing image corruption during high light level conditions. For the color version, the 5.4 mm square pixels are patterned with an RGB mosaic color filter with overlying microlenses for improved color response and reproduction. Several versions of monochrome devices are available with or without microlenses. www.onsemi.com Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Architecture Full Frame CCD; with Square Pixels Total Number of Pixels 3448 (H) x 2574 (V) = approx. 8.9 Mp Number of Effective Pixels Color Device Monochrome Device 3358 (H) x 2536 (V) = approx. 8.6 Mp 3366 (H) x 2544 (V) = approx. 8.6 Mp Number of Active Pixels 3326 (H) x 2504 (V) = approx. 8.3 Mp Pixel Size 5.4 mm (H) x 5.4 mm (V) Active Image Size 17.96 mm (H) x 13.52 mm (V) 22.5 mm (Diag.), 4/3 Optical Format Aspect Ratio 4:3 Horizontal Outputs 1 Saturation Signal > 25.5 ke- Output Sensitivity 23 mV/e- Quantum Efficiency (Color) R (450 nm) G (550 nm) B (650 mm) 33% 40% 33% Quantum Efficiency (Monochrome) Microlens, Clear Glass (540 nm) Microlens, No Glass (540 nm) Microlens, AR Glass (540 nm) No Microlens, Clear G. (560 nm) 54% 60% 56% 37% Total Sensor Noise 16 e- Dark Signal < 200 e-/s Dark Current Doubling Temp. 5.8C Linear Dynamic Range 64.4 dB Linear Error at 12C 10% Charge Transfer Efficiency 0.999995 Blooming Protection (1 ms Integration Time) 1000X Saturation Exposure Maximum Date Rate 28 MHz Package 32-pin CERDIP, 0.070 Pin Spacing Cover Glass Clear or AR Coated, 2 Sides Figure 1. KAF-8300 Full Frame CCD Image Sensor Features * TRUESENSE Transparent Gate Electrode for High Sensitivity * High Resolution * High Dynamic Range * Low Noise Architecture Applications * Digitization * Medical * Scientific ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. NOTE: Parameters above are specified at T = 60C and a data rate of 28 MHz unless otherwise noted (c) Semiconductor Components Industries, LLC, 2015 October, 2017 - Rev. 3 1 Publication Order Number: KAF-8300/D KAF-8300 The sensor utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. ORDERING INFORMATION Table 2. ORDERING INFORMATION - KAF-8300 IMAGE SENSOR Part Number Description Marking Code KAF-8300-AAB-CB-AA Monochrome, No Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass (No Coatings), Standard Grade KAF-8300-AAB-CB-AE Monochrome, No Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass (No Coatings), Engineering Grade KAF-8300-AXC-CB-AA Monochrome, Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass (No Coatings), Standard Grade KAF-8300-AXC-CB-AE Monochrome, Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass (No Coatings), Engineering Grade KAF-8300-AXC-CP-AA Monochrome, Microlens, CERDIP Package (Sidebrazed), Taped Clear Cover Glass (No Coatings), Standard Grade KAF-8300-AXC-CP-AE Monochrome, Microlens, CERDIP Package (Sidebrazed), Taped Clear Cover Glass (No Coatings), Engineering Grade KAF-8300-AXC-CD-AA Monochrome, Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass with AR Coatings (Both Sides), Standard Grade KAF-8300-AXC-CD-AE Monochrome, Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass with AR Coatings (Both Sides), Engineering Grade KAF-8300-CXB-CB-AA-Offset Color (Bayer RGB), Special Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass (No Coatings), Standard Grade, Offset KAF-8300-CXB-CB-AE-Offset Color (Bayer RGB), Special Microlens, CERDIP Package (Sidebrazed), Clear Cover Glass (No Coatings), Engineering Grade, Offset KAF-8300XE Serial Number KAF-8300-AXC Serial Number KAF-8300CE Serial Number Table 3. ORDERING INFORMATION - EVALUATION SUPPORT Part Number KAF-8300-12-28-A-EVK Description Evaluation Board (Complete Kit) See the ON Semiconductor Device Nomenclature document (TND310/D) for a full description of the naming convention used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at www.onsemi.com. www.onsemi.com 2 KAF-8300 DEVICE DESCRIPTION Architecture 1 Active (CTE Monitor) 3 Dark Dummy 4 Blue Pixel Buffer 16 Active Buffer V1 V2 1163 pixels SUB OG R B GB B GR R GR 5.4 microns X 5.4 microns 4:3 Aspect Ratio GR 1162 pixels H1L RD RG VDD VOUT VSS GR 248 pixels EE A AAAAA EEAAAAA A EE A EEAAAAA A AAAAA EE A AAAAA EEAAAAA A 3326 (H) X 2504 (V) 3358 (H) X 2536 (V) 2504 Active Lines/Frame Active Image Area Effective Image Area LODT LODB Last Hccd Phase: H1 Last Vccd Phase: V2 3326 Active Pixels (typical active line format) 16 Active Buffer 4 Blue Pixel Buffer 5 Dark Dummy 5 Dummy 1 Active (CTE Monitor) 8 Dummy 4 Virtual Dummy Column 16 Active Buffer 4 Blue Pixel Buffer 8 Dark Dummy 39 Dark 6 Dark Dummy 3 Dummy 1 Active (CTE Monitor) 2 Dummy Figure 2. Block Diagram (Color) www.onsemi.com 3 H1 H2 16 Active Buffer 4 Blue Pixel Buffer 8 Dark Dummy 12 Dark 6 Dark Dummy KAF-8300 1 Active (CTE Monitor) 3 Dark Dummy 20 Active Buffer V1 V2 1163 pixels 3326 (H) X 2504 (V) 3366 (H) X 2544 (V) 248 pixels 5.4 microns X 5.4 microns 4:3 