LM2736YMKX - Texas Instruments High-Performance Analog

VIN VIN

BOOST

GND

VOUT

C3 L1

OFF

LM2736

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SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

LM2736 Thin SOT 750mA Load Step-Down DC-DC Regulator

Check for Samples: LM2736

1FEATURES DESCRIPTION

The LM2736 regulator is a monolithic, high frequency,

23• Thin SOT-6 Package PWM step-down DC/DC converter in a 6-pin Thin

• 3.0V to 18V Input Voltage Range SOT package. It provides all the active functions to

• 1.25V to 16V Output Voltage Range provide local DC/DC conversion with fast transient

response and accurate regulation in the smallest

• 750mA Output Current possible PCB area.

• 550kHz (LM2736Y) and 1.6MHz (LM2736X) With a minimum of external components and online

Switching Frequencies design support through WEBENCH®, the LM2736 is

• 350mΩNMOS Switch easy to use. The ability to drive 750mA loads with an

• 30nA Shutdown Current internal 350mΩNMOS switch using state-of-the-art

• 1.25V, 2% Internal Voltage Reference 0.5µm BiCMOS technology results in the best power

density available. The world class control circuitry

• Internal Soft-Start allows for on-times as low as 13ns, thus supporting

• Current-Mode, PWM Operation exceptionally high frequency conversion over the

• WEBENCH®Online Design Tool entire 3V to 18V input operating range down to the

minimum output voltage of 1.25V. Switching

• Thermal Shutdown frequency is internally set to 550kHz (LM2736Y) or

1.6MHz (LM2736X), allowing the use of extremely

APPLICATIONS small surface mount inductors and chip capacitors.

• Local Point of Load Regulation Even though the operating frequencies are very high,

efficiencies up to 90% are easy to achieve. External

• Core Power in HDDs shutdown is included, featuring an ultra-low stand-by

• Set-Top Boxes current of 30nA. The LM2736 utilizes current-mode

• Battery Powered Devices control and internal compensation to provide high-

performance regulation over a wide range of

• USB Powered Devices operating conditions. Additional features include

• DSL Modems internal soft-start circuitry to reduce inrush current,

• Notebook Computers pulse-by-pulse current limit, thermal shutdown, and

output over-voltage protection.

Typical Application Circuit Efficiency vs Load Current "X"

VIN = 5V, VOUT = 3.3V

1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2WEBENCH is a registered trademark of Texas Instruments.

3All other trademarks are the property of their respective owners.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

BOOST

GND

VIN

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

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Connection Diagram

Figure 1. 6-Lead SOT Figure 2. Pin 1 Indentification

See Package Number DDC (R-PDSO-G6)

PIN DESCRIPTIONS

Pin Name Function

1 BOOST Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is connected between the

BOOST and SW pins.

2 GND Signal and Power ground pin. Place the bottom resistor of the feedback network as close as possible to this pin

for accurate regulation.

3 FB Feedback pin. Connect FB to the external resistor divider to set output voltage.

4 EN Enable control input. Logic high enables operation. Do not allow this pin to float or be greater than VIN + 0.3V.

5 VIN Input supply voltage. Connect a bypass capacitor to this pin.

6 SW Output switch. Connects to the inductor, catch diode, and bootstrap capacitor.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings(1)

VIN -0.5V to 22V

SW Voltage -0.5V to 22V

Boost Voltage -0.5V to 28V

Boost to SW Voltage -0.5V to 6.0V

FB Voltage -0.5V to 3.0V

EN Voltage -0.5V to (VIN + 0.3V)

Junction Temperature 150°C

ESD Susceptibility(2) 2kV

Storage Temp. Range -65°C to 150°C

Infrared/Convection Reflow (15sec) 220°C

Soldering Information Wave Soldering Lead Temp. (10sec) 260°C

(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(2) Human body model, 1.5kΩin series with 100pF.

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LM2736

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SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

Operating Ratings(1)

VIN 3V to 18V

SW Voltage -0.5V to 18V

Boost Voltage -0.5V to 23V

Boost to SW Voltage 1.6V to 5.5V

Junction Temperature Range −40°C to +125°C

Thermal Resistance θJA(2) 118°C/W

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For specific specifications and the test conditions,

see Electrical Characteristics.

(2) Thermal shutdown will occur if the junction temperature exceeds 165°C. The maximum power dissipation is a function of TJ(MAX) ,θJA

and TA. The maximum allowable power dissipation at any ambient temperature is PD= (TJ(MAX) – TA)/θJA . All numbers apply for

packages soldered directly onto a 3” x 3” PC board with 2oz. copper on 4 layers in still air. For a 2 layer board using 1 oz. copper in still

air, θJA = 204°C/W.

Electrical Characteristics

Specifications with standard typeface are for TJ= 25°C, and those in boldface type apply over the full Operating

Temperature Range (TJ= -40°C to 125°C). VIN = 5V, VBOOST - VSW = 5V unless otherwise specified. Datasheet min/max

specification limits are ensured by design, test, or statistical analysis.

