EGP20A thru EGP20G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES * Superectifier structure for high reliability condition SUPERECTIFIER * Cavity-free glass-passivated junction (R) * Ultrafast reverse recovery time * Low forward voltage drop * Low leakage current * Low switching losses, high efficiency * High forward surge capability DO-204AC (DO-15) * Solder dip 275 C max. 10 s, per JESD 22-B106 * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 50 V to 400 V IFSM 75 A trr 50 ns VF 0.95 V, 1.25 V TJ max. 150 C MECHANICAL DATA Case: DO-204AC, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V Maximum RMS voltage VRMS 35 70 105 140 210 280 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A TJ, TSTG - 65 to + 150 C Operating and storage temperature range Document Number: 88583 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EGP20A thru EGP20G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 2.0 A Maximum DC reverse current at rated DC blocking voltage SYMBOL EGP20A EGP20B VF EGP20C EGP20D EGP20F 0.95 EGP20G UNIT 1.25 TA = 25 C V 5.0 IR A TA = 125 C 100 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance 4.0 V, 1 MHz CJ 50 ns 70 45 pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance EGP20A EGP20B EGP20C EGP20D RJA (1) 40 RJL (1) 15 EGP20F EGP20G UNIT C/W Note (1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE EGP20D-E3/54 0.452 54 4000 13" Diameter paper tape and reel EGP20D-E3/73 0.452 73 2000 Ammo pack packaging EGP20DHE3/54 (1) 0.452 54 4000 13" Diameter paper tape and reel EGP20DHE3/73 (1) 0.452 73 2000 Ammo pack packaging Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 90 Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 2.0 1.0 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 75 60 45 30 15 0 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88583 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EGP20A thru EGP20G Vishay General Semiconductor 100 EGP20A thru EGP20D EGP20F and EGP20G Instantaneous Reverse Leakage Current (A) Instantaneous Forward Current (A) 100 TJ = 150 C 10 TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C 0.01 0.2 TJ = 150 C 10 TJ = 125 C TJ = 100 C 1 0.1 TJ = 25 C 0.01 0.001 0.4 0.6 0.8 1.0 1.2 0 20 40 60 Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics 140 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p EGP20A thru EGP20D 120 10 Junction Capacitance (pF) Instantaneous Reverse Leakage Current (A) 100 Percent of Peak Reverse Voltage (%) 100 TJ = 150 C TJ = 125 C 1 TJ = 100 C 0.1 0.01 TJ = 25 C 100 80 60 40 20 0.001 EGP20A thru EGP20D EGP20F and EGP20G 0 0 20 40 60 80 100 0.1 1 10 100 Percent of Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 7 - Typical Junction Capacitance 1000 100 100 EGP20F and EGP20G Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 80 Instantaneous Forward Voltage (V) TJ = 150 C 10 TJ = 125 C 1 TJ = 100 C 0.1 0.01 0.2 TJ = 25 C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Transient Thermal Impedance Document Number: 88583 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 EGP20A thru EGP20G Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 88583 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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