TISP4070H3LM THRU TISP4115H3LM,
TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxH3LM Overvoltage Protector Series
NOVEMBER 1997 - REVISED JANUARY 2010
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxH3LM Overview
*RoHS COMPLIANT
This TISP® device series protects central offi ce, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxH3LM is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used.
These protectors have been specifi ed mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN
60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3LM meets the FCC Part 68 “B” ringer voltage requirement and survives the
Type A and B impulse tests. These devices are housed in a through-hole DO-92 package (TO-92 package with cropped center leg).
Summary Current Ratings
Summary Electrical Characteristics
Parameter ITSP
A
ITSM
A
di/dt
A/μs
Waveshape 2/10 1.2/50, 8/20 10/160 5/320 10/560 10/1000 1 cycle 60 Hz 2/10 Wavefront
Value 500 300 250 200 160 100 60 400
Part # VDRM
V
V(BO)
V
VT @ IT
V
IDRM
A
I(BO)
mA
IT
A
IH
mA
Co @ -2 V
pF
Functionally
Replaces
TISP4070H3 58 70 3 5 600 5 150 120 P0640EC†
TISP4080H3 65 80 3 5 600 5 150 120 P0720EC†
TISP4095H3 75 95 3 5 600 5 150 120 P0900EC†
TISP4115H3 90 115 3 5 600 5 150 120 P1100EC†
TISP4125H3 100 125 3 5 600 5 150 65
TISP4145H3 120 145 3 5 600 5 150 65 P1300EC†
TISP4165H3 135 165 3 5 600 5 150 65
TISP4180H3 145 180 3 5 600 5 150 65 P1500EC
TISP4220H3 160 220 3 5 600 5 150 65 P1800EC
TISP4240H3 180 240 3 5 600 5 150 55
TISP4250H3 190 250 3 5 600 5 150 55 P2300EC†
TISP4260H3 200 260 3 5 600 5 150 55
TISP4290H3 220 290 3 5 600 5 150 55 P2600EC†
TISP4300H3 230 300 3 5 600 5 150 55
TISP4350H3 275 350 3 5 600 5 150 55 P3100EC
TISP4395H3 320 395 3 5 600 5 150 55 P3500EC†
TISP4400H3 300 400 3 5 600 5 150 55
† Bourns part has an improved protection voltage
OBSOLETE
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxH3LM Overvoltage Protector Series
ITU-T K.20/21 Rating ............................ 8 kV 10/700, 100 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
Device Symbol
LM Package (Top View)
How to Order
LMF Package (LM Package with Formed Leads) (Top View)
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAT
1
2
3
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAKB
1
2
3
T
RSD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Low Differential Capacitance ......................................80 pF max.
................................................UL Recognized Component
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
fl ash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations
of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping
until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state
causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent
d.c. latchup as the diverted current subsides.
Device VDRM
V
V(BO)
V
‘4070 58 70
‘4080 65 80
‘4095 75 95
‘4115 90 115
‘4125 100 125
‘4145 120 145
‘4165 135 165
‘4180 145 180
‘4220 160 220
‘4240 180 240
‘4250 190 250
‘4260 200 260
‘4290 220 290
‘4300 230 300
‘4350 275 350
‘4395 320 395
‘4400 300 400
Waveshape Standard ITSP
A
2/10 µs GR-1089-CORE 500
8/20 µs IEC 61000-4-5 300
10/160 µs FCC Part 68 250
10/700 µs ITU-T K.20/21 200
10/560 µs FCC Part 68 160
10/1000 µs GR-1089-CORE 100
Device Package Carrier
TISP4xxxH3LM Straight Lead DO-92 (LM) Bulk Pack
Tape and Reeled
Formed Lead DO-92 (LMF) Tape and Reeled
TISP4xxxH3LM-S
TISP4xxxH3LMR-S
TISP4xxxH3LMFR-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
Order As
OBSOLETE
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxH3LM Overvoltage Protector Series
Description (Continued)
This TISP4xxxH3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied
in a DO-92 (LM) cylindrical plastic package. The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The
TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reel. For lower rated impulse currents in the DO-92 package, the 50 A
10/1000 TISP4xxxM3LM series is available.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating Symbol Value Unit
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
VDRM
± 58
± 65
± 75
± 90
±100
±120
±135
±145
±160
±180
±190
±200
±220
±230
±275
±320
±300
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
ITSP A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 300
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220
0.2/310 µs (I 31-24, 0.5/700 µs voltage wave shape) 200
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
ITSM
55
60
2.3
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A diT/dt 400 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH3LM must be in thermal equilibrium with TJ=25°C.