Symbol Parameter Conditions Min(1) Typ(2) Max(1) Units

VFB Feedback Voltage 1.225 1.250 1.275 V

ΔVFB/ΔVIN Feedback Voltage Line Regulation VIN = 3V to 18V 0.01 % / V

IFB Feedback Input Bias Current Sink/Source 10 250 nA

Undervoltage Lockout VIN Rising 2.74 2.90

UVLO Undervoltage Lockout VIN Falling 2.0 2.3 V

UVLO Hysteresis 0.30 0.44 0.62

LM2736X 1.2 1.6 1.9

FSW Switching Frequency MHz

LM2736Y 0.40 0.55 0.66

LM2736X 85 92

DMAX Maximum Duty Cycle %

LM2736Y 90 96

LM2736X 2

DMIN Minimum Duty Cycle %

LM2736Y 1

RDS(ON) Switch ON Resistance VBOOST - VSW = 3V 350 650 mΩ

ICL Switch Current Limit VBOOST - VSW = 3V 1.0 1.5 2.3 A

IQQuiescent Current Switching 1.5 2.5 mA

Quiescent Current (shutdown) VEN = 0V 30 nA

LM2736X (50% Duty Cycle) 2.2 3.3

IBOOST Boost Pin Current mA

LM2736Y (50% Duty Cycle) 0.9 1.6

Shutdown Threshold Voltage VEN Falling 0.4

VEN_TH V

Enable Threshold Voltage VEN Rising 1.8

IEN Enable Pin Current Sink/Source 10 nA

ISW Switch Leakage 40 nA

(1) Specified to Texas Instruments' Average Outgoing Quality Level (AOQL).

(2) Typicals represent the most likely parametric norm.

Product Folder Links: LM2736

LM2736

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Typical Performance Characteristics

All curves taken at VIN = 5V, VBOOST - VSW = 5V, L1 = 4.7 µH ("X"), L1 = 10 µH ("Y"), and TA= 25°C, unless specified

otherwise.

Efficiency vs Load Current - "X" VOUT = 5V Efficiency vs Load Current - "Y" VOUT = 5V

Figure 3. Figure 4.

Efficiency vs Load Current - "X" VOUT = 3.3V Efficiency vs Load Current - "Y" VOUT = 3.3V

Figure 5. Figure 6.

Efficiency vs Load Current - "X" VOUT = 1.5V Efficiency vs Load Current - "Y" VOUT = 1.5V

Figure 7. Figure 8.

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LM2736

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Typical Performance Characteristics (continued)

All curves taken at VIN = 5V, VBOOST - VSW = 5V, L1 = 4.7 µH ("X"), L1 = 10 µH ("Y"), and TA= 25°C, unless specified

otherwise. Oscillator Frequency vs Temperature - "X" Oscillator Frequency vs Temperature - "Y"

Figure 9. Figure 10.

Current Limit vs Temperature VIN = 18V, VIN = 5V VFB vs Temperature

Figure 11. Figure 12.

RDSON vs Temperature IQSwitching vs Temperature

Figure 13. Figure 14.

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Typical Performance Characteristics (continued)

All curves taken at VIN = 5V, VBOOST - VSW = 5V, L1 = 4.7 µH ("X"), L1 = 10 µH ("Y"), and TA= 25°C, unless specified

otherwise. Line Regulation - "X" VOUT = 1.5V, IOUT = 500mA Line Regulation - "Y" VOUT = 1.5V, IOUT = 500mA

Figure 15. Figure 16.

Line Regulation - "X" VOUT = 3.3V, IOUT = 500mA Line Regulation - "Y" VOUT = 3.3V, IOUT = 500mA

Figure 17. Figure 18.

Product Folder Links: LM2736

BOOST

Output

Control

Logic

Current

Limit

Thermal

Shutdown

Under

Voltage

Lockout

Corrective Ramp

Reset

Pulse

PWM

Comparator

Current-Sense Amplifier RSENSE

Internal

Regulator

and

Enable

Circuit

Oscillator

Driver 0.3:

Switch

Internal

Compensation

GND

Error Amplifier -

+VREF

1.25V

COUT

OFF

VBOOST

VSW

CBOOST

VOUT

CIN

VIN

ISENSE

-1.375V

OVP

Comparator

Error

Signal

LM2736

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SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

Block Diagram

Figure 19.

APPLICATION INFORMATION

THEORY OF OPERATION

The LM2736 is a constant frequency PWM buck regulator IC that delivers a 750mA load current. The regulator

has a preset switching frequency of either 550kHz (LM2736Y) or 1.6MHz (LM2736X). These high frequencies

allow the LM2736 to operate with small surface mount capacitors and inductors, resulting in DC/DC converters

that require a minimum amount of board space. The LM2736 is internally compensated, so it is simple to use,

and requires few external components. The LM2736 uses current-mode control to regulate the output voltage.

