1
MRF1150MA MRF1150MBMOTOROLA RF DEVICE DATA
The RF Line
 
 
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Base Voltage VCBO 70 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current — Peak (1) IC12 Adc
Total Device Dissipation @ TC = 25°C (1) (2)
Derate above 25°CPD583
3.33 Watts
W/°C
Storage Temperature Range Tstg 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) RθJC 0.3 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0) V(BR)CES 70 Vdc
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0) V(BR)CBO 70 Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0) ICBO 10 mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 30
NOTES: (continued)
1. Pulse Width = 10 µs, Duty Cycle = 1%.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80 µs Pulse on Tektronix 576 or equivalent.
Order this document
by MRF1150MA/D

SEMICONDUCTOR TECHNICAL DATA


150 W PEAK, 9601215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332–04, STYLE 1
(MRF1150MA)
CASE 332A–03, STYLE 1
(MRF1150MB)
Motorola, Inc. 1997
REV 8
MRF1150MA MRF1150MB
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob 25 32 pF
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz) GPB 7.8 9.8 dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz) η35 40 %
Load Mismatch
(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψNo Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1 µF/100 V
C4 — 47 µF/75 V Electrolytic
L1, L2 — 3 T urns #18 AWG, 1/8 ID
Z1Z10 — Distributed Microstrip Elements — See Photomaster
Board Material — 0.031 Thick Teflon–Fiberglass, εr = 2.5
RF
OUTPUT
DUT
RF
INPUT
VCC = 50 Vdc
C2 C3 C4
L1
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C2
+
+
Z10
L2
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
200
150
100
50
05101520250 P
in, INPUT POWER (W ATTS pk)
P , OUTPUT POWER (WATTS pk)
out
f, FREQUENCY (MHz)
P , OUTPUT POWER (WATTS pk)
out
VCC = 50 V
tp = 10
µ
s
D = 1%
Pin = 20 W pk
VCC = 50 V
tp = 10
µ
s
D = 1%
f = 960 MHz
1090 MHz
1215 MHz
200
150
100
50
0960 1090 1215
17.5 W pk
12.5 W pk
10 W pk
15 W pk
3
MRF1150MA MRF1150MBMOTOROLA RF DEVICE DATA
Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency
Figure 6. Series Equivalent Input/Output Impedance
f
MHz Zin
Ohms ZOL*
Ohms
960
1090
1215
1.5 + j9.6
5.0 + j7.5
2.4 + j5.6
2.6 + j4.1
2.7 + j4.6
2.8 + j5.3
Pout = 150 W pk VCC = 50 V
tp = 10 µs D = 1%
GPB, POWER GAIN (dB)
f = 1090 MHz
tp = 10
µ
s
D = 1%
Po = 150 W pk
VCC = 50 V
tp = 10
µ
s
D = 1%
20 10 20 30 40 500 VCC, SUPPLY VOLTAGE (VOLTS)
P , OUTPUT POWER (WATTS pk)
out
14
12
10
8
6
4960 1090 1215
f, FREQUENCY (MHz)
515253545
P
in = 20 W pk
17.5 W pk
12.5 W pk
15 W pk
10 W pk
200
150
100
50
ZOL* = Conjugate of the optimum load
ZOL* = impedance into which the device
ZOL* = output operates at a given output
ZOL* = power, voltage, and frequency .
Zin f = 960 MHz
1215
ZOL*
1090
0
5.0
10
f = 960 MHz
1215
1090
15
5.0
10
15
Figure 7. Typical Pulse Performance
Pout = 150 W pk
VCC = 50 V
tp = 10
µ
s
D = 1%
SCALE
2
µ
s/DIV
MRF1150MA MRF1150MB
4MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 332–04
ISSUE D
(MRF1150MA)
NOTES:
1. DIMENSION K APPLIES TWO PLACES.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1973.
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
SEATING
PLANE
–T–
K
M
L
D
A
4
13
2
8–32 UNC 2A
F
H
E
UC
N
–B–
J
M
0.76 (0.030) B M
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A6.86 7.62 0.270 0.300
B6.10 6.60 0.240 0.260
C16.26 16.76 0.640 0.660
D4.95 5.21 0.195 0.205
E1.40 1.65 0.055 0.065
F2.67 4.32 0.105 0.170
H1.40 1.65 0.055 0.065
J0.08 0.18 0.003 0.007
K15.24 ––– 0.600 –––
L2.41 2.67 0.095 0.105
M45 NOM 45 NOM
N4.97 6.22 0.180 0.245
U2.92 3.68 0.115 0.145
__
CASE 332A–03
ISSUE D
(MRF1150MB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
K
F
D
SEATING
1
4
3
2
PLANE
HAJ
C
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.270 0.290 6.86 7.36
C0.115 0.135 2.93 3.42
D0.195 0.205 4.96 5.20
F0.095 0.105 2.42 2.66
H0.050 0.070 1.27 1.77
J0.003 0.007 0.08 0.17
K0.600 ––– 15.24 –––
5
MRF1150MA MRF1150MBMOTOROLA RF DEVICE DATA
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MRF1150MA/D