Aspect Ratio 2504 Active Lines/Frame Active Image Area Effective Image Area 1162 pixels H1L RD RG VDD VOUT VSS SUB OG LODT LODB Last Hccd Phase: H1 Last Vccd Phase: V2 3326 Active Pixels (typical active line format) 20 Active Buffer 5 Dark Dummy 5 Dummy 1 Active (CTE Monitor) 8 Dummy 4 Virtual Dummy Column 20 Active Buffer 8 Dark Dummy 39 Dark 6 Dark Dummy 3 Dummy 1 Active (CTE Monitor) 2 Dummy H1 H2 20 Active Buffer 8 Dark Dummy 12 Dark 6 Dark Dummy Figure 3. Block Diagram (Monochrome) Dummy Pixels Within the horizontal shift register there are 13, (8 + 5), leading and 5, (2 + 3), trailing additional shift phases that are not electrically associated with any columns of pixels within the vertical register. These pixels contain only horizontal shift register dark current signal and do not respond to light and therefore, have been designated as dummy pixels. For this reason, they should not be used to determine a dark reference level. Dark Reference Pixels Surrounding the periphery of the device is a border of light shielded pixels creating a dark region. Within this dark region there are light shielded pixels that include 39 trailing dark pixels on every line. There are also 12 full dark lines at the start of every frame. Under normal circumstances, these pixels do not respond to light and may be used as a dark reference. Dark Dummy Pixels Within the dark region some pixels are in close proximity to an active pixel, or the light sensitive regions that have been added for manufacturing test purposes, (CTE Monitor). In both cases, these pixels can scavenge signal depending on light intensity and wavelength. These pixels should not be used as a dark reference. These pixels are called dark dummy pixels. Within the dark region, dark dummy pixels have been identified. There are 5 leading and 14 (6 + 8) trailing dark pixels on every line. There are also 14 (6 + 8) dark dummy lines at the start of every frame along with 3 dark dummy lines at the end of each frame. Virtual Dummy Columns Within the horizontal shift register there is 4 leading shift phases that are not physically associated with a column of pixels within the vertical register. These pixels contain only horizontal shift register dark current signal and do not respond to light and therefore, have been designated as virtual dummy columns. For this reason, they also should not be used to determine a dark reference level. Active Buffer Pixels For color devices, sixteen buffer pixels adjacent to the blue pixel buffer region contain a RGB mosaic color pattern. This region is classified as active buffer pixels. These pixels are light sensitive but they are not tested for defects and www.onsemi.com 4 KAF-8300 exposure time and non-linearly dependent on wavelength. When the pixel's capacity is reached, excess electrons are discharged into the lateral overflow drain to prevent crosstalk or `blooming'. During the integration period, the V1 and V2 register clocks are held at a constant (low) level. non-uniformities. The response of these pixels will not be uniform. For monochrome devices, 20 buffer pixels adjacent to the dark dummy pixels are classified as active buffer pixels. These pixels are light sensitive but they are not tested for defects and non-uniformities. The response of these pixels will not be uniform. Charge Transport The integrated charge from each photogate is transported to the output using a two-step process. Each line (row) of charge is first transported from the vertical CCD's to a horizontal CCD register using the V1 and V2 register clocks. The horizontal CCD is presented a new line on the falling edge of V2 while H1 is held high. The horizontal CCD's then transport each line, pixel by pixel, to the output structure by alternately clocking the H1 and H2 pins in a complementary fashion. A separate connection to the last H1 phase (H1L) is provided to improve the transfer speed of charge to the floating diffusion. On each falling edge of H1 a new charge packet is dumped onto a floating diffusion and sensed by the output amplifier. Blue Pixel Buffer For color devices, four buffer pixels adjacent to any leading or trailing dark reference regions contain a blue filter and is classified as a blue pixel buffer. These pixels are light sensitive but they are not tested for defects and non-uniformities. The response of these pixels will not be uniform. Monochrome devices do not contain a blue pixel buffer. CTE Monitor Pixels Within the horizontal dummy pixel region two light sensitive test pixels (one each on the leading and trailing ends) are added and within the vertical dummy pixel region one light sensitive test pixel has been added. These CTE monitor pixels are used for manufacturing test purposes. In order to facilitate measuring the device CTE, the pixels in the CTE Monitor region in the horizontal and vertical portion is coated with blue pigment