PD - 95202 IRF7402PbF Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free Description HEXFET(R) Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 20V RDS(on) = 0.035 Top View Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 6.8 5.4 54 2.5 1.6 0.02 12 5.0 -55 to + 150 Units A W W/C V V/ns C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. Units 50 C/W 1 9/30/04 IRF7402PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.70 6.1 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.024 --- V/C Reference to 25C, ID = 1mA 0.035 VGS = 4.5V, ID = 4.1A 0.050 VGS = 2.7V, ID = 3.5A --- --- V VDS = VGS, ID = 250A --- --- S VDS = 10V, ID = 1.9A --- 1.0 VDS = 16V, VGS = 0V A --- 25 VDS = 16V, V GS = 0V, TJ = 125C --- 100 VGS = 12V nA --- -100 VGS = -12V 14 22 ID = 3.8A 2.0 3.0 nC VDS = 16V 6.3 9.5 VGS = 4.5V, See Fig. 6 and 12 5.1 --- VDD = 10V 47 --- ID = 3.8A ns 24 --- RG = 6.2 32 --- R D = 2.6 650 --- VGS = 0V 300 --- pF VDS = 15V 150 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- 2.5 --- --- 54 --- --- --- --- 51 69 1.2 77 100 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 3.8A, VGS = 0V TJ = 25C, IF = 3.8A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Pulse width 300s; duty cycle 2%. ISD 3.8A, di/dt 96A/s, VDD V(BR)DSS, TJ 150C When mounted on 1 inch square copper board, t<10 sec 2 This data sheet has curves & data from IRF7601 www.irf.com IRF7402PbF 100 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 10 1 20s PULSE WIDTH TJ = 25C A 1.5V 0.1 0.1 1 10 10 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150C TJ = 25C V DS = 10V 20s PULSE WIDTH 2.0 2.5 3.0 A 3.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 Fig 2. Typical Output Characteristics 2.0 1.5 1 VDS , Drain-to-Source Voltage (V) 100 0.1 20s PULSE WIDTH TJ = 150C A 0.1 0.1 Fig 1. Typical Output Characteristics 1 1.5V 1 VDS , Drain-to-Source Voltage (V) 10 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D TOP I D = 3.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 A 80 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7402PbF 1000 C, Capacitance (pF) Ciss 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS, Gate-to-Source Voltage (V) 1200 800 Coss 600 400 Crss 200 0 1 10 100 I D = 3.8A VDS = 16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 12 16 20 24 A Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) 8 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 100 10 TJ = 150C TJ = 25C 1 VGS = 0V 0.1 0.4 0.8 1.2 1.6 2.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 4 A 2.4 100us 10 1ms 1 TC = 25 C TJ = 150 C Single Pulse 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7402PbF 8.0 RD V DS ID , Drain Current (A) VGS 6.0 D.U.T. RG + - V DD 4.5V 4.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7402PbF Current Regulator Same Type as D.U.T. 50K .2F 12V QG .3F 4.5V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 12b. Gate Charge Test Circuit 0.3 RDS(on) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to-Source On Resistance ( ) Fig 12a. Basic Gate Charge Waveform 0.2 0.1 0.0 0 3 6 I 9 12 15 , , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current 6 ID Current Sampling Resistors 0.05 0.04 ID, = 5.7A 0.03 0.02 2 4 6 8 V /5 , Gate-to-Source Voltage (V) Fig 14. Typical On-Resistance Vs. Gate Voltage www.irf.com A IRF7402PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 6 8 7 6 5 1 2 3 4 H E 0.25 [.010] A e1 MIN 1.35 1.75 A1 .0040 .0098 0.10 0.25 8X b MAX b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 0.25 [.010] MILLIMETERS MAX .0688 e1 6X e INCHES MIN .0532 A y 0.10 [.004] A1 8X L 8X c 7 C A B FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: THIS IS AN IRF7101 (MOSFET) INTERNATIONAL RECTIFIER LOGO XXXX F7101 DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER www.irf.com 7 IRF7402PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com