TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP32 / TIP32A / TIP32C Rev. 1.1.0
November 2014
TIP32 / TIP32A / TIP32C
PNP Epitaxial Silicon Transistor
Features
Medium Power Linear Switching Applications
Complementary to TIP31 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating co nd iti ons an d s tres si ng the parts to these levels is not recommended. In add i-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP32 TIP32 TO-220 3L (Single Gauge) Bulk
TIP32A TIP32A TO-220 3L (Single Gauge) Bulk
TIP32ATU TIP32A TO-220 3L (Single Gauge) Rail
TIP32C TIP32C TO-220 3L (Single Gauge) Bulk
TIP32CTU TIP32C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP32 -40 VTIP32A -60
TIP32C -100
VCEO Collector-Emitter Voltage TIP32 -40 VTIP32A -60
TIP32C -100
VEBO Emitter-Base Vo ltage -5 V
ICCollector Current (DC) -3 A
ICP Collector Current (Pulse) -5 A
IBBase Current -3 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP32 / TIP32A / TIP32C Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 40
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1)
TIP32 IC = -30 mA, IB = 0 -40 V TIP32A -60
TIP32C -100
ICEO Collector Cut-Off Current TIP32 /
TIP32A VCE = -30 V, IB = 0-0.3
mA
TIP32C VCE = -60 V, IB = 0-0.3
ICES Collector Cut-Off Current TIP32 VCE = -40 V, VEB = 0 -200
μA TIP32A VCE = -60 V, VEB = 0 -200
TIP32C VCE = -100 V, VEB = 0 -200
IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -1 mA
hFE DC Current Gain(1) VCE = -4 V, IC = -1 A 25
VCE = -4 V, IC =- 3 A 10 50
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = -3 A, IB = -375 mA -1.2 V
VBE(on) Base-Emitter On Voltage(1) VCE = -4 V, IC = -3 A -1.8 V
fT Current Gain Bandwidth Product VCE = -10 V, IC = -500 mA,
f = 1 MHz 3.0 MHz
TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP32 / TIP32A / TIP32C Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-1 -10 -100 -1000 -10000
1
10
100
1000 VCE = -4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
-10
-100
-1000
-10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-10 -100
-0.1
-1
-10
100μs
TIP32C VCEO MAX.
TIP32B VCEO MAX.
TIP32A VCEO MAX.
TIP32 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR- EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
45
50
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP32 / TIP32A / TIP32C — PNP Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP32 / TIP32A / TIP32C Rev. 1.1.0 4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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Rev. I72
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