The following operating description of the LM2736 will refer to the Simplified Block Diagram (Figure 19) and to

the waveforms in Figure 20. The LM2736 supplies a regulated output voltage by switching the internal NMOS

control switch at constant frequency and variable duty cycle. A switching cycle begins at the falling edge of the

reset pulse generated by the internal oscillator. When this pulse goes low, the output control logic turns on the

internal NMOS control switch. During this on-time, the SW pin voltage (VSW) swings up to approximately VIN, and

the inductor current (IL) increases with a linear slope. ILis measured by the current-sense amplifier, which

generates an output proportional to the switch current. The sense signal is summed with the regulator’s

corrective ramp and compared to the error amplifier’s output, which is proportional to the difference between the

feedback voltage and VREF. When the PWM comparator output goes high, the output switch turns off until the

next switching cycle begins. During the switch off-time, inductor current discharges through Schottky diode D1,

which forces the SW pin to swing below ground by the forward voltage (VD) of the catch diode. The regulator

loop adjusts the duty cycle (D) to maintain a constant output voltage.

Product Folder Links: LM2736

BOOST

GND

COUT

CBOOST

VOUT

CIN

VIN

VBOOST

VIN

TON

Inductor

Current

D = TON/TSW

VSW

TOFF

TSW

IPK

Voltage

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

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Figure 20. LM2736 Waveforms of SW Pin Voltage and Inductor Current

BOOST FUNCTION

Capacitor CBOOST and diode D2 in Figure 21 are used to generate a voltage VBOOST. VBOOST - VSW is the gate

drive voltage to the internal NMOS control switch. To properly drive the internal NMOS switch during its on-time,

VBOOST needs to be at least 1.6V greater than VSW. Although the LM2736 will operate with this minimum voltage,

it may not have sufficient gate drive to supply large values of output current. Therefore, it is recommended that

VBOOST be greater than 2.5V above VSW for best efficiency. VBOOST – VSW should not exceed the maximum

operating limit of 5.5V.

5.5V > VBOOST – VSW > 2.5V for best performance.

Figure 21. VOUT Charges CBOOST

When the LM2736 starts up, internal circuitry from the BOOST pin supplies a maximum of 20mA to CBOOST. This

current charges CBOOST to a voltage sufficient to turn the switch on. The BOOST pin will continue to source

current to CBOOST until the voltage at the feedback pin is greater than 1.18V.

There are various methods to derive VBOOST:

1. From the input voltage (VIN)

2. From the output voltage (VOUT)

3. From an external distributed voltage rail (VEXT)

4. From a shunt or series zener diode

In the Simplifed Block Diagram of Figure 19, capacitor CBOOST and diode D2 supply the gate-drive current for the

NMOS switch. Capacitor CBOOST is charged via diode D2 by VIN. During a normal switching cycle, when the

internal NMOS control switch is off (TOFF) (refer to Figure 20), VBOOST equals VIN minus the forward voltage of D2

(VFD2), during which the current in the inductor (L) forward biases the Schottky diode D1 (VFD1). Therefore the

voltage stored across CBOOST is

VBOOST - VSW = VIN - VFD2 + VFD1 (1)

Product Folder Links: LM2736

VIN BOOST

GND

CBOOST

VBOOST

VIN

CIN

COUT

VOUT

LM2736

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SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

When the NMOS switch turns on (TON), the switch pin rises to

VSW = VIN – (RDSON x IL), (2)

forcing VBOOST to rise thus reverse biasing D2. The voltage at VBOOST is then

VBOOST = 2VIN – (RDSON x IL) – VFD2 + VFD1 (3)

which is approximately

2VIN - 0.4V (4)

for many applications. Thus the gate-drive voltage of the NMOS switch is approximately

VIN - 0.2V (5)

An alternate method for charging CBOOST is to connect D2 to the output as shown in Figure 21. The output

voltage should be between 2.5V and 5.5V, so that proper gate voltage will be applied to the internal switch. In

this circuit, CBOOST provides a gate drive voltage that is slightly less than VOUT.

In applications where both VIN and VOUT are greater than 5.5V, or less than 3V, CBOOST cannot be charged

directly from these voltages. If VIN and VOUT are greater than 5.5V, CBOOST can be charged from VIN or VOUT

minus a zener voltage by placing a zener diode D3 in series with D2, as shown in Figure 22. When using a

series zener diode from the input, ensure that the regulation of the input supply doesn’t create a voltage that falls

outside the recommended VBOOST voltage.

(VINMAX – VD3) < 5.5V

(VINMIN – VD3) > 1.6V

Figure 22. Zener Reduces Boost Voltage from VIN

An alternative method is to place the zener diode D3 in a shunt configuration as shown in Figure 23. A small

350mW to 500mW 5.1V zener in a SOT or SOD package can be used for this purpose. A small ceramic

capacitor such as a 6.3V, 0.1µF capacitor (C4) should be placed in parallel with the zener diode. When the

internal NMOS switch turns on, a pulse of current is drawn to charge the internal NMOS gate capacitance. The

0.1 µF parallel shunt capacitor ensures that the VBOOST voltage is maintained during this time.

