SiHJ10N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D PowerPAK(R) SO-8L * Low figure-of-merit (FOM) Ron x Qg * Low input capacitance (Ciss) * Reduced switching and conduction losses G * Ultra low gate charge (Qg) * Avalanche energy rated (UIS) * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S N-Channel MOSFET APPLICATIONS * Switch mode power supplies (SMPS) PRODUCT SUMMARY * Flyback converter VDS (V) at TJ max. RDS(on) typ. () at 25 C 650 * Lighting VGS = 10 V 0.313 Qg max. (nC) 50 Qgs (nC) 6 Qgd (nC) - High-intensity discharge (HID) - Fluorescent ballast lighting * Consumer 13 Configuration - Wall adaptors Single ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SiHJ10N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 600 Gate-source voltage VGS 30 Continuous drain current (TJ = 150 C) Pulsed drain VGS at 10 V TC = 25 C TC = 100 C current a UNIT V 10 ID A 6 IDM 23 Linear derating factor 0.71 W/C mJ Single pulse avalanche energy b EAS 95 Maximum power dissipation PD 89 W TJ, Tstg -55 to +150 C Operating junction and storage temperature range Drain-source voltage slope TJ = 125 C Reverse diode dV/dt c 70 dV/dt V/ns 26 Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 120 V, starting TJ = 25 C, L = 28.2 mH, Rg = 25 , IAS = 2.6 A. c. ISD ID, dI/dt = 100 A/s, starting TJ = 25 C. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA 52 65 Maximum junction-to-case (drain) RthJC 1.0 1.4 S17-0008-Rev. B, 16-Jan-17 UNIT C/W Document Number: 91930 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ10N60E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) Gate-source leakage Zero gate voltage drain current VDS VGS = 0 V, ID = 250 A 600 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.7 - V/C VGS(th) VDS = VGS, ID = 250 A 2.5 - 4.5 V VGS = 20 V - - 100 nA A IGSS IDSS VGS = 30 V - - 1 VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V, TJ = 125 C - - 10 A - 0.313 0.360 gfs VDS = 30 V, ID = 5 A - 2.5 - S Input capacitance Ciss 784 - Coss - 47 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output capacitance - 4 - Effective output capacitance, energy related a Co(er) - 30 - Effective output capacitance, time related b Co(tr) - 145 - - 25 50 - 6 - - 13 - Drain-source on-state resistance Forward transconductance RDS(on) VGS = 10 V ID = 5 A Dynamic pF VDS = 0 V to 480 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg VGS = 10 V ID = 5 A, VDS = 480 V - 16 32 VDD = 480 V, ID = 5 A, VGS = 10 V, Rg = 9.1 - 24 48 - 31 62 - 13 26 f = 1 MHz 0.4 0.8 1.6 - - 10 - - 23 nC ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 C, IS = 5 A, VGS = 0 V TJ = 25 C, IF = IS = 5 A, dI/dt = 100 A/s, VR = 25 V S - 0.9 1.2 V - 241 482 ns - 2.6 5.2 C - 20 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S17-0008-Rev. B, 16-Jan-17 Document Number: 91930 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ10N60E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 3.0 25 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 20 15 TJ = 25 C ID = 5 A RDS(on), Drain-to-Source On-Resistance (Normalized) 10 5 2.0 1.5 1.0 0.5 VGS = 10 V 0 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) -60 -40 -20 20 Fig. 1 - Typical Output Characteristics 15 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 10 000 5 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd Ciss 1000 C, Capacitance (pF) 10 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig. 4 - Normalized On-Resistance vs. Temperature TJ = 150 C TOP ID, Drain-to-Source Current (A) 2.5 100 Coss 10 Crss 1 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) 0 20 Fig. 2 - Typical Output Characteristics 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 25 7 10 000 6 5 1000 15 4 Coss (pF) ID, Drain-to-Source Current (A) TJ = 25 C 20 TJ = 150 C 10 Coss Eoss 3 Eoss (J) ID, Drain-to-Source Current (A) TOP 100 2 5 1 VDS = 30.6 V 0 10 0 5 10 15 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S17-0008-Rev. B, 16-Jan-17 20 0 0 100 200 300 VDS 400 500 600 Fig. 6 - Coss and Eoss vs. VDS Document Number: 91930 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ10N60E www.vishay.com Vishay Siliconix 12 VDS = 480 V VDS = 300 V VDS = 120 V 9 9 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 12 6 3 3 0 0 0 6 12 18 24 Qg, Total Gate Charge (nC) 30 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 25 50 75 100 125 TC, Case Temperature (C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 775 VDS, Drain-to-Source Breakdown Voltage (V) 100 ISD, Reverse Drain Current (A) 6 TJ = 150 C 10 TJ = 25 C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-Drain Voltage (V) 1.2 1.4 Fig. 8 - Typical Source-Drain Diode Forward Voltage 750 725 700 675 650 625 600 ID = 250 A 575 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig. 11 - Temperature vs. Drain-to-Source Voltage 100 Operation in this area limited by RDS(on) IDM limited ID, Drain Current (A) 10 100 s Limited by RDS(on)* 1 1 ms 0.1 TC = 25 C TJ = 150 C Single pulse 0.01 1 10 ms BVDSS limited 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S17-0008-Rev. B, 16-Jan-17 Document Number: 91930 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ10N60E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 0.000001 0.0001 0.00001 0.001 Pulse Time (s) 0.01 0.1 1 Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case 1 Duty cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 0.001 Single pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Time (s) Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient VDS VGS L RD VDS Vary tp to obtain required IAS D.U.T. Rg D.U.T. Rg + - VDD + - VDD IAS 10 V 10 V Pulse width 1 s Duty factor 0.1 % tp Fig. 14 - Switching Time Test Circuit 0.01 Fig. 16 - Unclamped Inductive Test Circuit VDS VDS 90 % tp VDD VDS 10 % VGS td(on) tr td(off) tf Fig. 15 - Switching Time Waveforms S17-0008-Rev. B, 16-Jan-17 IAS Fig. 17 - Unclamped Inductive Waveforms Document Number: 91930 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHJ10N60E www.vishay.com Vishay Siliconix Current regulator Same type as D.U.T. Qg 10 V 50 k Qgs Qgd 12 V 0.2 F 0.3 F + VG D.U.T. - VDS VGS Charge Fig. 18 - Basic Gate Charge Waveform 3 mA IG ID Current sampling resistors Fig. 19 - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg * * * * 1 Driver gate drive Period P.W. + V - DD dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T. VDS Body diode forward current dI/dt waveform Diode recovery dV/dt Re-applied voltage V DD Body diode forward drop 4 Inductor current Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 20 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91930. S17-0008-Rev. B, 16-Jan-17 Document Number: 91930 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK(R) SO-8L Case Outline for Al Parts Revision: 07-Sep-15 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0 - 0.117 10 0 - 10 ECN: C15-1203-Rev. A, 07-Sep-15 DWG: 6044 Note * Millimeters will gover Revision: 07-Sep-15 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000