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MICROWAVE SILICON COMPONENTS
Contents
CONTENTS
CONTENTS
INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2
SILICON PIN DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-4
SCHOTTKY DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-28
TUNING VARACTORS DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-31
POWER GENERATION DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-40
CASE STYLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-47
MOS CAPACITORS: Please consult page 7-39 of this catalog
MICROWAVE SILICON COMPONENTS
PAGE
Spirit of New
Technology
All specifications contained in that catalog are subject to change without notice.
12-2
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MICROWAVE SILICON COMPONENTS
Introduction
This part of the Microwave section presents TEMEX product lines including:
receiving diodes
control diodes
tuning varactors
multiplier varactors
step recovery diodes
high voltage PIN diodes
TEMEX products are available in a complete assortment of pack ages including:
chips
standard
surface mount ceramic and plastic
non magnetic
custom
IN-HOUSE PRODUCTION
The silicon slice is the in-house starting point of TEMEX product manufacturing. From the virgin w afer,
TEMEX performs all functions, including:
epitaxy
diffusion
photomasking
metallization
passivation
dicing
packaging
control and burn-in
TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottk y metallurgies, all
junction passivations, and all mesa operations.
INTRODUCTION
MICROWAVE SILICON COMPONENTS
Symbols
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Cb. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case Capacitance
Cj. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction Capacitance
CT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Capacitance
CX/Cy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tuning Ratio
f. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Test Frequency
FCO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cut-off Frequency
FI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Input
FIF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Intermediate Frequency
FO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Frequency
Foper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating frequency
IF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Continuous Current
IR. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Continuous Current
IRP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Pulse Current
L. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Conversion Loss
N/A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Not Applicable
NFSSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Sideband Noise Figure
NFIF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure of Intermediate Frequency
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gold Contact Diameter
PCW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CW Power Capability
Pdiss . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation
Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Input
PL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Limiting Threshold
PLO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Local Oscillator Power
PO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Power
PRF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF Power
Q-X. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure of Merit
RSF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Series Resistance
Rth . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance
RV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Video Resistance
τI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Minority Carrier Lifetime
TCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Switching Time
Tj. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction T emperature
tSO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Snap-off Time
TSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tangential Sensitivity
VBR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Breakdown V oltage
VF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Continuous Voltage
VR. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applicable Voltage (RF + bias)
VSWR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Voltage Standing Wave Ratio
VT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Threshold Voltage
VTO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Threshold V oltage
ZIF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Impedance at Intermediate Frequency
ZO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Impedance
SYMBOLS
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SILICON PIN DIODES
Selection guide
SILICON PIN DIODES
Selection Guide
PAGE
HOW TO SPECIFY A PIN DIODE? 12-5
SURFACE MOUNT PACKAGE
- PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 12-6
- PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 12-8
- LOW COST SQUARE CERAMIC PACKAGE PIN DIODES 12-10
- SQUARE CERAMIC PIN DIODES 12-12
- NON MAGNETIC SQUARE CERAMIC PACKAGE 50 0 V PIN DIODES 12-15
HIGH VOLTAGE PIN DIODES 12-17
- SWITCHING & PHASE SHIFTING APPLICATIONS 12-18
- TWO AND THREE PORTS RF PIN SWITCH MODULES 12-20
MICROWAVE APPLICATIONS 12-22
- ULTRAFAST SWITCHING SILICON PIN DIODES 12-23
- FAST SWITCHING SILICON PIN DIODES 12-24
- ATTENUATOR SILICON PIN DIODES 12-25
- SILICON LIMITER PIN DIODES 12-26
SILICON PIN DIODES
How to specify a PIN diode
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HOW TO SPECIFY A PIN DIODE ?
1. Application
switch
attenuator
limiter
2. Fr equency and bandwidth r equir ements
3. Power characteristics
peak
average
pulse duration and duty cycle
4. Switching time
5. Bias conditions
forward
reverse
6. Circuit impedance
7. Shunt or series assembly
8. Maximum loss expected
9. Minimum isolation needed
10.VSWR and distortion requirements
11.Power applied to the diode
forward biased
reverse biased
during switching
12. Static characteristics
applicable voltage: VR
total capacitance: CT
(in space charge)
forward series resistance: RSF
carrier lifetime τl
thermal resistance: Rth
13.Mechanical and pac kaging constraints
To obtain the PIN diodes best suited for a specific application, consider the following:
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SILICON PIN DIODES
Plastic package Surface Mount switching silicon PIN diodes
Description
TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package.