on the color version only. The monochrome device is uncoated). Horizontal Register Output Structure Charge presented to the floating diffusion (FD) is converted into a voltage and is current amplified in order to drive off-chip loads. The resulting voltage change seen at the output is linearly related to the amount of charge placed on the FD. Once the signal has been sampled by the system electronics, the reset gate (RG) is clocked to remove the signal and FD is reset to the potential applied by reset drain (RD). Increased signal at the floating diffusion reduces the voltage seen at the output pin. To activate the output structure, an off-chip load must be added to the VOUT pin of the device. See Figure 5. Image Acquisition An electronic representation of an image is formed when incident photons falling on the sensor plane create electron-hole pairs within the device. These photon-induced electrons are collected locally by the formation of potential wells at each photogate or pixel site. The number of electrons collected is linearly dependent on light level and www.onsemi.com 5 KAF-8300 H2 HCCD Charge Transfer H1 H1L VDD OG RG RD Floating Diffusion VOUT VSS Source Follower #1 Source Follower #2 Source Follower #3 Figure 4. Output Architecture (Left of Right) Output Load VDD = 15 V 0.1 mF IOUT = | 5.4 mA | VOUT 2N3904 or Equivalent Buffered Video Output 130 W 680 W NOTE: Component values may be revised based on operating conditions and other design considerations. Figure 5. Recommended Output Structure Load Diagram www.onsemi.com 6 KAF-8300 Physical Description Pin Description and Device Orientation Pin 1 Indicator SUB 1 32 N/C OG 2 31 LODT RG 3 30 V1 RD 4 29 V1 RD 5 28 V2 VSS 6 27 V2 VOUT 7 26 SUB VDD 8 25 N/C SUB 9 24 V2 H1L 10 23 V2 N/C 11 22 V1 SUB 12 21 V1 H1 13 20 SUB H1 14 19 N/C H2 15 18 N/C H2 16 17 LODB Figure 6. Pinout Diagram Table 4. PIN DESCRIPTION Pin Name Substrate 17 LODB OG Output Gate 18 N/C No Connection 3 RG Reset Gate 19 N/C No Connection 4 RD Reset Drain Bias 20 SUB Substrate 5 RD Reset Drain Bias 21 V1 Vertical Phase 1 6 VSS Output Amplifier Return 22 V1 Vertical Phase 1 7 VOUT Output 23 V2 Vertical Phase 2 8 VDD Output Amplifier Supply 24 V2 Vertical Phase 2 Pin Name 1 SUB 2 Description Description Lateral Overflow Drain Bottom 9 SUB Substrate 25 N/C No Connection 10 H1L Horizontal Phase 1, Last Gate 26 SUB Substrate 11 N/C No Connection 27 V2 Vertical Phase 2 12 SUB Substrate 28 V2 Vertical Phase 2 13 H1 Horizontal Phase 1 29 V1 Vertical Phase 1 14 H1 Horizontal Phase 1 30 V1 Vertical Phase 1 15 H2 Horizontal Phase 2 31 LODT 16 H2 Horizontal Phase 2 32 N/C 1. Wherever possible, all N/C pins (11, 18, 19, 25, 32) should be connected to GND (0 V). www.onsemi.com 7 Lateral Overflow Drain Top No Connection KAF-8300 IMAGING PERFORMANCE Table 5. OPERATING CONDITIONS (The Performance Specifications are verified using the following conditions.) Description Condition - Unless otherwise Noted Readout Time (tREADOUT) Notes 526 ms Integration Time (tINT) Includes tVoverclock & tHoverclock 33 ms Horizontal Clock Frequency 20 MHz Light Source (LED) Red, Green, Blue, Orange Mode Integrate - Readout Cycle Table 6. SPECIFICATIONS Symbol Min. Nom. Max. Unit Notes Verification Plan MinColumn 575 - - mV 1, 4 Die17 Ne-SAT 25.5 - - ke- 1, 3, 4 Design18 Q-V 22.5 23.0 - mV/e- LeLow10 LeLow33 LeHigh -10 -10 -10 - - - 10 10 10 % 2, 5 2, 5 2, 4, 5 Die17 Dark Signal (Active Area Pixels) AA_DarkSig - - 200 e-/s 4, 7 Die17 Dark Signal (Dark Reference Pixels) DR_DarkSig - - 200 e-/s 4, 7 Die17 Readout Cycle Dark Signal Dark_Read - - 15 mV/s Die17 Flush Cycle Dark Signal Dark_Flush - 43 90 mV/s Die17 Dark Signal Non-Uniformity DSNU DSNU_Step DSNU_H - - - 1.30 0.14 0.40 3.0 0.5 1.0 mV p-p DT - 5.8 - C Dark Reference Difference, Active Area DarkStep -3.5 0.15 3.5 mV 4 Die17 Total Noise Dfld_noi - - 1.08 mV 4, 9 Die17 18 Design18 Description ALL DEVICES Minimum Column Linear Saturation Signal Charge to Voltage Conversion Linearity Error Dark Signal Doubling Temperature Total Sensor Noise e- 4, 8 Die17 Design18 N - 16 - DR - 64.4 - dB 10 Design18 Horizontal Charge Transfer Efficiency HCTE 0.999990 0.999995 - % 4, 12, 20 Die17 Vertical Charge Transfer Efficiency VCTE 0.999997 0.999999 - % 4, 20 Die17 X_b 1,000 - - x ESAT 13 Design18 Vertical Bloom on Transfer VBloomF -20 - 20 mV 4 Die17 Horizontal Crosstalk H_Xtalk -20 - 20 mV 4 Die17 Horizontal Overclock Noise Hoclk_noi 0 - 1.08 mV 4 Die17 Output Amplifier Bandwidth f-3dB 88 - 159 MHz 4, 15 Die17 Output Impedance, Amplifier ROUT 100 - 180 W Hclk Feedthru VHFT - - 70 mV Reset Feedthru VRFT 500 710 1,000 mV Linear Dynamic Range Blooming Protection www.onsemi.com 8 rms Design18 Die17 4, 16 Die17 Design18 KAF-8300 Table 6. SPECIFICATIONS (continued) Description Unit Notes Verification Plan Symbol Min. Nom. Max. RRESP GRESP BRESP 260 442 230 - - - 420 638 420 Quantum