MITSUBISHI SEMICONDUCTOR (TRIAC) BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5AM TYPE VOLT, CLASS 12.5 MIN @ 20mA (10mA) * 2.5 OUTLINE DRAWING 10.5 MAX 2.5 [er=|_ [s @MO@O x Measurement point of case temperature @ T1 TERMINAL scone veneevesaevesennssnnsseenas 5A va @ Te TERMINAL 400V/600V @ @ GATE TERMINAL @ Tz TERMINAL TO-220 Dimensions 4.5 cain 0.5 inmm 2.6 APPLICATION Switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as TV sets - stereo - refrigerator - washing machine - infrared kotatsu - carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol Parameter Voltage class Unit 8 12 VDRM Repetitive peak off-state voltage *! 400 600 Vv VDsM Non-repetitive peak off-state voltage *! 500 720 Vv Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360 conduction, Te=103C 5 A Irsm Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 50 A 2 21 for fusing Valle porresponding to 1 cycle of half wave 60Hz, surge on-state 10.4 Res Pam Peak gate power dissipation 3 Ww PG (AV) Average gate power dissipation 0.3 Ww Vem Peak gate voltage 10 Vv lem Peak gate current 2 A Tj Junction temperature 40 ~ +125 C Tsig Storage temperature 40 ~ +125 C _ Weight Typical value 2.0 9g *%*1, Gate open. Feb.1999 MITSUBISHI ELECTRICMITSUBISHI SEMICONDUCTOR (TRIAC) BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125C, VDRM applied _ _ 2.0 mA VIM On-state voltage Te=25C, ITM=7A, Instantaneous measurement _ _ 1.8 Vv VFGT I I _ _ 15 Vv VRGT I Gate trigger voltage *2 I | Tj=25C, Vo=6V, RL=6Q, Ra=3300. - - 15 V VRGT I 0 _ _ 15 Vv IFGT I I = - 20*5|) mA IRGT I Gate trigger current *2 I | Tj=25C, Vo=6V, RL=6Q, RG=3300 _ _ 20*5 mA IRGT I = - 20*5|) mA Vep Gate non-trigger voltage Tj=125C, Vb=1/2VDRM 0.2 _ _ Vv Rth (-c) Thermal resistance Junction to case *4 _ _ 3.0 C/W (Hae Sete vomage | | | vs *2, Measurement using the gate trigger characteristics measurement circuit. *3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. *4. The contact thermal resistance Rih (c-f) in case of greasing is 1.0C/W. +5, High sensitivity (lat<10mA) is also available. (let item @) Voltage VDRM (dv/dt) tT dit Commutating voltage and current waveforms class (Vv) Symbol Min. Unit est conditions (inductive load) R SUPPLY 8 400 1. Junction temperature VOLTAGE TIME Tj=125C L 5 2. Rate of decay of on-state commutat- MAIN CURRENT (di/dt)c Vius ing current TIME R _ (di/dt)-2.5A/ms MAIN LL 12 600 3. Peak off-state voltage VOLTAGE TIME L 5 Vp=400V (dvdt)c Vb PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 100 7 ~~ 5 <= 90 ~ 3 5 80 E tf Z 1! Tj = 125C oc 0 uu a) co v 5 60 oc 5 2 E 50 5 3 i uu 2 E fe o 40 40 z m 7 5 30 Zz 5 Lu 20 2 2 2 10 10-1 Q 0.6 1.0 1.41.8 2.2 2.6 3.0343.84246 10 ON-STATE VOLTAGE (V) 2 345 7101 RATED SURGE ON-STATE CURRENT 2 3 45 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MITSUBISHI ELECTRIC Feb.1999MITSUBISHI SEMICONDUCTOR (TRIAC) BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE tC) GATE TRIGGER VOLTAGE (Tj GATE TRIGGER CURRENT VS. GATE CHARACTERISTICS JUNCTION TEMPERATURE 108 TYPICAL EXAMPLE X 100 (%} IRGT Ill IRGT | ~ ec 25C) me who nN De} =1.5V 10 Tj=25C GATE VOLTAGE (V) wo [-Tier = 20mA GATE TRIGGER CURRENT (Tj GATE TRIGGER CURRENT (Tj my wo ACN 10" Ven = 0.2V 101 101 23 57102 23 57108 23 57104 -6040-20 0 20 40 60 80 100120140 GATE CURRENT (mA) JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE TRIGGER VOLTAGE VS. (JUNCTION TO CASE) JUNCTION TEMPERATURE 4 F 0223 5710323 5 % 100%) 103 = TYPICAL EXAMPLE = 7 F 36 5 eo 4 Ho 32 S 3 z 28 a a , i 2 oa e = . 