EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) 50V 100mA 22kW 22kW (1) (2) (6) (5) (4) (3) EMH1 (SC-107C) SMT6 lFeatures 1) Built-In Biasing Resistors, R1 = R2 = 22kW. (4) (3) 2) Two DTC124E chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. (2) (1) (2) Inverter circuit, Interface circuit, Driver circuit (4) (3) UMH1N SOT-353 (SC-88) (5) (6) (1) IMH1A SOT-457 (SC-74) lInner circuit EMH1 / UMH1N lApplication (5) IMH1A OUT (6) IN (5) GND (4) OUT (4) IN (5) GND (6) (1) GND (2) IN (3) OUT (3) GND (2) IN (1) OUT lPackaging specifications Package Package size (mm) Taping code EMH1 EMT6 1616 T2R 180 8 8,000 H1 UMH1N UMT6 2021 TR 180 8 3,000 H1 IMH1A SMT6 2928 T108 180 8 3,000 H1 Part No. www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/7 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) Marking 2012.06 - Rev.B Data Sheet EMH1 / UMH1N / IMH1A lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit Supply voltage VCC 50 V Input voltage VIN -10 to +40 V Output current IO 30 mA IC(MAX.)*1 100 mA 150 (Total)*3 mW 300 (Total)*4 mW Tj 150 C Tstg -55 to +150 C Collector current Power dissipation EMH1 / UMH1N PD IMH1A Junction temperature Range of storage temperature *2 lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit VI(off) VCC = 5V, IO = 100mA - - 0.5 VI(on) VO = 0.2V, IO = 5mA 3.0 - - VO(on) IO / II = 10mA / 0.5mA - 0.1 0.3 V VI = 5V - - 0.36 mA IO(off) VCC = 50V, VI = 0V - - 0.5 mA DC current gain GI VO = 5V, IO = 5mA 56 - - - Input resistance R1 - 15.4 22 28.6 kW Resistance ratio R2/R1 - 0.8 1 1.2 - - 250 - MHz Input voltage Output voltage Input current Output current Transition frequency II fT *1 VCE = 10V, IE = -5mA, f = 100MHz V *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 2/7 2012.06 - Rev.B Data Sheet EMH1 / UMH1N / IMH1A lElectrical characteristic curves(Ta = 25C) Fig.2 Output current vs. input voltage (OFF characteristics) INPUT VOLTAGE : VI(on) [V] OUTPUT CURRENT : IO [A] Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : IO [A] INPUT VOLTAGE : VI(off)[V] Fig.4 DC current gain vs. output current Fig.3 Output current vs. output voltage II= 150A 30 130A 120A 20 110A 100A 90A 80A 10 70A 60A 50A 0 Ta=25C 0 5 0A 10 OUTPUT CURRENT : IO [A] OUTPUT VOLTAGE : VO [V] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : GI OUTPUT CURRENT : IO [mA] 140A 3/7 2012.06 - Rev.B Data Sheet EMH1 / UMH1N / IMH1A lElectrical characteristic curves(Ta = 25C) OUTPUT VOLTAGE : VO(on) [V] Fig.5 Output voltage vs. output current OUTPUT CURRENT : IO [A] www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 4/7 2012.06 - Rev.B Data Sheet EMH1 / UMH1N / IMH1A lDimensions (Unit : mm) D EMT6 A x c S A Lp Lp HE L E L b A1 y S l1 A e1 e S e b2 Patterm of terminal position areas DIM A1 A b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.00 0.10 0.45 0.55 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 MILIMETERS MIN MAX 1.25 0.37 0.45 INCHES MIN 0 0.018 0.007 0.003 0.059 0.043 MAX 0.004 0.022 0.011 0.007 0.067 0.051 0.02 0.059 0.004 - 0.067 0.012 0.014 0.004 0.004 INCHES MIN MAX 0.049 - 0.015 0.018 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5/7 2012.06 - Rev.B Data Sheet EMH1 / UMH1N / IMH1A lDimensions (Unit : mm) D A e c x Lp A3 S A e l1 A1 y S e1 A b HE E Q L1 UMT6 S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 MILIMETERS MIN MAX 1.55 0.40 0.65 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 6/7 INCHES MIN 0 MAX 0.039 0.004 0.01 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.03 0.079 0.008 0.01 0.004 - 0.087 0.02 0.022 0.012 0.004 0.004 INCHES MIN MAX 0.06 - 0.016 0.026 2012.06 - Rev.B Data Sheet EMH1 / UMH1N / IMH1A lDimensions (Unit : mm) SMT6 D A e c L1 Lp HE E Q b A3 x S A y S A1 l1 A e1 e S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.25 0.40 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.20 0.10 MILIMETERS MIN MAX 2.10 0.60 0.90 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 7/7 INCHES MIN 0.039 0 MAX 0.051 0.004 0.01 0.01 0.004 0.11 0.059 0.016 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.008 - 0.118 0.024 0.028 0.012 0.008 0.004 INCHES MIN MAX 0.08 - 0.024 0.035 2012.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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