Efficiency R (600 nm) G (540 nm) B (480 nm) QERED QEGREEN QEBLUE - - - 33 40 33 - - - Off-Band Response Green Inband Red Response Blue Response Red Inband Green Response Blue Response Blue Inband Red Response Green Response Gr_GRESP Gr_RRESP Gr_BRESP Rd_RRESP Rd_GRESP Rd_BRESP Bl_BRESP Bl_RRESP Bl_GRESP 362 0 0 180 0 0 90 0 0 - - - - - - - - - 630 130 260 430 120 45 420 40 120 Linearity Balance Red_Bal Blu_Bal -14 -8 6.4 0.2 14 8 % 2 Die17 Photo Response Non-Uniformity R_PRNU G_PRNU B_PRNU - - - - - - 15 15 15 % p-p 6 Die17 High Frequency Noise R_Nois GRr_Nois GBr_Nois B_Nois - - - - - - - - 2 2 2 2 % rms Red-Green Hue Shift RGHueUnif - - 10 % 11 Die17 Blue-Green Hue Shift BGHueUnif - - 12 % 11 Die17 GRr/GBr Hue Uniformity GrGbHueUnf - - 7 % 11 Die17 Green Light GRr/GBr Hue Uniformity Gr_GHueUnf - - 9 % Die17 Low Hue Uniformity RGLoHueUnf BGLoHueUnf - - - - 12 10 % Die17 GrnStreak RedStreak BluStreak - - - - - - 40 20 20 % W_GNU_Min W_GNU_Max Gr_GNU_Min Gr_GNU_Max R_GNU_Min R_GNU_Max B_GNU_Min B_GNU_Max - - - - - - - - - - - - - - - - 4 6 4 4 65 65 40 40 Chroma Test UL_Chroma UR_Chroma LL_Chroma LR_Chroma - - - - - - - - Hue Test UL_UR_Hue UL_LR_Hue UL_LL_Hue UR_LR_Hue UR_LL_Hue LR_LL_Hue - - - - - - - - - - - - COLOR DEVICES Sensitivity Red Green Blue Streak/Spot Local Green Difference White Light, min White Light, max Green Light, min Green Light, max Red Light, min Red Light, max Blue Light, min Blue Light, max www.onsemi.com 9 mV Die17 % Design18 mV Die17 Die17 % Die17 7 7 7 7 % Die17 6 6 6 6 6 6 % Die17 KAF-8300 Table 6. SPECIFICATIONS (continued) Description Notes Verification Plan Symbol Min. Nom. Max. Unit Resp 465 - 655 mV Die17 - - - - 54 60 56 37 - - - - % Design18 MONOCHROME DEVICES Sensitivity - Monochrome Quantum Efficiency Microlens, Clear Glass (540 nm) Microlens, No Glass (540 nm) Microlens, AR Glass (540 nm) No Microlens, Clear G. (560 nm) QE 1. Increasing output load currents to improve bandwidth will decrease these values. 2. Specified from 12C to 60C. 3. Saturation signal level achieved while meeting Le specification. Specified from 0C to 40C. 4. Operating temperature = 30C. 5. Worst case deviation, (from 10 mV to VSAT min), relative to a linear fit applied between 0 and 500 mV exposure. 6. Peak to peak non-uniformity test based on an average of 185 x 185 blocks. 7. Average non-illuminated signal with respect to over clocked horizontal register signal. 8. Absolute difference between the maximum and minimum average signal levels of 185 x 185 blocks within the sensor. 9. Dark rms deviation of a multi-sampled pixel as measured using the KAF-8300 Evaluation Board. 10. 20Log (VSAT / N). 11. Gradual variations in hue (red with respect to green pixels and blue with respect to green pixels) in regions of interest of 185 x 185 blocks. 12. Measured per transfer at 80% of VSAT. 13. ESAT equals the exposure required to achieve saturation. X_b represents the number of ESAT exposures the sensor can tolerate before failure. X_b characterized at 25C. 14. Video level DC offset with respect to ground at clamp position. Refer to Figure 17. 15. Last stage only. CLOAD = 10 pF. Then f-3dB = (1 / (2p ROUT CLOAD)). 16. Amount of artificial signal due to H1 coupling. 17. A parameter that is measured on every sensor during production testing. 18. A parameter that is quantified during the design verification activity. 19. Calculated value subtracting the noise contribution from the KAF-8300 Evaluation Board. 20. Process optimization has effectively eliminated vertical striations. 21. CTE = 1 - CTI. Where CTE is charge transfer efficiency and CTI is charge transfer inefficiency. CTI is the measured value. www.onsemi.com 10 KAF-8300 TYPICAL PERFORMANCE CURVES KAF-8300 Quantum Efficiency 45% R Absolute Quantum Efficiency 40% B GRr GBr 35% 30% 25% 20% 15% 10% 5% 0% 350 450 550 650 750 850 950 1,050 1,150 Wavelength (nm) Figure 7. Typical Quantum Efficiency (Color Version) KAF-8300 Quantum Efficiency 70% Absolute Quantum Efficiency 60% No Microlens, Clear Glass Microlens, Clear Glass 50% Microlens, No Glass Microlens, MAR Glass 40% 30% 20% 10% 0% 350 450 550 650 750 850 950 Wavelength (nm) Figure 8. Typical Quantum Efficiency (All Monochrome Versions) www.onsemi.com 11 1,050 1,150 KAF-8300 KAF-8300 Angle Response - White Light 1.0 0.9 Normalized Response 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Horizontal - White Light Vertical - White Light 0.1 0.0 -25 -20 -15 -10 -5 0 5 10 15 20 25 Angle (Deg) NOTE: The center location of the die is as shown. The effective optical shift is 6 center-to-edge, along the diagonal. Figure 9. Typical Angular Response (Color Version) KAF-8300 Vertical Angle Response - Green Light Normalized Response 1.0 0.8 0.6 0.4 Top Center Bottom 0.2 0.0 -30 -25 -20 -15 -10 -5 0 5 10 15 20 Incident Angle (Deg) NOTE: The effective optical shift is 6 center-to-edge, along the diagonal. Figure 