SMD Super Fast Recovery Rectifiers CSFB201-G Thru. CSFB205-G Reverse Voltage: 50 to 600 Volts Forward Current: 2.0 Amp RoHS Device DO-214AA (SMB) Features -Ideal for surface mount applications. -Easy pick and place. 0.185(4.70) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) -Super fast recovery time 35nS. -Built-in strain relief. -Low forward voltage drop. 0.220(5.59) 0.200(5.08) Mechanical data 0.012(0.31) 0.006(0.15) 0.096(2.44) 0.083(2.13) -Case: JEDEC DO-214AA, molded plastic. 0.050(1.27) 0.030(0.76) -Terminals: solderable per MIL-STD-750, method 2026. 0.008(0.20) 0.004(0.10) -Polarity: Color band denotes cathode end. Dimensions in inches and (millimeter) -Approx. weight: 0.093 grams Maximum Ratings and Electrical Characteristics Parameter Symbol CSFB201-G CSFB202-G CSFB203-G CSFB204-G CSFB205-G Units Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 V Max. DC blocking voltage VDC 50 100 200 400 600 V Max. RMS voltage VRMS 35 70 140 280 420 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 50 A IO 2.0 A Max. average forward current Max. instantaneous forward 2.0A voltage at Reverse recovery time Max. DC reverse current at TA=25 rated DC blocking voltage TA=125 Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature O C C O VF 0.92 1.25 V 1.3 Trr 35 nS IR 5.0 350 A RJL 20 TJ 150 O C TSTG -55 to +150 O C O C/W Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0x8.0 mm copper2 pad area. REV:A Page 1 QW-BS002 Comchip Technology CO., LTD. SMD Super Fast Recovery Rectifiers RATING AND CHARACTERISTIC CURVES (CSFB201-G thru CSFB205-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 1000 100 CSFB201-G~203-G TJ=125 OC 10 F o r w a rd C u rren t(A) Rever s e C urr e n t (A ) 100 10 O TJ=75 C O TJ=25 C 1 CSFB204-G 1 CSFB205-G 0.1 O TJ=25 C Pulse width 300S 4% duty cycle 0.1 0.01 0 20 40 60 80 100 120 0.4 140 0.8 1.0 1.4 1.2 1.6 1.8 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig.3 Junction Capacitance Fig.4 Non-repetitive Forward Surge Current 50 Peak F or ward Surge C ur re nt A ( ) 60 40 J u n c ti o n C apacian t ce(p F ) 0.6 30 20 10 O TJ=25 C f=1MHz Vsig=50mVp-p TJ=25 OC 8.3ms single half sine wave, JEDEC method 50 40 30 20 10 0 0 0.1 1 10 100 1000 1 10 100 Number of Cycles at 60Hz Reverse Voltage (V) Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 2.8 trr 10 NONINDUCTIVE Average Forward Current (A) 50 NONINDUCTIVE +0.5A (+) 25Vdc (approx.) (-) (-) D.U.T. 1 NONINDUCTIVE PULSE GENERATOR (NOTE 2) 0 -0.25A (+) OSCILLLISCOPE (NOTE 1) NOTES: 1. Rise time=7ns max., input impedance=1 M, 22pF. 2. Rise time=10ns max., input impedance=50. -1.0A 2.4 2.0 1.6 1.2 Single phase Half wave 60Hz 0.8 0.4 0 0 1cm Set time base for 50 / 10nS / cm 25 50 75 100 125 Ambient Temperature ( 150 O 175 C) REV:A Page 2 QW-BS002 Comchip Technology CO., LTD. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Comchip Technology: CSFB201-G CSFB202-G CSFB203-G CSFB204-G