This product family is designed for a low cost, medium to high volume market that may be supplied
in tape and reel for automated pick and place assembly on surface mount circuit boards.
The use of this technology eliminates wire bonding on to the chips.
Applications
The DH50XXX series PIN diodes are offered in a large selection of capacitance range (.3 pF to 1.2 pF)
and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching
time and low switching current.
TEMEX’ diodes are designed to cover a broad range of CW low power (up to 2 W), medium peak
power, RF and microwave applications (up to 3 GHz).
Main applications include: SPST and SPDT switches, antenna (Wireless Communication Systems)
and filter switches, phase shifters ....
Note: To reduce the distortion, it is necessary to verify and design with the following formula:
ÎHF
πτlIDC F
ÎHF : RF peak current (A)
τl: Diode minority carrier lifetime(s)
IDC : DC bias current (A)
πF : Application frequency (Hz)
PLASTIC PACKAGE SURFACE MOUNT SWITCHING
SILICON PIN DIODES
<< 1
PACKAGED DIODES
SILICON PIN DIODES
Plastic package Surface Mount switching silicon PIN diodes
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Characteristics @ Ta = +25° C
(1) : Other breakdown values on request (4) : VR= 20 V at F = 1 MHz
(2) : Other capacitance values on request (5) : RSF at IF= 5 mA
(3) : VR= 5 V at F = 1 MHz
Temperature ranges:
Operating junction (Tj) : -55° C to +125° C Storage : -55° C to +150° C
Packages
SOD323 SOT23 SOT23 SOT23 SOT143
Packages
DH50051 DH50051-60 DH50051-51 DH50051-53 DH50051-54 DH50051-70
DH50058 DH50058-60 DH50058-51 DH50058-53 DH50058-54 DH50058-70
DH50053 DH50053-60 DH50053-51 DH50053-53 DH50053-54 DH50053-70
DH50103 DH50103-60 DH50103-51 DH50103-53 DH50103-54 DH50103-70
DH50109 DH50109-60 DH50109-51 DH50109-53 DH50109-54 DH50109-70
DH50203 DH50203-60 DH50203-51 DH50203-53 DH50203-54 DH50103-70
DH50209 DH50209-60 DH50209-51 DH50209-53 DH50209-54 DH50209-70
DH80051 DH80051-60 DH80051-51 DH80051-53 DH80051-54 DH80051-70
(1) Other configuration available on request.
How to order?
DH50051 - 51 T3
Diode type Package Conditioning
information
51: single SOT23 T3: 30 0 0 pieces
53: dual common tape & reel
cathode SOT23 T10: 10000 pieces
54: dual common tape & reel
anode SOT23 blank: bulk
60: single SOD323
70: dual SOT143
Breakdown Total Series Minority carrier
voltage (VBR (1))capacitance (CT(2)) resistance (RSF) lifetime (τI)
Test conditions IR= 10 µA F = 1 MHz IF= 10 mA IF= 10 mA
VR= 50 V F = 120 MHz IR= 6 mA
Type VpFns
min. max max typ.
DH50051 35 0.3 (3) 2.5 (5) 150
DH50058 35 1 (3) 0.5 200
DH50053 50 0.35 (4) 1.5 200
DH50103 100 0.35 3 500
DH50109 100 1.2 0.6 1000
DH50203 200 0.35 3 500
DH50209 200 1.2 0.6 1000
DH80051 400 0.6 2 2000
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SILICON PIN DIODES
Plastic package Surface Mount attenuating silicon PIN diodes
PLASTIC PACKAGE SURFACE MOUNT ATTENUATING
SILICON PIN DIODES
Description
TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package.
This product family is designed for a low cost, medium to high volume market that may be supplied
in tape and reel for automated pick and place assembly on surface mount circuit boards.
The use of this technology eliminates wire bonding on to the chips.
Applications
Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits,
from MHz to several GHz.
