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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M — 6-Pin General Purpose Phototransistor Optocouplers
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3
April 2015
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M
6-Pin General Purpose Phototransistor Optocouplers
Features
■
Minimum Current Transfer Ratio at I
F
= 10 mA,
V
CE
= 10 V:
– 10% for 4N27M and 4N28M
– 20% for 4N25M and 4N26M
– 100% for 4N35M, 4N36M and 4N37M
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
Power Supply Regulators
■
Digital Logic Inputs
■
Microprocessor Inputs
Description
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon photo-
transistor in a standard plastic six-pin dual-in-line
package.
Schematic Package Outlines
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
2
1
3NC
5
6
4
Figure 2. Package Outlines
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 2
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M — 6-Pin General Purpose Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
RMS
I–IV
< 300 V
RMS
I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
V
PR
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC 1360 V
peak
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC 1594 V
peak
V
IORM
Maximum Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over-Voltage 6000 V
peak
External Creepage
≥
7mm
External Clearance
≥
7mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥
10 mm
DTI Distance Through Insulation (Insulation Thickness)
≥
0.5 mm
T
S
Case Temperature
(1)
175 °C
I
S,INPUT
Input Current
(1)
350 mA
P
S,OUTPUT
Output Power
(1)
800 mW
R
IO
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
> 10
9
Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 3
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M — 6-Pin General Purpose Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C unless otherwise specified.
Symbol Parameter Value Unit
TOTAL DEVICE
T
STG
Storage Temperature -40 to +125 °C
T
OPR
Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125 ºC
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
P
D
Total Device Power Dissipation @ T
A
= 25°C 270 mW
Derate Above 25°C 2.94 mW/°C
EMITTER
I
F
DC/Average Forward Input Current 60 mA
V
R
Reverse Input Voltage 6 V
I
F
(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) 3 A
P
D
LED Power Dissipation @ T
A
= 25°C 120 mW
Derate Above 25°C 1.41 mW/°C
DETECTOR
V
CEO
Collector-to-Emitter Voltage 30 V
V
CBO
Collector-to-Base Voltage 70 V
V
ECO
Emitter-to-Collector Voltage 7 V
P
D
Detector Power Dissipation @ T
A
= 25°C 150 mW
Derate Above 25°C 1.76 mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 4
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M — 6-Pin General Purpose Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 10 mA 1.18 1.50 V
I
R
Reverse Leakage Current V
R
= 6.0 V 0.001 10 µA
DETECTOR
BV
CEO
Collector-to-Emitter Breakdown Voltage I
C
= 1.0 mA, I
F
= 0 30 100 V
BV
CBO
Collector-to-Base Breakdown Voltage I
C
= 100 µA, I
F
= 0 70 120 V
BV
ECO
Emitter-to-Collector Breakdown Voltage I
E
= 100 µA, I
F
= 0 7 10 V
I
CEO
Collector-to-Emitter Dark Current V
CE
= 10 V, I
F
= 0 1 50 nA
I
CBO
Collector-to-Base Dark Current V
CB
= 10 V 20 nA
C
CE
Capacitance V
CE
= 0 V, f = 1 MHz 8 pF
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
DC CHARACTERISTICS
CTR Current Transfer Ratio,
Collector-to-Emitter
I
F
= 10 mA, V
CE
= 10 V
4N35M, 4N36M,
4N37M 100 %
4N25M, 4N26M 20 %
4N27M, 4N28M 10 %
I
F
= 10 mA, V
CE
= 10 V,
T
A
= -55°C
4N35M, 4N36M,
4N37M 40 %
I
F
= 10 mA, V
CE
= 10 V,
T
A
= +100°C
4N35M, 4N36M,
4N37M 40 %
V
CE (SAT)
Collector-to-Emitter
Saturation Voltage
I
C
= 2 mA, I
F
= 50 mA 4N25M, 4N26M,
4N27M, 4N28M 0.5 V
I
C
= 0.5 mA, I
F
= 10 mA 4N35M, 4N36M,
4N37M 0.3 V
AC CHARACTERISTICS
T
ON
Non-Saturated
Turn-on Time
I
F
= 10 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Figure 13)
4N25M, 4N26M,
4N27M, 4N28M 2µs
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Figure 13)
4N35M, 4N36M,
4N37M 210µs
T
OFF
Turn-off Time
I
F
= 10 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Figure 13)
4N25M, 4N26M,
4N27M, 4N28M 2µs
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Figure 13)
4N35M, 4N36M,
4N37M 210µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 5
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M — 6-Pin General Purpose Phototransistor Optocouplers
Typical Performance Curves
Figure 4. Normalized CTR vs. Forward Current
IF - FORWARD CURRENT (mA)
0 2 4 6 8 101214161820
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0 V
TA = 25°C
Normalized to
IF = 10 mA
Figure 5. Normalized CTR vs. Ambient Temperature
TA - AMBIENT TEMPERATURE (°C)
-60 -40 -20 0 20 40 60 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5 mA
IF = 10 mA
IF = 20 mA
Normalized to
IF = 10 mA
TA = 25°C
IF - LED FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (V)
Figure 3. LED Forward Voltage vs. Forward Current
1 10 100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = -55°C
TA = 100°C
Figure 7. CTR vs. RBE (Saturated)
RBE- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20 mA
IF = 10 mA
IF = 5 mA
VCE= 0.3 V
Figure 6. CTR vs. RBE (Unsaturated)
RBE- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5.0 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
IF = 5 mA
IF = 20 mA
IF = 10 mA
Figure 8. Collector-Emitter Saturation Voltage
vs. Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IF = 2.5 mA
TA = 25˚C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 6
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M — 6-Pin General Purpose Phototransistor Optocouplers
Typical Performance Curves (Continued)
Switching Time Test Circuit and Waveforms
Figure 13. Switching Time Test Circuit and Waveforms
NORMALIZED ton - (ton(R
BE
) / ton(open))
Figure 10. Normalized ton vs. RBE
RBE - BASE RESISTANCE (kΩ)
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10 V
IC = 2 mA
RL = 100 Ω
SWITCHING SPEED - (μs)
Figure 9. Switching Speed vs. Load Resistor
R - LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
Toff
IF = 10 mA
VCC = 10 V
TA = 25°C
Tr
Ton
Tf
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10 V
IC = 2 mA
RL = 100 Ω
NORMALIZED toff - (toff(R
BE
) / toff(open))
10 100 1000 10000 100000
RBE - BASE RESISTANCE (kΩ)
Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature
TA - AMBIENT TEMPERATURE
(°C)
0 20 40 60 80 100
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
10000
V
CE
= 10 V
T
A
= 25°
C
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVE FORMS
trtf
INPUT
IF RL
RBE
VCC = 10 V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce IC = 2 mA
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 7
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M — 6-Pin General Purpose Phototransistor Optocouplers
Reflow Profile
Figure 14. Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
> 245°C = 42 s
Time above
183°C = 90 s
360
1.822°C/s Ramp-up rate
33 s
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 8
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M — 6-Pin General Purpose Phototransistor Optocouplers
Ordering Information
Note:
2. The product orderable part number system listed in this table also applies to the 4N26M, 4N27M, 4N28M, 4N35M,
4N36M, and 4N37M devices.
Marking Information
Figure 15. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
4N25M DIP 6-Pin Tube (50 Units)
4N25SM SMT 6-Pin (Lead Bend) Tube (50 Units)
4N25SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
4N25VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
4N25SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
4N25SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
4N25TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 One-Digit Year Code, e.g., “5”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
4N25
V X YY Q
1
2
6
43 5
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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