SiHJ10N60E
www.vishay.com Vishay Siliconix
S17-0008-Rev. B, 16-Jan-17 1Document Number: 91930
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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E Series Power MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Switch mode power supplies (SMPS)
• Flyback converter
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Consumer
- Wall adaptors
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2.6 A.
c. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
PRODUCT SUMMARY
VDS (V) at TJ max. 650
RDS(on) typ. () at 25 °C VGS = 10 V 0.313
Qg max. (nC) 50
Qgs (nC) 6
Qgd (nC) 13
Configuration Single
N-Channel MOSFET
G
D
S
PowerPAK
®
SO-8L
ORDERING INFORMATION
Package PowerPAK SO-8L
Lead (Pb)-free and halogen-free SiHJ10N60E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 600 V
Gate-source voltage VGS ± 30
Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID
10
ATC = 100 °C 6
Pulsed drain current a IDM 23
Linear derating factor 0.71 W/°C
Single pulse avalanche energy b EAS 95 mJ
Maximum power dissipation PD89 W
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Drain-source voltage slope TJ = 125 °C dV/dt 70 V/ns
Reverse diode dV/dt c26
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA 52 65 °C/W
Maximum junction-to-case (drain) RthJC 1.0 1.4
SiHJ10N60E
www.vishay.com Vishay Siliconix
S17-0008-Rev. B, 16-Jan-17 2Document Number: 91930
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 600 - - V
VDS temperature coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.7 - V/°C
Gate-source threshold voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2.5 - 4.5 V
Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA
VGS = ± 30 V - - ± 1 μA
Zero gate voltage drain current IDSS
VDS = 600 V, VGS = 0 V - - 1 μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 10
Drain-source on-state resistance RDS(on) V
GS = 10 V ID = 5 A - 0.313 0.360
Forward transconductance gfs VDS = 30 V, ID = 5 A - 2.5 - S
Dynamic
Input capacitance Ciss VGS = 0 V,
VDS = 100 V,
f = 1 MHz
- 784 -
pF
Output capacitance Coss -47-
Reverse transfer capacitance Crss -4-
Effective output capacitance, energy
related a Co(er)
VDS = 0 V to 480 V, VGS = 0 V
-30-
Effective output capacitance, time
related b Co(tr) - 145 -
Total gate charge Qg
VGS = 10 V ID = 5 A, VDS = 480 V
-2550
nC Gate-source charge Qgs -6-
Gate-drain charge Qgd -13-
Turn-on delay time td(on)
VDD = 480 V, ID = 5 A,
VGS = 10 V, Rg = 9.1
-1632
ns
Rise time tr -2448
Turn-off delay time td(off) -3162
Fall time tf -1326
Gate input resistance Rgf = 1 MHz 0.4 0.8 1.6
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--10
A
Pulsed diode forward current ISM --23
Diode forward voltage VSD TJ = 25 °C, IS = 5 A, VGS = 0 V - 0.9 1.2 V
Reverse recovery time trr TJ = 25 °C, IF = IS = 5 A,
dI/dt = 100 A/μs, VR = 25 V
- 241 482 ns
Reverse recovery charge Qrr -2.65.2μC
Reverse recovery current IRRM -20-A
S
D
G
SiHJ10N60E
www.vishay.com Vishay Siliconix
S17-0008-Rev. B, 16-Jan-17 3Document Number: 91930
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Coss and Eoss vs. VDS
0
5
10
15
20
25
0 5 10 15 20
ID, Drain-to-Source Current (A)
VDS, Drain-to-Source Voltage (V)
TJ= 25 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
0
5
10
15
0 5 10 15 20
ID, Drain-to-Source Current (A)
VDS, Drain-to-Source Voltage (V)
TJ= 150 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
0
5
10
15
20
25
0 5 10 15 20
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
TJ= 150 °C
TJ= 25 °C
VDS= 30.6 V
0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
RDS(on), Drain-to-Source On-Resistance
(Normalized)
TJ, Junction Temperature (°C)