The attenuating Pin diode uses properties of variation of forward series resistance versus the DC
forward bias cur rent. In order to obtain the best dynamic range, a single diode at tenuator may be used
in series or shunt configuration or designed as a multiple diode circuit (T or p circuit), where the device
may be matched through the attenuation range.
Note:To reduce the distortion, it is necessary to verify and design with the following formula:
ÎHF
πτlIDC F
ÎHF : RF peak current (A)
τl: Diode minority carrier lifetime(s)
IDC : DC bias current (A)
F : Application frequency (Hz)
<< 1
0.1 1 10
1
10
100
1000
RSF ()Typical series resistance versus forward current
IF (mA)
DH40144
DH40225
DH40141
Typical performance curve
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SILICON PIN DIODES
Plastic package Surface Mount attenuating silicon PIN diodes
Electrical I Zone Forward series Junction Reverse Carrier
Parameters thickness resistance Rsf ()capacitance current lifetime
(1) Cj(2) IRτI
typ. min. max min. max min. max typ. max max typ.
DH40141 140 400 800 50 100 6.5 13 0.05 0.10 10 2.5
DH40144 140 200 400 25 50 3.5 7 0.10 0.30 10 5.0
DH40225 220 400 800 50 100 6.5 13 0.10 0.30 10 7.0
IF= 0.1 mA IF= 1 mA IF= 10 mA pF µA µs
Test conditions µm F = 120 MHz F = 1 MHz VR= 100 V IF= 10 mA
IR= 6 mA
(1) Other I zone thicknesses on request
(2) Other capacitance values on request (measured at 50 V)
Temperature ranges:
Operating junction (Tj) : - 55° C to + 125° C
Storage : - 65° C to + 150° C
Electrical characteristics at 25° C
Type
Packages
SOD323 SOT23 SOT143
Packages
DH40141 DH40141-60 DH40141-51 DH40141-70
DH40144 DH40144-60 DH40144-51 DH40144-70
DH40225 DH40225-60 DH40225-51 DH40225-70
(1) Other configuration available on request.
How to order?
DH40141 - 51 T3
Diode type Package Conditioning
information
51: single SOT23 T3: 30 0 0 pieces
53: dual common tape & reel
cathode SOT23 T10: 10000 pieces
54: dual common tape & reel
anode SOT23 blank: bulk
60: single SOD323
70: dual SOT143
87: SOT323
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SILICON PIN DIODES
Low cost square ceramic pack age PIN diodes
TEMEX is manufacturing a square PIN diode
for surface mount applications. The chip inside
is passivated to ensure high reliability and very
low leakage current. These diodes ensure high
power switching at frequencies from HF to few
GHz. This package utilizes ceramic package
technology with low inductance and leadless
faced package. The design simplifies automatic
pick and place indexing and assembly.
The termination contacts are tin plated for
vapor or reflow circuit board soldering. The
active area is a PIN glass passivated chip, which
can be designed to customer specifications.
Low loss, low distortion
Low inductance
High reliability
Hermetically sealed pack age
Non rolling MELF design
Pick and place compatibility
DescriptionFeatures
Outline drawingPinning
LOW COST SQUARE CERAMIC PACKAGE PIN DIODES
CHIP
FULL FACE BOND
CERAMIC
SOLDERABLE
SURFACES
BC
A
A
Package
SMD4
SMD6
SMD8
Symbol
A
B
C
A
B
C
A
B
C
min.
2
2.9
0.3
2.5
4.7
0.3
3.50
4.70
0.20
max
2.3
3.5
0.8
2.8
5.2
0.8
3.81
5.2
0.38
min.
.079
.114
.012
.098
.185
.012
.138
.185
.008
max
.091
.138
.031
.0110
.205
.031
.150
.205
.015
Millimeters Inches
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SILICON PIN DIODES
Low cost square ceramic pack age PIN diodes
Applicable Total Forward Minority
Electrical Package voltage capacitance series resistance carrier Power
Parameter VC
TRSF lifetime dissipation
Test conditions IR< 10 µA f = 1 MHz f = 120 MHz IF= 10 mA Contact
VR= 50 V IF= 50 mA IR= 6 mA surface (1)
TEMEX square ceramic diodes are particularly suitable for high volume tape and reel assembly.