Resistor R3 should be chosen to provide enough RMS current to the zener diode (D3) and to the BOOST pin. A

recommended choice for the zener current (IZENER) is 1 mA. The current IBOOST into the BOOST pin supplies the

gate current of the NMOS control switch and varies typically according to the following formula for the X -

version:

IBOOST = 0.49 x (D + 0.54) x (VZENER – VD2) mA (6)

IBOOST can be calculated for the Y version using the following:

IBOOST = 0.20 x (D + 0.54) x (VZENER - VD2) µA (7)

where D is the duty cycle, VZENER and VD2 are in volts, and IBOOST is in milliamps. VZENER is the voltage applied to

the anode of the boost diode (D2), and VD2 is the average forward voltage across D2. Note that this formula for

IBOOST gives typical current. For the worst case IBOOST, increase the current by 40%. In that case, the worst case

boost current will be

IBOOST-MAX = 1.4 x IBOOST (8)

R3 will then be given by

R3 = (VIN - VZENER) / (1.4 x IBOOST + IZENER) (9)

For example, using the X-version let VIN = 10V, VZENER = 5V, VD2 = 0.7V, IZENER = 1mA, and duty cycle D = 50%.

Then

Product Folder Links: LM2736

VIN BOOST

GND

VBOOST

CBOOST

VIN

CIN

COUT

VOUT

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

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IBOOST = 0.49 x (0.5 + 0.54) x (5 - 0.7) mA = 2.19mA (10)

R3 = (10V - 5V) / (1.4 x 2.19mA + 1mA) = 1.23kΩ(11)

Figure 23. Boost Voltage Supplied from the Shunt Zener on VIN

ENABLE PIN / SHUTDOWN MODE

The LM2736 has a shutdown mode that is controlled by the enable pin (EN). When a logic low voltage is applied

to EN, the part is in shutdown mode and its quiescent current drops to typically 30nA. Switch leakage adds

another 40nA from the input supply. The voltage at this pin should never exceed VIN + 0.3V.

SOFT-START

This function forces VOUT to increase at a controlled rate during start up. During soft-start, the error amplifier’s

reference voltage ramps from 0V to its nominal value of 1.25V in approximately 200µs. This forces the regulator

output to ramp up in a more linear and controlled fashion, which helps reduce inrush current.

OUTPUT OVERVOLTAGE PROTECTION

The overvoltage comparator compares the FB pin voltage to a voltage that is 10% higher than the internal

reference Vref. Once the FB pin voltage goes 10% above the internal reference, the internal NMOS control

switch is turned off, which allows the output voltage to decrease toward regulation.

UNDERVOLTAGE LOCKOUT

Undervoltage lockout (UVLO) prevents the LM2736 from operating until the input voltage exceeds 2.74V(typ).

The UVLO threshold has approximately 440mV of hysteresis, so the part will operate until VIN drops below

2.3V(typ). Hysteresis prevents the part from turning off during power up if VIN is non-monotonic.

CURRENT LIMIT

The LM2736 uses cycle-by-cycle current limiting to protect the output switch. During each switching cycle, a

current limit comparator detects if the output switch current exceeds 1.5A (typ), and turns off the switch until the

next switching cycle begins.

THERMAL SHUTDOWN

Thermal shutdown limits total power dissipation by turning off the output switch when the IC junction temperature

exceeds 165°C. After thermal shutdown occurs, the output switch doesn’t turn on until the junction temperature

drops to approximately 150°C.

Product Folder Links: LM2736

L = VO + VD

IO x r x fSx (1-D)

r = 'iL

D = VO + VD

VIN + VD - VSW

D = VO

VIN

LM2736

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Design Guide

INDUCTOR SELECTION

The Duty Cycle (D) can be approximated quickly using the ratio of output voltage (VO) to input voltage (VIN):

(12)

The catch diode (D1) forward voltage drop and the voltage drop across the internal NMOS must be included to

calculate a more accurate duty cycle. Calculate D by using the following formula:

(13)

VSW can be approximated by:

VSW = IOx RDS(ON) (14)

The diode forward drop (VD) can range from 0.3V to 0.7V depending on the quality of the diode. The lower VDis,

the higher the operating efficiency of the converter.

The inductor value determines the output ripple current. Lower inductor values decrease the size of the inductor,

but increase the output ripple current. An increase in the inductor value will decrease the output ripple current.

The ratio of ripple current (ΔiL) to output current (IO) is optimized when it is set between 0.3 and 0.4 at 750mA.