10. Typical Angular Response (Monochrome with Microlens) www.onsemi.com 12 25 30 KAF-8300 DEFECT DEFINITIONS Table 7. OPERATIONAL CONDITIONS (The Defect Specifications are measured using the following conditions.) Description Test Condition Notes Integration Time (tINT) 33 ms Unless Otherwise Noted Operating Temperature 30C Unless Otherwise Noted Table 8. SPECIFICATIONS Symbol Description Definition Threshold Maximum Number Allowed Notes COLOR DEVICES BPnt33_7 Point Defect Bfld_Pnt_D Dark Point in an Illuminated Field 11% Point Defect Bfld_Pnt_B Bright Point in an Illuminated Field 7% Point Defect BPnt33_100 Dark Field, Major, Short Integration Time 10 mV Point Defect BPnt33_500 Dark Field, Major, Short Integration Time 500 mV 0 3 Point Defect BPnt333_13 Dark Field, Minor, Long Integration Time, tINT = 1/3 s 13 mV 32,500 1, 3, 4 Point Defect DR_BPnts Bright Point in the Dark Reference Region 7.5 mV 0 Cluster Defect Total_Clst A Cluster is a Group of 2 or more Defective Pixels that do not Exceed the Perpendicular Pattern Defect - 6 Total 3 Cluster Defect Dfld_Vperp Dark Field Very Long Exposure Bright Cluster where 9 or more Adjacent Point Defects Exist, Very Long Integration Time, tINT = 1 s 3.04 mV 0 3 Cluster Defect - Perpendicular Pattern Defect Dfld_Perp Bfld_Perp Total_Perp Three or more Adjacent Point Defects in the Same Color Plane, along a Row or Column - 0 2, 3 Column Defect, Illuminated Bfld_Col_D Bfld_Col_B A Column which Deviates above or below Neighboring Columns under Illuminated Conditions (> 300 mV Signal) greater that the Threshold 1.5% 1.5% 0 3 Column Defect, Dark Field Dfld_Col2 Dfld_Col4 Lo_Col_B Lo_Col_D Lo_Col_B1 Lo_Col_D1 A Column which Deviates above or below Neighboring Columns under Non-Illuminated or Low Light Level Conditions (~10 mV) greater than the Threshold 1 mV 1 mV 1 mV 1 mV 1 mV 1 mV 0 3 3 Row Defect if Row Average Deviates above Threshold 1 mV 0 3 Row Defect Dfld_Row LOD Bright Col, Dark Dark Field, Minor, Short Integration Time 7.5 mV 800 Total Points Allowed for this Group of Tests Point Defect 3 3 3 3 Dfld_LodCol Defines Functionality and Uniform Efficiency of LOD Structure 1.5 mV 0 3 GrnStreak RedStreak BluStreak Maximum Defect Density Gradient Allowed in a Color Bit Plane (Note 4) 40% 20% 20% 0 Streak Test, Color BPnt33_7 Dark Field, Minor, Short Integration Time 7.5 mV 800 Point Defect, Dark Field BPnt33_100 Dark Field, Major, Short Integration Time 100 mV 6 Point Defect, Dark Field DfBP_33_200 Dark Field, Major, Short Integration Time 200 mV 0 Point Defect, Dark Field BPnt33_500 Dark Field, Major, Short Integration Time 500 mV 0 Point Defect, Bright Field Bfld_Pnt_D Dark Point in an Illuminated Field, Short Integration Time 11% 800 Point Defect, Bright Field Bfld_Pnt_B Bright Point in an Illuminated Field, Short Integration Time 7% 800 Streak Test, Color MONOCHROME DEVICES Point Defect, Dark Field www.onsemi.com 13 KAF-8300 Table 8. SPECIFICATIONS (continued) Description Symbol Threshold Maximum Number Allowed Bright Point in the Dark Reference Region 7.5 mV 0 13 mV 32,500 Definition Notes MONOCHROME DEVICES Point Defect, Dark Reference DR_BPnts Dim Points, Dark Field BPnt333_13 Dark Field, Minor, Long Integration Time, tINT = 1/3 s Total Points Bright and Dark Points BPnt33_7 + Bfld_Pnt_D + Bfld_Pnt_B - 800 - 6 3.04 mV 0 Cluster Defect Total_Clst A Cluster is a Group of 2 or 10 Adjacent Defective Dark or Bright Points Perpendicular Pattern Defect Total_Perp Dark Field Very Long Exposure Bright Cluster where 9 or more Adjacent Point Defects Exist, Very Long Integration Time, tINT = 1 s Column Defect, Bright Field Bfld_Col_D Bfld_Col_B A Column which Deviates above or below Neighboring Columns under Illuminated Conditions (> 300 mV Signal) greater that the Threshold 1.5% 1.5% 0 Column Defect, Dark Field Dfld_Col2 Dfld_Col4 Lo_Col_B Lo_Col_D Lo_Col_B1 Lo_Col_D1 A Column which Deviates above or below Neighboring Columns under Non-Illuminated or Low Light Level Conditions (~10 mV) greater than the Threshold 1 mV 1 mV 1 mV 1 mV 1 mV 1 mV 0 Row Defect if Row Average Deviates above Threshold 1 mV 0 1.5 mV 0 Row Defect LOD Bright Col, Dark Dfld_Row Dfld_LodCol Defines Functionality and Uniform Efficiency of LOD Structure 1. This parameter is only a quality metric and these points will not be considered for cluster and point criteria. 2. For the color version of this device, the green pixels in a red row (GR) are considered a different color plane than the green pixels in a blue row (GB). For monochrome version the entire active area is treated as a single color plane. 