Several values of total capacitance are available, together with a low forward series resistance. These
components are designed to meet the low distortion specification required by all the mobile radio
applications. Due to the specific design, these devices offer low loss and low thermal resistance
performance and are characterized for high power handling. The electrical properties are ideal for use
in antenna switches, filters, phase shifters, in all mobile radio applications from few MHz to GHz
frequencies.
Applications
Electrical characteristics at 25° C
VpF µs W
max typ. max typ. max min. max
SQM1050 SMD4 (2) 50 0.6 0.7 0.70 0.90 1.0 3.0
SQM1150 SMD4 200 1.0 1.2 0.25 0.35 1.0 3.0
SQM1250 SMD4 50 0.9 1.2 0.50 0.75 2.0 4.0
SQM1350 SMD4 (2) 50 1.5 1.7 0.40 0.60 3.5 4.5
SQM1450 SMD8 50 1.8 2.5 0.50 0.75 5.0 8.0
SQM2050 SMD4 50 0.6 0.7 0.7 1.00 1.0 3
SQM2150 SMD4 50 1.0 1.2 0.25 0.35 1.0 3
(1) diode brazed on infinite copper heat sink at 25° C
(2) standard package SMD4 also available in SMD6
Temperature ranges:
Operating junction (Tj) : -55° C to +150° C
Storage : -65° C to +150° C
Soldering : 230° C 5 Sec.
Type Type
τI
New!
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How to order?
DH80053 - 06 T3
Diode type Package Conditioning
information
-06: SMD4 T1: 10 0 0 pieces
-40: SMD4AM tape & reel
SMD8AM T3: 30 0 0 pieces
-20: SDM6 tape & reel
-24: SMD8 blank: bulk
SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES
Description
These PIN diodes are manufactured in a square package (SMD) for surface mount applications.
These packages utilize ceramic package technology with low inductance and axial terminations.
This design simplifies automatic pick and place indexing and assembly. The termination contacts are
tin lead plated for vapor or reflow circuit board soldering on Printed Circuit Boards.
These diodes are particularly suited for applications in frequency hopping radios, low loss,
low distortion, and filters in HF, VHF and UHF frequencies.
Packages
Packages SMD4 SMD4AM SMD6 SMD8 SMD8AM
DH50209 -06 -40
DH80050 -06 -40
DH80051 -06 -40
DH80052 -06 -40
DH80053 -06 -40
DH80054 -06 -40
DH80055 -06 -40 -20
DH80082 -06 -40 -20
DH80100 -06 -40 -20
DH80102 -20 -24 -44
DH80106 -24 -44
Other specifications available on request.
12-13
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SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
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Electrical characteristics
Low voltage PIN diodes
Breakdown Total Forward Minority
Vbr capacitance series resistance carrier
(V) Ct (pF) Rsf () t l (µs)
Test Ir = 10 µA Vr = 50 V If = 50 mA If = 10 mA
conditions f = 1 MHz f = 120 MHz Ir = 6 mA
Type min. typ. max. max. min.
DH50209 200 1.00 1.20 0.25 2.00
Medium voltage PIN diodes
Applicable Breakdown Total capacitance Forward series Minority Max. power
voltage V Vbr Ct resistance Rsf carrier dissipation
(V) (V) (pF) ()τl (µs) 25° C
Test I < 10 µA Ir = 10 µA Vr = 50 V I= 100mA I= 200 mA If= 10mA Contact Free
conditions f = 1MHz f= 120MHz f= 120 MHz Ir= 6mA surface air
Type max. typ. typ. max. max. min. W (1) W (2)
DH80050 500 550 0.40 0.45 0.70 0.65 1.1 3.0 1.2
DH80051 500 550 0.55 0.65 0.60 0.55 1.5 3.5 1.2
DH80052 500 550 0.85 1.05 0.40 0.35 2.0 4.0 1.2
DH80053 500 550 1.05 1.20 0.35 0.30 2.5 4.0 1.5
DH80054 500 550 1.25 1.35 0.30 0.27 3.0 4.5 1.5
DH80055 500 550 1.45 1.55 0.28 0.25 3.5 4.5 1.5
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
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SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
Medium voltage PIN diodes
Applicable Breakdown Total capacitance Forward series Minority Max. power
voltage V Vbr Ct resistance Rsf carrier dissipation
(V) (V) (pF) ()τl (µs) 25° C
