GENERAL DESCRIPTION
Complementary, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
C
B
O
Collector-emitter voltage peak value VBE = 0V
-
70 V
V
C
E
O
Collector-emitter voltage (open base)
-
60 V
I
C
Collector current (DC)
-
10 A
I
C
M
Collector current peak value
-
A
P
t
o
t
Total power dissipation Tmb25
-
75 W
V
C
E
s
t
Collector-emitter saturation voltage IC = 4.0A; IB = 0.4A
-
1.2 V
V
F
Diode forward voltage IF = 4.0A 1.5 2.0 V
t
f
Fall time -s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
C
E
S
M
Collector-emitter voltage peak value VBE = 0V -70 V
V
C
E
O
Collector-emitter voltage (open base) -60 V
V
E
B
O
Emitter-base oltage (open colloctor) 5v
I
C
Collector current (DC) -10 A
I
B
Base current (DC) -6A
P
t
o
t
Total power dissipation Tmb 25 -75 W
T
s
t
g
Storage temperature -55 150
T
j
Junction temperature -150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
I
C
B
O
Collector-base cut-off current V
C
B
=70V -1.0 mA
I
E
B
O
Emitter-base cut-off current VEB=5V -2.5 mA
V
(
B
R
)
C
E
O
Collector-emitter breakdown voltage I
C
=1mA 60 v
V
C
E
s
a
t
Collector-emitter saturation voltages I
C
= 4.0A; I
B
= 0.4A -1.2 V
h
F
E
DC current gain I
C
= 4.0A; V
C
E
= 4V 20 100
f
T
Transition frequency at f = 5MHz IC = 0.5A; VCE = 10V 5-MHz
C
c
Collector capacitance at f = 1MHz V
C
B
= 10V 350 pF
t
o
n
On times us
t
s
Tum-off storage time us
t
f
Fall time us
ELECTRICAL CHARACTERISTICS
TO-220
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
MJE3055T/MJE2955T
SILICON EPITAXIAL
PLANAR TRANSISTOR