The ratio r is defined as:

(15)

One must also ensure that the minimum current limit (1.0A) is not exceeded, so the peak current in the inductor

must be calculated. The peak current (ILPK) in the inductor is calculated by:

ILPK = IO+ΔIL/2 (16)

If r = 0.7 at an output of 750mA, the peak current in the inductor will be 1.0125A. The minimum ensured current

limit over all operating conditions is 1.0A. One can either reduce r to 0.6 resulting in a 975mA peak current, or

make the engineering judgement that 12.5mA over will be safe enough with a 1.5A typical current limit and 6

sigma limits. When the designed maximum output current is reduced, the ratio r can be increased. At a current of

0.1A, r can be made as high as 0.9. The ripple ratio can be increased at lighter loads because the net ripple is

actually quite low, and if r remains constant the inductor value can be made quite large. An equation empirically

developed for the maximum ripple ratio at any current below 2A is:

r = 0.387 x IOUT-0.3667 (17)

Note that this is just a guideline.

The LM2736 operates at frequencies allowing the use of ceramic output capacitors without compromising

transient response. Ceramic capacitors allow higher inductor ripple without significantly increasing output ripple.

See the OUTPUT CAPACITOR section for more details on calculating output voltage ripple.

Now that the ripple current or ripple ratio is determined, the inductance is calculated by:

(18)

where fsis the switching frequency and IOis the output current. When selecting an inductor, make sure that it is

capable of supporting the peak output current without saturating. Inductor saturation will result in a sudden

reduction in inductance and prevent the regulator from operating correctly. Because of the speed of the internal

current limit, the peak current of the inductor need only be specified for the required maximum output current. For

example, if the designed maximum output current is 0.5A and the peak current is 0.7A, then the inductor should

Product Folder Links: LM2736

IRMS-OUT = IO x r

'VO = 'iL x (RESR + 1

8 x fS x CO)

IRMS-IN = IO x D x r2

1-D +

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

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be specified with a saturation current limit of >0.7A. There is no need to specify the saturation or peak current of

the inductor at the 1.5A typical switch current limit. The difference in inductor size is a factor of 5. Because of the

operating frequency of the LM2736, ferrite based inductors are preferred to minimize core losses. This presents

little restriction since the variety of ferrite based inductors is huge. Lastly, inductors with lower series resistance

(DCR) will provide better operating efficiency. For recommended inductors see Example Circuits.

INPUT CAPACITOR

An input capacitor is necessary to ensure that VIN does not drop excessively during switching transients. The

primary specifications of the input capacitor are capacitance, voltage, RMS current rating, and ESL (Equivalent

Series Inductance). The recommended input capacitance is 10µF, although 4.7µF works well for input voltages

below 6V. The input voltage rating is specifically stated by the capacitor manufacturer. Make sure to check any

recommended deratings and also verify if there is any significant change in capacitance at the operating input

voltage and the operating temperature. The input capacitor maximum RMS input current rating (IRMS-IN) must be

greater than:

(19)

It can be shown from the above equation that maximum RMS capacitor current occurs when D = 0.5. Always

calculate the RMS at the point where the duty cycle, D, is closest to 0.5. The ESL of an input capacitor is usually

determined by the effective cross sectional area of the current path. A large leaded capacitor will have high ESL

and a 0805 ceramic chip capacitor will have very low ESL. At the operating frequencies of the LM2736, certain

capacitors may have an ESL so large that the resulting impedance (2πfL) will be higher than that required to

provide stable operation. As a result, surface mount capacitors are strongly recommended. Sanyo POSCAP,

Tantalum or Niobium, Panasonic SP or Cornell Dubilier ESR, and multilayer ceramic capacitors (MLCC) are all

good choices for both input and output capacitors and have very low ESL. For MLCCs it is recommended to use

X7R or X5R dielectrics. Consult capacitor manufacturer datasheet to see how rated capacitance varies over

operating conditions.

OUTPUT CAPACITOR

The output capacitor is selected based upon the desired output ripple and transient response. The initial current

of a load transient is provided mainly by the output capacitor. The output ripple of the converter is:

(20)

When using MLCCs, the ESR is typically so low that the capacitive ripple may dominate. When this occurs, the

output ripple will be approximately sinusoidal and 90° phase shifted from the switching action. Given the

availability and quality of MLCCs and the expected output voltage of designs using the LM2736, there is really no

need to review any other capacitor technologies. Another benefit of ceramic capacitors is their ability to bypass

high frequency noise. A certain amount of switching edge noise will couple through parasitic capacitances in the

inductor to the output. A ceramic capacitor will bypass this noise while a tantalum will not. Since the output

capacitor is one of the two external components that control the stability of the regulator control loop, most

applications will require a minimum at 10 µF of output capacitance. Capacitance can be increased significantly

with little detriment to the regulator stability. Like the input capacitor, recommended multilayer ceramic capacitors

are X7R or X5R. Again, verify actual capacitance at the desired operating voltage and temperature.

