STP60NS04Z N-CHANNEL CLAMPED 10m - 60A TO-220 FULLY PROTECTED MESH OVERLAYTM MOSFET TYPE STP60NS04Z VDSS RDS(on) ID CLAMPED <0.015 60 A TYPICAL RDS(on) = 0.010 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION TEMPERATURE 3 1 DESCRIPTION This fully clamped Mosfet is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ABS, SOLENOID DRIVERS MOTOR CONTROL DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDG VGS ID ID IDG IGS IDM(*) Ptot VESD(G-S) VESD(G-D) VESD(D-S) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Gate Current (continuous) Gate SourceCurrent (continuous) Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate-Source ESD (HBM - C = 100pF, R=1.5 k) Gate-Drain ESD (HBM - C = 100pF, R=1.5 k) Drain-source ESD (HBM - C = 100pF, R=1.5 k) Storage Temperature Max. Operating Junction Temperature Value CLAMPED CLAMPED CLAMPED 60 42 50 50 240 140 0.93 2 4 4 -65 to 175 -40 to 175 Unit V V V A A mA mA A W W/C kV kV kV C C (*) Pulse width limited by safe operating area. November 2002 . 1/8 STP60NS04Z THERMAL DATA Rthj-case Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Typ Max Typ 1.07 0.85 62.5 0.5 300 C/W C/W C/W C/W C Max Value Unit AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 60 A EAS Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 30 V) 550 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Clamped Voltage ID = 1 mA, VGS = 0 -40 < TJ < 175 oC IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = 16 V VDS = 16 V TJ =150 oC TJ =175 oC 50 100 A A IGSS Gate-body Leakage Current (VDS = 0) VGS = 10 V VGS = 16 V TJ =175 oC TJ =175 oC 50 150 A A VGSS Gate-Source Breakdown Voltage IGS = 100 A V(BR)DSS 33 V 18 V ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 1 mA -40 < TJ < 150 oC RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 16 V ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 1.7 3 4.2 V 11 10 15 14 m m ID = 30 A ID = 30 A 60 A DYNAMIC Symbol 2/8 Parameter Test Conditions Min. Typ. 20 30 gfs (*) Forward Transconductance VDS>ID(on)xRDS(on)max ID=30A Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2500 800 150 Max. Unit S 3400 1100 200 pF pF pF STP60NS04Z ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Qg Qgs Qgd Parameter Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD= 16 V ID= 60 A VGS= 10V Typ. Max. Unit 68 15 19 100 nC nC nC Typ. Max. Unit 85 145 90 110 180 120 ns ns ns Typ. Max. Unit 60 240 A A 1.5 V SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. ID = 60 A Vclamp = 30 V RG = 4.7, VGS = 10 V (Inductive Load, Figure 5) SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (*) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 60 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/s ISD = 60 A VDD = 25 V Tj = 150C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. VGS = 0 65 0.15 4.5 ns C A (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STP60NS04Z Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP60NS04Z Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Zero Gate Voltage Drain Current vs Temperature Source-drain Diode Forward Characteristics. . . 5/8 STP60NS04Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP60NS04Z TO-220 MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.10 16.73 0.633 16.40 0.645 0.658 L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 DIA 3.75 3.85 0.147 0.151 7/8 STP60NS04Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8