3. The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
OBSOLETE
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxF3LM Overvoltage Protector SeriesTISP4xxxH3LM Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
IDRM
Repetitive peak off-
state current VD = ±VDRM
TA = 25 °C
TA = 85 °C
±5
±10
V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE =
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
±70
±80
±95
±115
±125
±145
±165
±180
±220
±240
±250
±260
±290
±300
±350
±395
±400
V
V(BO)
Impulse breakover
voltage
dv/dt ≤ ±1000 Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A Linear current ramp,
Maximum ramp value = ±10 A
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4250
‘4260
‘4290
‘4300
‘4350
‘4395
‘4400
±78
±88
±103
±124
±134
±154
±174
±189
±230
±250
±261
±271
±301
±311
±362
±408
±413
V
I(BO) Breakover current dv/dt = ±750 V/ms, RSOURCE =±0.15 ±0.6 A
VTOn-state voltage IT=±5A, tW= 100 ±3V
IHHolding current IT=±5A, di/dt=-/+30mA/ms ±0.15 ±0.6 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV
IDOff-state current VD=±50 V TA = 85 °C±10 μA
OBSOLETE
TISP4xxxF3LM Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxH3LM Overvoltage Protector Series
Thermal Characteristics
Coff Off-state capacitance
f = 100 kHz, Vd=1V rms, V
D=0,
f = 100 kHz, Vd=1V rms, V
D=-1V
f = 100 kHz, Vd=1V rms, V
D=-2V
f = 100 kHz, Vd=1V rms, V
D=-50V
f = 100 kHz, Vd=1V rms, V
D= -100 V
(see Note 6)
4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4115
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
172
95
92
157
85
80
145
78
72
70
33
28
25
22
218
120
115
200
110
100
185
100
90
90
43
35
33
28
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD=-98V.
Parameter Test Conditions Min Typ Max Unit
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7) 105
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C55
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
OBSOLETE
TISP4xxxH3LM Overvoltage Protector Series
Parameter Measurement Information
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
-v
VDRM
IDRM
VD
IH
IT
VT
ITSM
ITSP
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
VD
ID
IH
IT
VT
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAAB
VDRM
IDRM
OBSOLETE
Figure 2. Figure 3.
Figure 4. Figure 5.
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
10-5
10-4
10-3
10-2
10-1
100
101
102TCHAS
VD = ±50 V
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.95
1.00
1.05
1.10 TC4HAF
VT - On-State Voltage - V
0.7 1.5 2 3 4 5 7110
IT - On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
TA = 25 °C
tW = 100 µs
TC4HACB
'4240
THRU
'4400
'4070
THRU
'4115
'4125
THRU
'4220
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4HAD
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxH3LM Overvoltage Protector Series
Typical Characteristics
OBSOLETE
TISP4xxxH3LM Overvoltage Protector Series
Typical Characteristics
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Figure 6. Figure 7.
VD - Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100150
Capacitance Normalized to VD = 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
TJ = 25 °C
Vd = 1 Vrms
TC4HAQA
'4125 THRU '4220
'4240 THRU '4400
'4070 THRU '4115
VDRM - Repetitive Peak Off-State Voltage - V
50 60 70 80 90 150 200 250 300100
C - Differential Off-State Capacitance - pF
40
45
50
55
60
65
70
75
80
85
90
C = Coff(-2 V) - Coff(-50 V)
TCHATB
'4070
'4080
'4095
'4125
'4145
'4165
'4180
'4260
'4300
'4350
'4400
'4240
'4115
'4220
'4250
'4290
'4395
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
OBSOLETE
Figure 10. Figure 11.
TAMIN - Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00 TI4HAIA
'4240 THRU '4440
'4125 THRU '4220
'4070 THRU '4115
TA - Ambient Temperature - °C
-40-30-20-100 1020304050607080
Impulse Current - A
90
100
120
150
200
250
300
400
500
600
700
IEC 1.2/50, 8/20
ITU-T 10/700
FCC 10/560
BELLCORE 2/10
BELLCORE 10/1000
FCC 10/160
TC4HAA
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
IMPULSE RATING
vs
AMBIENT TEMPERATURE
TISP4xxxH3LM Overvoltage Protector Series
Rating and Thermal Information
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Figure 8. Figure 9.
t - Current Duration - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
9
15
20
30
10
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
t - Power Duration - s
0·1 1 10 100 1000
ZθJA(t) - Transient Thermal Impedance - °C/W
2
3
4
5
6
8
15
20
30
40
50
60
80
150
10
100
TI4HAG
ITSM(t) APPLIED FOR TIME t
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
THERMAL IMPEDANCE
vs
POWER DURATION
OBSOLETE
TISP4xxxH3LM Overvoltage Protector Series
Deployment
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
APPLICATIONS INFORMATION
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors
(Figure 12) or in multiples to limit the voltage at several points in a circuit (Figure 13).