Check the RMS current rating of the capacitor. The RMS current rating of the capacitor chosen must also meet

the following condition:

(21)

Product Folder Links: LM2736

R1 =VO- 1

VREF x R2

LM2736

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SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

CATCH DIODE

The catch diode (D1) conducts during the switch off-time. A Schottky diode is recommended for its fast switching

times and low forward voltage drop. The catch diode should be chosen so that its current rating is greater than:

ID1 = IOx (1-D) (22)

The reverse breakdown rating of the diode must be at least the maximum input voltage plus appropriate margin.

To improve efficiency choose a Schottky diode with a low forward voltage drop.

BOOST DIODE

A standard diode such as the 1N4148 type is recommended. For VBOOST circuits derived from voltages less than

3.3V, a small-signal Schottky diode is recommended for greater efficiency. A good choice is the BAT54 small

signal diode.

BOOST CAPACITOR

A ceramic 0.01µF capacitor with a voltage rating of at least 6.3V is sufficient. The X7R and X5R MLCCs provide

the best performance.

OUTPUT VOLTAGE

The output voltage is set using the following equation where R2 is connected between the FB pin and GND, and

R1 is connected between VOand the FB pin. A good value for R2 is 10kΩ.

(23)

PCB Layout Considerations

When planning layout there are a few things to consider when trying to achieve a clean, regulated output. The

most important consideration when completing the layout is the close coupling of the GND connections of the CIN

capacitor and the catch diode D1. These ground ends should be close to one another and be connected to the

GND plane with at least two through-holes. Place these components as close to the IC as possible. Next in

importance is the location of the GND connection of the COUT capacitor, which should be near the GND

connections of CIN and D1.

There should be a continuous ground plane on the bottom layer of a two-layer board except under the switching

node island.

The FB pin is a high impedance node and care should be taken to make the FB trace short to avoid noise pickup

and inaccurate regulation. The feedback resistors should be placed as close as possible to the IC, with the GND

of R2 placed as close as possible to the GND of the IC. The VOUT trace to R1 should be routed away from the

inductor and any other traces that are switching.

High AC currents flow through the VIN, SW and VOUT traces, so they should be as short and wide as possible.

However, making the traces wide increases radiated noise, so the designer must make this trade-off. Radiated

noise can be decreased by choosing a shielded inductor.

The remaining components should also be placed as close as possible to the IC. Please see Application Note

AN-1229 SNVA054 for further considerations and the LM2736 demo board as an example of a four-layer layout.

Product Folder Links: LM2736

VIN VIN

BOOST

GND

VOUT

C3 L1

OFF

C1 R3

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

www.ti.com

LM2736X Circuit Examples

Figure 24. LM2736X (1.6MHz)

VBOOST Derived from VIN

5V to 1.5V/750mA

Table 1. Bill of Materials for Figure 24

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736X TI

C1, Input Cap 10µF, 6.3V, X5R C3216X5ROJ106M TDK

C2, Output Cap 10µF, 6.3V, X5R C3216X5ROJ106M TDK

C3, Boost Cap 0.01uF, 16V, X7R C1005X7R1C103K TDK

D1, Catch Diode 0.3VFSchottky 1A, 10VR MBRM110L ON Semi

D2, Boost Diode 1VF@ 50mA Diode 1N4148W Diodes, Inc.

L1 4.7µH, 1.7A, VLCF4020T- 4R7N1R2 TDK

R1 2kΩ, 1% CRCW06032001F Vishay

R2 10kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

Product Folder Links: LM2736

VIN

BOOST

GND

VOUT

C3 L1

OFF

VIN

C1 R3

LM2736

www.ti.com

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

Figure 25. LM2736X (1.6MHz)

VBOOST Derived from VOUT

12V to 3.3V/750mA

Table 2. Bill of Materials for Figure 25

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736X TI

C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK

C2, Output Cap 22µF, 6.3V, X5R C3216X5ROJ226M TDK

C3, Boost Cap 0.01µF, 16V, X7R C1005X7R1C103K TDK

D1, Catch Diode 0.34VFSchottky 1A, 30VR SS1P3L Vishay

D2, Boost Diode 30V, 200 mA Schottky BAT54 Diodes Inc.

L1 4.7µH, 1.7A, VLCF4020T- 4R7N1R2 TDK

R1 16.5kΩ, 1% CRCW06031652F Vishay

R2 10.0 kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

Product Folder Links: LM2736

VIN VIN

BOOST

GND

VOUT

C3 L1

OFF

C1 R3

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

www.ti.com

Figure 26. LM2736X (1.6MHz)

VBOOST Derived from VSHUNT

18V to 1.5V/750mA

Table 3. Bill of Materials for Figure 26

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736X TI

C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK

C2, Output Cap 22µF, 6.3V, X5R C3216X5ROJ226M TDK

C3, Boost Cap 0.01µF, 16V, X7R C1005X7R1C103K TDK

C4, Shunt Cap 0.1µF, 6.3V, X5R C1005X5R0J104K TDK

D1, Catch Diode 0.4VFSchottky 1A, 30VR SS1P3L Vishay

D2, Boost Diode 1VF@ 50mA Diode 1N4148W Diodes, Inc.

