©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
FPDB60PH60B
Smart Power Module for Front-End Rectifier
General Description
FPDB60PH60B is an advanced smart power module of
PFC(Power Factor Correction) that Fairchild has newly
developed and designed mainly targeting mid-power
application especially for an air conditioners. It combines
optimized circuit protection and drive IC matched to high
frequency switching IGBTs. System reliability is futher
enhanced by the integrated under-voltage lock-out and
over-current protection function.
Features
• Low thermal resistance due to AlN-DBC substrate
• 600V-6 0A 2- ph as e IGB T PW M se mi - c on v er t e r i nc l ud in g
a drive IC for gate driving and protection
• Typical switching frequency of 20kHz
• Isolation rating of 2500Vrms/min.
Applications
• AC 180V ~ 264V single-phase front-end rectifier
Fig. 1.
26.8mm
44mm
Top View Bottom View
26.8mm
44mm
Top View Bottom View
February, 2009
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Integrated Power Functions
• PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault
• Input interface: 5V CMOS /LS TTL comp atib le, Sch mit t trigge r input
Pin Configuration
Fig. 2.
Top View
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(21) VAC-
(22) NSENSE
(23) N
(27) PR
(15) NC
(16) NC
(17) NC
(18) NC
(19) RTH
(20) VTH
(24) N
(25) R
(26) S
Case Temperature (TC)
Detecting Point
DBC Substrate
(7) C FOD
(8) C SC
(9) N C
(10) NC
(11) NC
(12) NC
(13) NC
(14) NC
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(21) VAC-
(22) NSENSE
(23) NC
(27) PR
(15) NC
(16) NC
(17) NC
(18) NC
(19) RTH
(20) VTH
(24) N
(25) R
(26) S
Case Temperature (TC)
Detecting Point
DBC Substrate
(7) C FOD
(8) C SC
(9) N C
(10) NC
(11) NC
(12) NC
(13) NC
(14) NC
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(21) VAC-
(22) NSENSE
(23) N
(27) PR
(15) NC
(16) NC
(17) NC
(18) NC
(19) RTH
(20) VTH
(24) N
(25) R
(26) S
Case Temperature (TC)
Detecting Point
DBC Substrate
(7) C FOD
(8) C SC
(9) N C
(10) NC
(11) NC
(12) NC
(13) NC
(14) NC
(1) VCC(L)
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(21) VAC-
(22) NSENSE
(23) NC
(27) PR
(15) NC
(16) NC
(17) NC
(18) NC
(19) RTH
(20) VTH
(24) N
(25) R
(26) S
Case Temperature (TC)
Detecting Point
DBC Substrate
(7) C FOD
(8) C SC
(9) N C
(10) NC
(11) NC
(12) NC
(13) NC
(14) NC
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Pin Descriptions
Internal Equivalent Circuit and Input/Output Pins
Note :
1) Converter is compose d of tw o IGBTs including four diodes and one IC which has gate driving and protection functions.
Fig. 3.
Pin Number Pin Name Pin Description
1V
CC Common Bias Voltage for IC and IGBTs Driving
2 COM Common Supply Ground
4IN
(R) Signal Input for Low-side R-phase IGBT
5IN
(S) Signal Input for Low-side S-phase IGBT
6V
FO Fault Output
7C
FOD Capacitor for Fault Output Duratio n Time Selection
8C
SC Capacitor (Low-pass Filter) for Over Current Detection
19 R(TH) NTC Thermistor terminal
20 V(TH) NTC Thermistor terminal
21 VAC- Current Sensing Terminal
22 NSENSE Current Sensing Reference Terminal
24 N Negative Rail of DC–Link
25 R Output for R Phase
26 S Output for S Phase
27 PRPositive Rail of DC–Link
3, 9~18, 23 NC No Connection
CSC
CFOD
VFO
IN(S)
IN(R)
COM
VCC
OUT(S)
OUT(R)
(20) VTH
(19) RTH
(8) C SC
(7) C FOD
(6) V FO
(5) IN (S)
(4) IN (R)
(2) C O M
(1) V C C
(27 ) PR
(26 ) S
(25 ) R
(23 ) NC
(22 ) NSENSE
(21 ) VAC-
Shunt
Resistor
NTC
Thermistor
Q1 Q2
D1
D3
D2
D4
(24 ) N
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Converter Part
Note :
1. The maximum junction temper at ure rating of the power chips integrated within the SPM is 150°C(@TC≤100°C). How ever, to insure safe operation of the SPM,
the average junction temperature should be limited to TJ(ave) ≤125°C (@TC≤100°C).