3. Operating temperature = 30C. 4. As the gradient threshold is defined as 8.5 mV maximum across a 16 x 16 pixel region about each pixel. www.onsemi.com 14 KAF-8300 OPERATION Table 9. ABSOLUTE MAXIMUM RATINGS Description (Note 9) Symbol Minimum Maximum Unit Notes Diode Pin Voltages VDIODE -17.5 17.5 V 1, 2 Gate Pin Voltages VGATE1 -13.5 13.5 V 1, 3 V1-2 -13.5 13.5 V 4 Non-Overlapping Gate Voltages Vg-g -13.5 13.5 V 5 V1, V2 - LOD Voltages VVVL -13.5 13.5 V 6 Output Bias Current IOUT - -30 mA 7 LODT Diode Voltage VLODT -13.0 13.0 V 8 LODB Diode Voltage VLODB -18.0 18.0 V 8 Operating Temperature TOP -10 70 C 10 Guaranteed Temperature of Performance TSP 0 60 C 11 Overlapping Gate Voltages Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Referenced to pin SUB. 2. Includes pins: RD, VDD, VSS, and VOUT. 3. Includes pins: V1, V2, H1, H1L, H2, RG, OG. 4. Voltage difference between overlapping gates. Includes: V1 to V2; H1, H1L to H2; H1L to OG; V1 to H2. 5. Voltage difference between non-overlapping gates. Includes: V1 to H1, H1L; V2, OG to H2. 6. Voltage difference between V1 and V2 gates and LODT, LODB diode. 7. Avoid shorting output pins to ground or any low impedance source during operation. Amplifier bandwidth increases at higher currents and lower load capacitance at the expense of reduced gain (sensitivity). Operation at these values will reduce MTF. 8. V1, H1, V2, H2, H1L, OG, and RD are tied to 0 V. 9. Absolute maximum rating is defined as a level or condition that should not be exceeded at any time per the description. If the level or condition is exceeded, the device will be degraded and may be damaged. 10. Noise performance will degrade at higher temperatures. 11. See section for Imaging Performance Specifications. Power-Up Sequence The sequence chosen to perform an initial power-up is not critical for device reliability. A coordinated sequence may minimize noise and the following sequence is recommended: 1. Connect the ground pins (SUB). 2. Supply the appropriate biases and clocks to the remaining pins. Table 10. DC BIAS OPERATING CONDITIONS Symbol Minimum Nominal Maximum Unit Maximum DC Current (mA) RD 11.3 11.5 11.7 V IRD = 0.01 Output Amplifier Return VSS 1.05 1.25 1.45 V ISS = -3.0 Output Amplifier Supply VDD 14.5 15.0 15.5 V IOUT + ISS Substrate SUB - GND - V -0.01 Output Gate OG -3.0 -2.8 -2.6 V 0.1 Lateral Drain LODT, LODB 9.5 9.75 10.0 V 0.2 2 IOUT -3 -5 -8 mA - 1 Description Reset Drain Video Output Current 1. An output load sink must be applied to VOUT to activate output amplifier - see Figure 5. 2. Maximum current expected up to saturation exposure (ESAT). www.onsemi.com 15 Notes 2 KAF-8300 AC Operating Conditions Table 11. CLOCK LEVELS Symbol Level Min. Nom. Max. Unit Effective Capacitance Notes V1 Low Level V1L Low -9.5 -9.25 -9.0 V 76 nF 1 V1 High Level V1H High 2.4 2.6 2.85 V V2 Low Level V2L Low -9.5 -9.25 -9.0 V V2 High Level V2H High 2.4 2.6 2.8 V RG, H1, H2, Amplitude RGAMP H1AMP H2AMP Amplitude 5.5 6.0 6.5 V RG = 7 pF H1 = 224 pF H2 = 168 pF 1 H1L, Amplitude H1LAMP Amplitude 7.5 8.0 8.5 V 7 pF 1 H1 Low Level H1LOW Low -4.7 -4.5 -4.3 V H1L Low Level H1LLOW Low -6.7 -6.5 -6.3 V H2 Low Level H2LOW Low -5.2 -5.0 -4.8 V RG Low Level RGLOW Low 1.8 2.0 2.2 V Description 1 81 nF 1 1 1 1 1. All pins draw less than 10 mA DC current. Capacitance values relative to SUB (substrate). Table 12. CLOCK VOLTAGE DETAIL CHARACTERISTICS Description Symbol Min. Nom. Max. Unit Notes V1 High-Level Variation V1HH - 0.50 1.0 V High-Level Coupling V2 High-Level Variation V2HL - 0.28 1.0 V High-Level Coupling V2 Low-Level Variation V2LH - 0.46 1.0 V Low-Level Coupling V1 Low-Level Variation V1LL - 0.14 1.0 V Low-Level Coupling V1-V2 Cross-Over V1CR -2.0 -0.5 1.0 V Referenced to Ground H1 High-Level Variation H1HH - 0.30 1.0 V H1 High-Level Variation H1HL - 0.07 1.0 V H1 Low-Level Variation H1LH - 0.16 1.0 V H1 Low-Level Variation H1LL - 0.25 1.0 V H2 High-Level Variation H2HH - 0.40 1.0 V H2 High-Level Variation H2HL - 0.06 1.0 V H2 Low-Level Variation H2LH - 0.10 1.0 V H2 Low-Level Variation H2LL - 0.27 1.0 V H1-H2 Cross-Over H1CR1 -3.0 -1.23 0 V Rising Side of H1 H1-H2 Cross-Over H1CR2 -3.0 -0.59 0 V Falling Side of H1 H1L High-Lever Variation H1LHH - 0.64 1.0 V H1L High-Lever Variation H1LHL - 0.32 1.0 V H1L Low-Lever Variation H1LLH - 0.27 1.0 V H1L Low-Lever Variation H1LLL - 0.23 1.0 V H1LCR1 -1.0 - -3.0 V RG High-Level Variation RGHH - 0.19 1.0 V RG High-Level Variation RGHL - 0.20 1.0 V RG Low-Level Variation RGLH - 0.11 1.0 V RG Low-Level Variation RGLL - 0.30 1.0 V H1L-H2 Cross-Over Rising Side of H1L 1. H1, H2 clock frequency: 28 MHz. The maximum and minimum values in this table are supplied for reference. The actual clock levels were measured using the KAF-8300 Evaluation Board. Testing against the device performance specifications is performed using the nominal values. www.onsemi.com 16 KAF-8300 Capacitance Equivalent Circuit CfV12 V1 V2 CfV2 CfV1 SUB CfH1L H1L RH1LH1 H2 H1 CfH12 CfH1 CfH2 Notes: 1. The external pin names are actual pins on this image sensor. See the pinout diagram (Figure 6) for more information. 