102 = 20 - s a 7 in 1.6 S 5 = co 4 F 1.2 gS 3 2 og or 2 a nu 2 0.4 LW = 101 = 0 60-40-20 0 20 40 60 80 100120140 10" 23 57109 23 57101 23 57102 JUNCTION TEMPERATURE (C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER ALLOWABLE CASE TEMPERATURE DISSIPATION VS. RMS ON-STATE CURRENT = 160 = CURVES APPLY REGARDLESS > _ 140] OF CONDUCTION ANGLE Q m 360 _ 2 oa CONDUCTION oe - 4 RESISTIVE, = 100 a INDUCTIVE < ie LOADS ui 80 = = 60 2 E 360 Wi & 40;}CONDUCTION < 5 RESISTIVE, 20) INDUCTIVE 5 LOADS o 1 2 3 4 5 6 7 8 0 12 3 4 5 6 7 8 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI ELECTRICMITSUBISHI SEMICONDUCTOR (TRIAC) BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 160 ALL FINS ARE BLACK PAINTED NATURAL CONVECTION G 149 L-4{ ALUMINUM AND GREASED GS 149 --4NO FINS a 120x120x12.3 a CURVES APPLY REGARDLESS Ww 120 SS ++ W120 OF CONDUCTION ANGLE > NS 100x 100xt2.3 5 RESISTIVE, INDUCTIVE LOADS f 100 i+"t f 100/) cc K-00 60x12.3 cc N\ a 80 ~ ao 80 = |S = - 60 - 60 5 NATURAL 5 N fi 40 ;/CONVECTION we 40 N g CURVES APPLY RESISTIVE, @ N =< 20;/REGARDLESS OF T INDUCTIVE =z 20 CONDUCTION ANGLE] LOADS 0 \ 0 1 2 3 4 5 6 7 8 0 04 08 1.2 16 2.0 24 28 32 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) _ REPETITIVE PEAK OFF-STATE & CURRENT VS. JUNCTION HOLDING CURRENT VS. s TEMPERATURE JUNCTION TEMPERATURE x 105 102 <7 P TYPICAL EXAMPLE 7 Vp = 12V <\$ 5 I S w/e 3 e 2? DISTRIBUTION ej= 2 E | Ele 3 TYPICAL z|z 4 Kk aig 10 Zz 2 EXAMPLE cele Z Wu 3B\3 5 fe wo} uu 3 5 10) ele =t} = 2 o 7 | g wi 193 Z 5 oO 7 5 4 |x 5 3 = ap 3 = 2 Loy uu 2 =|= =i Gli 10? 100 a8, 60-40-20 0 20 40 60 80 100120140 60-40-20 0 20 40 60 80 100120140 cyc JUNCTION TEMPERATURE (C) JUNCTION TEMPERATURE (C) LACHING CURRENT VS. BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE 108 160 7 Tt, Gt TYPICAL & TYPICAL EXAMPLE , Ts, GJ EXAMPLE 8 140 a? EE = 2; DISTRIBUTION Tt, @ x 120 E 102 TYPICAL al? a 7 EXAMPLE e1& 100 z 8 Ale 5 2 c)<t Oo Fie Z 101 ale =| > 5 g mio 840 s >|> 3 LIS 20 7 S| eyo 10 co] co 0 60-40-20 0 20 40 60 80 100120140 ~60-40-20 0 20 40 60 80 100120140 JUNCTION TEMPERATURE (C) JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI ELECTRICMITSUBISHI SEMICONDUCTOR (TRIAC) BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BREAKOVER VOLTAGE VS. RATE OF RISE OF = OFF-STATE VOLTAGE u COMMUTATION CHARACTERISTICS s 160 102 s TYPICAL EXAMPLE < = 7) TYPICAL VOLTAGE WAVEFORM x 140 Tj = 125C oS |EXAMPLE t als Le 4lTi=125C (dvidt)c\,_ Vo} S|= 120 Ow gfIT=4A CURRENT WAVEFORM ala Se p|t = 500ps In difdt)c ~|. 100 ok Vb = 200V if z/= QO f=3Hz ht Zle 80 c> 101 | Ble 4 | \| L|QUADRANT of 7 ss |= Wwe _ ala Ill QUADRANT ES 2 > RI] | QUADRANT =|= 40 2 = 3}MINIMUM + | | || | S|> Zs >|CHARAG- | 4 Ill QUADRANT gig 20 LO TERIsTics | | <x) EO ele oO x 1190 WALUE : 65] o5 101 23 57102 23 57103 23 57104 o 10 2345 710' 2 345 7102 RATE OF RISE OF OFF-STATE VOLTAGE (V/us) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE TRIGGER CHARACTERISTICS TEST CIRCUITS GATE CURRENT PULSE WIDTH 6O 6Q TYPICAL EXAMPLE VA 6V A 6V (A) RG (V) Ra TEST PROCEDURE I. TEST PROCEDURE I + % 100 (%) 3 ao yw fon = Qo nm GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC Ny woA NA 10 23457101 2 345 7102 GATE CURRENT PULSE WIDTH (ps) TEST PROCEDURE II Feb.1999 MITSUBISHI ELECTRIC