Test I < 10 µA Ir = 10 µA Vr = 50 V I=100mA I=200 mA If=10mA Contact Free
conditions f = 1MHz f=120MHz f=120 MHz Ir=6mA surface air
Type max. typ. typ. max. max. min. W (1) W (2)
DH80082 800 850 0.90 1.00 0.40 0.35 3.00 TBD TBD
DH80100 1000 1100 0.55 0.65 0.70 0.60 3.00 TBD TBD
DH80102 1000 1100 0.85 1.00 0.50 0.35 4.00 TBD TBD
DH80106 1000 1100 1.25 2.00 0.35 0.30 7.00 TBD TBD
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
Temperature ranges
Operating junction (Tj) : -55° C to +150° C
Storage : -65° C to +150° C
Series Resistance vs. Forward Current
0.1 10 100 1000I (mA)
1
10
100 RSF ()
0
DH80052
DH80050
0.1 10 100 1000
I (mA)0
1
10
100 RSF ()
DH80053
DH80051
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SILICON PIN DIODES
Non magnetic square ceramic package 500 volts PIN diodes
TEMEX is manufacturing a non magnetic
square PIN diode for surface mount appli-
cations. The properties of non magnetism
prevent interference in the magnetic field of the
imaging system. The c hip inside is passivated to
ensure high reliability and very low leakage.
These diodes ensure high power switching at
frequencies from 1 MHz to several GHz. This
package utilizes ceramic package technology
with low inductance and axial terminations. The
design simplifies automatic pick and place
indexing and assembly. The termination
contacts are tin plated for vapor or reflow circuit
board soldering. The active area is a PIN high
power glass passivated chip which can be
designed to customer specifications.
NON MAGNETIC SQUARE CERAMIC PACKAGE
50 0 VOLTS PIN DIODES
Non magnetic package
Low loss, low distortion
Low inductance
High reliability
Hermetically sealed package
Glass passivated PIN diode chip
Non rolling MELF design
Pick and place compatibility
Pinning Outline drawing
DescriptionFeatures
CHIP
FULL FACE BOND
CERAMIC
SOLDERABLE
SURFACES
(.126 )
+.012
-.012
3.20+0.3
-0.3
0.635 max
(.025 max)
(.080 )
+.012
-0
2.00+0.3
-0
(.080 )
+.012
-0
2.00+0.3
-0
Characteristics Applicable Breakdown Total Forward series Minority Power
at 25° C voltage voltage capacitance resistance carrier dissipation
lifetime
VV
BR CTRSF τI
12-16
Vol. 1
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SILICON PIN DIODES
Non magnetic square ceramic package 500 volts PIN diodes
TEMEX non magnetic SQP diodes are
particularly suitable for Magnetic Resonance
Imaging applications. The maximum operating
breakdown voltage is 550 V. Several values of
total capacitance are available (beginning at
0.40 pF), together with a low forward series
resistance.
These devices are characterized for high power
handling, low loss and low distortion (long
carrier lifetime design). The electrical properties
are ideal for use in RF coils which must produce
a homogeneous electromagnetic field in the
MRI system for frequencies from a few MHz to
over 100 MHz.
Maximum ratings
OPERATING
JUNCTION
- 55° C
+ 150° C
- 65° C
+ 150° C
230° C 5 sec.
STORAGE SOLDERING
DH80050-40 500 550 0.40 0.45 0.70 0.65 1.1 3.0
DH80051-40 500 550 0.55 0.65 0.60 0.55 1.5 3.5
DH80052-40 500 550 0.85 1.05 0.40 0.35 2.0 4.0
DH80 053-40 50 0 550 1.05 1.20 0.35 0.30 2.5 4.0
DH80 054-40 50 0 550 1.25 1.35 0.30 0.27 3.0 4.5
DH80055-40 500 550 1.45 1.55 0.25 0.22 3.5 4.5
Applications
Electrical characteristics
STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS
PACKAGED DIODES
max typ. typ. max IF=100mA IF=200mA min. max
TYPE V V pF max µs W
Test IR< 10 µA Ir< 10 µA f = 1 MHz f = 120 MHz IF= 10 mA Contact
conditions VR= 50 V IFas below IR= 6 mA surface (1)
(1) diode brazed on infinite copper heat sink
12-17
Vol. 1
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SILICON PIN DIODES
High voltage PIN diodes
These devices are most often used to control
Radio Frequency (RF) and microwave signals.
