PZT2907A
PNP
Plastic-Encapsulate
Transistors
Features
• Surface Mount SOT-223 Package
• Capable of 1000mWatts of Power Dissipation
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=-1mAdc, IB=0) -60 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-100µAdc, IE=0) -60 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=-100µAdc, IC=0) -5.0 Vdc
IEBO Emitter Cutoff Current
(VEB=-5Vdc, IC=0Vdc)
-50 nAdc
ICBO Collector Cutoff Current
(VCB=-50Vdc, IE=0)
-0.01
µAdc
ON CHARACTERISTICS
hFE DC Current Gain*
(IC=-0.1mAdc, VCE=--10Vdc)
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-150mAdc, VCE=-10Vdc)
(IC=-500mAdc, VCE=-10Vdc)
75
100
100
100
50
300
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
-0.4
-1.6
Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
-1.3
-2.6
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=-50mAdc, VCE=-20Vdc, f=-
100MHz)
200
MHz
Ccbo Output Capacitance
(VCB=-10Vdc, IE=0, f=100kHz)
8.0
pF
Cibo Input Capacitance
(VEB=-2.0Vdc, IC=0, f=100kHz)
30.0
pF
SWITCHING CHARACTERISTICS
td Delay Time 12 ns
tr Rise Time 30 ns
ts Storage Time
300 ns
tf Fall Time
IC=150mA, IB1=-IB2=-15mA
65 ns
DIMENSIONS
INCHES MM
DIM
MIN MAX MIN MAX NOTE
A 6.30 6.70 .248 .264
B 3.31 3.71 .130 .134
C 6.71 7.29 .264 .287
D 0.03 0.10 .001 .004
E 2.90 3.10 .114 .122
F 2.29 .090
G 1.55 1.80 .061 .071
H 0.23 0.33 .009 .013
J 0.82 --- .032 ---
SOT-223
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 1 2004/09/27
1 2
3.EMITTER
2.COLLECTOR
3
1.BASE
