1996 Jul 30 3
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm ×10 mm.
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
Tj= 25 °C; unless otherwise specified.
Note
1. Measured under pulse conditions: tp= 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage − ±30 V
VGDO gate-drain voltage open source − −30 V
VGSO gate-source voltage open drain − −30 V
IDdrain current −25 mA
IGgate current −10 mA
Ptot total power dissipation up to Tamb = 75 °C; −300 mW
up to Tamb = 90 °C; note 1 −300 mW
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air 250 K/W
thermal resistance from junction to ambient 200 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)GSS gate-source breakdown voltage IG=−1µA; VDS = 0 −30 −V
VGSoff gate-source cut-off voltage ID= 10 nA; VDS = 15 V −0.25 −8.0 V
VGS gate-source voltage ID= 200 µA; VDS = 15 V
BF245A −0.4 −2.2 V
BF245B −1.6 −3.8 V
BF245C −3.2 −7.5 V
IDSS drain current VDS = 15 V; VGS = 0; note 1
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
IGSS gate cut-off current VGS =−20 V; VDS = 0 − −5 nA
VGS =−20 V; VDS = 0; Tj= 125 °C− −0.5 µA