Typically, high-voltage PIN diodes are found in
high power switches and phase shifters.
TEMEX high-voltage PIN diode products are
designed for very high reliability, high power
handling capabilities, high isolation, and low
signal distortion, especially in the HF and VHF
bands. High-power multithrow switch modules
are available for frequencies in the 1 MHz to
1 GHz range.
All high-voltage PIN diode products can be
configured on chips or in various packages: e.g.
series, shunt, flat mount, stud mount, surface
mount (SMD) and (on request) non-magnetic.
HIGH VOLTAGE PIN DIODES
The controlling element of a PIN diode is its
Intrinsic (l) layer. The diode itself is a sandwich,
i.e. a high resistivity l layer between highly
doped layers of P and N materials. With
negative bias on the l layer, the PIN diode
exhibits very high parallel resistance, e.g. acting
as a switch in the OFF position. A positive bias
causes the diode to conduct, with very low
series resistance. Certain applications impose
specific objectives on diode construction (e.g.
in the HF and VHF band, low signal distortion
can be achieved with high Minority Carrier
Lifetime τl).
Applications Characteristics
SILICON PIN DIODES
High voltage PIN diodes
12-18
Vol. 1
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Electrical characteristics
This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa
technology. A broad range of products is available, in terms of breakdown voltages, junction
capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-magnetic packages.
SILICON PIN DIODES FOR SWITCHING & PHASE
SHIFTING APPLICATIONS (MEDIUM & HIGH POWER)
PIN Gold dia per side min. typ. typ. max IF= 100 mA IF= 200 mA min.
EH80050 0.13 0.6 500 550 0.15 0.20 0.70 0.65 1.1
EH80051 0.15 0.6 500 550 0.30 0.40 0.60 0.55 1.5
EH80052 0.25 0.8 500 550 0.60 0.70 0.40 0.30 2.0
EH80053 0.27 0.8 500 550 0.80 0.90 0.30 0.25 2.5
EH80055 0.34 0.9 500 550 1.2 1.3 0.25 0.22 3.0
EH80080 0.13 0.8 800 850 0.15 0.35 0.80 0.70 2.0
EH80083 0.27 0.9 800 850 0.80 0.90 0.40 0.30 3.0
EH80086 0.55 1.4 800 850 1.4 1.7 0.35 0.28 5.0
EH80100 0.23 0.9 1000 1100 0.30 0.40 0.70 0.60 3.0
EH80102 0.30 0.9 1000 1100 0.60 0.75 0.40 0.35 4.0
EH80106 0.55 1.4 1000 1100 1.40 1.70 0.35 0.30 7.0
VR= 100V IF= 200 mA IF= 300 mA
EH80120 0.25 0.9 1200 1300 0.30 0.40 0.60 0.55 6.0
EH80124 0.65 1.5 H (2) 1200 1300 1.00 1.20 0.45 0.35 10.0
EH80126 0.75 1.7 H (2) 1200 1300 1.40 1.70 0.40 0.30 12.0
EH80129 1.25 2.2 1200 1300 2.00 2.30 0.30 0.25 15.0
EH80154 0.65 1.5 1500 1600 1.00 1.20 0.45 0.35 10.0
EH80159 1.25 2.2 1500 1600 2.00 2.30 0.30 0.25 15.0
VR= 200V I F= 200 mA IF= 300 mA
EH80182 0.75 1.5 1800 1900 0.60 0.80 0.60 0.50 12.0
EH80189 1.4 2.6 H (2) 1800 1900 2.00 2.40 0.35 0.30 18.0
EH80204 0.85 1.7 2000 2100 1.00 1.30 0.50 0.40 14.0
EH80209 1.4 2.6 H (2) 2000 2100 2.00 2.40 0.35 0.30 18.0
EH80210 1.5 3 H (2) 2000 2100 3.00 3.40 0.20 0.15 25.0
Description
(1) Other capacitance values available on request
(2) Hexagonal chips (between opposite flats)
Characteristics Chip Applicable Break- Junction Forward series Minority