ID= 5 A
VGS = 10 V
1
10
100
1000
10 000
0 100 200 300 400 500 600
C, Capacitance (pF)
V
DS
, Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
1
2
3
4
5
6
7
10
100
1000
10 000
0 100 200 300 400 500 600
E
oss
(μJ)
C
oss
(pF)
V
DS
C
oss
E
oss
SiHJ10N60E
www.vishay.com Vishay Siliconix
S17-0008-Rev. B, 16-Jan-17 4Document Number: 91930
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Temperature vs. Drain-to-Source Voltage
0
3
6
9
12
0612182430
VGS, Gate-to-Source Voltage (V)
Qg, Total Gate Charge (nC)
VDS= 480 V
VDS= 300 V
VDS= 120 V
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
ISD, Reverse Drain Current (A)
VSD, Source-Drain Voltage (V)
TJ= 150 °C
TJ= 25 °C
VGS = 0 V
0.01
0.1
1
10
100
1101001000
ID, Drain Current (A)
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specied
Limited by RDS(on)*
1 ms
IDM limited
TC= 25 °C
TJ= 150 °C
Single pulseBVDSS limited
10 ms
100 μs
Operation in this area
limited by RDS(on)
0
3
6
9
12
25 50 75 100 125 150
ID, Drain Current (A)
TC, Case Temperature (°C)
575
600
625
650
675
700
725
750
775
-60 -40 -20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Breakdown Voltage (V)
TJ, Junction Temperature (°C)
ID= 250 μA
SiHJ10N60E
www.vishay.com Vishay Siliconix
S17-0008-Rev. B, 16-Jan-17 5Document Number: 91930
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient
Fig. 14 - Switching Time Test Circuit
Fig. 15 - Switching Time Waveforms
Fig. 16 - Unclamped Inductive Test Circuit
Fig. 17 - Unclamped Inductive Waveforms
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Pulse Time (s)
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
0.000010.000001
0.0001
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Pulse Time (s)
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
RD
VGS
Rg
D.U.T.
10 V
+
-
VDS
VDD
Rg
IAS
0.01 Ω
tp
D.U.T.
L
VDS
+
-VDD
10 V
Vary tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
SiHJ10N60E
www.vishay.com Vishay Siliconix
S17-0008-Rev. B, 16-Jan-17 6Document Number: 91930
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 18 - Basic Gate Charge Waveform
Fig. 19 - Gate Charge Test Circuit
Fig. 20 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91930.
QgsQgd
Qg
VG
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 μF
0.2 μF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 V a
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDSwaveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Note
a. VGS = 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
2
1
2
1
3
4
4
3
Package Information
www.vishay.com Vishay Siliconix
Revision: 07-Sep-15 1Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® SO-8L Case Outline
for Al Parts
Package Information
www.vishay.com Vishay Siliconix
Revision: 07-Sep-15 2Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Millimeters will gover
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.07 1.14 0.039 0.042 0.045
A1 0.00 - 0.127 0.00 - 0.005
b 0.33 0.41 0.48 0.013 0.016 0.019
b1 0.44 0.51 0.58 0.017 0.020 0.023
b2 4.80 4.90 5.00 0.189 0.193 0.197
b3 0.094 0.004
b4 0.47 0.019
c 0.20 0.25 0.30 0.008 0.010 0.012
D 5.00 5.13 5.25 0.197 0.202 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D3 1.63 1.73 1.83 0.064 0.068 0.072
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 2.75 2.85 2.95 0.108 0.112 0.116
F - - 0.15 - - 0.006
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.51 0.020
W 0.23 0.009
W1 0.41 0.016
W2 2.82 0.111
W3 2.96 0.117
q 0° - 10° 0° - 10°
ECN: C15-1203-Rev. A, 07-Sep-15
DWG: 6044
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Revision: 08-Feb-17 1Document Number: 91000
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