2. The components shown in this schematic model do not correspond to actual components inside the image sensor. Figure 11. Equivalent Circuit Model Table 13. Parameter Value (Typical) Unit CfV1 61 nF CfV12 15 nF CfV2 67 nF CfH1 153 pF CfH12 36 pF CfH2 97 pF CfH1L 7 pF RH1LH1 52 kW www.onsemi.com 17 KAF-8300 TIMING Table 14. REQUIREMENTS AND CHARACTERISTICS Description Symbol Minimum Nominal Maximum Unit Notes H1, H2 Clock Frequency fH - - 28 MHz 1, 2 V1, V2 Clock Frequency fV - - 125 kHz 2 2 Pixel Period (1 Count) te 35.7 - - ns H1, H2 Set-up Time tHS 1 - - ms H1L-VOUT Delay tHV 0 3 - ns RG-VOUT Delay tRV 0 1 - ns tREADOUT 526 - - ms Integration Time tINT - - - Line Time tLINE 189.2 - - ms 4 Readout Time 1. 2. 3. 4. 5. 6. 4, 5 3, 4 50% duty cycle values. CTE will degrade above the nominal frequency. Integration time is user specified. Longer times will degrade noise performance. tREADOUT = tLINE 2574 lines, includes tVoverclock & tHoverclock. See Figure 19 for a detailed description. Table 15. CLOCK SWITCHING CHARACTERISTICS Description Symbol Min. Nom. Max. Unit Notes V1 Rise Time tV1r - 0.26 1 ms 3 V2 Rise Time tV2r - 0.55 1 ms 3 V1 Fall Time tV1f - 0.43 1 ms 3 V2 Fall Time tV2f - 0.31 1 ms 3 V1 Pulse Width tV1w 5.0 - - ms 4, 5 V2 Pulse Width tV2w 3.0 - - ms 4, 5 H1 Rise Time tH1r - 9.0 10 ns 3 H2 Rise Time tH2r - 6.9 10 ns 3 H1 Fall Time tH1f - 5.8 10 ns 3 H2 Fall Time tH2r - 5.4 10 ns 3 tH1w, tH2w 14 18 22 ns H1L Rise Time tH1Lr - 1.8 4 ns 3 H1L Fall Time tH1Lf - 2.5 4 ns 3 H1L Pulse Width tH1Lw 14 19 22 ns RG Rise Time tRGr - 2.0 4 ns 3 RG Fall Time tRGf - 2.2 4 ns 3 RG Pulse Width tRGw - 6.7 - ns 2 H1-H2 Pulse Width 1. H1, H2 clock frequency: 28 MHz. The maximum and minimum values in this table are supplied for reference. The actual clock timing was measured using the KAF-8300 Evaluation Board. Testing against the device performance specifications is performed using the nominal values. 2. RG should be clocked continuously. 3. Relative to the pulse width (based on 50% of high/low levels). 4. CTE 5. Longer times will degrade noise performance. www.onsemi.com 18 KAF-8300 Edge Alignment tH1w tH2w H1HH H2HH H2HL H1HL H1 H2 100% 100% 90% 90% H2 H2 H1CR2 H1CR1 50% 50% H1 H1 10% 0% 10% 0% H1LH tH1r H1LL tH1f H2LH tH2r H2LL Figure 12. H1 and H2 Edge Alignment tH1Lw H1LHH H1LHL 100% 90% H1LCR1 50% H1L H2 10% 0% tH1Lr tH1Lf H1LLH H1LLL Figure 13. H1L and H2 Edge Alignment www.onsemi.com 19 tH2f KAF-8300 Frame Timing tINT Line V1 tREADOUT 1 2 3 2573 2574 V2 H2 H1, H1L Figure 14. Frame Timing (Minimum) Frame Timing Detail V1HH tV1w tV2w V1 V2 100% 90% V2HL V1CR (Referenced to Ground) 50% 10% 0% tr V2LH V1LL tf Figure 15. Frame Timing Edge Alignment www.onsemi.com 20 te Quantity Grouping: Pixel Count: RG H2 H1, H1L V2 V1 tHS 28 27 24 23 22 19 18 14 13 12 11 1 II II EE II EE EE EE EE AA AA AA tLINE EE EE EE EE II II II II II II II II II (39) Dark Pixels 3391 3390 3389 (8) Dark Dummy Pixels 3386 3385 (4) Blue Pixel Buffer 3370 3369 3368 3367 3366 3365 (16) Active Buffer Pixels 47 46 45 44 43 (3326) Active Pixels (16) Active Buffer Pixels (4) Blue Pixel Buffer (5) Dark Dummy Pixels (5) Dummy Pixels 5 4 (1) CTE Monitor Pixels (8) Dummy Pixels (4) Virtual Dummy Columns Figure 16. Line Timing www.onsemi.com 21 * Lines 7-18 are lines mostly composed of dark reference pixels. ** Lines 31-46 and 2555-2570 are lines mostly composed of photoactive buffer pixels. *** Lines 27-30 and 2551-2554 are lines mostly composed of blue photoactive buffer pixels. (6) Dark Dummy Pixels EEEE EEEE For lines 1 thru 1163 are as shown above with the following exception: pixel 13 are denoted as a test pixel, of which all are dark dummy except for one photoactive pixel for which row location may vary. For lines 1412 thru 2570 are as shown above with the following exception: pixel 13 are denoted as a dark dummy pixels for these lines. **** Lines 1-6, 19-26, and 2571-2574 are lines mostly composed of dark dummy pixels and are not to be used for imaging purposes or as a dark reference. 3438 3437 3436 test 3398 3397 3396 3395 The device output for the other lines are detailed below: 3448 3447 3446 3445 3444 3443 3442 3441 KAF-8300 has 2574 lines (rows) in a single frame. Line shown above represents the device output for lines 1164-1411 only. KAF-8300 Line Timing (2) Dummy Pixels (1) CTE Monitor Pixels (3) Dummy Pixels NOTE: Schematic reference regions that contain a blue filter represent the color version only; monochrome version is uncoated for these pixels. KAF-8300 Pixel Timing te tGRw 1 Count RG RGLow RGAMP H1AMP H1 H1Low H2 H2Low H1L H1LLow tHV tRV VOUT VRFT VODC VDARK + VHFT VSAT GND Figure 17. Pixel Timing Pixel Timing Detail tRGw RGHL RGHH 100% 90% RG 50% 10% 0% tRGr tRGf RGLL Figure 18. Pixel Timing Detail www.onsemi.com 22 RGLH H2AMP H1LAMP KAF-8300 MODE OF OPERATION Power-Up Flush Cycle tINT tVflush tREADOUT V2 2574+64 (min) V1 te H2 3448 (min) H1, H1L Figure 19. Power-Up Flush Cycle www.onsemi.com 23 KAF-8300 