at 25°C dimensions voltage down capacitance resistance carrier
VRVBR Cj(1) RSF lifetime
τI
Test conditions N/A I<10µA I<10µA VR= 50 V f=120 MHz IF=10mA
f = 1 MHz IFAS SHOWN IR=6mA
TYPE mm typ. V V pF MAX µS
CHIP AND PACKAGED DIODES
CHIP DIODES
12-19
Vol. 1
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SILICON PIN DIODES
High voltage PIN diodes
PIN Shunt Isolated stud Flat mounted max MHz W
DH80050 F 27d BH301 BH202 20.0 50 - 20000 50
DH80051 F 27d BH301 BH202 18.0 30 - 15000 80
DH80052 F 27d BH301 BH202 15.0 20 - 10000 100
DH80053 F 27d BH301 BH202 12.0 20 - 3000 100
DH80055 F 27d BH301 BH202 10.0 10 - 1000 250
DH80080 F 27d BH301 BH202 18.0 50 - 20000 60
DH80083 F 27d BH301 BH202 12.0 20 - 10000 80
DH80086 BH35 BH301 BH202 8.0 10 - 500 200
DH80100 F 27d BH301 BH202 15.0 20 - 10000 80
DH80102 F 27d BH301 BH202 12.0 20 - 3000 100
DH80106 BH35 BH300 BH202 5.5 10 - 500 500
DH80120 F 27d BH301 BH202 15.0 10 - 8000 100
DH80124 BH35 BH300 BH200 8.0 10 - 2000 250
DH80126 BH35 BH300 BH200 6.0 10 - 500 500
DH80129 BH141 BH300 BH200 4.5 5 - 200 1000
DH80154 BH141 BH300 BH200 8.0 10 - 2000 250
DH80159 BH141 BH300 BH200 4.5 5 - 200 1000
DH80182 BH35 BH300 BH200 10 10 - 50
DH80189 BH141 BH300 BH200 4.5 15 - 200 1000
DH80204 BH141 BH300 BH200 8.0 10 - 1000 250
DH80209 BH141 BH300 BH200 4.5 1.5 - 200 1000
DH80210 BH141 BH300 BH200 2.5 1.5 - 50 1000
(3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink
Temperature ranges:
Operating junction (Tj): -55° C to +175° C Storage: -65° C to +20 C
°C/W Frequency Power
Thermal Typical operating
resistance conditions
RTH (4)
VSWR < 1.5
PDISS = 1 W Z0= 50
Chip configuration
Type Standard case (3)
PACKAGED DIODES
12-20
Vol. 1
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SILICON PIN DIODES
High voltage PIN diodes
This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family,
to achieve very low loss and distortion.
Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.
TWO & THREE PORT RF PIN SWITCH MODULES
(1) (2) typ. max min. max typ. typ.
200 MHz 100 MHz
100 mA 0 V
SH90101 TO39 SP2T 10 - 60 0 0.35 35 10 10 0 50
SH91101 TO39 SP2T 10 - 60 0 0.35 35 10 10 0 50
400 MHz 200 MHz
100 mA 0 V
SH90103 BH203 SP2T 20 - 10 0 0 0.35 25 10 0 20 0 150
SH91103 BH203 SP2T 20 - 1000 0.35 25 10 0 20 0 150
SH92103 BH204 SP3T 20 - 10 0 0 0.35 25 10 0 20 0 150
SH93103 BH204 SP3T 20 - 10 0 0 0.35 25 10 0 20 0 150
100 MHz 20 0 MHz
200 mA 100 V
SH91107 BH403a SP2T 20 - 500 0.20 33 10 0 0 400 60 0
10 MHz 10 MHz
200 mA 20 0 V
SH90207 BH405 SP2T 1.5 - 50 0.15 37 10 00 1000 700
SH91207 BH405 SP2T 1.5 - 50 0.15 37 10 0 0 1000 700
Electrical characteristics
Description
(1) Series 90 and 92 : common anode (2) Custom configurations available on request
Series 91 and 93 : common cathode
Test conditions N/A f (MHz) f (MHz) CW Forward Reverse
If(mA) Vr(V)
Characteristics Frequency Loss Isolation Input power Suggested bias
at 25°C range conditions
LI P
in
Type Case Switch MHz dB dB W mA V
Type
Temperature ranges:
Operating junction (Tj) : - 55° C to + 150° C
Storage : - 65° C to + 175° C