1N5417, 1N5418 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES * Glass passivated junction * Hermetically sealed package * Low reverse current * Soft recovery characteristics * Low forward voltage drop * High pulse current capability 949588 DESIGN SUPPORT TOOLS * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 click logo to get started Models Available APPLICATIONS MECHANICAL DATA * Fast rectification diode Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS 1N5418 1N5418TR 2500 per 10" tape and reel MINIMUM ORDER QUANTITY 12 500 1N5418 1N5418-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE 1N5417 VR = 200 V; IF(AV) = 3 A SOD-64 1N5418 VR = 400 V; IF(AV) = 3 A SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Non repetitive reverse avalanche energy TEST CONDITION PART SYMBOL VALUE UNIT 1N5417 VR = VRRM 200 V 1N5418 VR = VRRM 400 V tp = 10 ms, half sine wave IFSM 100 A l = 10 mm, TL = 25 C IF(AV) 3 A I(BR)R = 1 A ER 20 mJ Tj = Tstg -55 to +175 C See electrical characteristics Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W Rev. 1.5, 21-Feb-18 Document Number: 86097 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5417, 1N5418 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 3 A VF - - 1.1 V IF = 9 A VF - - 1.5 V VR = VRRM IR - - 1 A VR = VRRM, Tj = 100 C IR - - 20 A IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - 75 100 ns Forward voltage Reverse current Reverse recovery time PART 40 3.5 IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 30 20 l l 10 TL = constant VR = VRRM half sinewave 3.0 2.5 RthJA = 25 K/W I = 10 mm 2.0 1.5 RthJA = 70 K/W PCB: d = 25 mm 1.0 0.5 0 0 0 5 10 15 20 25 30 l - Lead Length (mm) 949466 0 Fig. 1 - Max. Thermal Resistance vs. Lead Length 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (C) 16388 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100 10 IR - Reverse Current (A) IF - Forward Current (A) VR = VRRM Tj = 175 C 1 Tj = 25 C 0.1 0.01 100 10 1 25 0.001 0 16387 0.5 1.0 1.5 2.0 2.5 VF - Forward Voltage (V) Fig. 2 - Max. Forward Current vs. Forward Voltage 16389 50 75 100 125 150 175 Tj - Junction Temperature (C) Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.5, 21-Feb-18 Document Number: 86097 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5417, 1N5418 Vishay Semiconductors 120 180 VR = VRRM 160 f = 1 MHz CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) www.vishay.com 140 120 PR-Limit at 100 % VR 100 80 60 PR-Limit at 80 % VR 40 20 80 60 40 20 0 0.1 0 25 16390 100 50 75 100 125 150 175 Tj - Junction Temperature (C) 10 100 VR - Reverse Voltage (V) 16391 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Zthp - Thermal Resist. for Pulse Cond. (K/W) 1 Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 VRRM = 600 V RthJA = 70 K/W 100 Tamb = 25 C tp/T = 0.5 100 C 0.2 10 45 C 0.1 70 C 0.05 0.02 0.01 1 10-4 10-3 10-2 10-1 10-0 101 102 tp - Pulse Length (s) 949562 100 101 102 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Rev. 1.5, 21-Feb-18 Document Number: 86097 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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