MECHANICAL INFORMATION Visual Mechanical Specifications Table 16. LASER MARK Item Description Device Name KAF-8300CE, KAF-8300XE, KAF-8300-AXC (Multiple versions available). See Ordering Information section of this document. Serial Number nnn -a numeric field containing a maximum of three characters denoting a unique unit identifier for a device from the before mentioned production lot. The start of the sequence starts with "1". "001" is not a valid marking. NOTE: All markings shall be readable, consistent in size with no unusual debris left on the package. Table 17. ASSEMBLY/PACKAGE INTEGRITY Criteria Description Cracks None allowed. Corner and Edge Chip-Outs None - exceeding 0.020 (0.50 mm). Chip-Outs Exposing Buried Metal Traces None allowed. Chip-Outs, Other None allowed deeper than 50% of the ceramic layer thickness in which it resides. Scratches None - that exceed 0.020 (0.50 mm) in the major dimension and are deeper than 50% of the ceramic layer thickness in which it resides. Lead Conditions No bent, missing, damaged, or short leads. No lead cut-off burrs exceeding 0.005 (0.13 mm) in the dimension away from the lead. Internal Appearance and Die Condition Local Non-Uniformity: Local Non-Uniformity region (LNU) is allowed whose size is not greater than 200 mm2 within the effective image area. Inspection equipment for these steps are performed using a microscope 7-50X and direct lighting (ring-light). LNU is described as a spot or streak that tends to change from light to dark in appearance as the operator rotates the part under angled lighting conditions. These non-uniformities are not visible or very hard to see under direct lighting. They tend to disappear or become much less visible under higher magnification. Conditions Other than LNU: No scratches, digs, contamination, marks, or blemishes that is attached to the die that touches 9 or more pixels in the effective image area. No loose contamination allowed when viewed at 7X and 50X magnification. No scratches, digs, contamination, marks, or blemishes greater than 10 mm are allowed on the bottom side of the cover glass region that is contained in or extends into the effective image area. Tools used to verify are 7X and 50X magnification. Table 18. GLASS Criteria Description Tilt The reject condition is when the glass is incorrectly seated on the package or is not parallel to glass seal area. ("parallel" is defined as 0.25 mm maximum end to end). Seal Glass seal must be greater than 50% of the width of the epoxy bond line and must not extend over the ceramic package. Alignment There are 4 "+" fiducials on the corners the die that must not be covered by the epoxy light shield. The 4 "+" marks must be in total view when the lid is placed looking directly down on the device with a microscope. All 4 "+" alignment marks are required to be visible in their entirety with a zero clearance tolerance. Chips None allowed. Appearance No fogged cover allowed. Contamination No immobile scratches, digs, contamination, marks, or blemishes are allowed on the cover glass region that is contained in or extends into the effective image area. Within the effective image area, the limit for such conditions is 10 mm or less. This criterion pertains to either the top or the bottom glass surface. Tools used to verify are 7X and 50X magnification. www.onsemi.com 24 KAF-8300 Completed Assembly Figure 20. Completed Assembly (1 of 2) www.onsemi.com 25 KAF-8300 Figure 21. Completed Assembly (2 of 2) www.onsemi.com 26 KAF-8300 Cover Glass Clear Cover Glass, AR Coated (Both Sides) - Specification 1. Scratch and Dig: 10 micron max 2. Substrate Material Schott D263T Eco or Equivalent 3. Multilayer Anti-Reflective Coating Table 19. Wavelength Total Reflectance 420-450 2% 450-630 1% 630-680 2% Transmission (%) Clear Cover Glass - Specification 1. Scratch and Dig: 10 micron max 2. Substrate Material Schott D263T Eco or Equivalent 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 300 350 400 450 500 550 600 650 700 750 800 Wavelength (nm) Figure 22. Clear Cover Glass Transmission (Typical) www.onsemi.com 27 850 900 KAF-8300 REFERENCES For information on ESD and cover glass care and cleanliness, please download the Image Sensor Handling and Best Practices Application Note (AN52561/D) from www.onsemi.com. For information on device numbering and ordering codes, please download the Device Nomenclature technical note (TND310/D) from www.onsemi.com. For information on Standard terms and Conditions of Sale, please download Terms and Conditions from www.onsemi.com. For information on soldering recommendations, please download the Soldering and Mounting Techniques Reference Manual (SOLDERRM/D) from www.onsemi.com. For quality and reliability information, please download the Quality & Reliability Handbook (HBD851/D) from www.onsemi.com. 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