2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICEV ICEV ICEO IEBO BVCEO BVCEO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hfe fT Cob Cob SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 2N6057 60 60 CHARACTERISTICS: (TC=25C unless otherwise noted) TEST CONDITIONS MIN VCE=Rated VCEO, VEB=1.5V VCE=Rated VCEO, VEB=1.5V, TC=150C VCE=1/2Rated VCEO VEB=5.0V IC=100mA, (2N6050, 2N6057) 60 IC=100mA, (2N6051, 2N6058) 80 IC=100mA, (2N6052, 2N6059) 100 IC=6.0A, IB=24mA IC=12A, IB=120mA IC=12A, IB=120mA VCE=3.0V, IC=6.0A VCE=3.0V, IC=6.0A 750 VCE=3.0V, IC=12A 100 VCE=3.0V, IC=5.0A, f=1.0kHz 300 VCE=3.0V, IC=5.0A, f=1.0MHz 4.0 VCB=10V, IE=0, f=100kHz (PNP types) VCB=10V, IE=0, f=100kHz (NPN types) 2N6051 2N6058 80 80 5.0 12 20 0.2 150 -65 to +200 1.17 MAX 0.5 5.0 1.0 2.0 2.0 3.0 4.0 2.8 18K 500 300 2N6052 2N6059 100 100 UNITS V V V A A A W C C/W UNITS mA mA mA mA V V V V V V V MHz pF pF R1 (18-September 2012) 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (18-September 2012) w w w. c e n t r a l s e m i . c o m