Control Part
Total System
Thermal Resistance
Note :
2. For the measurement point of case temperature(TC), please refer t o Fig. 2.
Item Symbol Condition Rating Unit
Supply Voltage ViApplied between R-S 264 VRMS
Supply Voltage (Surge) Vi(Surge) Applied between R-S 500 V
Output Voltage VPN Applied between P- N 450 V
Output Voltage (Surge) VPN(Surge) Applied between P- N 500 V
Collector-emitter Voltage VCES 600 V
Each IGBT collector current ±ICTC = 25°C 60 A
Each IGBT collector current (Peak) ±ICP TC = 25°C, Under 1ms pulse width 90 A
Collector Dissipation PCTC = 25°C per One IGBT 178 W
Repetitive Peak Reverse Voltage VRRM 600 V
Peak Forward Surge Current IFSM Single half sine-wave 350 A
Power Rating of Shunt Resistor PRSH TC < 125°C 2 W
Operating Junction Temperature TJ(Note 1) -40 ~ 150 °C
Item Symbol Condition Rating Unit
Control Supply Voltage VCC Applied between VCC - COM 20 V
Input Signal Voltage V IN Applied between IN - COM -0.3~17 V
Fault Output Supply Voltage VFO Applied between VFO - COM -0.3~VCC+0.3 V
Fault Output Current IFO Sink Current at VFO Pin 5 mA
Current Sensing Input Voltage VSC Applied between CSC - COM -0.3~VCC+0.3 V
Item Symbol Condition Rating Unit
Module Case Operation Temperature TC-20 ~ 100 °C
Storage Temperature TSTG -40 ~ 150 °C
Isolation Voltage VISO 60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC 2500 Vrms
Item Symbol Condition Min. Typ. Max. Unit
Junction to Case Thermal
Resistance
(Referenced to PKG cen-
ter)
Rθ(j-c)Q IGBT - - 0.7 °C/W
Rθ(j-c)HD High-side diode - - 1.5 °C/W
Rθ(j-c)LD Low-side diode - - 0.85 °C/W
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Converter Part
Note
3. tON and tOFF include the propagation delay time of the int ernal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate dr iving condition
internally. For the detailed information, please see Fig. 4
Control Part
Note
4. The fault-out pulse width tFOD depends on the capacitance va lue of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
Recommended Operating conditions
Item Symbol Condition Min. Typ. Max. Unit
IGBT saturation voltage VCE(sat) VCC =15V, VIN = 5V; IC =50A - 2.0 2.5 V
High-side diode voltage VFH IF = 50A - 2.4 2.9 V
Low-side diode voltage VFL IF = 50A - 1.2 1.6 V
Switching Times tON VPN = 400V, VCC = 15V, IC =60A
VIN = 0V ↔ 5V, Inductive Load
(Note 3)
-560-ns
tC(ON) -270-ns
tOFF -520-ns
tC(OFF) -110-ns
trr -44-ns
Irr -6.5-A
Current sensing resistor RSENSE 1.8 2.0 2.2 mΩ
Collector - emitter
Leakage Current ICES VCE = VCES --250μA
Item Symbol Condition Min. Typ. Max. Unit
Quiescent VCC Supply Cur-
rent IQCCL VCC = 15V, IN = 0V VCC - COM - - 26 mA
Fault Output Voltage VFOH VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V
VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V
Over Current Trip Level VSC(ref) VCC = 15V 0.45 0.5 0.55 V
Supply Circuit Under-
Vo ltage Protec tion UVCCD Detection Level 10.7 11.9 13.0 V
UVCCR Reset Level 11.2 12.4 13.2 V
Fault-out Pulse Width tFOD CFOD = 33nF (Note 4) 1.4 1.8 2.0 ms
ON Threshold Voltage VIN(ON) Appl ied be twe en IN - COM 3.0 - - V
OFF Threshold Voltage VIN(OFF) --0.8V
Resistance of Thermistor RTH @ TC = 25°C (Note Fig. 9) - 50 - kΩ
@ TC = 80°C (Note Fig. 9) - 5.76 - kΩ
Item Symbol Condition Min. Typ. Max. Unit
Input Supply Voltage VIA ppl ied be twe en R - S 180 - 264 Vrms
Output Voltage VPN Applied betwe en P - N - 280 400 V
Control Supply Voltage VCC Applied betwe en VCC - COM 13.5 15 16.5 V
Control Supply Variation dVCC/dt Applied between IN - COM -1 - 1 V/μs
PWM Input Signal fPWM TC ≤ 100°C, TJ ≤ 125°C, Per IGBT - 20 - kHz
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Electrical Characteristics
Fig. 4. Switching Time Definition
Mechanical Characteris tics and Ratings
Fig. 5. Flatness Measurement Position
Item Condition Limits Units
Min. Typ. Max.
Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 0.72 N•m
Device Flatness Note Fig. 5 0 - +120 μm
Weight -15.00- g
tON tC(ON)
trr
Irr
10% of IC
100% of IC
90% of IC
120% of IC
10% of VCE
(a ) T u rn -o n
tOFF
tC(OFF)
(b ) T u rn -off
IC
VCE
VCE
IC
VIN VIN
10% o f VCE
10% of IC
(+)
(+)
(+)
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Time Charts of SPMs Protective Function
P1 : Normal operation - IGBT ON and conducting current
P2 : Under voltage detectio n
P3 : IGBT gate interrupt
P4 : Fault signal generation
P5 : Under voltage reset
P6 : Normal operation - IGBT ON and conducting current
Fig. 6. Under-Voltage Protection
P1 : Normal operation - IGBT ON and conducting current
P2 : Over current detection
P3 : IGBT gate interrupt / Fault signal generation
P4 : IGBT is slowly turned off
P5 : IGBT OFF signal
P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation
P7 : IGBT OFF state
P8 : Fault Output reset and normal operation start
Fig. 7. Over Current Protection
In te rn a l IGB T
Ga te -E mitte r Vo lta g e
Input S ignal
O utput C urrent
Fault O utput Signal
C ontrol Supply Voltage
P1
P2
P3
P4
P6
P5
UV
detect
UV
reset
In te rn a l IGBT
G ate-E m itter V oltage
In p u t Sig n a l
Ou tp u t Cu rre n t
Sensing Voltage
Fault O utput Signal
P1
P2
P3
P4
P6
P5
P7
P8
OC R e fe re n c e
Voltage (0.5V )
RC Filter Delay
OC Detection
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Note :
1) For the over-current prot ection, please set the delay time in the range 3~4μs.
Fig. 8. Application Example
CSC
CFOD
VFO
IN(S)
IN(R)
COM
VCC
OUT(S)
OUT(R)
VTH
RTH
CSC
CFOD
VFO
IN(S)
IN(R)
COM
VCC
PR
S
R
N
NSENSE
VAC-
Shunt
Resistor
NTC
Thermistor
Microcontroller
or
DSP
+5V
Vac
Inverter
PFCM
R-T G r aph
0
20
40
60
80
100
120
20 30 40 50 60 70 80 90 100 110 120 130
Temperature [°C]
Resistance [kΩ]
Fig. 9. R-T Curve of the Built-in Thermistor
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Detailed Package Outline Drawings
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Detailed Package Outline Drawings
©2009 Fairchild Semiconductor Corporation
FPDB60PH60B
February, 2009
Detailed Package Outline Drawings
©2009 Fairchild Semiconductor Corporation February, 2009
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the bo dy,
or (b) su pport or su stain li fe, or (c ) whose fai lure to pe rform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical compon ent is any comp onent of a life su pport
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor res erve s the righ t to make cha ng es at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinu ed by Fair chil d semic on duc tor.
The datasheet is printed for reference information only.
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