D3, Zener Diode 5.1V 250Mw SOT BZX84C5V1 Vishay

L1 6.8µH, 1.6A, SLF7032T-6R8M1R6 TDK

R1 2kΩ, 1% CRCW06032001F Vishay

R2 10kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

R4 4.12kΩ, 1% CRCW06034121F Vishay

Product Folder Links: LM2736

VIN VIN

BOOST

GND

VOUT

C3 L1

OFF

D2D3

C1 R3

LM2736

www.ti.com

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

Figure 27. LM2736X (1.6MHz)

VBOOST Derived from Series Zener Diode (VIN)

15V to 1.5V/750mA

Table 4. Bill of Materials for Figure 27

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736X TI

C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK

C2, Output Cap 22µF, 6.3V, X5R C3216X5ROJ226M TDK

C3, Boost Cap 0.01µF, 16V, X7R C1005X7R1C103K TDK

D1, Catch Diode 0.4VFSchottky 1A, 30VR SS1P3L Vishay

D2, Boost Diode 1VF@ 50mA Diode 1N4148W Diodes, Inc.

D3, Zener Diode 11V 350Mw SOT BZX84C11T Diodes, Inc.

L1 6.8µH, 1.6A, SLF7032T-6R8M1R6 TDK

R1 2kΩ, 1% CRCW06032001F Vishay

R2 10kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

Product Folder Links: LM2736

VIN VIN

BOOST

GND

VOUT

C3 L1

OFF

D2 D3

C1 R3

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

www.ti.com

Figure 28. LM2736X (1.6MHz)

VBOOST Derived from Series Zener Diode (VOUT)

15V to 9V/750mA

Table 5. Bill of Materials for Figure 28

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736X TI

C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK

C2, Output Cap 22µF, 16V, X5R C3216X5R1C226M TDK

C3, Boost Cap 0.01µF, 16V, X7R C1005X7R1C103K TDK

D1, Catch Diode 0.4VFSchottky 1A, 30VR SS1P3L Vishay

D2, Boost Diode 1VF@ 50mA Diode 1N4148W Diodes, Inc.

D3, Zener Diode 4.3V 350mw SOT BZX84C4V3 Diodes, Inc.

L1 6.8µH, 1.6A, SLF7032T-6R8M1R6 TDK

R1 61.9kΩ, 1% CRCW06036192F Vishay

R2 10kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

Product Folder Links: LM2736

VIN VIN

BOOST

GND

VOUT

C3 L1

OFF

C1 R3

LM2736

www.ti.com

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

LM2736Y Circuit Examples

Figure 29. LM2736Y (550kHz)

VBOOST Derived from VIN

5V to 1.5V/750mA

Table 6. Bill of Materials for Figure 29

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736Y TI

C1, Input Cap 10µF, 6.3V, X5R C3216X5ROJ106M TDK

C2, Output Cap 22µF, 6.3V, X5R C3216X5ROJ226M TDK

C3, Boost Cap 0.01µF, 16V, X7R C1005X7R1C103K TDK

D1, Catch Diode 0.3VFSchottky 1A, 10VR MBRM110L ON Semi

D2, Boost Diode 1VF@ 50mA Diode 1N4148W Diodes, Inc.

L1 10µH, 1.6A, SLF7032T-100M1R4 TDK

R1 2kΩ, 1% CRCW06032001F Vishay

R2 10kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

Product Folder Links: LM2736

VIN

BOOST

GND

VOUT

C3 L1

OFF

VIN

C1 R3

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

www.ti.com

Figure 30. LM2736Y (550kHz)

VBOOST Derived from VOUT

12V to 3.3V/750mA

Table 7. Bill of Materials for Figure 30

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736Y TI

C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK

C2, Output Cap 22µF, 6.3V, X5R C3216X5ROJ226M TDK

C3, Boost Cap 0.01µF, 16V, X7R C1005X7R1C103K TDK

D1, Catch Diode 0.34VFSchottky 1A, 30VR SS1P3L Vishay

D2, Boost Diode 30V, 200 mA Schottky BAT54 Diodes Inc.

L1 10µH, 1.6A, SLF7032T-100M1R4 TDK

R1 16.5kΩ, 1% CRCW06031652F Vishay

R2 10.0 kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

Product Folder Links: LM2736

VIN VIN

BOOST

GND

VOUT

C3 L1

OFF

C1 R3

LM2736

www.ti.com

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

Figure 31. LM2736Y (550kHz)

VBOOST Derived from VSHUNT

18V to 1.5V/750mA

Table 8. Bill of Materials for Figure 31

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736Y TI

C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK

C2, Output Cap 22µF, 6.3V, X5R C3216X5ROJ226M TDK

C3, Boost Cap 0.01µF, 16V, X7R C1005X7R1C103K TDK

C4, Shunt Cap 0.1µF, 6.3V, X5R C1005X5R0J104K TDK

D1, Catch Diode 0.4VFSchottky 1A, 30VR SS1P3L Vishay

D2, Boost Diode 1VF@ 50mA Diode 1N4148W Diodes, Inc.