Figure 12. Two Point Protection Figure 13. Multi-point Protection
Th1
Th3
Th2
Th1
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This confi guration is normally used to
protect circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each
conductor and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its
±V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then
protector Th1 is not required.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave
forms. The table below shows some common values.
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fi ctive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verifi cation over a
temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40 °C to 85 °C.
Standard
Peak Voltage
Setting
V
Voltage
Waveform
µs
Peak Current
Value
A
Current
Waveform
µs
TISP4xxxH3
25 °C Rating
A
Series
Resistance
Ω
GR-1089-CORE 2500 2/10 500 2/10 500 0
1000 10/1000 100 10/1000 100
FCC Part 68
(March 1998)
1500 10/160 200 10/160 250 0
800 10/560 100 10/560 160 0
1500 9/720 † 37.5 5/320 † 200 0
1000 9/720 † 25 5/320 † 200 0
I3124 1500 0.5/700 37.5 0.2/310 200 0
ITU-T K.20/K 21 1500
4000 10/700 37.5
100 5/310 200 0
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
AC Power Testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be
terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coeffi cient) resistors and fusible resistors are overcurrent
protection devices which can be used to reduce the current fl ow. Protective fuses may range from a few hundred milliamperes to one am-
pere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current
versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further time
limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
OBSOLETE
TISP4xxxH3LM Overvoltage Protector Series
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
APPLICATIONS INFORMATION
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible,
values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given
in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be
about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at
-50 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating
the ring trip circuit.
Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the
maximum normal system voltages. The TISP4260H3LM, with a VDRM of 200 V, can be used for the protection of ring generators producing
100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However,
this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an
unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature
when the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of
-28 °C. In this example, the TISP4260M3LM will allow normal equipment operation provided that the minimum expected ambient temperature
does not fall below -28 °C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defi nes two test PCBs for surface mount components; one for
packages smaller than 27 mm (1.06 ’’) on a side and the other for packages up to 48 mm (1.89 ’’). The LM package measurements used the
smaller 76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ’’) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal
resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resis-
tance and so can dissipate higher power levels than indicated by the JESD51 values.
OBSOLETE
Figure 14. MODEM INTER-WIRE PROTECTION Figure 15. PROTECTION MODULE
Figure 16. ISDN PROTECTION
Figure 17. LINE CARD RING/TEST PROTECTION
FUSE
TISP4350
OR
TISP4400
AI6XBM
RING DETECTOR
HOOK SWITCH
D.C. SINK
SIGNAL
MODEM
RING
WIRE
TIP
WIRE R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
PROTECTED
EQUIPMENT
E.G. LINE CARD
AI6XBK
R1a
R1b
Th3
Th2
Th1
AI6XBL
SIGNAL
D.C.
TEST
RELAY
RING
RELAY
SLIC
RELAY
TEST
EQUIP-
MENT RING
GENERATOR
S1a
S1b
R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
Th4
Th5
SLIC
SLIC
PROTECTION
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
S3a
S3b
VBAT
C1
220 nF
AI6XBJ
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
TISP4xxxH3LM Overvoltage Protector Series
Typical Circuits
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
OBSOLETE
TISP4xxxH3LM Overvoltage Protector Series
Device Symbolization Code
MECHANICAL DATA
Devices will be coded as below.
Carrier Information
Devices are shipped in one of the carriers below. A reel contains 2,000 devices.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Offi ce.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Device Symbolization
Code
TISP4070H3LM 4070H3
TISP4080H3LM 4080H3
TISP4095H3LM 4095H3
TISP4115H3LM 4115H3
TISP4125H3LM 4125H3
TISP4145H3LM 4145H3
TISP4165H3LM 4165H3
TISP4180H3LM 4180H3
TISP4220H3LM 4220H3
TISP4240H3LM 4240H3
TISP4250H3LM 4250H3
TISP4260H3LM 4260H3
TISP4290H3LM 4290H3
TISP4300H3LM 4300H3
TISP4350H3LM 4350H3
TISP4395H3LM 4395H3
TISP4400H3LM 4400H3
Package Type Carrier
Straight Lead DO-92 Bulk Pack
Straight Lead DO-92 Tape and Reeled
Formed Lead DO-92 Tape and Reeled
TISP4xxxH3LM-S
TISP4xxxH3LMR-S
TISP4xxxH3LMFR-S
Order As
OBSOLETE
