MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features * * PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1000mWatts of Power Dissipation Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Min Max SOT-223 Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO Collector-Emitter Breakdown Voltage* (IC=-1mAdc, IB=0) Collector-Base Breakdown Voltage (IC=-100Adc, IE=0) Emitter-Base Breakdown Voltage (IE=-100Adc, IC=0) Emitter Cutoff Current (VEB=-5Vdc, IC=0Vdc) Collector Cutoff Current (VCB=-50Vdc, IE=0) -60 Vdc -60 Vdc -5.0 Vdc nAdc -50 -0.01 Adc ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain* (IC=-0.1mAdc, VCE=--10Vdc) (IC=-1.0mAdc, VCE=-10Vdc) (IC=-10mAdc, VCE=-10Vdc) (IC=-150mAdc, VCE=-10Vdc) (IC=-500mAdc, VCE=-10Vdc) Collector-Emitter Saturation Voltage (IC=-150mAdc, IB=-15mAdc) (IC=-500mAdc, IB=-50mAdc) Base-Emitter Saturation Voltage (IC=-150mAdc, IB=-15mAdc) (IC=-500mAdc, IB=-50mAdc) 75 100 100 100 50 300 1 -0.4 -1.6 Vdc -1.3 -2.6 Vdc 2 3 1.BASE 2.COLLECTOR 3.EMITTER SMALL-SIGNAL CHARACTERISTICS fT Ccbo Cibo Current Gain-Bandwidth Product (IC=-50mAdc, VCE=-20Vdc, f=100MHz) Output Capacitance (VCB=-10Vdc, IE=0, f=100kHz) Input Capacitance (VEB=-2.0Vdc, IC=0, f=100kHz) 200 MHz 8.0 pF 30.0 pF 12 30 300 65 ns ns ns ns SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time IC=150mA, IB1=-IB2=-15mA DIM A B C D E F G H J DIMENSIONS INCHES MM MAX MIN MAX 6.70 .248 .264 3.71 .130 .134 7.29 .264 .287 0.10 .001 .004 3.10 .114 .122 2.29 .090 1.55 1.80 .061 .071 0.23 0.33 .009 .013 0.82 --.032 --MIN 6.30 3.31 6.71 0.03 2.90 NOTE www.mccsemi.com Revision: 1 2004/09/27