D3, Zener Diode 5.1V 250Mw SOT BZX84C5V1 Vishay

L1 15µH, 1.5A SLF7045T-150M1R5 TDK

R1 2kΩ, 1% CRCW06032001F Vishay

R2 10kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

R4 4.12kΩ, 1% CRCW06034121F Vishay

Product Folder Links: LM2736

VIN VIN

BOOST

GND

VOUT

C3 L1

OFF

D2D3

C1 R3

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

www.ti.com

Figure 32. LM2736Y (550kHz)

VBOOST Derived from Series Zener Diode (VIN)

15V to 1.5V/750mA

Table 9. Bill of Materials for Figure 32

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736Y TI

C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK

C2, Output Cap 22µF, 6.3V, X5R C3216X5ROJ226M TDK

C3, Boost Cap 0.01µF, 16V, X7R C1005X7R1C103K TDK

D1, Catch Diode 0.4VFSchottky 1A, 30VR SS1P3L Vishay

D2, Boost Diode 1VF@ 50mA Diode 1N4148W Diodes, Inc.

D3, Zener Diode 11V 350Mw SOT BZX84C11T Diodes, Inc.

L1 15µH, 1.5A, SLF7045T-150M1R5 TDK

R1 2kΩ, 1% CRCW06032001F Vishay

R2 10kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

Product Folder Links: LM2736

VIN VIN

BOOST

GND

VOUT

C3 L1

OFF

D2 D3

C1 R3

LM2736

www.ti.com

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

Figure 33. LM2736Y (550kHz)

VBOOST Derived from Series Zener Diode (VOUT)

15V to 9V/750mA

Table 10. Bill of Materials for Figure 33

Part ID Part Value Part Number Manufacturer

U1 750mA Buck Regulator LM2736Y TI

C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK

C2, Output Cap 22µF, 16V, X5R C3216X5R1C226M TDK

C3, Boost Cap 0.01µF, 16V, X7R C1005X7R1C103K TDK

D1, Catch Diode 0.4VFSchottky 1A, 30VR SS1P3L Vishay

D2, Boost Diode 1VF@ 50mA Diode 1N4148W Diodes, Inc.

D3, Zener Diode 4.3V 350mw SOT BZX84C4V3 Diodes, Inc.

L1 22µH, 1.4A, SLF7045T-220M1R3-1PF TDK

R1 61.9kΩ, 1% CRCW06036192F Vishay

R2 10kΩ, 1% CRCW06031002F Vishay

R3 100kΩ, 1% CRCW06031003F Vishay

Product Folder Links: LM2736

LM2736

SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013

www.ti.com

REVISION HISTORY

Changes from Revision E (April 2013) to Revision F Page

• Changed layout of National Data Sheet to TI format .......................................................................................................... 23

Product Folder Links: LM2736

PACKAGE OPTION ADDENDUM

www.ti.com 1-Nov-2013

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LM2736XMK NRND SOT DDC 6 1000 TBD Call TI Call TI -40 to 125 SHAB

LM2736XMK/NOPB ACTIVE SOT DDC 6 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SHAB

LM2736XMKX/NOPB ACTIVE SOT DDC 6 3000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SHAB

LM2736YMK NRND SOT DDC 6 1000 TBD Call TI Call TI -40 to 125 SHBB

LM2736YMK/NOPB ACTIVE SOT DDC 6 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SHBB

LM2736YMKX/NOPB ACTIVE SOT DDC 6 3000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SHBB

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

PACKAGE OPTION ADDENDUM

www.ti.com 1-Nov-2013

Addendum-Page 2

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LM2736XMK SOT DDC 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LM2736XMK/NOPB SOT DDC 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LM2736XMKX/NOPB SOT DDC 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LM2736YMK SOT DDC 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LM2736YMK/NOPB SOT DDC 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LM2736YMKX/NOPB SOT DDC 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

PACKAGE MATERIALS INFORMATION

www.ti.com 23-Sep-2013

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LM2736XMK SOT DDC 6 1000 210.0 185.0 35.0

LM2736XMK/NOPB SOT DDC 6 1000 210.0 185.0 35.0

LM2736XMKX/NOPB SOT DDC 6 3000 210.0 185.0 35.0

LM2736YMK SOT DDC 6 1000 210.0 185.0 35.0

LM2736YMK/NOPB SOT DDC 6 1000 210.0 185.0 35.0

LM2736YMKX/NOPB SOT DDC 6 3000 210.0 185.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 23-Sep-2013

Pack Materials-Page 2

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