TO-92 Plastic-Encapsulated Transistors
2N5172 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM : 0.625 W (Tamb=25℃)
Collector current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO : 25 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 10µA, IE=0 25 V
Collector-emitter br eakdown voltage V(BR)CEO Ic= 1 0 mA, IB=0 25 V
E mitter-base breakdown volt age V(BR)EBO IE= 10µA, IC=0 5 V
Collector cut-off current ICBO V
CB= 25V, IE=0 0.1
µA
Emi tter cut-off c u rrent IEBO V
EB= 5 V, IC=0 0.1
µA
DC current gain hFE V
CE= 10V, IC= 10mA 100 500
Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.25 V
Base-emitter satu ration voltage VBE(sat) IC=10m A, IB=1mA 1.2 V
1 2 3
TO—92
1. E MITTER
2. COLLECTOR
3. BASE
Transys
Electronics
LI
M
ITE
D
